Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/2006
08/31/2006US20060194419 Crystalline-si-layer-bearing substrate and its production method, and crystalline si device
08/31/2006US20060194409 Process for manufacturing a SOI wafer with improved gettering capability
08/31/2006US20060194405 Semiconductor device and method of fabricating the same
08/31/2006US20060194399 Silicide Gate Transistors and Method of Manufacture
08/31/2006US20060194395 Metal hard mask method and structure for strained silicon MOS transistors
08/31/2006US20060194394 Mask ROM, method for fabricating the same, and method for coding the same
08/31/2006US20060194392 Mis-type semiconductor device
08/31/2006US20060194387 High performance transistors with SiGe strain
08/31/2006US20060194383 Semiconductor device and method for manufacturing the same
08/31/2006US20060194379 Field effect transistor and method for manufacturing same
08/31/2006US20060194375 Semiconductor device and method of manufacturing thereof
08/31/2006US20060194368 Thin film translator array panel and a method for manufacturing the panel
08/31/2006US20060194363 Method of manufacturing a flexible electronic device and flexible device
08/31/2006US20060194362 Sensor including lead frame and method of forming sensor including lead frame
08/31/2006US20060194361 MEMS packaging using a non-silicon substrate for encapsulation and interconnection
08/31/2006US20060194348 Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same
08/31/2006US20060192907 Method of fabricating array substrate having double-layered patterns
08/31/2006US20060192286 Semiconductor device
08/31/2006US20060192269 Substrate assembly for stressed systems
08/31/2006US20060192268 Semiconductor varactor with reduced parasitic resistance
08/31/2006US20060192267 Inductor fabricated with dry film resist and cavity and method of fabricating the inductor
08/31/2006US20060192266 Semiconductor memory having charge trapping memory cells and fabrication method thereof
08/31/2006US20060192265 System-on-chip with shield rings for shielding functional blocks therein from electromagnetic interference
08/31/2006US20060192259 Bonded assembly having improved adhesive bond strength
08/31/2006US20060192258 Semiconductor device
08/31/2006US20060192257 Semiconductor device and fabrication method thereof
08/31/2006US20060192256 High-voltage power semiconductor device
08/31/2006US20060192255 Self-aligned semiconductor contact structures and methods for fabricating the same
08/31/2006US20060192254 Semiconductor memory device
08/31/2006US20060192252 Semiconductor device allowing modulation of a gain coefficient and a logic circuit provided with the same
08/31/2006US20060192250 Complementary metal-oxide-semiconductor image sensor and method for fabricating the same
08/31/2006US20060192249 Field effect transistors with vertically oriented gate electrodes and methods for fabricating the same
08/31/2006US20060192248 Memory Device and Method of Manufacturing Including Deuterated Oxynitride Charge Trapping Structure
08/31/2006US20060192247 Nitride semiconductor light-emitting device and method for fabrication thereof
08/31/2006US20060192246 Semiconductor memory device that uses metal nitride as trap site and method of manufacturing the same
08/31/2006US20060192245 Semiconductor memory device and method for manufacturing the same
08/31/2006US20060192244 Symmetrical and self-aligned non-volatile memory structure
08/31/2006US20060192243 Embedded trap direct tunnel non-volatile memory
08/31/2006US20060192242 Low power memory subsystem with progressive non-volatility
08/31/2006US20060192241 Non-volatile memory and manufacturing method thereof
08/31/2006US20060192240 Low power memory subsystem with progressive non-volatility
08/31/2006US20060192239 Permeable capacitor electrode
08/31/2006US20060192238 Intermediate semiconductor device structure including multiple photoresist layers
08/31/2006US20060192237 Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements
08/31/2006US20060192236 Semiconductor device
08/31/2006US20060192235 System and method for reducing shorting in memory cells
08/31/2006US20060192232 Semiconductor device and method of manufacturing semiconductor device
08/31/2006US20060192231 Field effect transistor and its manufacturing method
08/31/2006US20060192229 Semiconductor device and electronic apparatus using the same
08/31/2006US20060192228 Compound semiconductor epitaxial substrate and method for manufacturing same
08/31/2006US20060192227 Composition for preparing electron emitter, electron emitter produced by using the composition, and electron emission device comprising the electron emitter
