Patents for H01F 10 - Thin magnetic films, e.g. of one-domain structure (7,026)
05/2005
05/24/2005US6898132 System and method for writing to a magnetic shift register
05/24/2005US6898115 Magnetoresistive element, and magnetic memory using the same
05/24/2005US6898112 Synthetic antiferromagnetic structure for magnetoelectronic devices
05/24/2005US6898054 Corrosion-resistant soft magnetic film, method of producing the same, thin film magnetic head using the same and method of manufacturing the thin film magnetic head
05/24/2005US6897532 Magnetic tunneling junction configuration and a method for making the same
05/24/2005US6896957 Magnetizable device
05/24/2005US6895658 Includes a free layer formed on a lower gap layer, a tunnel barrier layer formed on the free layer, and a pinned layer formed on the tunnel barrier layer
05/19/2005US20050106330 Forming a magnetic head having an improved platinum manganese layer by forming the layer using ion beam deposition, forming an antiparallel (AP) pinned layer structure above the layer, and forming a free layer above the AP pinned layer structure; improves signal and/or pinned layer stability
05/19/2005US20050105355 Method for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory location device
05/19/2005US20050105221 Magnetoresistive-effect thin film, magnetoresistive-effect element, and magnetoresistive-effect magnetic head
05/19/2005US20050104102 Magnetic storage device comprising memory cells including magneto-resistive elements
05/19/2005US20050104101 Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element
05/18/2005EP1531481A2 Magnetic tunneling junction cell having free magnetic layer with low magnetic moment and magnetic random access memory having the same
05/18/2005EP1166288B1 Magnetic substance with maximum complex permeability in quasi-microwave band and method for production of the same
05/18/2005CN1617258A Magnetic tunneling junction cell and magnetic random access memory
05/18/2005CN1617230A Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device
05/17/2005US6893741 Ruthenium and iron alloy; doubling exchange coupling; hexa-gonal close packed crystalline structure compatible with cobalt alloy ferromagnetic layers
05/17/2005US6893740 CPP type magnetoresistive sensor including pinned magnetic layer provided with hard magnetic region
05/12/2005WO2005043546A1 Magnetoresistive memory cell and method for producing the same
05/12/2005US20050100930 Magnetic nanoparticles, magnetic detector arrays, and methods for their use in detecting biological molecules
05/12/2005US20050100765 For a magnetic recording layer of a magnetic recording medium such as a hard disk
05/12/2005US20050099740 Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device
05/12/2005US20050099739 Narrow track CPP head with bias cancellation
05/12/2005US20050099737 Current-perpendicular-to-the-plane structure magnetoresistive element and head slider including the same
05/12/2005US20050098809 Antiferromagnetic stabilized storage layers in GMRAM storage devices
05/12/2005US20050098807 Bias-adjusted giant magnetoresistive (GMR) devices for magnetic random access memory (MRAM) applications
05/12/2005DE19607197B4 Schichtaufbau mit einem hartmagnetischen Nd-Fe-B-Dünnfilm auf einem Substrat und Verfahren zur Herstellung des Schichtaufbaus Layer structure having a hard magnetic Nd-Fe-B-thin film on a substrate and methods for making the layer structure
05/11/2005CN1615529A High-frequency magnetic thin film, composite magnetic thin film, and magnetic device using same
05/10/2005US6891703 Exchange coupled film having magnetic layer with non-uniform composition and magnetic sensing element including the same
05/10/2005US6891368 Magnetoresistive sensor device
05/10/2005US6891366 Magneto-resistive device with a magnetic multilayer structure
05/10/2005US6890369 Alloy of >/= 60% nickel and tungsten, vanadium, molybdenum, copper, aluminum, cerium, yttrium, magnesium, or rhenium powders; electromagnetic and electrooptical devices; face-centered cubic materials
05/05/2005US20050094470 Magnetic device using ferromagnetic film, magnetic recording medium using ferromagnetic film, and device using ferroelectric film
05/05/2005US20050094436 High output nonvolatile magnetic memory
05/05/2005US20050094427 Magnetic shift register with shiftable magnetic domains between two regions, and method of using the same
05/05/2005US20050094326 Integrated spin valve head
05/05/2005US20050094325 Integrated spin valve head
05/05/2005US20050094324 Integrated spin valve head
05/05/2005US20050094323 Integrated spin valve head
05/05/2005US20050094322 Magnetoresistance effect element
05/05/2005US20050094321 Integrated spin valve head
05/05/2005US20050094302 Magnetic thin film, magnetic component that uses this magnetic thin film, manufacturing methods for the same, and a power conversion device
05/05/2005US20050093039 Techniques for coupling in semiconductor devices
05/04/2005EP1527455A2 Magnetoresistive random access memory with reduced switching field
05/04/2005EP1527351A1 Magnetoresistive layer system and sensor element comprising said layer system
05/04/2005CN1612220A Magnetic head and magnetic recording/reproducing device
05/04/2005CN1200284C Sensing device for measuring external magnetic-field direction using magneto-resistance effect sensing device
05/03/2005US6888707 Spin filter bottom spin valve head with continuous spacer exchange bias
05/03/2005US6888703 Multilayered structures comprising magnetic nano-oxide layers for current perpindicular to plane GMR heads
05/03/2005US6888208 Square-law detector based on spin injection and nanowires
05/03/2005US6887717 Magnetoresistive device and method for producing the same, and magnetic component
