Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
10/2011
10/12/2011EP2374133A1 Sensing circuit and method with reduced susceptibility to spatial and temperature variations
10/12/2011CN202008842U Self-resettable DRAM
10/12/2011CN1975928B Phase change random access memory and method of controlling read operation thereof
10/12/2011CN1975927B Phase-changeable memory device and read method thereof
10/12/2011CN1853241B Methods for identifying non-volatile memory elements with poor subthreshold slope or weak transconductance
10/12/2011CN102216999A Reference voltage optimization for flash memory
10/12/2011CN102216998A Controlled data access to non-volatile memory
10/12/2011CN102216997A Stacked semiconductor devices including a master device
10/12/2011CN102214484A Non volatile memory device and multi level cell programming method thereof
10/12/2011CN101361138B Reading non-volatile storage with efficient control of non-selected word lines
10/12/2011CN101335517B Amplifier
10/12/2011CN101162611B Voltage generation circuit, flash memory device including the same and method for programming the flash memory device
10/11/2011US8037381 Error detection, documentation, and correction in a flash memory device
10/11/2011US8036044 Dynamically adjustable erase and program levels for non-volatile memory
10/11/2011US8036043 Nonvolatile semiconductor device and memory system including the same
10/11/2011US8036042 Method of operating nonvolatile memory device
10/11/2011US8036040 Memory system with improved efficiency of data transfer between host, buffer, and nonvolatile memory
10/11/2011US8036039 Flash memory device and program method thereof
10/11/2011US8036036 Semiconductor device and a manufacturing method thereof
10/11/2011US8036035 Erase cycle counter usage in a memory device
10/11/2011US8036034 Semiconductor storage device equipped with a sense amplifier for reading data and threshold-voltage-information data
10/11/2011US8036032 5T high density NVDRAM cell
10/11/2011US8036031 Semiconductor device having a field effect source/drain region
10/11/2011US8036028 Method of programming a non-volatile memory device with timely-adjusted voltages applied to word lines to prevent program disturb
10/11/2011US8036018 Non-volatile memory devices including stacked NAND-type resistive memory cell strings
10/06/2011WO2011123583A1 Systems and methods of non-volatile memory sensing including selective/differential threshold voltage features
10/06/2011WO2011123279A1 Extra dummy erase pulses after shallow erase -verify to avoid sensing deep erased threshold voltage
10/06/2011US20110246860 Semiconductor Integrated Circuit
10/06/2011US20110246855 Method and Apparatus of Generating a Soft Value for a Memory Device
10/06/2011US20110242904 Read Only Memory and Operating Method Thereof
10/06/2011US20110242903 Semiconductor memory device capable of shortenin erase time
10/06/2011US20110242902 Nonvolatile semiconductor memory device
10/06/2011US20110242901 Lifetime markers for memory devices
10/06/2011US20110242900 Memory cell sensing devices and methods
10/06/2011US20110242899 Extra dummy erase pulses after shallow erase-verify to avoid sensing deep erased threshold voltage
10/06/2011US20110242898 4-transistor non-volatile memory cell with pmos-nmos-pmos-nmos structure
10/06/2011US20110242897 Program and read trim setting
10/06/2011US20110242896 Semiconductor integrated circuit device
10/06/2011US20110242895 Memory device, manufacturing method for memory device and method for data writing
10/06/2011US20110242894 Method and system to isolate memory modules in a solid state drive
10/06/2011US20110242892 Non-volatile semiconductor memory device
10/06/2011US20110242891 Operation methods for memory cell and array for reducing punch through leakage
10/06/2011US20110242890 Semiconductor memory device for storing multivalued data
10/06/2011US20110242889 Programming non-volatile memory with high resolution variable initial programming pulse
10/05/2011EP2370977A1 Non-volatile memory and method for sensing with pipelined corrections for neighboring perturbations
10/05/2011EP2370976A1 Non-volatile memory and method with continuous scanning time-domain sensing
10/05/2011EP2370960A1 Deactivation of integrated circuits
10/05/2011EP1743339B1 Silicon on insulator read-write non-volatile memory comprising lateral thyristor and trapping layer
10/05/2011EP1711948B1 Variable current sinking for coarse/fine programming of non-volatile memory
