Patents for H01F 10 - Thin magnetic films, e.g. of one-domain structure (7,026)
07/2005
07/14/2005WO2005062974A2 Nanoelectrical compositions
07/14/2005US20050153063 Synthetic antiferromagnetic structure for magnetoelectronic devices
07/14/2005US20050152077 Magnetoresistive device, magnetoresistive head and magnetic recording-reproducing apparatus
07/14/2005US20050152075 Magnetoresistance effect element and method for manufacturing the same, and magnetic memory device
07/14/2005US20050152074 Magnetoresistance effect element, magnetic head and magnetic reproducing system
07/13/2005EP1553565A1 Multilayer structure film and process for producing the same
07/13/2005EP1552526A2 Magnetic element utilizing spin transfer and an mram device using the magnetic element
07/13/2005CN1637859A Magnetoresistive element, magnetic head, magnetic reproducing apparatus, and magnetic memory
07/13/2005CN1210818C Magnetic component and magnetic head and magnetic memory using this magnetic component
07/12/2005US6917499 Magnetoresistive magnetic sensor and magnetic storage apparatus
07/12/2005US6917492 Magnetoresistive element and method for manufacturing the same and nonvolatile memory including the same
07/12/2005US6917088 Magneto-resistive devices
07/07/2005US20050146813 Current-perpendicular-to-the-plane structure magnetoresistive element and head slider
07/07/2005US20050145909 Magnetoresistive device and electronic device
07/06/2005CN1635590A Method for inhibiting film interface reaction
07/05/2005US6914757 Magnetoresistance effect element, magnetic head and magnetic reproducing system
07/05/2005US6914257 Magnetoresistive device and method of producing the same
07/05/2005US6913836 Spin-valve type magnetoresistive sensor and method of manufacturing the same
06/2005
06/30/2005WO2005031762A3 Magnetic thin film for high frequency and its production method, and magnetic element
06/30/2005WO2005020242A3 Magnetic memory element utilizing spin transfer switching and storing multiple bits
06/30/2005US20050142352 To be used in a magnetic recording medium
06/30/2005US20050141147 Magnetoresistance effect element and magnetic head
06/30/2005US20050141145 Magnetoresistive sensor with antiparallel coupled lead/sensor overlap region
06/30/2005US20050141144 Magnetoresistance effect element having a nonmagnetic intermediate layer having a two-dimensional fluctuation of resistance
06/29/2005EP1548832A1 Magnetoresistive random-access memory device
06/29/2005EP1548762A2 Magnetoresistive element, magnetic head, magnetic reproducing apparatus, and magnetic memory
06/29/2005EP1548702A1 Method for ultra-fast controlling of a magnetic cell and related devices
06/29/2005EP1547102A2 Nanocrystalline layers and improved mram tunnel junctions
06/29/2005EP1547101A1 Amorphous alloys for magnetic devices
06/29/2005EP1399920B1 Magnetic multilayered films with reduced magnetostriction
06/29/2005CN1632892A Magnetic particle film having controllable magnetic anisotropy and preparing method thereof
06/29/2005CN1208757C Magnetic resistance magnetic head current upright on plane structure
06/28/2005US6912107 Magnetic element with insulating veils and fabricating method thereof
06/28/2005US6911710 Multi-bit magnetic memory cells
06/28/2005US6911709 Method of manufacturing a magnetic tunnel junction device
06/23/2005WO2005020251A3 High speed low power magnetic devices based current induced spin-momentum transfer
06/23/2005US20050136600 Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements
06/23/2005US20050135021 Exchange coupled film having improved current-carrying reliability and improved rate of change in resistance and magnetic sensing element using same
06/23/2005US20050135020 Magnetoresistive element and magetoresistive magnetic head, magnetic recording apparatus and magnetoresistive memory device using the same
06/23/2005US20050135018 Magnetoresistance effect element having a nonmagnetic intermediate layer having a two-dimensional fluctuation of resistance
06/23/2005DE102004039978A1 Magnetic tunnel junction device for magnetic RAM cell, has free magnetic layer with lamination of ferromagnetic layers, where magnetic spins of layer are rotated by magnetic flux Heasy in minimal overlap regions
06/22/2005EP1544874A1 Solid material comprising a structure of almost-completely-polarised electronic orbitals, method of obtaining same and use thereof in electronics and nanoelectronics
06/22/2005EP1543566A2 Thermally stable magnetic element utilizing spin transfer and an mram device using the magnetic element
06/22/2005CN1630921A Method for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory location device
06/21/2005US6907655 Method for manufacturing a spin valve having an enhanced free layer
06/21/2005US6907654 Method of manufacturing spin valve film
06/16/2005WO2004028002A3 Spin driven resistors and nanogates
06/16/2005US20050129984 Magnetic media with improved exchange coupling
06/16/2005US20050129609 Method for preparation of magnetic spinel ferrites from layered double hydroxide precursors
06/16/2005US20050128650 Magnetoresistance effect element having a nonmagnetic intermediate layer having a two-dimensional fluctuation of resistance
