Patents for H01F 10 - Thin magnetic films, e.g. of one-domain structure (7,026)
04/2005
04/05/2005US6876523 Magnetic head, and the magnetic read-write devices, and the magnetic memory with magnetic sensors
04/05/2005US6876522 GMR spin valve structure using heusler alloy
04/05/2005US6876521 Method of making a solid state inductor
04/05/2005US6875522 Magnetic thin film interference device or pigment and method of making it, printing ink or coating composition, security document and use of such a magnetic thin film interference device
04/05/2005US6875505 Magnetic recording medium
04/05/2005US6875270 Magnetic garnet single-crystal film and method of producing the same, and Faraday rotator comprising the same
03/2005
03/31/2005WO2004114334A3 Method of patterning a magnetic memory cell bottom electrode before magnetic stack deposition
03/31/2005US20050069730 Thin film media with a dual seed layer of rual/nialb
03/31/2005US20050068834 Magnetic random access memory (MRAM) having a magnetic tunneling junction (MTJ) layer including a tunneling film of uniform thickness and method of manufacturing the same
03/31/2005US20050068698 Magnetoresistance effect element and magnetic head
03/31/2005US20050068695 Magnetoresistive multilayer film
03/31/2005US20050068688 Magnetoresistance effect element, method of manufacturing same and magnetic head utilizing same
03/30/2005EP1519417A2 Magnetic random access memory comprising MTJ layer and method of manufacturing
03/30/2005CN1195294C Edge offset magnetic-resistance sensor, its mfg. method and magnetic memory system comprising same
03/29/2005US6873500 Exchange coupling film capable of improving playback characteristics
03/24/2005WO2005027154A1 Magnetic thin film for high frequency, method for manufacturing the same, and magnetic element
03/24/2005WO2005027100A1 Perpendicular magnetic recording medium having amorphous soft magnetic film
03/24/2005WO2005027099A1 EXCHANGE COUPLED FILM HAVING ANTIFERROMAGNETIC Mn-Ir ALLOY FILM AND METHOD FOR PRODUCING SAME, AND PERPENDICULAR MAGNETIC RECORDING MEDIUM AND METHOD FOR PRODUCING SAME
03/24/2005US20050064244 High saturation flux density soft magnetic material
03/24/2005US20050064157 Magnetic memory and method of operation thereof
03/24/2005US20050063104 Magnetic recording/reproducing apparatus
03/23/2005EP1517383A1 Magnetoresistive device and magnetic memory device
03/23/2005CN1598930A Quenching nano crystal giant magnetic impedance tape material and preparation method
03/23/2005CN1194230C Plane magnetic sensor and plane magnetic sensor using for multidimensional magnetic field analysis
03/23/2005CN1194116C Sputtering target and antiferromagnetic film and magneto-resistance effect element formed by using same
03/22/2005US6870762 Electron spin mechanisms for inducing magnetic-polarization reversal
03/22/2005US6870715 Spin valve magnetoresistive head having a free layer contacted at each end by a ferromagnetic layer of a bias layer
03/22/2005US6869806 Method and apparatus for the production of a semiconductor compatible ferromagnetic film
03/17/2005WO2005024968A1 Tunnel junction element
03/17/2005WO2005024861A1 Magnetic bias film and magnetic sensor using the same
03/17/2005WO2005002308A3 Pieces for passive electronic components and method for production thereof
03/17/2005US20050059170 Magnetic random access memory designs with patterned and stabilized magnetic shields
03/17/2005US20050057992 Magnetoresistance effect element, method of manufacture thereof, magnetic storage and method of manufacture thereof
03/17/2005US20050057862 Magnetoresistive element, magnetic head and magnetic recording/reproducing apparatus
03/16/2005EP1419506B1 Control device for reversing the direction of magnetisation without an external magnetic field
03/16/2005CN1596436A Anti-ferromagnetically coupled perpendicular magnetic recording media
03/16/2005CN1193441C Magnetic tunnel device, magnetic storage and element using said device and its access method
03/16/2005CN1193374C 磁存储装置与磁基片 A magnetic storage device and the magnetic substrate
03/16/2005CN1192954C Electric component containing metal box with magnetic loss material
03/15/2005US6868002 Magnetic memory with reduced write current
03/15/2005US6867665 Filters implemented in integrated circuits
03/10/2005WO2005022653A2 Magnetoresistive random access memory with reduced switching field variation
03/10/2005WO2005022565A1 Nano-particle device and method for manufacturing nano-particle device
03/10/2005US20050053802 High saturation magnetic flux density and superior soft magnetic characteristics; magnetic heads; disk drives; corrosion resistance
03/10/2005US20050052900 Magnetic device
03/10/2005US20050052793 Magnetoresistive spin-valve sensor and magnetic storage apparatus
03/10/2005US20050052790 Ferromagnetic tunnel magnetoresistive devices and magnetic head
03/10/2005US20050052788 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
03/09/2005EP1513167A2 Magnetoresistance effect film, magnetoresistance effect head and solid state memory
03/09/2005CN1591675A Magnetic dual element with dual magnetic states and fabricating method thereof
