Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2006
09/07/2006US20060197076 Carbon nanotube resonator transistor and method of making same
09/07/2006US20060196270 Acceleration sensor
09/07/2006DE19605633B4 Verfahren zur Herstellung von Dioden mit verbesserter Durchbruchspannungscharakteristik Process for the preparation of diodes having improved breakdown voltage characteristic
09/07/2006DE112004001922T5 Flash-Architektur mit abgesenktem Kanal für geringere Kurzkanaleffekte Flash architecture with reduced channel for lower short-channel effects
09/07/2006DE102005045078A1 Feldeffekttransistoren mit einem verspannten Siliziumkanal und Verfahren zum Herstellen derselben Field effect transistors with a strained silicon channel and methods for manufacturing the same
09/07/2006DE102005009019A1 Feldeffekttransistor mit Gate-Spacerstruktur und niederohmiger Kanalankoppelung Field effect transistor having gate-spacer structure and lower impedance Kanalankoppelung
09/07/2006DE102005009000A1 Mittels Feldeffekt steuerbares Halbleiterbauelement mit verbesserter Inversdiode und Herstellungsverfahren hierfür By means of field-effect-controllable semiconductor component having improved inverse diode, and manufacturing method thereof
09/07/2006DE10158496B4 Leistungshalbleiterbauelement mit Temperaturdetektor Power semiconductor component with temperature detector
09/07/2006DE10143515B4 Maskenanordnung für einen Abbildungsprozess, Verfahren zu deren Herstellung sowie Verfahren zum optischen Abbilden bzw. zum Herstellen eines Kompensationsbauelements A mask assembly for a mapping process, a process for their preparation and methods for optical imaging or for producing a compensation device
09/07/2006DE10123818B4 Anordnung mit Schutzfunktion für ein Halbleiterbauelement Arrangement with a protective function for a semiconductor device
09/06/2006EP1699088A1 Rectifying device and electronic circuit employing same, and process for producing rectifying device
09/06/2006EP1699087A1 Semiconductor device and its manufacturing method
09/06/2006EP1699086A1 Semiconductor device manufacturing method and semiconductor device
09/06/2006EP1699085A2 III-V nitride semiconductor device and production method thereof
09/06/2006EP1699084A2 High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor
09/06/2006EP1699083A2 Termination for SIC trench devices
09/06/2006EP1697998A1 Field effect transistor with a heterostructure and associated production method
09/06/2006EP1697997A1 Image display screen and method for controlling said screen
09/06/2006EP1697996A2 Synthetic antiferromagnet structures for use in mtjs in mram technology
09/06/2006EP1697995A1 Trench gate field effect devices
09/06/2006EP1697994A1 Transistor gate electrode having conductor material layer
09/06/2006EP1697992A2 Sidewall formation for high density polymer memory element array
09/06/2006EP1697983A1 Highly efficient gallium nitride based light emitting diodes via surface roughening
09/06/2006EP1697982A1 Method of manufacturing a trench-gate semiconductor device
09/06/2006EP1697979A2 A semiconductor substrate with solid phase epitaxial regrowth with reduced depth of doping profile and method of producing same
09/06/2006EP1697978A1 A semiconductor substrate with solid phase epitaxial regrowth with reduced junction leakage and method of producing same
09/06/2006EP1697977A1 Method of manufacturing a semiconductor device and semiconductor device obtained with such a method
09/06/2006EP1697973A1 Small volume process chamber with hot inner surfaces
09/06/2006EP1697965A1 NON-POLAR (A1, B, In, Ga)N QUANTUM WELLS
09/06/2006EP1697495A2 Methodology and apparatus for the detection of biological substances
09/06/2006EP1405341B8 Bipolar transistor with raised extrinsic base fabricated in an integrated bicmos circuit
09/06/2006EP0924769B1 Method of transferring thin film devices
09/06/2006CN1830091A H-bridge with single lead frame
09/06/2006CN1830090A Device threshold control of front-gate silicon-on-insulator MOSFET using a self-aligned back-gate
09/06/2006CN1830089A Eeprom with multi-member floating gate
09/06/2006CN1830088A 改进的集成电路衬底材料和方法 IC substrate materials and methods for improvement
09/06/2006CN1830080A High-heat-resistant semiconductor device
09/06/2006CN1830074A Method for asymmetric spacer formation
09/06/2006CN1830073A Field effect transistor having a doped gate electrode with reduced gate depletion and method of forming the transistor
09/06/2006CN1830068A Method for slowing down dopant-enhanced diffusion in substrates and devices fabricated therefrom
09/06/2006CN1830067A Process for fabricating semiconductor device
09/06/2006CN1829830A Silicon carbide product, method for producing same, and method for cleaning silicon carbide product
