Patents for H01F 10 - Thin magnetic films, e.g. of one-domain structure (7,026)
09/2005
09/01/2005US20050191829 Solid material comprising a structure of almost-completely-polarised electronic orbitals, method of obtaining same and use thereof in electronics and nanoelectronics
09/01/2005US20050191525 Magnetic recording medium and magnetic recording medium substrate
09/01/2005US20050190594 Magnetic element and magnetic element array
09/01/2005US20050190498 Magnetic recording disk with antiferromagnetically-coupled magnetic layer having multiple lower layers
09/01/2005US20050189574 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
08/2005
08/31/2005EP1569207A1 Magnetic recording disk with antiferromagnetically-coupled magnetic layer having multiple lower layers
08/31/2005EP1327251B1 Magnetic element, memory device and write head
08/31/2005CN1661688A Magnetic recording medium and magnetic recording medium substrate
08/31/2005CN1661686A Magnetic recording disk with antiferromagnetically-coupled magnetic layer having multiple lower layers
08/31/2005CN1217320C Magnetic recording medium and method for fabricating a magnetic redording medium
08/30/2005US6937449 Spin-valve head containing closed-flux-structure domain control films
08/30/2005US6937434 Magnetic field sensor utilizing anomalous hall effect magnetic film
08/30/2005US6936352 Magnetic recording medium with controlled lattice spacing and method of forming thereof
08/25/2005WO2005078748A1 Magnetic thin film and utilizing the same, magnetoresistive effect element and magnetic device
08/25/2005US20050186452 CPP GMR and magnetostriction improvement by laminating Co90Fe10 free layer with thin Fe50Co50 layers
08/25/2005US20050185348 Head with improved spin valve properties
08/25/2005US20050185347 Magnetoresistive element and magnetic memory device
08/25/2005US20050185346 Magnetic sensing device, method of forming the same, magnetic sensor, and ammeter
08/25/2005US20050184839 Spin transfer magnetic element having low saturation magnetization free layers
08/24/2005EP1566651A1 Magnetic sensing device, method of forming the same, magnetic sensor and ammeter
08/24/2005CN1659707A Magnetoresistive random-access memory device and control method for ferromagnetic trsfer temp of ferromagnetiv semiconductor for comprising the device
08/24/2005CN1657967A Magnetic sensing device, method of forming the same, magnetic sensor, and ammeter
08/23/2005US6934133 Three terminal magnetic head having a magnetic semiconductor and a tunnel magnetoresistive film and magnetic recording apparatus including the head
08/23/2005US6934132 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
08/23/2005US6934130 Magnetic device having shaped ferromagnetic film
08/18/2005US20050182471 Magnetically shielded conductor
08/18/2005US20050179101 Tunneling magnetoresistance device semiconductor junction device magnetic memory and semiconductor light-emitting device
08/18/2005DE102004003369A1 High-frequency magnetic component has a sequence of ferromagnetic components and anti-ferromagnetic layers
08/17/2005EP1563509A2 Spin driven resistors and nanogates
08/17/2005CN1655374A Current-perpendicular-to-plane magnetoresistive sensor and method for manufacturing the same
08/17/2005CN1215468C Magnetic duplicating method
08/16/2005US6930242 Magnetically shielded conductor
08/16/2005US6929960 Reducing the effects of neel coupling in MRAM structures
08/16/2005US6929957 Magnetic random access memory designs with patterned and stabilized magnetic shields
08/16/2005US6928723 Method for making a magnetoresistive sensor having a cobalt-ferrite pinning layer
08/11/2005WO2005064783A3 Tuneable spin torque device for generating an oscillating signal and method for tuning
08/11/2005US20050175790 Can process a magnetic film including a recording portion and a non-recording portion in accordance with a recording pattern; has at least one of Fe and Co and at least one of Pd and Pt
08/11/2005US20050174876 Semiconductor storage device and production method therefor
08/11/2005US20050174834 Magnetic tunneling junction cell having a free magnetic layer with a low magnetic moment and magnetic random access memory having the same
08/11/2005US20050174821 Multi-stage per cell magnetoresistive random access memory
08/11/2005US20050174704 Giant magnetoresistance sensor with stitched longitudinal bias stacks and its fabrication process
08/11/2005US20050174701 Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized against vortex magnetic domains generated by the sense current
08/11/2005US20050173698 Multilayer dielectric tunnel barrier used in magnetic tunnel junction devices, and its method of fabrication
08/11/2005DE102004063497A1 Magnetic element e.g. for microelectronics and micro-systems technology, has layers with crossed anisotropies
08/10/2005EP1561738A2 Method for producing a carbon layer-covering transition metallic nano-structure or transition metallic nano-structure pattern and carbon layer-covering transition metallic nano-structure or transition metallic nano-structure pattern
08/10/2005CN1653550A Resistive memory elements with reduced roughness
08/10/2005CN1651928A Magnetic sensor and method of producing the same
08/10/2005CN1214473C Magnetic tunnel junction element and magnetic memory using it
08/10/2005CN1214414C Method of mfg. magnetic tunnel junction device
08/10/2005CN1214407C Composition magnetic body and electromagnetic interference suppressing body using the same
