Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2007
01/23/2007US7166513 Manufacturing method a flash memory cell array
01/23/2007US7166510 Method for manufacturing flash memory device
01/23/2007US7166509 Write once read only memory with large work function floating gates
01/23/2007US7166508 Method for forming nonvolatile memory device including insulating film containing nitrogen (nitride)
01/23/2007US7166505 Method for making a semiconductor device having a high-k gate dielectric
01/23/2007US7166503 Method of manufacturing a TFT with laser irradiation
01/23/2007US7166502 Method of manufacturing a thin film transistor
01/23/2007US7166501 Method for fabricating polycrystalline silicon liquid crystal display device
01/23/2007US7166500 Method of manufacturing a semiconductor device
01/23/2007US7166499 Method of fabricating a thin film transistor for an array panel
01/23/2007US7166495 Method of fabricating a multi-die semiconductor package assembly
01/23/2007US7166485 Superlattice nanocrystal Si-SiO2 electroluminescence device
01/23/2007US7166483 High brightness light-emitting device and manufacturing process of the light-emitting device
01/23/2007US7166232 Method for producing a solid body including a microstructure
01/23/2007US7166185 Forming system for insulation film
01/23/2007US7165866 Light enhanced and heat dissipating bulb
01/23/2007US7165440 Frequency characteristics measuring method and device for acceleration sensor
01/18/2007WO2007009095A2 Coated conductors
01/18/2007WO2007009024A2 Folded frame carrier for mosfet bga
01/18/2007WO2007008934A1 Method and apparatus for use in improving linearity of mosfets using an accumulated charge sink
01/18/2007WO2007008717A1 Surface mountable light emitting diode assemblies packaged for high temperature operation
01/18/2007WO2007008344A1 Integrated circuit embodying a non-volatile memory cell
01/18/2007WO2007008302A1 Nitric oxide reoxidation for improved gate leakage reduction of sion gate dielectrics
01/18/2007WO2007008190A1 Ccd charge-splitter adjustment by static charge gradient
01/18/2007WO2007008173A1 Semiconductor structure for transistors with enhanced subthreshold swing and methods of manufacture thereof
01/18/2007WO2007007714A1 Diode element device for solar cell
01/18/2007WO2007007670A1 Semiconductor device and electric device
01/18/2007WO2007007589A1 Field effect transistor and method for manufacturing same
01/18/2007WO2007007548A1 Transistor and method for operating same
01/18/2007WO2007007486A1 Field effect transistor
01/18/2007WO2007007445A1 Semiconductor device and method for manufacturing same
01/18/2007WO2007007402A1 Method for simulating ion implantation and method for fabricating semiconductor device
01/18/2007WO2007007375A1 Semiconductor device and fabrication method thereof
01/18/2007WO2007006764A2 Method of manufacturing a semiconductor power device
01/18/2007WO2007006507A1 Power field effect transistor and manufacturing method thereof
01/18/2007WO2007006506A1 Power field effect transistor and manufacturing method thereof
01/18/2007WO2007006505A1 Semiconductor power device with multiple drain structure and corresponding manufacturing process
01/18/2007WO2007006504A2 Power field effect transistor and manufacturing method thereof
01/18/2007WO2007006503A1 Semiconductor power device with multiple drain and corresponding manufacturing process
01/18/2007WO2007006502A1 Power device having monolithic cascode structure and integrated zener diode
01/18/2007WO2007006337A1 A temperature sensing device
01/18/2007WO2007006136A1 Hybrid nanocomposite semiconductor material and method of producing inorganic semiconductor therefor
01/18/2007WO2006130375A3 Technique for reducing silicide non-uniformities by adapting avertical dopant profile
01/18/2007WO2006094280A3 Metal-insulator-metal capacitor manufactured using etchback
01/18/2007WO2006076036A3 Nanostructure assemblies, methods and devices thereof
01/18/2007WO2005122250A3 High power mcm package with improved planarity and heat dissipation
01/18/2007WO2005109522A3 Magnetoresistive memory soi cell
01/18/2007WO2005102329B1 An innovative screening method for coronary heart disease and stroke
01/18/2007WO2005086868A3 Metamorphic buffer on small lattice constant substrates
01/18/2007US20070015370 Manufacturing method for semiconductor device
01/18/2007US20070015340 Method and structure for interfacing electronic devices
01/18/2007US20070015339 Methods of forming trench isolation in the fabrication of integrated circuitry, methods of fabricating memory circuitry, integrated circuitry and memory integrated circuitry
