Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2005
12/01/2005US20050263772 Thin film display transistor array substrate for a liquid crystal display having repair lines
12/01/2005US20050263770 Semiconductor device
12/01/2005US20050263769 Liquid crystal display device and fabricating method thereof
12/01/2005US20050263768 Liquid crystal display device and fabricating method thereof
12/01/2005US20050263767 Semiconductor device and method for manufacturing the same
12/01/2005US20050263766 Pixel of a thin film transistor array substrate and method for making the same
12/01/2005US20050263763 Methods of forming devices, constructions and systems comprising thyristors
12/01/2005US20050263762 Amorphous silicon thin film transistor-liquid crystal display device and method of manufacturing the same
12/01/2005US20050263761 Thin film transistor, flat panel display having the same and a method of fabricating each
12/01/2005US20050263760 Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure
12/01/2005US20050263755 Organic light emitting display and method of fabricating the same
12/01/2005US20050263754 Substrates for growth of chemical compound semiconductors, chemical compound semiconductors using the substrates and processes for producing thereof
12/01/2005US20050263751 Non-magnetic semiconductor spin transistor
12/01/2005US20050263681 Active pixel having buried transistor
12/01/2005US20050263517 Apparatus relating to the reconstruction of semiconductor wafers for wafer-level processing
12/01/2005US20050263486 Forming of oblique trenches
12/01/2005US20050262676 Tactile sensor and method of manufacturing the same
12/01/2005DE19860829B4 Verfahren zur Herstellung eines Halbleiterbausteins A process for producing a semiconductor device
12/01/2005DE10340131B4 Halbleiterleistungsbauteil mit Ladungskompensationsstruktur und monolithisch integrierter Schaltung, sowie Verfahren zu dessen Herstellung The semiconductor power component having charge compensation structure and a monolithically integrated circuit, and to processes for the preparation thereof
12/01/2005DE102005018344A1 Schaltvorrichtung für rekonfigurierbare Zwischenverbindung und Verfahren zum Herstellen derselben Switching device for reconfigurable interconnect and method of making same
12/01/2005DE102005018319A1 Nitridhalbleitervorrichtung und deren Herstellungsverfahren Nitride semiconductor and their method of preparation
12/01/2005DE102005018318A1 Nitridhalbleitervorrichtung und deren Herstellungsverfahren Nitride semiconductor and their method of preparation
12/01/2005DE102005013264A1 Festkörperelement und Festkörpervorrichtung Solid element and solid state device
12/01/2005DE102005009976A1 Transistor mit Dotierstoff tragendem Metall im Source- und Drainbereich Transistor with dopant wearing metal in the source and drain regions
12/01/2005DE102004063691A1 Semiconductor device ion implanting method, involves nonuniformly implanting dose of implanted ions in central portion and edge portions of semiconductor substrate with different scanning speed in different directions
12/01/2005DE102004063404A1 Fabrication of nonvolatile memory by sequentially forming first and second insulation layers on substrate, forming hard mask, depositing silicon, forming quantum dots, removing hard mask, forming third insulation layer, and forming gate
12/01/2005DE102004034397A1 Bildsensormodul und Verfahren zum Herstellen eines Waferebenenpakets Image sensor module and method of manufacturing a wafer-level package
12/01/2005DE102004023063A1 Mikromechanische piezoresistive Drucksensorenvorrichtung Micromechanical piezoresistive pressure sensors device
12/01/2005DE102004022724A1 Semiconductor element has cooling surface to couple with cooling body on a carrier pressed into a waveform
12/01/2005DE102004021393A1 Feldeffekt-Leistungstransistor Field effect power transistor
12/01/2005DE102004001713B4 Herstellung von EPROM-Zellen in BiCMOS-Technologie Manufacture of EPROM cells in BiCMOS technology
12/01/2005CA2567550A1 Liquid logic structures for electronic device applications
12/01/2005CA2566756A1 Wide bandgap hemts with source connected field plates
12/01/2005CA2566361A1 Wide bandgap transistors with multiple field plates
12/01/2005CA2564955A1 Wide bandgap field effect transistors with source connected field plates
11/2005
11/30/2005EP1601020A1 Semiconductor device
11/30/2005EP1601019A2 Light emitting diode chip with integrated diode for electrostatic discharge protection
11/30/2005EP1601012A2 Microelectronic assembly having variable thickness solder joint
11/30/2005EP1601010A2 Formation of oblique trenches
11/30/2005EP1600530A1 (001)-orientated perovskite film formation method and device having perovskite film
11/30/2005EP1599908A2 Method of manufacturing a non-volatile memory cell with a lateral select gate
11/30/2005EP1599907A2 Trench power mosfet with planarized gate bus
11/30/2005EP1599904A1 Lateral lubistor structure and method
11/30/2005EP1599902A2 Flip-chip component packaging process and flip-chip component
11/30/2005EP1599900A2 Non volatile memory cell
11/30/2005EP1599899A2 Atomic layer deposited dielectric layers
11/30/2005EP1599857A2 Electronic device with electrostatic discharge protection circuitry
