Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
05/2012
05/16/2012CN102456629A 存储器件的形成方法 The method of forming a memory device
05/16/2012CN102456628A Method of manufacturing strained source/drain structures
05/16/2012CN102456627A 半导体器件的制作方法 The method of making a semiconductor device
05/16/2012CN102456626A 基于双应力薄膜技术的半导体器件的制作方法 Production method based on double stress of thin film technology semiconductor devices
05/16/2012CN102456625A 异形晶片的激光切割制造方法 Shaped laser cutting method of manufacturing the wafer
05/16/2012CN102456624A 有机电致发光显示器的阵列基板及其制造方法 An array substrate and manufacturing method of an organic electroluminescent display
05/16/2012CN102456623A 有机电致发光设备的阵列基板及其制造方法 An array substrate and manufacturing method of an organic electroluminescent device
05/16/2012CN102456622A 一种沟道式mos势垒肖特基沟槽制备方法 One kind of a trench Schottky barrier trench mos preparation
05/16/2012CN102456621A 半导体器件结构和制作该半导体器件结构的方法 The semiconductor device structure and method of making the semiconductor device structure
05/16/2012CN102456620A Array substrate and manufacturing method thereof
05/16/2012CN102456619A 阵列基板及其制造方法和液晶显示器 Array substrate and manufacturing method thereof, and a liquid crystal display
05/16/2012CN102456618A 一种利用上掩膜实现高性能铜互连的方法 A use of the mask to achieve high performance copper interconnect methods
05/16/2012CN102456617A 形成自对准局部互连的方法和由此形成的结构 Forming self-aligned local interconnection methods and structures formed thereby
05/16/2012CN102456616A Method of manufacturing airbridge
05/16/2012CN102456615A 一种去除金属层冗余金属填充的制造工艺 A redundant metal layer manufacturing process to remove metal-filled
05/16/2012CN102456614A Realization method for metal source-substrate passage in radio-frequency LDMOS (laterally-diffused metal oxide semiconductor) apparatus
05/16/2012CN102456613A 一种半导体结构及其制造方法 A semiconductor structure and its manufacturing method
05/16/2012CN102456612A 半导体集成电感的制作方法及结构 Production methods and structure of the semiconductor integrated inductor
05/16/2012CN102456611A 控制背孔剖面形状的方法 Back hole cross-sectional shape of a method of controlling
05/16/2012CN102456610A 控制背孔剖面形状的方法 Back hole cross-sectional shape of a method of controlling
05/16/2012CN102456609A 一种利用侧向边墙技术提高sti凹陷区特性的方法 A use of technology to improve the lateral side wall sti depression characteristic method
05/16/2012CN102456608A 隔离结构的制备方法及其半导体元件 Preparation isolation structure and the semiconductor elements
05/16/2012CN102456607A 浅沟槽隔离结构的制作方法 The method of making a shallow trench isolation structure
05/16/2012CN102456606A 浅沟槽隔离结构形成方法 The method of forming a shallow trench isolation structure
05/16/2012CN102456605A Self-aligned body fully isolated device
05/16/2012CN102456604A 卡盘及其制造方法、具有该卡盘的晶片处理设备 Chuck and its manufacturing method, the chuck having a wafer processing apparatus
05/16/2012CN102456603A Semiconductor device manufacturing method and manufacturing apparatus
05/16/2012CN102456602A Inspection apparatus and positioning method for substrate
05/16/2012CN102456601A 保持部件形状判定装置和方法、基板处理装置和存储介质 Holding member shape determination device and method, a substrate processing apparatus and the storage medium
05/16/2012CN102456600A 晶片搬送机构 Wafer transporting mechanism
05/16/2012CN102456599A 支撑单元及具有支撑单元的衬底处理设备 Supporting unit and the substrate processing apparatus having a support unit
05/16/2012CN102456598A 粘合装置和粘合方法 Apparatus and method for bonding adhesive
