Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2007
01/24/2007CN2862106Y Thin-film transistor substrate and liquid crystal displaying device
01/24/2007CN1902762A Transistor with quantum dots in its tunnelling layer
01/24/2007CN1902761A 有机薄膜晶体管 The organic thin film transistor
01/24/2007CN1902760A Silicon carbide semiconductor device and its manufacturing method
01/24/2007CN1902759A Bipolar transistor, semiconductor device comprising the bipolar transistor
01/24/2007CN1902758A Transistor with silicon and carbon layer in the channel region
01/24/2007CN1902748A Shallow trench isolation process and structure
01/24/2007CN1902744A Method of fabricating integrated circuit channel region
01/24/2007CN1902742A Damascene tri-gate FinFET
01/24/2007CN1902741A Narrow-body damascene tri-gate finfet having thinned body
01/24/2007CN1902739A Method of varying etch selectivities of a film
01/24/2007CN1902736A Amorphous etch stop for the anisotropic etching of substrates
01/24/2007CN1902735A Method for making a semiconductor device having a metal gate electrode
01/24/2007CN1902734A Method for producing semiconductor device
01/24/2007CN1902337A CVD tantalum compounds for FET gate electrodes
01/24/2007CN1901244A Electro-optic device
01/24/2007CN1901233A 齐纳二极管 Zener diode
01/24/2007CN1901232A Non-volatile memory cells and methods for fabricating non-volatile memory cells
01/24/2007CN1901231A Thin film transistor, method for manufacturing thin-film transistor, and display using thin-film transistor
01/24/2007CN1901230A Thin film transistor, method for manufacturing thin-film transistor, and display using thin-film transistor
01/24/2007CN1901229A Semiconductor device and a method of manufacturing the same
01/24/2007CN1901228A Semiconductor device and semiconductor device manufacturing method
01/24/2007CN1901227A Film transistor and its forming method
01/24/2007CN1901226A Field effect transistor and application device thereof
01/24/2007CN1901225A Semiconductor device and method of fabricating the same
01/24/2007CN1901224A Semiconductor device and random access memory having single gate electrode corresponding to a pair of channel regions
01/24/2007CN1901223A Semiconductor element and its producing method
01/24/2007CN1901222A Method and apparatus for epitaxially coating semiconductor wafer, and coated semiconductor wafer
01/24/2007CN1901208A Array substrate for display device
01/24/2007CN1901207A Semiconductor substrate, semiconductor device, manufacturing method thereof, and method for designing semiconductor substrate
01/24/2007CN1901205A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
01/24/2007CN1901203A Semiconductor device and method for forming a semiconductor structure
01/24/2007CN1901194A Semiconductor device and method for fabricating the same
01/24/2007CN1901167A Semiconductor device and method of manufacturing thereof
01/24/2007CN1901145A Variable capacitor structure and its producing method
01/24/2007CN1900801A Device comprising display region, liquid crystal apparatus and projecting display unit
01/24/2007CN1297015C Nonvolatile memory with ferroelectric gate field effect transistor and manufacture thereof
01/24/2007CN1297014C Transistor array possessing shield electrode positioned outside of active unit array
01/24/2007CN1297013C Dipolar transistor and its producing method
01/24/2007CN1297011C Semiconductor device and manufacturing method thereof
01/24/2007CN1297008C Thin film transistor and display device using the same
01/24/2007CN1297007C Semiconductor device
01/24/2007CN1297005C Semiconductor device and bleeder circuit
01/24/2007CN1297003C Semiconductor device and bleeder circuit
01/24/2007CN1296991C Fin FET devices from bulk semiconductor and method for forming
01/24/2007CN1296970C Nitride semiconductor, semiconductor device and manufacturing method thereof
01/24/2007CN1296969C Method of forming semiconductor device
01/24/2007CN1296762C Display panel and its producing method
01/24/2007CN1296715C Semiconductor device
01/23/2007US7167402 Semiconductor storage device, redundancy circuit thereof, and portable electronic device
01/23/2007US7167386 Ferroelectric memory and operating method therefor