08/31/2006US20060192224 Semiconductor light emitting device
08/31/2006US20060192222 Light emitting device
08/31/2006US20060192221 Methods, apparatus, and systems with semiconductor laser packaging for high modulation bandwidth
08/31/2006US20060192217 High efficiency light emitting diode (LED) with optimized photonic crystal extractor
08/31/2006US20060192205 Electro-optical device and electronic device
08/31/2006US20060192204 Thin film transistor panel
08/31/2006US20060192203 Solid-state image pickup device
08/31/2006US20060192202 Semiconductor device forming method
08/31/2006US20060192201 Display device
08/31/2006US20060192199 Celluloses and devices thereof
08/31/2006US20060192197 Organic thin film transistor
08/31/2006US20060192196 Method of increasing efficiency of thermotunnel devices
08/31/2006US20060192194 Electronic device contact structures
08/31/2006US20060192193 Phase-change RAM and method for fabricating the same
08/31/2006US20060191800 Positioning microelectronic between electrodes; polishing; removal electrochemical material by moving between electrodes; detecting signals
08/31/2006DE10310128B4 Verfahren zum Erzeugen von Halbleiterzonen mit n-Leitfähigkeit in einem Halbleiterkörper A method for producing semiconductor regions with n-type conductivity in a semiconductor body
08/31/2006DE102006009021A1 Semiconductor device, has copper posts soldered onto side of insulated gate bipolar transistor, where heat generated in transistor is transferred to electrode unit and is radiated by soldering posts onto unit
08/31/2006DE102005009020A1 N-doped semiconductor layer producing method for e.g. vertical field plate trench transistor, involves irradiating part of upper surface of semiconductor body of power transistor with protons, and annealing semiconductor body
08/31/2006DE102004045966B4 Vertikal-Feldeffekttransistor in Source-Down-Struktur Vertical field effect transistor in source-down structure
08/31/2006DE10129346B4 Verfahren zur Herstellung eines Halbleiterbauelementes A process for producing a semiconductor device
08/31/2006CA2630526A1 Joining of dissimilar materials
08/31/2006CA2598311A1 Superconductive articles having density characteristics
08/30/2006EP1696491A1 Non volatile memory and fabrication method thereof
08/30/2006EP1696490A1 Charge compensation semiconductor device and relative manufacturing process
08/30/2006EP1696480A2 Free-standing electrostatically-doped carbon nanotube device and method for making same
08/30/2006EP1696473A2 Silicon nano wires, semiconductor device including the same, and method of manufacturing the silicon nano wires
08/30/2006EP1696368A1 Semiconductor device and driving method thereof
08/30/2006EP1696053A1 Nano-array electrode manufacturing method and photoelectric converter using same
08/30/2006EP1695937A2 Integrated micro electro-mechanical system and manufacturing method thereof
08/30/2006EP1695389A1 Low-power multiple-channel fully depleted quantum well cmosfets
08/30/2006EP1695388A2 Multiband semiconductor compositions for photovoltaic devices
08/30/2006EP1695387A2 Low crosstalk substrate for mixed-signal integrated circuits
08/30/2006EP1695381A1 Method for forming non-amorphous, ultra-thin semiconductor devices using sacrificial implantation layer
08/30/2006EP1694615A2 Method and apparatus for forming an soi body-contacted transistor
08/30/2006EP1694506A1 Method and apparatus for printing a patterned layer on a flat substrate with a flat-type-bed
08/30/2006EP1224696B1 Solid-source doping for source/drain of flash memory
08/30/2006EP1078402B1 Semiconductor system with trenches for separating doped areas
08/30/2006EP0749632B1 Electrostatic discharge protection of isfet sensors
08/30/2006CN2812302Y Thin film transistor structure capable of reducing starting voltage excursion
08/30/2006CN2812300Y Plastic package diode lead
08/30/2006CN1826696A Varying carrier mobility in semiconductor devices to achieve overall design goals
08/30/2006CN1826695A Electronic assembly having a die with rounded corner edge portions and a method of fabricating the same
08/30/2006CN1826694A Nanowhiskers with PN junctions and methods of fabricating thereof
08/30/2006CN1826690A Fet channel having a strained lattice structure along multiple surfaces
08/30/2006CN1826682A Anchors for microelectromechanical systems having an SOI substrate, and method of fabricating same
08/30/2006CN1825629A Top gate type thin film transistor
08/30/2006CN1825628A Semiconductor device including high-k insulating layer and method of manufacturing the same
08/30/2006CN1825627A Semiconductor element and method of forming the same
08/30/2006CN1825626A 半导体元件 Semiconductor device