05/03/2005US6887513 Coating perovskite oxides on single crystal structured substrates, then oxidizing in oxygen or air to from metal oxide layers for use in magnetic heads or detectors
04/2005
04/28/2005WO2005011010A3 Component with a structure element having magnetic properties and method
04/28/2005US20050088905 Curvature anisotropy in magnetic bits for a magnetic random access memory
04/28/2005US20050088788 Magnetoresistive effect element and magnetic memory having the same
04/28/2005US20050088787 Magnetic head and magnetic recording/reproducing device
04/27/2005EP1526588A1 Magnetoresistance effect element and magnetic memory unit
04/27/2005CN1610021A Magnetic metal particle aggregate and method of producing the same
04/26/2005US6885528 Magnetic sensing element having chromium layer between antiferromagnetic layers
04/26/2005US6885527 Process to manufacture a top spin valve
04/26/2005US6885073 Method and apparatus providing MRAM devices with fine tuned offset
04/26/2005US6885049 Spin dependent tunneling junctions including ferromagnetic layers having flattened peaks
04/26/2005US6884632 Ion beam definition of magnetoresistive field sensors
04/26/2005US6884630 Two-step magnetic tunnel junction stack deposition
04/21/2005US20050084716 Magnetic recording medium and magnetic recording apparatus
04/21/2005US20050084714 Method for fabricating a magnetoresistive film and magnetoresistive film
04/21/2005US20050084668 Magnetic nanoclusters of 1-5 nanometers surrounded by nanophase material of a magnetic saturation moment of > 2.4 T.; thin films of coated nanocluster laminates for magnetic write element in longitudinal, perpendicular and advanced inductive designs to increase areal density recording; transducers
04/21/2005US20050083727 Magnetic thin film element, memory element using the same, and method for recording and reproducing using the memory element
04/21/2005US20050083612 Method and apparatus for manufacturing a magnetoresistive multilayer film
04/21/2005US20050083607 Thin film magnetic head and manufacturing method thereof
04/21/2005DE19603355B4 Identifizierungselement sowie Verfahren zu seiner Herstellung und Verfahren und Vorrichtung zu seiner Detektierung The identification element as well as method for its preparation and to methods and apparatus for its detection
04/20/2005EP1116248B1 Method of manufacturing a magnetic tunnel junction device
04/20/2005CN1607607A Magnetic random access memory (MRAM) having a magnetic tunneling junction (MTJ) layer including a tunneling film of uniform thickness and method of manufacturing the same
04/19/2005US6882510 Low cost anti-parallel pinned spin valve (SV) and magnetic tunnel junction (MTJ) structures with high thermal stability
04/19/2005US6882509 Forming multilayers comprising alloys, iron oxide, nonmagnetic, ferromagnetic, pinning and capping layers on substrates, used as giant magnetoresistance (GMR) detectors; magnetic recording media or disc heads
04/19/2005US6881993 Device having reduced diffusion through ferromagnetic materials
04/19/2005US6881504 Multilayer; magnetic layer with nonmagnetic interface
04/19/2005US6881495 Magnetic material with a recording layer stacked on it having a second magnetic material which exerts exchange coupling interaction with the first magnetic material in a direction to make an orthogonal relation under room temperature
04/14/2005WO2005034096A1 Dual seed layer for recording media
04/14/2005US20050079647 Method and system for patterning of magnetic thin films using gaseous transformation
04/14/2005US20050078418 Ferromagnetic double tunnel junction element with asymmetric energy band
04/14/2005US20050078417 Magnetoresistance effect device, method of manufacturing the same, magnetic memory apparatus, personal digital assistance, and magnetic reproducing head, and magnetic information reproducing apparatus
04/13/2005CN1606107A Method and system for patterning of magnetic thin films using gaseous transformation
04/12/2005US6879475 Magnetoresistive effect element having a ferromagnetic tunneling junction, magnetic memory, and magnetic head
04/12/2005US6879473 Magnetoresistive device and magnetic memory device
04/12/2005US6879472 Exchange coupling film and electoresistive sensor using the same
04/12/2005US6878979 Spin switch and magnetic storage element using it
04/07/2005WO2005031762A2 Magnetic thin film for high frequency and its production method, and magnetic element
04/07/2005US20050074634 Comprising main component of barium calcium titanate and sub-components of magnesium carbonate, rare earth oxide, barium or calcium oxide, manganese, vanadium, chromium oxides, sintering additive of silicon oxide; can be sintered at low temperature; high dielectric constant, excellent thermal stability
04/07/2005US20050073778 Magnetic sensing element including magnetic layer composed of Heusler alloy disposed on underlayer having {111}-oriented fcc structure
04/07/2005US20050073016 Asymmetric patterned magnetic memory
04/06/2005EP1521269A2 Asymmetric patterned magnetic memory
04/06/2005CN1604200A Thin film media with a dual seed layer of rual/nialb
04/06/2005CN1196251C Method and equipment for frequency multiplication
04/06/2005CN1196132C Memory cell arrangement and operational method therefor
04/05/2005US6876886 Magnetically shielded conductor
04/05/2005US6876574 Magnetoresistive device and electronic device
04/05/2005US6876527 Magnetoresistive sensor with antiparallel coupled lead/sensor overlap region
04/05/2005US6876525 Giant magnetoresistance sensor with stitched longitudinal bias stacks and its fabrication process
04/05/2005US6876524 Magnetoresistive transducer having stronger longitudinal bias field
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