Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2007
01/18/2007US20070012991 Semiconductor memory device including multi-layer gate structure
01/18/2007US20070012990 Nonvolatile semiconductor memory with transistor whose gate electrode has bird's beak
01/18/2007US20070012989 Nonvolatile semiconductor memory and fabrication method for the same
01/18/2007US20070012988 High density NAND non-volatile memory device
01/18/2007US20070012986 Phase-change memory device including nanowires and method of manufacturing the same
01/18/2007US20070012985 Nanowire capacitor and methods of making same
01/18/2007US20070012984 Semiconductor device incorporating an electrical contact to an internal conductive layer and method for making the same
01/18/2007US20070012983 Terminations for semiconductor devices with floating vertical series capacitive structures
01/18/2007US20070012982 Multipurpose metal fill
01/18/2007US20070012981 Semiconductor memory device including multi-layer gate structure
01/18/2007US20070012980 Large-area nanoenabled macroelectronic substrates and uses therefor
01/18/2007US20070012979 NAND flash memory device and method of fabricating the same
01/18/2007US20070012978 Junction-isolated depletion mode ferroelectric memory devices and systems
01/18/2007US20070012977 Semiconductor device and method for forming the same
01/18/2007US20070012976 Semiconductor device and manufacturing method of the same
01/18/2007US20070012975 Coated conductors
01/18/2007US20070012974 Method for manufacturing material layer, method for manufacturing ferroelectric capacitor using the same, ferroelectric capacitor manufactured by the same method, semiconductor memory device having ferroelectric capacitor and manufacturing method thereof
01/18/2007US20070012973 Semiconductor device having MIM capacitor and manufacturing method thereof
01/18/2007US20070012972 Magnetic memory device
01/18/2007US20070012961 N-type carbon nanotube field effect transistor and method of fabricating the same
01/18/2007US20070012960 Direct channel stress
01/18/2007US20070012959 Memory device
01/18/2007US20070012958 Distributed high voltage jfet
01/18/2007US20070012957 Electrode and method for making electrode
01/18/2007US20070012956 Phase change memory cell having nanowire electrode
01/18/2007US20070012954 Solid state image pickup device and endoscope
01/18/2007US20070012953 Solid-state image sensing device driving method and solid-state image sensing apparatus
01/18/2007US20070012950 Production of electronic devices
01/18/2007US20070012947 Direct FET device for high frequency application
01/18/2007US20070012945 Semiconductor device and method for manufacturing semiconductor device
01/18/2007US20070012942 Light emitting diode package with coaxial leads
01/18/2007US20070012937 High-brightness light emitting diode having reflective layer
01/18/2007US20070012936 Silicophosphate-based phosphor and light-emitting device including the same
01/18/2007US20070012934 Method and system of LED light extraction using optical elements
01/18/2007US20070012930 High brightness light-emitting device and manufacturing process of the light-emitting device
01/18/2007US20070012929 Nitride-based semiconductor light-emitting device and method of fabricating the same
01/18/2007US20070012927 Radiation-emitting optoelectronic semiconductor chip with a diffusion barrier
01/18/2007US20070012926 Display device with reduced number of wires and manufacturing method thereof
01/18/2007US20070012925 Liquid crystal display panel with different substrate materials and method of making the liquid crystal display panel
01/18/2007US20070012924 Semiconductor device and method for manufacturing same
01/18/2007US20070012923 Electronic circuit
01/18/2007US20070012922 Field effect transistor and display using same
01/18/2007US20070012921 Semiconductor device including semiconductor circuit made from semiconductor element and manufacturing method thereof
01/18/2007US20070012920 Flat panel display and method for fabricating the same
01/18/2007US20070012919 Thin film transistor substrate and method for fabricating the same
01/18/2007US20070012918 Liquid crystal display device and optical film assembly for the liquid crystal display device
01/18/2007US20070012917 Pixel with transfer gate with no isolation edge
01/18/2007US20070012915 Organic light emitting display device
01/18/2007US20070012914 Field effect transistor, method of producing the same, and method of producing laminated member
01/18/2007US20070012912 Semiconductor Device Including a Strained Superlattice and Overlying Stress Layer and Related Methods
01/18/2007US20070012911 Semiconductor Device Including Regions of Band-Engineered Semiconductor Superlattice to Reduce Device-On Resistance