11/30/2005EP1599785A2 Replicated derivatives having demand-based, adjustable returns, and trading exchange therefor
11/30/2005CN2743980Y Semiconductor assembly with high dielectric constant grid dielectric layer
11/30/2005CN2743979Y Grid structure and MOS structure containing grid structure
11/30/2005CN2743978Y Transverse high-voltage N type metal oxide semiconductor transistor with multi-potential field polar plate
11/30/2005CN1703787A Organic thin film zener diodes
11/30/2005CN1703772A Transparent oxide semiconductor thin film transistors
11/30/2005CN1702965A Semiconductor device
11/30/2005CN1702879A Thin film transistor substrate and fabrication method thereof
11/30/2005CN1702878A Semiconductor device and method of fabricating the same
11/30/2005CN1702877A Thin-film transistor, method of manufacturing thin-film transistor, electronic circuit, display device, and electronic equipment
11/30/2005CN1702876A Semiconductor device and manufacturing method thereof
11/30/2005CN1702875A Transistor and method for manufacturing the same
11/30/2005CN1702874A Semiconductor apparatus
11/30/2005CN1702870A Memory device and method of manufacturing the same
11/30/2005CN1702868A Multi-gate dram with deep-trench capacitor and fabrication thereof
11/30/2005CN1702866A Semiconductor device
11/30/2005CN1702864A Inspection substrate for display device
11/30/2005CN1702853A Semiconductor device and manufacturing method of the same
11/30/2005CN1702852A Method of manufacturing memory device comprising gate having uniformly distributed silicon nano dots
11/30/2005CN1702851A Method for manufacturing microelectronic circuit component and integrated circuit component
11/30/2005CN1702845A Methods of forming field effect transistors having recessed channel regions
11/30/2005CN1702844A Method for forming semiconductor by strained-Si and semiconductor device thereof
11/30/2005CN1702843A Phosphorous doping methods of manufacturing field effect transistors having multiple stacked channels
11/30/2005CN1702837A Method for forming pattern, thin film transistor, display device, method for manufacturing thereof, and television apparatus
11/30/2005CN1702802A Carbon nanotube, electron emission source, electron emission device, and method of manufacturing the electron emission device
11/30/2005CN1702772A SRAM core cell for light-emitting display
11/30/2005CN1702533A Substrate for display device, manufacturing method for same and display device
11/30/2005CN1702532A Thin film transistor, flat panel display having the same and a method of fabricating each
11/30/2005CN1702531A Liquid crystal display device and fabricating method thereof
11/30/2005CN1702530A Liquid crystal display device and fabricating method thereof
11/30/2005CN1702529A Liquid crystal display panel and manufacturing method thereof
11/30/2005CN1702466A Record medium and derivation program recording equivalent circuit model of electricity storage element
11/30/2005CN1229873C Easy shrinkable novel non-volatile semiconductor memory cell utilizing split dielectric floating gate and method for making same
11/30/2005CN1229859C Evaluating method for semiconductor crystal chip
11/30/2005CN1229811C Single transistor cell of EEPROM application
11/30/2005CN1229765C Display device with multiple transistors inside with different characteristics
11/30/2005CN1229682C Electrooptical device and electronic equipment
11/30/2005CN1229681C Liquid crystal display and peripheric circuit structure and manufacturing method thereof
11/30/2005CN1229638C Nanostructure-based high energy capacity material
11/30/2005CN1229279C Array structure of nm-class carbon tubes and its preparing process
11/29/2005US6970491 Planar and wafer level packaging of semiconductor lasers and photo detectors for transmitter optical sub-assemblies
11/29/2005US6970385 Non-volatile semiconductor memory device suppressing write-back fault
11/29/2005US6970373 Method and apparatus for improving stability of a 6T CMOS SRAM cell
11/29/2005US6970221 Liquid crystal display device and method of fabricating the same
11/29/2005US6970209 Thin film transistor array substrate for a liquid crystal display and method for fabricating the same
11/29/2005US6970197 CCD imaging device and driving method thereof
11/29/2005US6970064 Center-tap transformers in integrated circuits
11/29/2005US6969913 Semiconductor device and manufacturing method for the same
11/29/2005US6969911 dielectric tolerance of the wiring is improved by preventing diffusion of the wiring material; first insulating film containing grooves, plural wiring films formed protrusively, plural barrier films, first cap films, and a second cap film
11/29/2005US6969909 Flip chip FET device
11/29/2005US6969903 High tolerance TCR balanced high current resistor for RF CMOS and RF SiGe BiCMOS applications and cadenced based hierarchical parameterized cell design kit with tunable TCR and ESD resistor ballasting feature
11/29/2005US6969901 Method and structure for a low voltage CMOS integrated circuit incorporating higher-voltage devices
11/29/2005US6969895 MRAM cell with flat topography and controlled bit line to free layer distance and method of manufacture