Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
03/2011
03/31/2011US20110073927 Non-volatile memory device and method for manufacturing the same
03/31/2011US20110073926 Nonvolatile semiconductor memory device
03/31/2011US20110073925 Semiconductor device with buried bit lines interconnected to one-side-contact and fabrication method thereof
03/31/2011US20110073922 Contact forming method, semiconductor device manufacturing method, and semiconductor device
03/31/2011US20110073920 Superior fill conditions in a replacement gate approach by corner rounding based on a sacrificial fill material
03/31/2011US20110073919 Method of fabricating finfet device
03/31/2011US20110073918 Semiconductor device and manufacturing method thereof
03/31/2011US20110073917 Method of high density memory fabrication
03/31/2011US20110073913 Method of fabricating semiconductor devices on a group iv substrate with controlled interface properties and diffusion tails
03/31/2011US20110073912 AlGaN/GaN hemt with normally-off threshold minimized and method of manufacturing the same
03/31/2011US20110073909 Replacement spacer for tunnel fets
03/31/2011US20110073908 III-V Semiconductor Device Structures
03/31/2011US20110073907 Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto
03/31/2011US20110073906 High voltage MOSFET diode reverse recovery by minimizing P-body charges
03/31/2011US20110073904 Semiconductor device having SOI substrate and method for manufacturing the same
03/31/2011US20110073902 Semiconductor Body and Method of Producing a Semiconductor Body
03/31/2011US20110073896 System for Wafer-Level Phosphor Deposition
03/31/2011US20110073877 High-current/low cost read-in integrated circuit
03/31/2011US20110073869 Method to reduce dislocation density in silicon using stress
03/31/2011US20110073862 Array structure and fabricating method thereof
03/31/2011US20110073860 Semiconductor device and display device
03/31/2011US20110073859 Reduced Stiction MEMS Device with Exposed Silicon Carbide
03/31/2011US20110073858 Test Structure for Determination of TSV Depth
03/31/2011US20110073856 Thin film transistor
03/31/2011US20110073842 Nano-wire field effect transistor, method for manufacturing the transistor, and integrated circuit including the transistor
03/31/2011US20110073840 Radial contact for nanowires
03/31/2011US20110073837 High-performance single-crystalline n-type dopant-doped metal oxide nanowires for transparent thin film transistors and active matrix organic light-emitting diode displays
03/31/2011US20110073834 Activation of graphene buffer layers on silicon carbide by ultra low temperature oxidation
03/31/2011US20110073830 Phase change random access memory device and method of manufacturing the same
03/31/2011US20110073829 Phase change memory device having a heater with a temperature dependent resistivity, method of manufacturing the same, and circuit of the same
03/31/2011US20110073828 Memristor amorphous metal alloy electrodes
03/31/2011US20110073827 Nanodevice arrays for electrical energy storage, capture and management and method for their formation
03/31/2011US20110073826 Phase change memory device and fabrication method thereof
03/31/2011US20110073825 Memory device and storage apparatus
03/31/2011US20110073781 Ion implantation apparatus
03/31/2011US20110073779 Ion implantation apparatus
03/31/2011US20110073564 Method and apparatus for high efficiency gas dissociation in inductive couple plasma reactor
03/31/2011US20110073521 Wafer container with at least one oval latch
03/31/2011US20110073482 Plating apparatus
03/31/2011US20110073256 Semiconductor manufacturing apparatus
03/31/2011US20110073185 Photovoltaic device and process for producing photovoltaic device
03/31/2011US20110073184 Method for manufacturing monocrystalline thin film and monocrystalline thin film device manufactured thereby
03/31/2011US20110073173 Solar cell and method for manufacturing the same
03/31/2011US20110073168 Layered Structure
03/31/2011US20110073164 Isobutylene-Based Elastomers in Voltaic Cell Applications
03/31/2011US20110073041 Epitaxially Coated Semiconductor Wafer and Device and Method For Producing An Epitaxially Coated Semiconductor Wafer
03/31/2011US20110073039 Semiconductor deposition system and method