01/18/2007US20070015337 Semiconductor device and method for fabricating the same
01/18/2007US20070015331 Nor flash memory cell with high storage density
01/18/2007US20070015327 Method of fabricating a trench capacitor dram device
01/18/2007US20070015323 Semiconductor device and method of manufacturing the same
01/18/2007US20070015322 Method of forming doped regions in the bulk substrate of an soi substrate to control the operational characteristics of transistors formed thereabove, and an integrated circuit device comprising same
01/18/2007US20070015321 Manufacturing method for semiconductor device
01/18/2007US20070015318 Method of manufacturing a thin film transistor
01/18/2007US20070015316 Folded frame carrier for MOSFET BGA
01/18/2007US20070015303 Nanotube device structure and methods of fabrication
01/18/2007US20070015302 Semiconductor device and method of manufacturing thereof
01/18/2007US20070015297 Failure analysis vehicle for yield enhancement with self test at speed burnin capability for reliability testing
01/18/2007US20070015069 mask includes multiple transmissive areas having a plurality of first slits for adjusting energy of the laser illumination passing through the mask; and an opaque area; for laser illumination to convert amorphous silicon into polysilicon
01/18/2007US20070015066 Mask for sequential lateral solidification (SLS) process and a method for crystallizing amorphous silicon by using the same
01/18/2007US20070013859 Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same
01/18/2007US20070013073 Method and structure for reduction of soft error rates in integrated circuits
01/18/2007US20070013069 Wiring structure and method for manufacturing the same
01/18/2007US20070013031 Vertical pnp transistor and method of making same
01/18/2007US20070013030 Memory cell comprising one MOS transistor with an isolated body having a reinforced memory effect
01/18/2007US20070013029 Semiconductor device and MIM capacitor
01/18/2007US20070013028 Semiconductor device and method of manufacturing the same
01/18/2007US20070013027 Semiconductor device and method of manufacturing the same
01/18/2007US20070013026 Varactor structure and method for fabricating the same
01/18/2007US20070013025 Semiconductor memory device and method of manufacturing the same
01/18/2007US20070013024 High-voltage transistor having shielding gate
01/18/2007US20070013023 Isolation structure configurations for modifying stresses in semiconductor devices
01/18/2007US20070013021 Semiconductor device with a conduction enhancement layer
01/18/2007US20070013016 Method and structure for generating offset fields for use in mram devices
01/18/2007US20070013014 High temperature resistant solid state pressure sensor
01/18/2007US20070013013 Semiconductor chemical sensor
01/18/2007US20070013012 Etch-stop layer structure
01/18/2007US20070013011 Semiconductor device having guard ring and manufacturing method thereof
01/18/2007US20070013010 High performance MOS device with graded silicide
01/18/2007US20070013009 Semiconductor device including I/O oxide and nitrided core oxide on substrate, and method of manufacture
01/18/2007US20070013007 Semiconductor device and method of fabricating the same
01/18/2007US20070013006 Apparatus and method of manufacture for integrated circuit and CMOS device including epitaxially grown dielectric on silicon carbide
01/18/2007US20070013005 Semiconductor device and method for manufacturing the same
01/18/2007US20070013004 Tarp loading structure and method for using same
01/18/2007US20070013003 N-ary Mask-Programmable Memory
01/18/2007US20070013002 Field effect transistor with a heterostructure and associated production method
01/18/2007US20070013000 Semiconductor device and manufacturing method of the same, and non-isolated DC/DC converter
01/18/2007US20070012999 Method for Making a Semiconductor Device Including Regions of Band-Engineered Semiconductor Superlattice to Reduce Device-On Resistance
01/18/2007US20070012998 Semiconductor device
01/18/2007US20070012997 Transistor for semiconductor device and method of forming the same
01/18/2007US20070012996 Vertical channel semiconductor devices and methods of manufacturing the same
01/18/2007US20070012995 Three-dimensional high voltage transistor and method for manufacturing the same
01/18/2007US20070012994 Semicondutor device and manufacturing method thereof
01/18/2007US20070012993 Non-volatile memory device, non-volatile memory cell thereof and method of fabricating the same
01/18/2007US20070012992 Method for manufacturing and operating a non-volatile memory