Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/2012
12/26/2012CN102844125A Method of removing/preventing redeposition of protein soils
12/26/2012CN102844093A Filter apparatus, filter housing method, and exposure device
12/26/2012CN102843858A Line base plate for fixedly providing semiconductor chip and manufacturing method thereof
12/26/2012CN102842649A Transmitting method for feeding and discharging of vacuum reaction chamfer and transmitting equipment
12/26/2012CN102842639A Bubbling chip separating device
12/26/2012CN102842620A Thin film transistor and manufacturing method thereof as well as array substrate and display device
12/26/2012CN102842619A Semiconductor device and manufacturing method thereof
12/26/2012CN102842618A Semiconductor structure and method for producing same
12/26/2012CN102842617A MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and manufacturing method thereof
12/26/2012CN102842616A Semiconductor structure and manufacturing method thereof
12/26/2012CN102842615A Semiconductor structure and manufacturing method thereof
12/26/2012CN102842614A Semiconductor device and manufacturing method thereof
12/26/2012CN102842613A Double-heterostructure GaN-based high-electron mobility transistor structure and preparation method
12/26/2012CN102842611A Five-mask insulated gate bipolar transistor (IGBT) chip and manufacturing method thereof
12/26/2012CN102842610A Insulated gate bipolar translator (IGBT) chip and method for producing same
12/26/2012CN102842609A Terminal extension structure and manufacturing method thereof
12/26/2012CN102842608A 绝缘栅双极晶体管及制作方法 Insulated gate bipolar transistor and a method of manufacturing
12/26/2012CN102842607A Germanium-silicon triode base region hard mask membrane layer structure and manufacturing method thereof
12/26/2012CN102842606A Variable grid internal resistance for IGBT (Insulated Gate Bipolar Transistor) chip and design method thereof
12/26/2012CN102842604A Trench gate type insulating gate bipolar transistor and manufacturing method thereof
12/26/2012CN102842603A Metal-oxide-semiconductor field effect transistor (MOSFET) and method for producing same
12/26/2012CN102842602A Amorphous zinc magnesium oxide/carbon nano tube composite thin film transistor and preparation method thereof
12/26/2012CN102842601A Array substrate and manufacture method thereof
12/26/2012CN102842600A Silicon-on-insulator silicon germanium heterojunction bipolar transistor (SOI SiGe HBT) planar integrated device and preparation method thereof
12/26/2012CN102842599A SiC schottky diode and manufacturing method thereof
12/26/2012CN102842598A Improved sawtooth electric field drift region structure for power semiconductor device
12/26/2012CN102842596A 半导体结构及其制造方法 The semiconductor structure and a method of manufacturing
12/26/2012CN102842595A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
12/26/2012CN102842592A CMOS (Complementary Metal Oxide Semiconductor) image sensor module and manufacturing method thereof
12/26/2012CN102842588A Backside illuminated type lighting image sensor and method for producing same
12/26/2012CN102842587A Array substrate, manufacturing method of array substrate and display device
12/26/2012CN102842584A Stress silicon (Si) vertical-groove silicon-on-insulator bipolar complementary metal-oxide semiconductor (SOI BICMOS) integrated device and preparation method
12/26/2012CN102842583A Galvanic isolation device and method
12/26/2012CN102842582A Backplane for flat panel display apparatus, flat panel display apparatus and method of manufacturing backplane
12/26/2012CN102842581A 记忆体结构及其制造方法 Memory structure and its manufacturing method
12/26/2012CN102842580A 动态随机存取存储器及其制造方法 Dynamic random access memory and manufacturing method thereof
12/26/2012CN102842579A Low-leakage low-voltage diode chip and preparation method of chip
12/26/2012CN102842578A Bipolar high electron mobility transistor and methods of forming same
12/26/2012CN102842577A High voltage resistance semiconductor device and method for producing same
12/26/2012CN102842571A Wafer level chip scale package (WLCSP) multiple chip stackable packaging piece based on substrate and tin layer and packaging method thereof
12/26/2012CN102842570A Multiple chip packaging piece based on nickel-palladium alloy or nickel-palladium tin layer and packaging method thereof
12/26/2012CN102842569A Etching barrier layer used for copper interconnection and manufacturing method thereof
12/26/2012CN102842568A Interconnection structure based on carbon nanotube and manufacturing method of interconnection structure
12/26/2012CN102842567A Lead frame fixing device and packaging method
12/26/2012CN102842565A Intelligent card module with coil as well as realization method thereof
12/26/2012CN102842564A Flip-chip package device for integrated switching power supply and flip-chip packaging method
12/26/2012CN102842563A Wafer level chip scale package (WLCSP) single chip packaging piece and plastic packaging method thereof
