Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
03/2012
03/01/2012US20120049275 Semiconductor device and method of manufacturing the same
03/01/2012US20120049274 Trench Structures in Direct Contact
03/01/2012US20120049270 Method for Forming a Semiconductor Device, and a Semiconductor with an Integrated Poly-Diode
03/01/2012US20120049267 Semiconductor devices and method of manufacturing the same
03/01/2012US20120049266 Semiconductor devices and methods of manufacturing the same
03/01/2012US20120049264 NAND Memory Constructions and Methods of Forming NAND Memory Constructions
03/01/2012US20120049263 Semiconductor device having extra capacitor structure and manufacturing method thereof
03/01/2012US20120049262 A dram cell structure with extended trench and a manufacturing method thereof
03/01/2012US20120049260 Method for forming capacitor and semiconductor device using the same
03/01/2012US20120049258 Semiconductor memory device and manufacturing method of semiconductor memory device
03/01/2012US20120049249 Semiconductor structure and method for fabricating the same
03/01/2012US20120049247 Modified profile gate structure for semiconductor device and methods of forming thereof
03/01/2012US20120049245 Memory array with an air gap between memory cells and the formation thereof
03/01/2012US20120049244 Semiconductor device and method of manufacturing the same, and power supply apparatus
03/01/2012US20120049239 Graphene transparent electrode, graphene light emitting diode, and method of fabricating the graphene light emitting diode
03/01/2012US20120049203 Multi-dimensional solid state lighting device array system and associated methods and structures
03/01/2012US20120049202 Semiconductor device and method of manufacturing semiconductor device
03/01/2012US20120049201 Semiconductor device and manufacturing method of the same
03/01/2012US20120049200 Systems and methods for preparing freestanding films using laser-assisted chemical etch, and freestanding films formed using same
03/01/2012US20120049199 Method of forming polycrystalline silicon layer, method of manufacturing thin film transistor including the method, thin-film transistor manufactured by using the method of manufacturing thin-film transistor, and organic light-emitting display device including the thin-film transistor
03/01/2012US20120049197 Pixel structure and manufacturing method thereof
03/01/2012US20120049196 Replacement metal gate transistors with reduced gate oxide leakage
03/01/2012US20120049195 Transistor with etching stop layer and manufacturing method thereof
03/01/2012US20120049194 Increased Charge Carrier Mobility in Transistors by Providing a Strain-Inducing Threshold Adjusting Semiconductor Material in the Channel
03/01/2012US20120049190 Semiconductor device and manufacturing method thereof
03/01/2012US20120049189 Semiconductor device and method of manufacturing the same
03/01/2012US20120049188 Method of forming polycrystalline silicon layer and thin film transistor and organic light emitting device including the polycrystalline silicon layer
03/01/2012US20120049183 Electronic device, manufacturing method of electronic device, and sputtering target
03/01/2012US20120049180 Compound semiconductor device and method of manufacturing the same
03/01/2012US20120049171 Electronic device and method of manufacturing the same, and semiconductor device and method of manufacturing the same
03/01/2012US20120049161 Formation of a vicinal semiconductor-carbon alloy surface and a graphene layer thereupon
03/01/2012US20120049153 Solid state lighting devices with current routing and associated methods of manufacturing
03/01/2012US20120049152 Solid state lighting devices with low contact resistance and methods of manufacturing
03/01/2012US20120049151 Light-emitting devices with two-dimensional composition-fluctuation active-region and method for fabricating the same
03/01/2012US20120049150 Semiconductor device, manufacturing method therefor, and solar cell
03/01/2012US20120049147 Resistance-variable memory device and a production method therefor
03/01/2012US20120049146 Memory Cells and Methods of Forming Memory Cells
03/01/2012US20120049144 Post-Fabrication Self-Aligned Initialization of Integrated Devices
03/01/2012US20120049066 Infrared sensor and manufacturing method thereof
03/01/2012US20120049063 Sample surface inspection apparatus and method
03/01/2012US20120048906 Substrate cutting device and method
03/01/2012US20120048830 Abrasive Liquid For Metal and Method for Polishing
03/01/2012US20120048727 Semiconductor wafer holder and electroplating system for plating a semiconductor wafer
03/01/2012US20120048596 Structure And Process For Electrical Interconnect And Thermal Management
03/01/2012US20120048198 Vapor phase growth apparatus