08/09/2005US6927949 Spin valve head with reduced element gap
08/09/2005US6927948 Differential CPP GMR sensor with free layers separated by metal gap layer
08/09/2005US6927467 Magnetoresistive memory device and method for fabricating the same
08/09/2005US6927075 Magnetic memory with self-aligned magnetic keeper structure
08/04/2005WO2005017048A3 Flake for covert security applications
08/04/2005WO2003036734A3 Magnetoresistance effect element, magetic memory element, magnetic memory device, and their manufacturing method
08/04/2005US20050170218 Tunnel junction type includes a magnetic multi-layered film, ferromagnetic film, insulating film such that a current flows between the magnetic multi-layered film and the ferromagnetic film, tunneling through the insulating film; entirety of first magnetic multi-layered film can be rewritten
08/04/2005US20050170181 Method for producing a carbon layer-covering transition metallic nano-structure, method for producing a carbon layer-covering transition metallic nano-structure pattern, carbon layer-covering transition metallic nano-structure, and carbon layer-covering transition metallic nano-structure pattern
08/04/2005US20050168888 Magnetoresistive sensor having cobalt-iron alloy layer in free layer
08/04/2005US20050168887 Magnetoresistive element, magnetic head, magnetic reproducing apparatus, and magnetic memory
08/04/2005US20050168885 Exchange coupling film and magnetoresistive element using the same
08/04/2005US20050168882 Magnetic resistance device and method of manufacturing the same
08/04/2005US20050168881 Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads
08/04/2005US20050168880 Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads
08/04/2005US20050168879 Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads
08/04/2005US20050168876 Magnetic thin film head, the fabrication method, and magnetic disk
08/04/2005US20050168317 TMR sensor with oxidized alloy barrier layer and method for forming the same
08/04/2005US20050167657 Multi-bit magnetic memory cells
08/03/2005EP1560231A2 Magnetic resistance device
08/03/2005EP1559107A1 Bilayer cmp process to improve surface roughness of magnetic stack in mram technology
08/03/2005CN1649028A Magnetic resistance device
08/02/2005US6923860 Oxidation of material for tunnel magneto-resistive sensors
08/02/2005US6922884 Method for preventing magnetic damage to a GMR head during back-end processing
07/2005
07/28/2005WO2005068688A2 Plating solution, process for producing a structure with the plating solution, and apparatus employing the plating solution
07/28/2005US20050164414 Magnetic annealing sequences for patterned MRAM synthetic antiferromagnetic pinned layers
07/28/2005US20050164039 Hard bias to a ferromagnetic layer in a magnetoresistive sensor with an ultra contiguous junction arrangement provided by a seed layer structure of alternating layers of chromium or chromium alloy and a dielectric, i.e., oxides of aluminum, silicon tantalum and hafnium; superior properties; thickness
07/28/2005US20050162970 Magnetic memory device and manufacturing method thereof
07/28/2005US20050162905 Magnetoresistive effect element and magnetic memory device
07/28/2005US20050162904 Magnetoresistive effect element and magnetic memory device
07/28/2005US20050162786 Magnetoresistive head with improved in-stack longitudinal biasing layers and fabricating method
07/28/2005US20050160585 Magnetoresistive memory device and method for fabricating the same
07/27/2005CN1647208A Synthetic-ferrimagnet sense-layer for high density MRAM applications
07/26/2005US6921954 Asymmetric patterned magnetic memory
07/21/2005WO2005047864A9 Magnetic nanoparticles, magnetic detector arrays, and methods for their use in detecting biological molecules
07/21/2005US20050158952 Mram devices with fine tuned offset
07/21/2005US20050158585 Vertical magnetic recordding medium magnetic recorder having same vertical magnetic recording medium manufacturing method and vertical magnetic recording medium manufacturing apparatus
07/21/2005US20050157435 Spin-valve element having fixed layer containing nano-oxide layer
07/21/2005US20050156704 Magnetic material for transformers and/or inductors
07/21/2005US20050155214 Magnetic recording medium and method of producing the same
07/20/2005EP1116043B1 Method of manufacturing a magnetic tunnel junction device
07/20/2005EP0991913B1 Element comprising a layer structure and a current-directing means
07/20/2005CN1211873C Magnetic resistance element and magnetic device using same
07/20/2005CN1211872C Magnetoresistive memory having improved interference immunity
07/20/2005CN1211784C Magnetic medium with covered ferromagnetic material for improving thermal stability
07/19/2005US6920063 Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
07/19/2005US6920022 Magnetic transducer, thin film magnetic head, method of manufacturing magnetic transducer and method of manufacturing thin film magnetic head
07/19/2005US6919213 Methods for operating a unipolar spin transistor and applications of same
07/19/2005US6919138 Magnetic recording media
07/14/2005WO2005064783A2 Tuneable spin torque device for generating an oscillating signal and method for tuning
07/14/2005WO2005064590A1 Method for ultra-fast controlling of a magnetic cell and related devices
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