03/31/2011DE19964479B4 Mehrkammersystem einer Ätzeinrichtung zur Herstellung von Halbleiterbauelementen A multi-chamber system of an etching apparatus for the production of semiconductor devices
03/31/2011DE112009000361T5 Ultraschall-Reinigungsvorrichtung und Ultraschall-Reinigungsverfahren Ultrasonic cleaning apparatus and ultrasonic cleaning method
03/31/2011DE10331826B4 Transflektives Flüssigkristalldisplay und Verfahren zur Herstellung desselben A transflective liquid crystal display and method of manufacturing the same
03/31/2011DE10219107B4 SOI-Transistorelement mit einem verbesserten Rückseitenkontakt und ein Verfahren zur Herstellung desselben und Verfahren zur Herstellung eines Ohmschen Kontaktes auf einem Substrat SOI transistor of the same element having an improved back-side contact and a method of manufacturing and methods of making an ohmic contact on a substrate
03/31/2011DE102010046770A1 Halbleiteranordnung Semiconductor device
03/31/2011DE102010040441A1 Herstellungsverfahren einer Halbleitervorrichtung Manufacturing method of a semiconductor device
03/31/2011DE102010037434A1 Halbleitervorrichtung vom vertikalen Typ und Verfahren zum Herstellen derselben A semiconductor device of the vertical type and method of making same
03/31/2011DE102010004690A1 Halbleiterbauelement mit Fensteröffnung als Schnittstelle zur Umgebung-Ankopplung A semiconductor device with a window opening as an interface to the surrounding coupling-
03/31/2011DE102009060066A1 Verfahren zum Herstellen eines elektronischen Bauelements sowie elektronisches Bauelement A method for fabricating an electronic device as well as electronic component
03/31/2011DE102009050426B3 Method for aligned application of silicon chips with switching structures on e.g. wafer substrate, involves fixing aligned components on substrate by electrostatic force by applying electrical holding voltage above metallization surfaces
03/31/2011DE102009047890A1 Verbessertes Füllverhalten in einem Austauschgateverfahren durch Eckenverrundung auf der Grundlage eines Opferfüllmaterials Improved filling behavior in a replacement gate process by corner rounding on the basis of a sacrificial filler
03/31/2011DE102009045063A1 Power semiconductor module, has power semiconductor chip arranged on substrate, and heat sink contacting substrate directly and made of plastic-based injection molding compound that exhibits specific heat conductivity
03/31/2011DE102009044038A1 Verfahren zur Herstellung eines Kontaktbereichs eines elektronischen Bauteils Process for the preparation of a contact area of ​​an electronic component
03/31/2011DE102009043628A1 Verbesserte Füllbedingungen in einem Austauschgateverfahren durch Ausführen eines Polierprozesses auf der Grundlage eines Opferfüllmaterials Improved filling conditions in an exchange gate process by performing a polishing process on the basis of a sacrificial filler
03/31/2011DE102009043329A1 Verspannungstechnologie in einer Kontaktebene von Halbleiterbauelementen mittels verspannter leitender Schichten und einem Isolierabstandshalter Bracing technology in a contact plane of semiconductor devices using strained conductive layers and an insulating spacer
03/31/2011DE102009042514A1 Verfahren und Vorrichtung mit SOI-Substratdotierung Method and apparatus SOI substrate doping
03/31/2011DE102009042479A1 Verfahren zum Herstellen einer Anordnung mit einem Bauelement auf einem Trägersubstrat und Anordnung sowie Verfahren zum Herstellen eines Halbzeuges und Halbzeug Method for producing an arrangement with a component on a supporting substrate and assembly and methods of making a semi-finished and semi-finished
03/31/2011DE102009042400A1 Arrangement for size-optimized housing shape, has base chip and another chip arranged on main side of base chip and is electrically conducting by contact element
03/31/2011DE102009042349A1 Semipolare wurtzitische Gruppe-III-Nitrid basierte Halbleiterschichten und darauf basierende Halbleiterbauelemente Semi-polar wurtzite-type group III nitride based semiconductor layers that form the basis semiconductor devices
03/31/2011DE102009042321A1 Method for manufacturing n-doped silicon body utilized in article for e.g. electrical purposes to determine chemical molecules, involves manufacturing body from crystalline Neutron-Transmutation-Doped silicon