03/01/2012US20120048193 Lithographic apparatus and device manufacturing method
03/01/2012US20120048185 Apparatus for forming asymmetrical encapsulant beads on wire bonds
03/01/2012DE19758977B4 Verfahren zur Herstellung eines Halbleiterbauelements A process for producing a semiconductor device
03/01/2012DE19727530B4 Herstellungsverfahren für ein Halbleiterbauelement mit einer SOI-Struktur und entsprechendes Halbleiterbauelement Manufacturing method of a semiconductor device with a SOI structure semiconductor device and corresponding
03/01/2012DE112008003787T5 Halbleitervorrichtung Semiconductor device
03/01/2012DE112004002491B4 Verfahren zur Herstellung einer kontaktlosen Speicheranordnung A process for preparing a non-contact memory device
03/01/2012DE10236217B4 Verfahren zur Herstellung einer Speicherzelle, Verfahren zur Herstellung einer vergrabenen Brücke (buried strap) für einen vertikalen DRAM ohne TTO Abscheidung sowie Verfahren zur Bearbeitung eines Halbleiterbauelements A method for fabricating a memory cell, method of manufacturing a buried strap (buried strap) for a vertical DRAM without TTO deposition and method for processing a semiconductor device
03/01/2012DE10234178B4 Verfahren zur Herstellung eines OLED-Bauelements mit einem verstärkten Substrat A process for preparing an OLED device with a reinforced substrate
03/01/2012DE102011080841A1 Verfahren zur Fertigung einer Siliciumcarbid-Halbleitervorrichtung A method for manufacturing a silicon carbide semiconductor device
03/01/2012DE102011053147A1 Grabenstrukturen in direktem kontakt Grave structures in direct contact
03/01/2012DE102011052731A1 Verfahren zum Bilden einer Halbleitervorrichtung und Halbleitervorrichtung mit einer integrierten Polydiode A method of forming a semiconductor device and semiconductor device comprising an integrated Polydiode
03/01/2012DE102011051079A1 Verfahren zum Steuern eines Prozesses und Prozesssteuersystem A method for controlling a process and the process control system
03/01/2012DE102011050958A1 Hochspannungshalbleiterbauelemente High voltage semiconductor devices
03/01/2012DE102010040071A1 Wiederherstellung von Oberflächeneigenschaften empfindlicher Dielektrika mit kleinem ε in Mikrostrukturbauelementen unter Anwendung einer in-situ-Oberflächenmodifizierung Recovery of surface properties of sensitive dielectrics with small ε in microstructure devices using an in-situ surface modification
03/01/2012DE102010040068A1 Bewertung der thermisch-mechanischen Eigenschaften komplexer Halbleiterbauelemente durch integrierte Heizsysteme Evaluation of the thermal-mechanical properties of complex semiconductor devices with integrated heating systems
03/01/2012DE102010040066A1 Gateelektroden eines Halbleiterbauelements, die durch eine Hartmaske und Doppelbelichtung in Verbindung mit einem Größenreduzierungsabstandshalter hergestellt sind Gate electrodes of a semiconductor device made by a hard mask and double exposure in connection with a reduction in size spacer
03/01/2012DE102010040065A1 Verspannungsreduktion in einem Chipgehäuse unter Anwendung eines Chip-Gehäuse-Verbindungsschemas bei geringer Temperatur Stress reduction in a chip package using a chip package interconnection scheme at low temperature
03/01/2012DE102010040064A1 Verringerte Schwellwertspannungs-Breitenabhängigkeit in Transistoren, die Metallgateelektrodenstrukturen mit großem ε aufweisen Have reduced threshold voltage width dependence in transistors, the metal gate electrode structures with large ε
03/01/2012DE102010040063A1 Verfahren zur Herstellung bleifreier Lotkugeln mit einer stabilen Oxidschicht auf der Grundlage eines Plasmaprozesses A process for preparing lead-free solder balls having a stable oxide layer on the basis of a plasma process
03/01/2012DE102010040062A1 Eine Substratzerteilungstechnik für das Separieren von Halbleiterchips mit geringerem Flächenverbrauch A Substratzerteilungstechnik for the separation of semiconductor chips with a lower surface of consumption
03/01/2012DE102010040061A1 Erhöhte Ladungsträgerbeweglichkeit in p-Kanal Transistoren durch Vorsehen eines verspannungsinduzierenden schwellwerteinstellenden Halbleitermaterials im Kanal Increased charge carrier mobility in p-channel transistors by providing a stress-inducing schwellwerteinstellenden semiconductor material in the channel
03/01/2012DE102010040060A1 Oxidabscheidung unter Anwendung eines Doppelbeschichtungsverfahrens zur Verringerung der Strukturdichtenabhängigkeit in komplexen Halbleiterbauelementen Oxide deposition using a double coating procedure to reduce the structural sealant dependence in complex semiconductor devices
03/01/2012DE102010040059A1 Strip or sheet-shaped substrate e.g. metal strip, temperature controlling method for use during manufacturing e.g. organic LED, involves arranging carrier in heat transfer region between control device and substrate, and moving carrier
