Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2006
03/16/2006US20060054888 Semiconductor device and method for manufacturing semiconductor device
03/16/2006US20060054887 Encapsulated organic luminescent display panel and method for manufacturing the same
03/16/2006US20060054886 Methods and devices utilizing soluble conjugated polymers
03/16/2006US20060054884 Organic semiconductor material, organic semiconductor structure, and organic semiconductor device
03/16/2006US20060054883 Organic semiconductor device
03/16/2006US20060054881 SERS-active structures including nanowires
03/16/2006US20060054880 High performance hyperspectral detectors using photon controlling cavities
03/16/2006US20060054879 Article comprising gated field emission structures with centralized nanowires and method for making the same
03/16/2006US20060054878 Vertical elevated pore phase change memory
03/16/2006US20060054707 Non-contact id card and the like and method for manufacturing same
03/16/2006US20060053890 Capacitance type acceleration sensor
03/16/2006DE19709204B9 LCD-Vorrichtung und Herstellungsverfahren dafür LCD device and manufacturing method thereof
03/16/2006DE19647398B4 Bipolarer Transistor mit isoliertem Gate The insulated gate bipolar transistor
03/16/2006DE19516339B4 Verfahren zur Herstellung eines Halbleiterbauelementes mit niederohmiger Gateelektrode A process for producing a semiconductor device having low-resistance gate electrode
03/16/2006DE102005035029A1 Halbleiterbauteil und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation
03/16/2006DE102004044667A1 Halbleiterbauelement sowie zugehöriges Herstellungsverfahren Semiconductor device and manufacturing method thereof
03/16/2006DE102004042163A1 Thyristor, has short circuit zones, where ratio between sum of cross sectional surfaces of one zone in inner area and surface of area is greater than that between sum of surfaces of another zone in outer area to surface of outer area
03/16/2006DE102004038369A1 Hochvolt-NMOS-Transistor High-voltage NMOS transistor
03/16/2006DE102004037450A1 Schalt- bzw. Verstärker-Bauelement, insbesondere Transistor Switching or amplifier component, in particular transistor
03/16/2006DE102004034821A1 Halbleiter und Verfahren zu dessen Herstellung Semiconductor and process for its preparation
03/16/2006DE10062044B4 Ionensensitive Halbleitersensoren mit HEMT-Struktur Ion-sensitive semiconductor sensors with HEMT structure
03/16/2006DE10017922B4 Cash table for use in shop, has gutter comprising filling device for goods separation bars at beginning, and opening in which roller is stationarily arranged, where roller is supported on upper strand of conveyor
03/16/2006DE10001868B4 Avalanchefester Randabschluß für ein planares Halbleiterleistungsbauelement Avalanche Solid edge termination for a planar semiconductor power device
03/15/2006EP1635608A1 Sound detection mechanism
03/15/2006EP1635454A1 Low-noise amplifier
03/15/2006EP1635400A1 Field effect transistor
03/15/2006EP1635399A1 Lateral MOS device and method of making the same
03/15/2006EP1635398A2 Semiconductor devices having an interfacial dielectric layer and related methods
03/15/2006EP1635397A1 Integrated high voltage power device having an edge termination of enhanced effectiveness
03/15/2006EP1635395A2 Charge trapping semiconductor memory with charge trapping memory cells
03/15/2006EP1635394A1 Dc amplifier and semiconductor integrated circuit thereof
03/15/2006EP1635392A1 Limiter circuit and semiconductor integrated circuit thereof
03/15/2006EP1635385A1 Mis transistor and cmos transistor
03/15/2006EP1635384A1 Method for manufacturing power diode and equipment for the same
03/15/2006EP1634338A1 Semiconductor device having an edge termination structure and method of manufacture thereof
03/15/2006EP1634337A1 Termination structures for semiconductor devices and the manufacture thereof
03/15/2006EP1634336A1 Double-gate transistor with enhanced carrier mobility
03/15/2006EP1634335A2 Optical device for led-based light-bulb substitute
03/15/2006EP1634334A1 Nanowhiskers with pn junctions and methods of fabricating thereof
03/15/2006EP1634328A2 Microelectromechanical systems, and methods for encapsulating and fabricating same
03/15/2006EP1634327A1 Soi shaped structure
03/15/2006EP1634324A1 Method and apparatus for plasma nitridation of gate dielectrics using amplitude modulated radio-frequency energy
03/15/2006EP1634323A2 Complex oxides for use in semiconductor devices and related methods
03/15/2006EP1634296A2 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
03/15/2006EP1593160A4 Solid state image pickup apparatus and radiation image pickup apparatus
