Patents for H01F 10 - Thin magnetic films, e.g. of one-domain structure (7,026)
12/2004
12/30/2004US20040265617 Disk substrate for a perpendicular magnetic recording medium and perpendicular magnetic recording disk
12/30/2004US20040264066 Thin film magnetic head, head gimbal assembly, and hard disk drive
12/30/2004US20040262654 Magnetoresistive effect element and magnetic memory device
12/30/2004US20040262627 Magnetic device with improved antiferromagnetically coupling film
12/29/2004WO2004114415A1 Surface spintronics device
12/29/2004WO2004114334A2 Method of patterning a magnetic memory cell bottom electrode before magnetic stack deposition
12/29/2004WO2004093103B1 Low switching field magnetic element
12/29/2004EP1492134A2 Magnetic device with improved antiferromagnetically coupling film
12/29/2004EP1492087A2 Magnetic recording disk
12/29/2004EP1490877A2 Synthetic-ferrimagnet sense-layer for high density mram applications
12/29/2004EP1490867A1 Magnetic recording medium and magnetic storage apparatus
12/29/2004CN1558422A Magnetoresistive random access memory with high selectivity
12/29/2004CN1182552C Magnetoresistive element and the use thereof as storage element in a storage cell array
12/28/2004US6836392 Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems
12/28/2004US6835576 Magnetic thin film, a magnetic component that uses this magnetic thin film, manufacturing methods for the same, and a power conversion device
12/28/2004US6835476 Magnetic recording layer having at least two ferromagnetic films exchange coupled together antiferromagnetically across a nonferromagnetic spacer film
12/28/2004US6835464 Thin film device with perpendicular exchange bias
12/28/2004US6835423 Method of fabricating a magnetic element with insulating veils
12/23/2004US20040259362 Thin film magnetic recording media
12/23/2004US20040259274 Method of patterning a magnetic memory cell bottom electrode before magnetic stack deposition
12/23/2004US20040258959 Magnetic recording medium and method of forming thereof, and underlayer structure thereof
12/23/2004US20040258833 Method of patterning magnetic products using chemical reaction
12/23/2004US20040257861 Method of incorporating magnetic materials in a semiconductor manufacturing process
12/23/2004US20040257849 Method of reading information in a magnetic memory by a reversible resistance change in a magnetic tunnel junction
12/23/2004US20040257721 Magnetic head using magneto-resistive effect and a manufacturing method thereof
12/23/2004US20040257719 Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof
12/23/2004US20040257718 Magnetoresistive device including pinned structure
12/23/2004US20040257717 Coupled ferromagnetic systems having modified interfaces
12/23/2004US20040257192 Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel element using this thin film
12/23/2004US20040257186 Magnetic sensor utilizing magnetoresistance effect, method for driving magnetic sensor utilizing magnetoresistance effect and magnetic recording systems
12/23/2004US20040256131 Nanomagnetically shielded substrate
12/22/2004EP1489664A1 Tunneling magnetoresistance device, semiconductor junction device, magnetic memory, and semiconductor light-emitting device
12/22/2004EP1489660A1 Magnetic memory device and manufacturing method thereof
12/22/2004CN1556998A Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same
12/22/2004CN1556997A Magnetic memory with write inhibit selection and the writing method for same
12/21/2004US6834005 Shiftable magnetic shift register and method of using the same
12/21/2004US6833981 Spin valve magnetic head with three underlayers
12/21/2004US6833573 Curvature anisotropy in magnetic bits for a magnetic random access memory
12/16/2004WO2004109820A1 MAGNETIC TUNNEL JUNCTIONS INCORPORATING AMORPHOUS CoNbZr ALLOYS AND NANO-OXIDE LAYERS
12/16/2004WO2004109805A1 Minute magnetic body having annular single magnetic domain structure, manufacturing method thereof, or magnetic recording element using the same
12/16/2004WO2004109725A1 Method of manufacturing a device with a magnetic layer-structure
12/16/2004WO2004109721A1 Magnetic semiconductor components and method for the production thereof
12/16/2004US20040253437 Increased damping and/or decreased coercivity; a magnetic random access memory
12/16/2004US20040252539 Shiftable magnetic shift register and method of using the same
12/16/2004US20040252538 System and method for writing to a magnetic shift register
12/16/2004US20040252417 GMR element having pinned magnetic layers at two sides of free magnetic layer in track width direction
12/16/2004US20040252416 Novel structure/method to form bottom spin valves for ultra-high density
12/16/2004US20040251232 Method of fabricating a shiftable magnetic shift register
12/16/2004US20040250929 Method of modifying iron based glasses to increase crystallization temperature without changing melting temperature
12/16/2004US20040250651 Biaxially textured articles formed by powder metallurgy
12/15/2004EP1487006A1 Device and method for heat treatment
