Patents for H01F 10 - Thin magnetic films, e.g. of one-domain structure (7,026)
02/2005
02/16/2005CN1582480A Control device for reversing the direction of magnetisation without an external magnetic field
02/16/2005CN1581298A Thin film magnetic head including NiPRe alloy gap layer
02/16/2005CN1189899C Method for making magnetic garnet monocrystal film and mangetic garnet monocrystal film with ununiform thickness
02/16/2005CN1189868C Magnetic recording medium using antiferromagnet coupled ferromagnetic film as recording layer
02/15/2005US6856494 Spin-valve type thin film magnetic element having bias layers and ferromagnetic layers
02/15/2005US6855240 CoFe alloy film and process of making same
02/10/2005WO2005013385A2 Method for manufacturing magnetic field detection devices and devices threfrom
02/10/2005US20050031909 Magnetic thin film media with a pre-seed layer of CrTi
02/10/2005US20050031908 Reduced dust adhesion; fine particles of copper, gold ferromagnetic alloy
02/10/2005US20050030674 Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems
02/10/2005US20050030137 Artificial magnetic conductor surfaces loaded with ferrite-based artificial magnetic materials
02/10/2005DE10332826A1 Manipulation der magnetischen Eigenschaften von Halbleitern und magnetoelektronische Bauelemente Manipulation of the magnetic properties of semiconductors and magneto-electronic components
02/09/2005EP1505610A2 Magnetoresistive element, magnetic head and magnetic recording/reproducing apparatus
02/09/2005EP1505609A1 Soft magnetic material of high saturation magnetic flux density
02/09/2005EP1505575A1 Magnetic recording medium
02/09/2005CN1577860A Method of manufacture of a magneto-resistive device
02/09/2005CN1577845A Magnetic memory device and method of manufacturing the same
02/09/2005CN1577619A 磁存储装置与磁基片 A magnetic storage device and the magnetic substrate
02/09/2005CN1577618A 磁存储装置与磁基片 A magnetic storage device and the magnetic substrate
02/09/2005CN1577617A 磁存储装置与磁基片 A magnetic storage device and the magnetic substrate
02/09/2005CN1577505A Magnetic recording medium, magnetic storage apparatus and recording method
02/09/2005CN1577498A Thin-film magnetic head, head gimbal assembly, and hard disk drive
02/09/2005CN1577496A Thin film magnetic head, head gimbal assembly, and hard disk drive
02/09/2005CN1577495A Magnetoresistive element, magnetic head and magnetic recording/reproducing apparatus
02/08/2005US6853580 Magnetoresistive element and MRAM using the same
02/08/2005US6853521 Seed layer is formed with a Cr layer in which the direction of a crystal face is oriented in a different direction from that of an equivalent crystal face in another crystal grain; wettability improved
02/08/2005US6853520 Magnetoresistance effect element
02/08/2005US6853519 Magnetic head having high conductivity lead structures seeded by epitaxially matched seed layer
02/08/2005US6852550 MRAM sense layer area control
02/08/2005US6852430 Magnetic thin film media with a pre-seed layer of CrTi
02/08/2005US6852398 Perpendicular-magnetic recording media and magnetic recording apparatus
02/03/2005WO2005011010A2 Component with a structure element having magnetic properties and method
02/03/2005WO2005009653A1 Aggregate of magnetic alloy particle
02/03/2005WO2004107370A3 Nanocrystalline layers and improved mram tunnel junctions
02/03/2005US20050025999 Low resistance magnetic tunnel junction structure
02/03/2005US20050024793 Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film
02/03/2005US20050024792 CPP GMR read head
02/03/2005US20050024791 Ferromagnetic tunnel junciton element exhibiting high magnetoresistivity at finite voltage and tunnel magnetoresistive head provided therewith, magnetic head slider, and magnetic disk drive
02/03/2005US20050024788 Magnetic element, magnetic information reproducing head, and magnetic information reproducing apparatus
02/03/2005US20050024786 Method and apparatus for enhancing thermal stability, improving biasing and reducing damage from electrostatic discharge in self-pinned abutted junction heads having a first self-pinned layer extending under the hard bias layers
02/03/2005US20050024050 Micro fluxgate sensor and method of manufacturing the same
02/03/2005US20050023519 Square-law detector based on spin injection and nanowires
02/03/2005US20050022910 [Tx M1-x]y [Z]1-y where T is one or both of Fe and Co; M is one or both of Pt and Pd; Z is Ag, Cu, Bi, Sb, Pb and/or Sn; X represents 0.3-0.7, and Y represents 0.7-1.0; can be dispersed in a flow-enabling state with the particles in positions separated at prescribed spacing
02/02/2005EP1503388A2 Magnetic metal particle aggregate and method of producing the same
02/02/2005CN1573946A Magnetic device with improved antiferromagnetically coupling film
02/02/2005CN1573945A Magnetic recording disk with improved antiferromagnetically coupling film
02/01/2005US6850433 Magnetic memory device and method
02/01/2005US6849465 Method of patterning a magnetic memory cell bottom electrode before magnetic stack deposition
02/01/2005US6849464 Method of fabricating a multilayer dielectric tunnel barrier structure