12/26/2012CN102842562A WLCSP (Wafer Level Chip Size Packaging) single-chip package on basis of substrate and packaging method thereof
12/26/2012CN102842561A WLCSP (Wafer Level Chip Size Packaging) single-chip package and packaging method thereof
12/26/2012CN102842560A Wafer level chip scale package (WLCSP) multiple chip stackable packaging piece and packaging method thereof
12/26/2012CN102842559A Multi-chip package based on nickel palladium gold (NiPdAu) and packaging method thereof
12/26/2012CN102842558A Wafer level chip scale package (WLCSP) multiple chip stackable packaging piece based on solder paste layers and packaging method thereof
12/26/2012CN102842557A Stack frame and method to fabricate thereof
12/26/2012CN102842556A Semiconductor component with dual surfaces exposed and manufacturing method of semiconductor component
12/26/2012CN102842554A WLCSP (Wafer Level Chip Size Packaging) single-chip package on basis of NiPdAu or NiPd and tin layers and packaging method thereof
12/26/2012CN102842553A WLCSP (Wafer Level Chip Size Packaging) single-chip package on basis of NiPdAu or NiPd and packaging method thereof
12/26/2012CN102842552A WLCSP (Wafer Level Chip Size Packaging) single-chip package on basis of paste masks and packaging method thereof
12/26/2012CN102842551A Wafer level chip scale package (WLCSP) multiple chip stackable packaging piece based on substrate and solder paste layer and packaging method thereof
12/26/2012CN102842547A Bond pad design for improved routing and reduced package stress
12/26/2012CN102842546A Semiconductor package and fabrication method thereof
12/26/2012CN102842542A Plastic package chip and manufacturing method thereof
12/26/2012CN102842541A Laminated film and use thereof
12/26/2012CN102842540A Sip package and manufacturing method
12/26/2012CN102842537A Bump structure with barrier layer on post-passivation interconnect
12/26/2012CN102842536A Method of fabricating a cell contact and a digit line for a semiconductor device
12/26/2012CN102842535A Method of forming memory cell access device
12/26/2012CN102842534A Processing method of optical device wafer
12/26/2012CN102842533A Organic light-emitting display device and method of manufacturing the same
12/26/2012CN102842532A Metal programmable fuse device manufacturing method
12/26/2012CN102842531A Semiconductor device and method of forming interconnect structure over seed layer
12/26/2012CN102842530A Thick film material electronic component and preparation method
12/26/2012CN102842529A Alignment device and method to align plates for electronic circuits
12/26/2012CN102842528A Method for transferring workpieces to enter and exit vacuum environment and ensuring workpieces to pass through processing region in vacuum environment and equipment
12/26/2012CN102842527A Automatically centering process piece box for solar cell piece
12/26/2012CN102842526A High temperature etching process tank
12/26/2012CN102842525A Heater unit, fan filter unit, and substrate processing apparatus
12/26/2012CN102842524A Semiconductor manufacturing apparatus
12/26/2012CN102842523A Heat treatment furnace and heat treatment apparatus
12/26/2012CN102842522A Two-fluid nozzle and substrate liquid processing apparatus and substrate liquid processing method
12/26/2012CN102842521A 芯片结合设备 Chip bonding equipment
12/26/2012CN102842520A Online detection device and method for thin film solar cell photovoltaic conversion layer
12/26/2012CN102842519A Method for growing silicon wafer film
12/26/2012CN102842518A Monitoring method after removing polycrystalline silicon dummy gate
12/26/2012CN102842517A Flip-chip bonding method and device
12/26/2012CN102842516A Manufacture method of semiconductor device
12/26/2012CN102842515A Method for assembling semiconductor device
12/26/2012CN102842514A Chip bonding process
12/26/2012CN102842513A Production process adopting rubber packaging chip
12/26/2012CN102842512A Method of manufacturing semiconductor device
12/26/2012CN102842511A Chip packaging method and wafer manufactured through chip packaging method
12/26/2012CN102842510A Semiconductor device with encapsulated electrical connection elements and fabrication process thereof
12/26/2012CN102842509A Thin film transistor and method of manufacturing the same, organic light-emitting display apparatus and method of manufacturing the same
12/26/2012CN102842508A Manufacturing method for semiconductor field effect transistor
12/26/2012CN102842507A Manufacturing method for semiconductor field effect transistor
12/26/2012CN102842506A Forming method of stress semiconductor groove
12/26/2012CN102842505A Field-effect tube and field-effect tube manufacturing method
12/26/2012CN102842504A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
12/26/2012CN102842503A Manufacturing method of semiconductor device and semiconductor device
12/26/2012CN102842502A 绝缘栅双极晶体管及其制作方法 Insulated gate bipolar transistor and manufacturing method thereof
12/26/2012CN102842501A Manufacturing method of high-voltage quick-recovery diode
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