05/16/2012CN102456597A 基板处理设备以及拆分和组装所述基板处理设备的方法 The substrate processing apparatus and method of splitting and assembling the substrate processing apparatus
05/16/2012CN102456596A 衬底处理装置、衬底处理装置的温度控制方法及衬底处理装置的加热方法 The method of heating the substrate processing apparatus, the temperature control method of a substrate processing apparatus and a substrate processing apparatus
05/16/2012CN102456595A 真空传输制程设备及方法 Vacuum transfer process equipment and methods
05/16/2012CN102456594A 去边宽度检测方法及装置 To edge width detection method and device
05/16/2012CN102456593A 一种测量籽硅层厚度的方法 A silicon seed layer thickness measurement method
05/16/2012CN102456592A Method and device for testing characteristics of thin film transistor on array substrate
05/16/2012CN102456591A 测试样片及其使用方法 Test Sample and method of use
05/16/2012CN102456590A Bonding apparatus and bonding method
05/16/2012CN102456589A Bonding apparatus
05/16/2012CN102456588A Wire bonding apparatus and method using the same
05/16/2012CN102456587A Process for realising a connecting structure
05/16/2012CN102456586A Bonding pad planarization process for improving packaging feasibility of bump structure
05/16/2012CN102456585A 一种用于窄间距植球的焊球转移工具和转移方法 Solder transfer tool for narrow pitch bumping and transfer methods
05/16/2012CN102456584A Semiconductor device and method of forming pentrable film encapsulant around semiconductor die and interconnect structure
05/16/2012CN102456583A 半导体芯片的压缩成形方法及压缩成形模具 Semiconductor chip compression molding method and the compression molding die
05/16/2012CN102456582A Technology for manufacturing molded lead frame
05/16/2012CN102456581A 薄膜晶体管及其制造方法 A thin film transistor and manufacturing method thereof
05/16/2012CN102456580A Semiconductor device and method of fabricating the same
05/16/2012CN102456579A 具有局部的极薄绝缘体上硅沟道区的半导体器件 A semiconductor device having a silicon on insulator partial thin channel region
05/16/2012CN102456578A High-voltage transistor and manufacturing method thereof
05/16/2012CN102456577A 应力隔离沟槽半导体器件的形成方法 Stress isolation method for forming a semiconductor device trenches
05/16/2012CN102456576A Stress insulating groove semiconductor device and forming method thereof
05/16/2012CN102456575A 超级结结构的半导体器件的制作方法及器件结构 The method of making a semiconductor device of the super junction structure and device structure
05/16/2012CN102456574A 一种自对准金属硅化物的沟槽型半导体器件及制造方法 A self-aligned trench-type semiconductor device and method of manufacturing metal silicide
05/16/2012CN102456573A 薄膜晶体管的制造方法 The method of manufacturing a thin film transistor
05/16/2012CN102456572A 用于制作包含应力层的半导体器件结构的方法 The method of making a semiconductor device comprising the stress layer structure for
05/16/2012CN102456571A Method for manufacturing doped polycrystalline silicon of emitting electrode
05/16/2012CN102456570A 一种肖特基二极管的制造方法 One kind of Schottky diode manufacturing method
05/16/2012CN102456569A 一种栅极刻蚀的方法 One kind of gate etching method
05/16/2012CN102456568A 一种淀积掺氮碳化硅薄膜的方法 A nitrogen-doped silicon carbide film deposition method
05/16/2012CN102456567A 接触孔的等离子体干法刻蚀方法 Contact hole plasma dry etching method
05/16/2012CN102456566A 一种低温二氧化硅的处理方法 A low-temperature processing method silica
05/16/2012CN102456565A 一种预防在双应力氮化硅工艺中光阻失效的方法 A dual-stress silicon nitride photoresist process failure prevention
05/16/2012CN102456564A 用于刻蚀腔的变压耦合式等离子体窗及包括其的刻蚀腔 Windows and transformer coupled plasma etch chamber including for etch chamber