01/23/2007US7167350 Design implementation to suppress latchup in voltage tolerant circuits
01/23/2007US7167227 Electrooptic device, driving IC, and electronic apparatus
01/23/2007US7167217 Liquid crystal display device and method for manufacturing the same
01/23/2007US7167154 Display device
01/23/2007US7166925 Semiconductor devices having stereolithographically fabricated protective layers thereon through which contact pads are exposed and assemblies including the same
01/23/2007US7166923 Semiconductor device, electro-optical unit, and electronic apparatus
01/23/2007US7166904 Structure and method for local resistor element in integrated circuit technology
01/23/2007US7166903 Drain extended MOS transistors with multiple capacitors and methods of fabrication
01/23/2007US7166901 Semiconductor device
01/23/2007US7166899 Semiconductor device, and method of fabricating the same
01/23/2007US7166898 Flip chip FET device
01/23/2007US7166896 Cross diffusion barrier layer in polysilicon
01/23/2007US7166895 Semiconductor device including insulating film having a convex portion
01/23/2007US7166894 Schottky power diode with SiCOI substrate and process for making such diode
01/23/2007US7166893 Semiconductor integrated circuit device
01/23/2007US7166892 Shrunk low on-resistance DMOS structure
01/23/2007US7166891 Semiconductor device with etch resistant electrical insulation layer between gate electrode and source electrode
01/23/2007US7166890 Superjunction device with improved ruggedness
01/23/2007US7166889 Semiconductor memory device having a gate electrode and a method of manufacturing thereof
01/23/2007US7166888 Scalable high density non-volatile memory cells in a contactless memory array
01/23/2007US7166887 EEPROM device and method of fabricating the same
01/23/2007US7166886 DRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators
01/23/2007US7166881 Multi-sensing level MRAM structures
01/23/2007US7166879 Photogate for use in an imaging device
01/23/2007US7166878 Image sensor with deep well region and method of fabricating the image sensor
01/23/2007US7166877 High frequency via
01/23/2007US7166876 MOSFET with electrostatic discharge protection structure and method of fabrication
01/23/2007US7166875 Vertical diode structures
01/23/2007US7166874 Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor
01/23/2007US7166867 III-nitride device with improved layout geometry
01/23/2007US7166866 Edge termination for silicon power devices
01/23/2007US7166865 Semiconductor light emitting device and method for manufacturing same
01/23/2007US7166864 Liquid crystal display panel and fabricating method thereof
01/23/2007US7166863 Semiconductor element, semiconductor device, electronic device, TV set and digital camera
01/23/2007US7166862 Semiconductor integrated circuit
01/23/2007US7166861 Thin-film transistor and method for manufacturing the same
01/23/2007US7166860 Electronic device and process for forming same
01/23/2007US7166859 Organic semiconductor transistor element, semiconductor device using the same, and process for producing the semiconductor device
01/23/2007US7166858 Variable capacitor single-electron device
01/23/2007US7166830 Light detecting sensor
01/23/2007US7166796 Method for producing a device for direct thermoelectric energy conversion
01/23/2007US7166689 For use in preparing an organic semiconductor material
01/23/2007US7166538 Method for fabricating semiconductor device
01/23/2007US7166525 High temperature hydrogen annealing of a gate insulator layer to increase etching selectivity between conductive gate structure and gate insulator layer
01/23/2007US7166523 Silicon carbide and method of manufacturing the same
01/23/2007US7166522 Method of forming a relaxed semiconductor buffer layer on a substrate with a large lattice mismatch
01/23/2007US7166517 Semiconductor device and method of manufacture thereof
01/23/2007US7166516 Method for fabricating a semiconductor device including the use of a compound containing silicon and nitrogen to form an insulation film of SiN or SiCN
01/23/2007US7166514 Semiconductor device and method of manufacturing the same