03/09/2005CN1591673A Magnetic tunnel junction and memory device including the same
03/09/2005CN1591581A Magnetic recording/reproducing apparatus
03/09/2005CN1591580A Magnetoresistance effect film, magnetoresistance effect head and solid state memory
03/09/2005CN1590580A Antiferromagnetic film and magneto-resistance effect element formed by using the same
03/09/2005CN1192392C Field response reinforced magnetic component and its mfg. method
03/08/2005US6864418 Power source for medical equipment, prosthetics
03/08/2005US6864201 Preparation and screening of crystalline zeolite and hydrothermally-synthesized materials
03/08/2005US6863998 Magnetic recording medium, method for producing the same, and magnetic recording apparatus
03/08/2005US6863993 Thin film media with a dual seed layer of RuAI/NiAIB
03/03/2005WO2005020251A2 High speed low power magnetic devices based current induced spin-momentum transfer
03/03/2005WO2005020242A2 Magnetic memory element utilizing spin transfer switching and storing multiple bits
03/03/2005WO2004107405A3 Spin valves using organic spacers and spin-organic light-emitting structures using ferromagnetic electrodes
03/03/2005US20050048675 Method of etching magnetic material, magnetoresistive film and magnetic random access memory
03/03/2005US20050048325 synthetic ferrimagnetic structure as a recording layer, with a bottom and a top magnetic layer which are antiferromagnetically coupled via a nonmagnetic spacer layer; thermal stability
03/03/2005US20050047263 Method for reducing diffusion through ferromagnetic materials
03/03/2005US20050047206 Magnetic memory with write inhibit selection and the writing method for same
03/03/2005US20050047029 Magnetoresistance effect film, magnetoresistance effect head and solid state memory
03/03/2005US20050047028 Magnetoresistance effect element
03/03/2005US20050047026 Magnetoresistance effect element, magnetic head and magnetic reproducing system
03/03/2005US20050045976 Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and ferromagnetic semiconductor based device
03/03/2005US20050045971 Magnetic memory with self-aligned magnetic keeper structure
03/03/2005US20050045931 Magnetic random access memory designs with controlled magnetic switching mechanism by magnetostatic coupling
03/03/2005US20050045929 Magnetoresistive random access memory with reduced switching field variation
03/03/2005US20050045913 Magnetic memory element utilizing spin transfer switching and storing multiple bits
03/03/2005CA2535965A1 High speed low power magnetic devices based current induced spin-momentum transfer
03/02/2005CN1589478A Magnetoresistance random access memory for improved scalability
03/02/2005CN1191211C Method for preparing magnetic ferrite from layered precursor
03/01/2005US6862212 Multi-bit magnetic memory cells
03/01/2005US6862159 Capable of outputting a pulsed signal when moving over a magnetization transition region
03/01/2005US6862158 Exchange coupling film having improved wettability of seed layer
03/01/2005US6861940 Magnetoresistive element
03/01/2005US6861718 Spin valve transistor, magnetic reproducing head and magnetic information storage system
03/01/2005US6861342 Zinc blende type CrSb compound, method for fabricating the same, and multilayered structure
03/01/2005US6861314 Semiconductor memory device utilizing tunnel magneto resistive effects and method for manufacturing the same
02/2005
02/24/2005WO2005017048A2 Flake for covert security applications
02/24/2005US20050042425 Magnetic grains of cobalt alloy overcoating nonmagnetic substrate ; magnetic recording media
02/24/2005US20050042367 Multilayer; alternating laminated stacks of magnetic layer containing ferromagnetic material such as cobalt alloy with chromium and nonmagnetic layer containing palladium alloy ; stability; heat resistance
02/24/2005US20050041462 High speed low power magnetic devices based on current induced spin-momentum transfer
02/24/2005US20050041456 Magneto-resistive effect element and magnetic memory
02/24/2005US20050041335 Magnetic recording medium, magnetic recording apparatus and magnetic recording method
02/24/2005US20050040482 EPIR device and semiconductor devices utilizing the same
02/24/2005US20050040433 Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same
02/24/2005CA2533362A1 Flake for covert security applications
02/23/2005CN1190804C Magnetic substance with maximum complex permeability in quasi-microwave band and method for production of the same
02/22/2005US6858330 Perpendicular magnetic recording media and magnetic storage apparatus using the same
02/17/2005WO2004029973A3 Thermally stable magnetic element utilizing spin transfer and an mram device using the magnetic element
02/17/2005US20050037238 Perpendicular magnetic recording medium and method for production thereof
02/17/2005US20050036244 Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems
02/17/2005US20050035383 Magnetic tunnel junction and memory device including the same
02/17/2005US20050034789 Thin film magnetic head including NiPRe alloy gap layer
1 ... 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 ... 71