09/06/2006CN1828970A Method of manufacturing semiconductor device
09/06/2006CN1828963A A thin film transistor, a method for preparing the same and a flat panel display employing the same
09/06/2006CN1828945A Memory device with silicon rich silicon oxide layer and method of manufacturing the same
09/06/2006CN1828944A Non-volatile memory cells, memory arrays with the same
09/06/2006CN1828943A Semiconductor device and method for manufacturing the same
09/06/2006CN1828942A RF DMOS power device
09/06/2006CN1828941A 半导体器件 Semiconductor devices
09/06/2006CN1828940A 半导体装置 Semiconductor device
09/06/2006CN1828939A RF switch and method for amending dual gate transistor as RF switch
09/06/2006CN1828938A Semiconductor device doped with Sb,Ga or Bi and method of manufacturing the same
09/06/2006CN1828937A Single metal gate complementary type MOS element
09/06/2006CN1828936A High voltage transistor and methods of manufacturing the same
09/06/2006CN1828935A Semiconductor component and its manufacturing method and memory element and its operating method
09/06/2006CN1828934A Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain
09/06/2006CN1828933A MOSFET having a channel mechanically stressed by an epitaxially grown, high K strain layer
09/06/2006CN1828932A Semiconductor device, electronic device, and method of manufacturing semiconductor device
09/06/2006CN1828931A Semiconductor device, electronic device, and method of manufacturing semiconductor device
09/06/2006CN1828930A Electronic devices formed on substrates and their fabrication methods
09/06/2006CN1828929A Bipolar transistor and related method of fabrication
09/06/2006CN1828927A Organic light-emitting diode display panel and its polysilicon channel layer forming method
09/06/2006CN1828911A Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the same
09/06/2006CN1828907A Symmetrical and self-aligned non-volatile memory structure
09/06/2006CN1828902A Semiconductor device and method for manufacturing the same
09/06/2006CN1828896A Static discharge protection circuit and its diode
09/06/2006CN1828852A Thin film transistor and manufacturing method thereof
09/06/2006CN1828851A Thin film transistor and manufacturing method thereof
09/06/2006CN1828850A Thin film transistor and manufacturing method thereof
09/06/2006CN1828836A Epitaxial semiconductor substrate manufacturing method and semiconductor component production method
09/06/2006CN1828835A Crystalline gallium nitride base compound growth method and semiconductor component containing gallium nitride base compound
09/06/2006CN1828833A Semiconductor structure and method for manufacturing semiconductor structure
09/06/2006CN1828831A Semiconductor substrate forming method and formed semiconductor substrate
09/06/2006CN1274031C Manufacturing method of scholttky barrier diode
09/06/2006CN1274030C 一种厚膜soi场效应晶体管 A thick film field effect transistor soi
09/06/2006CN1274029C Combined-grid FET
09/06/2006CN1274028C Double diffused field effect transistor having reduced on-resistance
09/06/2006CN1274027C Power semiconductor device
09/06/2006CN1274026C Nonvolatile semiconductor storage device and its manufacturing method
09/06/2006CN1274024C Ferroelectric semiconductor memory
09/06/2006CN1274022C Semiconductor device for variable capacity capacitor and amplifier
09/06/2006CN1274018C Method of mfg. semiconductor device
09/06/2006CN1274009C Method for making thin-film semicondcutor device
09/06/2006CN1273866C Ethcing technique of anisotropic nitride by inlay etch method
09/06/2006CN1273859C Active matrix substrate and display device
09/06/2006CN1273857C Liquid-crystal displaying devices
09/06/2006CN1273836C 加速度传感器 Acceleration sensor
09/06/2006CN1273511C Method of preparing a polymer, method of preparing a compound, compounds, polymers, and method for manufacturing and electronic device
09/05/2006US7102941 Semiconductor memory device and portable electronic apparatus
09/05/2006US7102931 Nonvolatile semiconductor memory apparatus and method of producing the same
09/05/2006US7102900 Electronic circuit control element with tap element
09/05/2006US7102723 Liquid crystal display device and method for fabricating the same
09/05/2006US7102718 Liquid crystal display device with particular TFT structure and method of manufacturing the same
09/05/2006US7102674 Charge transfer device
09/05/2006US7102606 Display device of active matrix type
09/05/2006US7102605 Integrated displays using nanowire transistors
09/05/2006US7102600 System and method for manufacturing a electro-optical device
09/05/2006US7102367 Probe card and testing method of semiconductor chip, capacitor and manufacturing method thereof
09/05/2006US7102293 Organic EL panel
09/05/2006US7102238 Semiconductor device and manufacturing method thereof