03/01/2012DE102010040058A1 Polysiliziumwiderstände, die in einem Halbleiterbauelement mit Metallgateelektrodenstrukturen mit großem ε hergestellt sind Polysilicon resistors which are produced in a semiconductor device with metal gate electrode structures with large ε
03/01/2012DE102010039729A1 Elektrische Schaltung mit zu kühlender Schaltungskomponente, Kühlkörper und Verfahren zur abgedichteten Einbettung einer elektrischen Schaltung Electrical circuit for cooling circuit component, heat sink and method for embedding a sealed electrical circuit
03/01/2012DE102010039684A1 Examination method of raw piezoelectric actuator, involves evaluating continuity of ring current magnetic field induced in inner electrode of piezoelectric actuator that is provided with piezoelectric elements
03/01/2012DE102010037321A1 Formation of doped surface of plate-shaped wafer or semiconductor device involves applying phosphorus dopant source, forming primary doped surface, removing dopant source and crystallized precipitate, and forming secondary doped surface
03/01/2012DE102010036217A1 Method for manufacturing hermetic housing for microsystem e.g. microelectromechanical system (MEMS), involves placing base with lid in protective atmosphere, and forming adhesive joint between base and lid
03/01/2012DE102010035961A1 Method for determining characteristic of photovoltaic device with e.g. thin film solar cell, involves measuring characteristics of reference cells and solar cells with sun simulator for determining characteristics of solar cells
03/01/2012DE102010035296A1 Planar high-voltage transistor i.e. laterally diffused metal oxide semiconductor transistor, for integrated smart power switching circuit, has oxide bar whose length on region of interconnect structure is larger than width of structure
03/01/2012DE102007063017B4 Substrathalterung für Gasdiffusionsöfen Substrate holder for Gasdiffusionsöfen
03/01/2012DE102005041321B4 Grabenstrukturhalbleitereinrichtungen Grave structure semiconductor devices
03/01/2012DE102004062202B4 Verfahren zum Herstellen einer Gate-Elektrode eines ersten Feldeffekttransistors und einer Gate-Elektrode eines zweiten Feldeffekttransistors und Verfahren zum Herstellen eines integrierten Schaltkreises A method of manufacturing a gate electrode of a first field effect transistor and a gate electrode of a second field effect transistor and method of fabricating an integrated circuit
03/01/2012DE102004030174B4 Magnetischer Direktzugriffsspeicher The magnetic random access memory
03/01/2012DE10053463B4 Verfahren zur Herstellung eines Halbleitersubstrats A process for producing a semiconductor substrate
02/2012
02/29/2012EP2423957A1 Pallet for accommodating thermal gradients arising during processing
02/29/2012EP2423956A2 Method of analyzing iron concentration of boron-doped p-type silicon wafer and method of manufacturing silicon wafer
02/29/2012EP2423955A1 Method for mounting semiconductor package component, and structure having semiconductor package component mounted therein
02/29/2012EP2423954A1 Manufacturing method of semiconductor device
02/29/2012EP2423953A1 Method of manufacturing a semiconductor device
02/29/2012EP2423952A2 Patterning a gate stack of a non-volatile memory (nvm) with simultaneous etch in non-nvm area
02/29/2012EP2423951A2 Antiphase domain boundary-free III-V compound semiconductor material on semiconductor substrate and method for manufacturing thereof
02/29/2012EP2423950A2 Via-less thin film resistor with a dielectric cap and manufacturing method thereof
02/29/2012EP2423949A2 Multi-layer via-less thin film resistor and manufacturing method therefor
02/29/2012EP2423947A2 Electronic device including a feature in a trench
02/29/2012EP2423946A1 Production of a p-conducting ZnO semiconductive layer
02/29/2012EP2423747A1 Pellicle for lithography and manufacturing method thereof
02/29/2012EP2423676A1 Probe apparatus
02/29/2012EP2423356A1 Process for producing indium-phosphorus substrate, process for producing epitaxial wafer, indium-phosphorus substrate, and epitaxial wafer
02/29/2012EP2423264A1 Phthalocyanine nanowires, ink composition and electronic element each containing same, and method for producing phthalocyanine nanowires
02/29/2012EP2422916A1 Laser machining method
02/29/2012EP2422914A2 Capillary and ultrasonic transducer for ultrasonic bonding with adapted flexure rigidity
02/29/2012EP2422366A1 Three dimensional integrated circuit integration using dielectric bonding first and through via formation last
02/29/2012EP2422365A1 Microtechnology proven for transferring at least one layer
02/29/2012EP2422364A1 Device for aligning and pre-attaching a wafer
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