06/16/2005US20050127416 MRAM cell with flat topography and controlled bit line to free layer distance and method of manufacture
06/16/2005DE112004000008T5 Magnetaufzeichnungsmedium Magnetic recording medium
06/15/2005CN1628342A Poly crystal structure film and method for producing same
06/14/2005US6906949 Magnetic element and magnetic element array
06/14/2005US6906898 Differential detection read sensor, thin film head for perpendicular magnetic recording and perpendicular magnetic recording apparatus
06/14/2005US6906256 Nanomagnetic shielding assembly
06/14/2005US6905780 Current-perpendicular-to-plane-type magnetoresistive device, and magnetic head and magnetic recording-reproducing apparatus using the same
06/14/2005US6904669 Magnetic sensor and method of producing the same
06/09/2005WO2005052961A1 High frequency thin film electrical circuit element
06/09/2005WO2005022653A3 Magnetoresistive random access memory with reduced switching field variation
06/09/2005US20050123755 Alignable diffractive pigment flakes
06/09/2005US20050122636 Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems
06/09/2005US20050121809 Information storage apparatus and electronic device in which information storage apparatus is installed
06/09/2005US20050120546 Magnetic head having high conductivity lead structures seeded by epitaxially matched seed layer and fabrication method therefor
06/09/2005DE10350161A1 Magnetoresistive Speicherzelle und Verfahren zu deren Herstellung Magnetoresistive memory cell and process for their preparation
06/08/2005EP1537182A2 Alignable diffractive pigment flakes
06/07/2005US6903909 Magnetoresistive element including ferromagnetic sublayer having smoothed surface
06/07/2005US6903908 Magnetoresistive effect sensor with barrier layer smoothed by composition of lower shield layer
06/07/2005US6903907 Magnetic sensing element having specular layer
06/07/2005US6903904 Replacing conventional single layer that forms part of synthetic pinned layer with multilayer structure into which has been inserted a layer of a material such as tantalum that depolarizes spin of electrons that transverse its interfaces
06/07/2005US6903645 Surface mounting type planar magnetic device and production method thereof
06/07/2005US6903430 Digital magnetic memory cell device
06/07/2005US6903399 Antiferromagnetically stabilized pseudo spin valve for memory applications
06/07/2005US6903396 Control of MTJ tunnel area
06/07/2005US6902807 Alignable diffractive pigment flakes
06/07/2005US6902600 Rolled and annealed compacted and sintered powder-metallurgy preform article formed from a powder mixture of Ni; Al; and one of Cu, Cr, W, V, and Mo
06/07/2005US6901652 Comprises ferromagnetic layer and second antiferromagnetic layer deposited on nonmagnetic layer; for use in hard disks
06/02/2005WO2005050661A1 Antiferromagnetic stabilized storage layers in gmram storage devices
06/02/2005WO2005013385A3 Method for manufacturing magnetic field detection devices and devices threfrom
06/02/2005US20050118458 forming multilayers of dielectric spacers and cobalt iron-based ferromagnetic alloys, having improved perfomances, for use in electronics
06/02/2005US20050116803 High-frequency magnetic thin film, composite magnetic thin film, and magnetic device using same
06/01/2005EP1536490A1 Magnetoresistance effect element and production method and application method therefor
06/01/2005EP1536433A1 High frequency thin film electrical circuit element
06/01/2005CN1623188A Polycrystalline structure and its production method
06/01/2005CN1623100A Magnetoresistive layer system and sensor element comprising said layer system
06/01/2005CN1204571C Nano composite rare earth permanent magnet film material
05/2005
05/31/2005US6900489 Reducing the effects of néel coupling in MRAM structures
05/31/2005US6900455 Multilayer dielectric tunnel barrier used in magnetic tunnel junction devices, and its method of fabrication
05/31/2005US6899964 Magnetic recording medium and method for manufacturing the same
05/31/2005US6899959 Multilayer; magnetic recording media, undercoatings, substrates, ruthenium containing layer and antiferromagnetic compound; high speed switch
05/26/2005WO2005048244A1 Bias-adjusted giant magnetoresistive (gmr) devices for magnetic random access memory (mram) applications
05/26/2005WO2005047864A2 Magnetic nanoparticles, magnetic detector arrays, and methods for their use in detecting biological molecules
05/26/2005US20050111148 Method of increasing CPP GMR in a spin valve structure
05/26/2005US20050111147 Method for forming a compound magnetic thin film
05/26/2005US20050111144 Magneto-resistive element and device being provided with magneto-resistive element having magnetic nano-contact
05/26/2005US20050110004 Magnetic tunnel junction with improved tunneling magneto-resistance
05/26/2005US20050109427 Magnetic alloy, magnetic recording medium, and magnetic recording and reproducing apparatus
05/25/2005CN1620687A Magnetic recording medium and magnctic memory
05/25/2005CN1203561C Magnetoresistance element, its manufacturing method and forming method for compound ferromagnet film
05/25/2005CN1203349C Magnetic garnet material and photomagnetic device using the same material
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