01/2005
01/27/2005WO2005008799A1 Ccp magnetoresistance element, method for manufacturing same, magnetic head and magnetic storage
01/27/2005WO2004066322A3 Antenna core and method for producing an antenna core
01/27/2005WO2004064048A3 Magnetic recording medium, method of manufacturing therefor, and magnetic read/write apparatus
01/27/2005US20050020060 Process for producing metal thin films by ALD
01/27/2005US20050020011 Magnetic memory device and method of manufacturing the same
01/27/2005US20050019610 Spin tunnel magnetoresistive effect film and element, magnetoresistive sensor using same, magnetic apparatus, and method for manufacturing same
01/27/2005US20050018367 Thin film magnetic head, head gimbal assembly, and hard disk drive
01/27/2005US20050018366 Magnetoresistive device and thin-film magnetic head
01/27/2005US20050017314 Spin valve transistor with self-pinned antiparallel pinned layer structure
01/25/2005US6847545 Magnetic thin film element, memory element using the same, and method for recording and reproducing using the memory element
01/25/2005US6847508 Spin valve thin film magnetic element and thin film magnetic head
01/25/2005US6847072 Low switching field magnetic element
01/25/2005US6846985 Magnetically shielded assembly
01/25/2005US6846581 Magnetic recording layer and a soft magnetic layer and adapted for a high-density magnetic recording
01/25/2005US6846344 Alloy articles having magnetism less than pure nickel; superconductivity
01/20/2005WO2005006450A1 Oblique deposition to induce magnetic anisotropy for mram cells
01/20/2005US20050014295 Method of manufacture of a magneto-resistive device
01/20/2005US20050014028 Ion exchanging layered structure
01/20/2005US20050013063 Thin-film magnetic head, head gimbal assembly, and hard disk drive
01/20/2005US20050012127 Via AP switching
01/20/2005US20050011590 Soft magnetic film having improved saturated magnetic flux density, magnetic head using the same, and manufacturing method therefore
01/20/2005US20050011308 Fe-Co-B alloy target and its production method, and soft magnetic film produced by using such target, and magnetic recording medium and TMR device
01/20/2005DE10325757A1 Verfahren zur Herstellung von magnetischen Halbleitern mit günstigen ferromagnetischen Eigenschaften A process for producing magnetic semiconductors ferromagnetic properties with favorable
01/19/2005EP1498919A2 Manufacturing a magnetic cell
01/19/2005EP1498879A1 Magnetic recording medium, magnetic storage apparatus and recording method
01/19/2005EP1417690B1 Layer system having an increased magnetoresistive effect and use of the same
01/19/2005CN1185630C Magnetic memory device
01/18/2005US6844999 Boron doped CoFe for GMR free layer
01/18/2005US6844605 Magnetic memory using perpendicular magnetization film
01/18/2005US6844492 Magnetically shielded conductor
01/13/2005US20050009211 Tunneling magnetoresistive (TMR) sensor having a barrier layer made of magnesium-oxide (Mg-O)
01/13/2005US20050007694 Magnetic field sensor utilizing anomalous hall effect magnetic film
01/13/2005US20050006682 Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier, and methods for forming the same
01/11/2005US6842368 High output nonvolatile magnetic memory
01/11/2005US6842317 Magnetoresistive element, magnetic head, magnetic memory and magnetic recording apparatus using the same
01/11/2005US6841395 Method of forming a barrier layer of a tunneling magnetoresistive sensor
01/11/2005US6841259 Magnetic thin film, production method therefor, evaluation method therefor and magnetic head using it, magnetic recording device and magnetic device
01/11/2005US6841224 Method of patterning magnetic products using chemical reactions
01/06/2005WO2005002308A2 Pieces for passive electronic components and method for production thereof
01/06/2005US20050003234 Magnetic film for magnetic head
01/06/2005US20050002228 Magnetic device with magnetic tunnel junction, memory array and read/write methods using same
01/06/2005US20050002126 CPP spin-valve element
01/06/2005US20050000600 Ultra high saturation moment soft magnetic thin film
01/06/2005CA2774224A1 Method for producing parts for passive electronic components and parts thus obtained
01/06/2005CA2529899A1 Parts for passive electronic components and method for production thereof
01/05/2005EP1494295A1 Magnetoresistance effect element and magnetic memory device
01/04/2005US6839273 Magnetic switching device and magnetic memory using the same
01/04/2005US6839206 Ferromagnetic double tunnel junction element with asymmetric energy band
01/04/2005US6838740 Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
01/04/2005US6838195 Reducing the jitter noise and increasing the readback signal for magnetic storage medium by adding interstitial, smaller-sized particles into the larger-sized particle array to fill the void holes; reduced roughness; high density recording
12/2004
12/30/2004US20040265636 Iron-ruthenium (fe-ru) alloy antiferromagnetic bonding layer
1 ... 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 ... 71