01/18/2007US20070012910 Semiconductor Device Including a Channel with a Non-Semiconductor Layer Monolayer
01/18/2007US20070012909 Semiconductor Device Including a Strained Superlattice Between at Least One Pair of Spaced Apart Stress Regions
01/18/2007US20070012908 III/V-semiconductor
01/18/2007US20070012907 Doped Semiconductor Nanocrystal Layers And Preparation Thereof
01/18/2007US20070012906 Phase-change semiconductor device and methods of manufacturing the same
01/18/2007US20070012905 Novel phase change random access memory
01/18/2007US20070012876 Surface-normal optical path length for infrared photodetection
01/18/2007DE112005000441T5 Halbleiterbauteil und Verfahren zur Herstellung desselben A semiconductor device and method of manufacturing the same
01/18/2007DE112005000358T5 Bidirektionaler III-Nitrid-Schalter Bi-directional III-nitride switch
01/18/2007DE102005047056B3 Power semiconductor element and production process has field electrode structure with at least two first field electrodes and a second field electrode in a second direction with dielectric separation between them
01/18/2007DE102005032074A1 Semiconductor element and production process especially for an insulated gate bipolar transistor has very highly doped region between low and highly oppositely doped regions
01/18/2007DE102005031836A1 Halbleiterleistungsmodul mit SiC-Leistungsdioden und Verfahren zur Herstellung desselben The semiconductor power module of the same with SiC power diode and methods for preparing
01/17/2007EP1744371A1 GaN SEMICONDUCTOR DEVICE
01/17/2007EP1744365A2 Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
01/17/2007EP1744364A2 Semiconductor devices
01/17/2007EP1744352A2 Method for forming a fully germano-silicided gate mosfet and devices obtained thereof
01/17/2007EP1744351A2 Method for forming a fully silicided gate MOSFET and devices obtained thereof
01/17/2007EP1744206A2 Liquid crystal display device
01/17/2007EP1744140A2 An improved apparatus for correcting electrical signals
01/17/2007EP1744121A1 Microfabricated tuning fork gyroscope for sensing out-of-plane rotation
01/17/2007EP1743949A1 Production of high-purity zirconium or hafnium metal and powder for target and film applications
01/17/2007EP1743387A2 Semiconductor device using location and sign of the spin of electrons
01/17/2007EP1743383A2 Magnetoresistive memory soi cell
01/17/2007EP1743382A1 Co-planar thin film transistor having additional source/drain insulation layer
01/17/2007EP1743381A2 Electromechanical electron transfer devices
01/17/2007EP1743380A1 Split-channel antifuse array architecture
01/17/2007EP1743379A2 Hot electron transistor
01/17/2007EP1743378A1 Semiconductor device and method of manufacturing such a device
01/17/2007EP1743376A2 Active manipulation of light in a silicon-on-insulator (soi) structure
01/17/2007EP1743375A1 Fabrication of active areas of different natures directly onto an insulator: application to the single or double gate mos transistor
01/17/2007EP1743373A2 Method and device with durable contact on silicon carbide
01/17/2007EP1743358A2 Light emitting diode component
01/17/2007EP1743342A1 An organic electronic circuit with functional interlayer and method for making the same
01/17/2007EP1743339A2 Silicon on insulator read-write non-volatile memory comprising lateral thyristor and trapping layer
01/17/2007EP1451873A4 Wearable biomonitor with flexible thinned integrated circuit
01/17/2007EP1234332B1 Dram cell structure with tunnel barrier
01/17/2007EP1138091B1 Conductive structure based on poly-3,4-alkenedioxythiophene (pedot) and polystyrenesulfonic acid (pss)
01/17/2007EP1048076B1 Low trigger and holding voltage scr device for esd protection
01/17/2007CN1898804A Rectifying device and electronic circuit employing same, and process for producing rectifying device
01/17/2007CN1898803A Semiconductor device comprising a heterojunction
01/17/2007CN1898802A Image display screen and method for controlling said screen
01/17/2007CN1898801A Vertical gate semiconductor device and process for fabricating the same
01/17/2007CN1898798A Electro-resistance element and method of manufacturing the same
01/17/2007CN1898792A Contactless flash memory array
01/17/2007CN1898784A Semiconductor device comprising a heterojunction
01/17/2007CN1898779A A semiconductor substrate with solid phase epitaxial regrowth with reduced depth of doping profile and method of producing same
01/17/2007CN1898774A Small volume process chamber with hot inner surfaces
01/17/2007CN1897317A Gallium nitride-based iii-v group compound semiconductor device
01/17/2007CN1897309A Tft and tft substrate using the same, method of fabricating tft substrate and liquid crystal display