05/16/2012CN102456563A UV exposure method for reducing residue in de-taping process
05/16/2012CN102456562A 制备多厚度的多晶硅栅极的方法 Prepared more than the thickness of the polysilicon gate
05/16/2012CN102456561A Forming method of thick gate oxide layer at bottom of groove in groove-type power device
05/16/2012CN102456560A 生成镍合金自对准硅化物的方法 Generating salicide method nickel alloy
05/16/2012CN102456559A 形成用于接触插塞的金属硅化物的方法 Methods for contacting the plug metal silicide formation
05/16/2012CN102456558A 一种高介电常数介质-金属栅极的制造方法 A high dielectric constant - manufacturing a metal gate
05/16/2012CN102456557A 金属硅化物的形成方法 The method of forming a metal silicide
05/16/2012CN102456556A 金属硅化物的形成方法 The method of forming a metal silicide
05/16/2012CN102456555A 一种激光退火扫描方法 A laser annealing scanning method
05/16/2012CN102456554A 一种减小mos io器件gidl效应的方法 A method for reducing the effect of mos io devices gidl method
05/16/2012CN102456553A 一种掺杂阱的制作方法 A method of making the well doping
05/16/2012CN102456552A 微晶硅膜的制造方法及半导体装置的制造方法 A manufacturing method of microcrystalline silicon film and a semiconductor device
05/16/2012CN102456551A 外延生长方法 Epitaxial growth
05/16/2012CN102456550A 利用单图案化隔离件技术的双图案化技术 Using a single spacer patterning technology double patterning technique
05/16/2012CN102456549A 磷化铟晶片及其表面清洗方法 InP wafer and surface cleaning method
05/16/2012CN102456548A 具有氮化镓层的多层结构基板及其制法 Gallium nitride layer having a multilayer structure of the substrate preparation method
05/16/2012CN102456547A 纳米微结构的制造方法 Manufacturing method nanostructures
05/16/2012CN102456546A 对半导体衬底凹陷区进行等离子体放电预处理的方法 Recessed area of ​​the semiconductor substrate plasma discharge pretreatment method
05/16/2012CN102456545A 图形化衬底的刻蚀方法 Etching the patterned substrate
05/16/2012CN102456544A 芯片信息去除方法 Chip Information Removal Methods
05/16/2012CN102456543A 适用于批处理式离子注入机的陪片循环再生方法 Suitable for batch-type ion implanter accompany piece recycling method
05/16/2012CN102456542A 半导体制造工艺 The semiconductor manufacturing process
05/16/2012CN102456541A 锗硅监控片的制备方法及采用该片进行监控的方法 Preparation SiGe monitor sheet and method for monitoring the use of the sheet
05/16/2012CN102456540A 应用于外延工艺中的光刻套刻标记的制备方法 Applied to the preparation of epitaxial process of lithography overlay mark
05/16/2012CN102456539A Preparation method for silicon germanium (SiGe) monitoring chip and monitoring method adopting chip
05/16/2012CN102456538A 含未钝化金属层结构的塑封器件的开封方法 No plastic devices containing metal passivation layer structure of Kaifeng method
05/16/2012CN102456537A 面向集束半导体设备的反应腔和传片腔功能调用方法 Reaction chamber and the chamber function call transfer sheet method for bundling semiconductor devices
05/16/2012CN102456536A 一种打标机的料条高精度定位系统 One kind of material strip marking machine high-precision positioning system
05/16/2012CN102456532A 基板处理装置及方法 Substrate processing apparatus and method
05/16/2012CN102456083A Process data analyzing method and system
05/16/2012CN102455713A 传输腔室的压强控制方法、装置及等离子体设备 Transfer chamber pressure control method, apparatus and plasma equipment
05/16/2012CN102455599A Resist pattern improving material, method for forming resist pattern, and method for producing semiconductor device
05/16/2012CN102455596A Photoresist and lift off method as well as manufacturing method of TFT (Thin Film Transistor) array substrate
05/16/2012CN102455593A Method for forming photoresist pattern and manufacturing method of array substrate