10/05/2011CN202003695U Memory and memory system with accumulated written-in characteristic
10/05/2011CN1983448B Flash memory device and word line enable method thereof
10/05/2011CN102210022A Solid state drive or other storage apparatus that includes a plurality of encapsulated semiconductor chips
10/05/2011CN102208210A Flash memory device and data storage method thereof
10/05/2011CN102208207A System for sensing sink current based on sampled and maintained source cathode terminals
10/05/2011CN101154465B Nonvolatile semiconductor memory device
10/05/2011CN101145397B Evaluation circuit and evaluation method for the assessment of memory cell states
10/05/2011CN101123115B Semiconductor memory device
10/04/2011US8032694 Direct logical block addressing flash memory mass storage architecture
10/04/2011US8031536 Storage device employing a flash memory
10/04/2011US8031532 Methods of operating embedded flash memory devices
10/04/2011US8031531 Incremental memory refresh
10/04/2011US8031530 Method of performing read operation of nonvolatile memory device
10/04/2011US8031528 Flash memory programming and verification with reduced leakage current
10/04/2011US8031527 Semiconductor device and method for adjusting reference levels of reference cells
10/04/2011US8031525 Flash memory device and program method thereof
10/04/2011US8031524 Structures and methods to store information representable by a multiple-bit binary word in electrically erasable, programmable read-only memory (EEPROM)
10/04/2011US8031523 Memory and reading method thereof
10/04/2011US8031520 Method for reading and programming a charge-trap memory device compensated for an array/second-bit/neighbor-bit effect
09/2011
09/29/2011WO2011119500A1 Simultaneous multi-state read or verify in non-volatile storage
09/29/2011WO2011118351A1 Semiconductor device
09/29/2011WO2011096978A3 5-transistor non-volatile memory cell
09/29/2011US20110235437 Single-Polycrystalline Silicon Electrically Erasable and Programmable Memory Device of Varied Gate Oxide Thickness, Using PIP or MIM Coupling Capacitor for Cell Size Reduction and Simultaneous VPP and VNN for Write Voltage Reduction
09/29/2011US20110235436 Semiconductor memory device
09/29/2011US20110235435 Non-Volatile Memory and Method for Power-Saving Multi-Pass Sensing
09/29/2011US20110235434 Systems and methods for refreshing non-volatile memory
09/29/2011US20110235433 Verifying an erase threshold in a memory device
09/29/2011US20110235432 Method of erasing in non-volatile memory device
09/29/2011US20110235431 Nonvolatile semiconductor memory and method of operating the same
09/29/2011US20110235430 Memory device and method
09/29/2011US20110235429 Method and apparatus for programming flash memory
09/29/2011US20110235428 Compensation of non-volatile memory chip non-idealities by program pulse adjustment
09/29/2011US20110235427 Channel Hot Electron Injection Programming Method and Related Device
09/29/2011US20110235426 Flash memory system having a plurality of serially connected devices
09/29/2011US20110235425 Method of directly reading output voltage to determine data stored in a non-volatile memory cell
09/29/2011US20110235424 Hierarchical common source line structure in nand flash memory
09/29/2011US20110235423 Verification process for non-volatile storage
09/29/2011US20110235422 Apparatus having a string of memory cells
09/29/2011US20110235421 Nonvolatile semiconductor memory device
09/29/2011US20110235420 Simultaneous multi-state read or verify in non-volatile storage
09/29/2011US20110235419 Non-volatile semiconductor storage device
09/29/2011US20110235418 Determining memory page status
09/29/2011US20110235417 Nand flash memory
09/29/2011US20110235416 Nonvolatile semiconductor memory device
09/29/2011US20110235415 Read method for nonvolatile memory device, and data storage system using the same
09/29/2011US20110235414 Semiconductor memory device
09/29/2011US20110235413 Nonvolatile semiconductor memory device and method of controlling nonvolatile semiconductor memory device
09/29/2011US20110235412 Controlling ac disturbance while programming
09/29/2011US20110235411 Fast programming memory device
09/29/2011US20110235410 Device and method to read data subject to a disturb condition
09/29/2011US20110234856 Semiconductor device and control method of the same
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