12/15/2004CN1180446C Method of manufacturing spin valve structure
12/14/2004US6831817 Magnetic sensor having adjusted specific resistance distribution of first magnetic layer of free magnetic layer of multi-layered ferri-structure
12/14/2004US6831543 Surface mounting type planar magnetic device and production method thereof
12/14/2004US6831314 Magnetoresistive effect element and magnetic memory device
12/14/2004US6831312 Amorphous alloys for magnetic devices
12/14/2004US6830837 Magnetic recording medium and magnetic recording apparatus
12/09/2004WO2004107405A2 Spin valves using organic spacers and spin-organic light-emitting structures using ferromagnetic electrodes
12/09/2004WO2004107370A2 Nanocrystalline layers and improved mram tunnel junctions
12/09/2004US20040249428 Magnetically shielded assembly
12/09/2004US20040247859 Magnetic recording medium
12/09/2004US20040246788 Magnetoresistive device and magnetic memory device
12/09/2004US20040246634 Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus
12/09/2004US20040246631 Spin valve magnetoresistive device with enhanced performance
12/09/2004US20040245553 Magnetoresistive effect element and magnetic memory device
12/08/2004EP1484618A2 Micro fluxgate sensor and method of manufacturing the same
12/08/2004EP1019927B1 Method for increasing the operating frequency of a magnetic circuit and corresponding magnetic circuit
12/08/2004CN1179424C Ferromagnetic tunnel junctions with enhanced magneto-resistance
12/07/2004US6829159 Magnetic device
12/07/2004US6829157 Method of controlling magnetization easy axis in ferromagnetic films using voltage, ultrahigh-density, low power, nonvolatile magnetic memory using the control method, and method of writing information on the magnetic memory
12/07/2004US6829122 Magnetic head of a magnetoresistance type having an underlying layer having a laminated structure of a tungsten-group metal layer formed on a tantalum-group metal layer
12/07/2004US6828785 Magneto-resistive effect element, magnetic sensor using magneto-resistive effect, magnetic head using magneto-resistive effect and magnetic memory
12/07/2004US6828260 Ultra-violet treatment of a tunnel barrier layer through an overlayer a tunnel junction device
12/07/2004US6828046 Magnetic recording media; heat and corrosion resistance
12/02/2004US20040241500 Nonmagnetic substrate and soft magnetic layer, seed layer formed by sputtering, recording layer containing boron having multilayer film structure comprising alternately laminated cobalt and palladium
12/02/2004US20040240125 Synthetic anti-parallel spin valve with thin AFM layer for very high density application
12/02/2004US20040240124 Thin-film magnetic head
12/02/2004US20040240123 Tunnel magnetoresistance effect device , and a portable personal device
12/02/2004US20040238072 Method for producing and magnetising a bitumen film containing magnetic powder
12/01/2004EP1481726A1 The combinatorial hydrothermal synthesis of novel materials
12/01/2004CN1551358A Magnetic random access memory including middle oxide layer made from different methods and method of manufacturing the same
12/01/2004CN1551239A Electric field pulse inductive resistance element and semiconductor using same
12/01/2004CN1551121A Magnetic recording medium, magnetic recording medium manufacturing method and magnetic recording device
12/01/2004CN1551113A Differential CPP GMR head
12/01/2004CN1551107A Magnetic read head with hard bias magnet structure
11/2004
11/30/2004US6826078 Magnetoresistive effect element and magnetic memory having the same
11/30/2004US6826023 Ferromagnetic tunnel magnetoresistive devices and magnetic head
11/30/2004US6824817 Alternating iron, platinum layers
11/30/2004US6824816 Process for producing metal thin films by ALD
11/25/2004US20040235202 Magnetoresistive element and method for producing the same, as well as magnetic head, magnetic memory and magnetic recording device using the same
11/25/2004US20040233588 Magnetic sensor, production process of the magnetic sensor and magnetic array suitable for the production process
11/25/2004US20040233585 Layer system having an increased magnetoresistive effect and use of the same
11/25/2004US20040231135 Magnetic sensor, production process of the magnetic sensor and magnetic array suitable for the production process
11/24/2004EP1479435A1 Screening of organometallic materials for catalysis
11/24/2004EP1478936A1 Magnetoresistive spin-valve sensor and magnetic storage apparatus
11/23/2004US6822832 Thin film magnetic head and method of manufacturing the same
11/23/2004US6822831 Magnetic thin film, magnetic thin film forming method, and recording head
11/18/2004US20040230271 Magnetically shielded assembly
11/18/2004US20040229083 Perpendicular magnetic recording medium, method for manufacturing the same, and magnetic recording/reproducing apparatus
11/18/2004US20040229082 substrate, zirconium-alumina lower and/or upper layer, ferromagnetic, anti-ferromagnetic, and tunneling barrier layers; improved thermal stability; disk drives
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