03/15/2006CN1748321A Devices having vertically-disposed nanofabric articles and methods of marking the same
03/15/2006CN1748320A Field effect transistor
03/15/2006CN1748319A Uv-blocking layer for reducing uv-induced charging of sonos dual-bit flash memory devices in beol processing
03/15/2006CN1748318A Thin film transistor substrate
03/15/2006CN1748317A Mram cells having magnetic write lines with a stable magnetic state at the end regions
03/15/2006CN1748315A Radiation image pickup device
03/15/2006CN1748309A Low voltage nmos-based electrostatic discharge clamp
03/15/2006CN1748298A Performance in flash memory devices
03/15/2006CN1748289A Method of forming an element of a microelectronic circuit
03/15/2006CN1748287A Silicon semiconductor substrate and its manufacturing method
03/15/2006CN1748264A Ferroelectric film, semiconductor device, ferroelectric film manufacturing method, and ferroelectric film manufacturing apparatus
03/15/2006CN1748237A Electronic device with electrostatic discharge protection circuitry
03/15/2006CN1747817A Vibration-type paper cutting device
03/15/2006CN1747194A Production of tin dioxide-base thin-membrane gas-sensing device by ink-jet printer
03/15/2006CN1747182A 化合物半导体装置及其制造方法 The compound semiconductor device and manufacturing method thereof
03/15/2006CN1747181A Power semiconductor device for preventing punchthrough and manufacturing method thereof
03/15/2006CN1747180A Power semiconductor device having an improved ruggedness
03/15/2006CN1746756A Array substrate, method of manufacturing the same and liquid crystal display panel having the same
03/15/2006CN1746681A Differential overload-proof microchannel accelerometer and production thereof
03/15/2006CN1245827C Solid-state camera element and its manufacturing method
03/15/2006CN1245800C Load driving circuits with follow current diode
03/15/2006CN1245769C 溶液加工 Solution processing
03/15/2006CN1245766C Semiconductor device and its making method
03/15/2006CN1245765C Enhanced T-shaped grid and its making method
03/15/2006CN1245764C Ferroelectric memory transistor and its forming method
03/15/2006CN1245759C Multi-frequency band power amplifier
03/15/2006CN1245758C Electrostatic discharge protection circuit
03/15/2006CN1245754C Method for making non-volatile semiconductor memory and non-volatile semiconductor memory
03/15/2006CN1245738C Method for forming film pattern, apparatus for manufacturing thin film, conductive film wiring
03/15/2006CN1245667C Graph forming method
03/15/2006CN1245431C Epoxy resin and resin sealed semiconductor device
03/14/2006US7013436 Analog circuit power distribution circuits and design methodologies for producing same
03/14/2006US7013123 Wireless communication system
03/14/2006US7012833 Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs)
03/14/2006US7012792 Semiconductor integrated circuit
03/14/2006US7012665 Liquid crystal display device and method for manufacturing the same
03/14/2006US7012658 Substrate for liquid crystal display and liquid crystal display utilizing the same
03/14/2006US7012657 Method of fabricating liquid crystal display device
03/14/2006US7012656 Electro-optical device
03/14/2006US7012646 Reset driver circuit disposed on the same substrate as the image sensor
03/14/2006US7012583 Apparatus and method for testing pixels of flat panel display
03/14/2006US7012554 Thermoelectric vehicle tracking device
03/14/2006US7012475 Method and apparatus for effecting high-frequency amplification or oscillation
03/14/2006US7012338 Semiconductor device, liquid crystal display device and method of manufacturing the semiconductor device
03/14/2006US7012333 Lead free bump and method of forming the same
03/14/2006US7012332 Semiconductor device having sealing structure for wide gap type semiconductor chip
03/14/2006US7012329 Memory transistor array utilizing insulated word lines as gate electrodes
03/14/2006US7012327 Phased array antenna using (MEMS) devices on low-temperature co-fired ceramic (LTCC) substrates
03/14/2006US7012318 Oxygen-doped n-type gallium nitride freestanding single crystal substrate
03/14/2006US7012317 Tunable thin film capacitor
03/14/2006US7012316 Isolation structures in semiconductor integrated circuits (IC)
03/14/2006US7012313 MOS transistor in a single-transistor memory cell having a locally thickened gate oxide
03/14/2006US7012312 Semiconductor device with multilayer conductive structure formed on a semiconductor substrate
03/14/2006US7012311 Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof
03/14/2006US7012310 Array of multi-bit ROM cells with each cell having bi-directional read and a method for making the array