03/31/2011DE102009041642A1 Quantendrahtarray-Feldeffekt-(Leistungs-)-Transistor QFET (insbesondere magnetisch - MQFET, aber auch elektrisch oder optisch angesteuert) bei Raumtemperatur, basierend auf Polyacetylen-artige Moleküle Quantum wire array field-effect (power -) - QFET transistor (especially magnetic - MQFET, but not electrically or optically driven) at room temperature, based on polyacetylene-like molecules
03/31/2011DE102009029476A1 Elektronische Vorrichtung zum Schalten von Strömen und Herstellungsverfahren für dieselbe An electronic device for switching currents and manufacturing method for the same
03/31/2011DE102009028744A1 Verfahren zur Herstellung einer elektrischen Verbindung zwischen Leiterplatten A method for making an electrical connection between printed circuit boards
03/31/2011DE102008053610B4 Verfahren zum beidseitigen Polieren einer Halbleiterscheibe A method for double-sided polishing of a semiconductor wafer
03/31/2011DE102007049103B4 System zum Bestimmen der lagerichtigen Position einer Maske in einer Ablage einer Koordinaten-Messmaschine System for determining the position correct position of a mask in a filing of a coordinate measuring machine
03/31/2011DE102006053956B4 Verfahren zur Herstellung einer Halbleitereinrichtung, Halbleitereinrichtung, insbesondere Halbleiterspeichereinrichtung A process for producing a semiconductor device, semiconductor device, in particular semiconductor memory device
03/31/2011DE102005039564B4 Verfahren zum Herstellen eines Halbleiterbauteils A method of manufacturing a semiconductor device
03/31/2011DE102005029313B4 Verfahren zur Herstellung eines Halbleiterbauelementes und Halbleiterbauelement A process for producing a semiconductor device and semiconductor device
03/31/2011DE102005004827B4 Wafer-Unterteilungsverfahren Wafer dividing method
03/31/2011DE102004059439B4 Methode zur Entfernung eines Resistmusters Method of removing a resist pattern
03/31/2011DE10111471B4 Vorrichtung und Verfahren zum Aufnehmen und Abgeben von Substraten Apparatus and method for receiving and discharging of substrates
03/31/2011DE10046668B4 Elektrische Lastansteuerungsschaltung mit Schutzeinrichtung Electrical load drive circuit with protection device
03/31/2011CA2775324A1 Passivated nanoparticles
03/31/2011CA2763055A1 Silicon carbide ingot, silicon carbide substrate, manufacturing method thereof, crucible, and semiconductor substrate
03/30/2011EP2302686A2 Guard ring for semiconductor devices
03/30/2011EP2302684A2 Power MOS device
03/30/2011EP2302681A1 Improved semiconductor sensor structures with reduced dislocation defect densities and related methods for the same
03/30/2011EP2302680A2 Rear illuminated image sensor and manufacturing method for same
03/30/2011EP2302677A1 Method for manufacturing a semiconductor device
03/30/2011EP2302672A2 Semiconductor device with electrode pad and method for manufacturing same
03/30/2011EP2302671A1 Bonding process and layer transfer method
03/30/2011EP2302670A1 Place station for a pick-and-place machine
03/30/2011EP2302669A1 Encapsulation material for integrated circuits containing carbon nanotubes
03/30/2011EP2302668A2 Semiconductor device having tipless epitaxial source/drain regions
03/30/2011EP2302667A1 Insulating film for semiconductor device, process and apparatus for producing insulating film for semiconductor device, semiconductor device, and process for producing the semiconductor device
03/30/2011EP2302666A2 Process of planarisation by ultrasounds of a substrate whose surface was released by fracture of a weakened buried layer
03/30/2011EP2302665A1 Pendeoepitaxial growth of gallium nitride layers on sapphire substrates
03/30/2011EP2302663A2 Method of forming MIM capacitor
03/30/2011EP2302539A1 Semiconductor integrated circuit, method of manufacturing semiconductor integrated circuit, charge pump circuit, layout designing apparatus, and layout designing program
03/30/2011EP2302453A2 Photomask blank and photomask
03/30/2011EP2302452A2 Photomask blank and photomask
03/30/2011EP2302112A1 Algan bulk crystal manufacturing method and algan substrate manufacturing method
03/30/2011EP2302110A1 Method of manufacturing a si(1-v-w-x)cwalxnv substrate, method of manufacturing an epitaxial wafer, si(1-v-w-x)cwalxnv substrate, and epitaxial wafer