Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
08/2014
08/05/2014US8797805 Methods and apparatuses for determining threshold voltage shift
08/05/2014US8797804 Vertical memory with body connection
08/05/2014US8797803 Methods, devices, and systems for adjusting sensing voltages in devices
08/05/2014US8797801 Non-volatile semiconductor memory device
08/05/2014US8797800 Select gate materials having different work functions in non-volatile memory
08/05/2014US8797799 Device selection schemes in multi chip package NAND flash memory system
08/05/2014US8797798 Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
08/05/2014US8797797 Non-volatile memory device, method for fabricating the same, and method for operating the same
08/05/2014US8797796 Cell operation monitoring
08/05/2014US8797795 Methods and apparatus for intercell interference mitigation using modulation coding
07/2014
07/31/2014WO2014116906A1 Recovery of nearby data in programming of non-volatile multi-level multiple memory die
07/31/2014WO2014116903A1 Non-volatile memory programming data preservation
07/31/2014WO2014116394A1 Storage control system with data management mechanism and method of operation thereof
07/31/2014US20140215128 Adaptive initial program voltage for non-volatile memory
07/31/2014US20140211569 Adjusting operational parameters for memory cells
07/31/2014US20140211568 Bit line current trip point modulation for reading nonvolatile storage elements
07/31/2014US20140211567 Low-Pin-Count Non-Volatile Memory Embedded in a Integrated Circuit without any Additional Pins for Access
07/31/2014US20140211566 Semiconductor memory device
07/31/2014US20140211565 Methods of programming multi-level cell nonvolatile memory devices and devices so operating
07/31/2014US20140211564 Level-estimation in multi-level cell memory
07/31/2014US20140211563 Hot carrier generation and programming in nand flash
07/31/2014US20140211562 Flash memory and associated programming method
07/31/2014US20140211561 Programming non-volatile storage system with multiple memory die
07/31/2014US20140211560 Semiconductor integrated circuit and nonvolatile semiconductor storage device
07/31/2014DE102014001142A1 System und Verfahren zur adaptiven Bitratenprogrammierung einer Speichervorrichtung System and method for adaptive bit rate programming of a memory device
07/31/2014DE102006034265B4 Verfahren zum Programmieren eines Flash-Speicherelements und Flash-Speicherelement Method for programming a flash memory device and flash memory element
07/30/2014EP2760027A1 Dynamic detection method for latent slow-to-erase bit for high performance and high reliability flash memory
07/30/2014EP2760026A1 Non-volatile semiconductor memory device
07/30/2014EP2758964A1 Flash memory system
07/30/2014EP2758963A1 On chip dynamic read for non-volatile storage
07/30/2014CN103959390A 反向偏置字线开关晶体管 Reverse biased word line switching transistor
07/30/2014CN103959386A 闪存模块和存储子系统 Flash memory modules and memory subsystems
07/30/2014CN103956187A 一种动态预充控制电路和闪存存储系统 A dynamic pre-charge control circuit and flash storage systems
07/30/2014CN103956186A 一种灵敏放大器和闪存存储装置 An amplifier and flash storage devices sensitive
07/30/2014CN103956185A 具有非易失性逻辑阵列备份相关应用的处理装置 Processing means having a non-volatile logic arrays backup-related applications
07/30/2014CN102569302B 非易失性叠层式与非门存储器及其制备方法 A stacked-type nonvolatile memory with a NAND gate and its preparation method
07/30/2014CN102332305B 非易失性可重编程存储器件 Reprogrammable non-volatile memory device
07/30/2014CN102272853B 用于通过对相邻干扰的流水线校正来感测非易失性存储器和方法 Used by a nonvolatile memory and a method of correction of a pipeline adjacent-channel interference is sensed
07/30/2014CN102063931B 闪烁存储器系统控制方案 Flash memory system control program
07/30/2014CN101123119B 使用选择性自升压编程操作的存储器件和方法 Self-boosting programming operation using selective memory device and method
07/29/2014USRE45051 Page buffer circuit of memory device and program method
07/29/2014US8793556 Systems and methods for reclaiming flash blocks of a flash drive
07/29/2014US8793430 Electronic system having memory with a physical block having a sector storing data and indicating a move status of another sector of the physical block
07/29/2014US8792283 Extended select gate lifetime
07/29/2014US8792282 Nonvolatile memory devices, memory systems and computing systems
07/29/2014US8792281 Read threshold estimation in analog memory cells using simultaneous multi-voltage sense
07/29/2014US8792280 Strings of memory cells having string select gates, memory devices incorporating such strings, and methods of accessing and forming the same
07/29/2014US8792279 Architectures for data analytics using computational NAND memory
07/29/2014US8792277 Split data error correction code circuits
07/29/2014US8792276 Semiconductor device with floating gate and electrically floating body
07/29/2014US8792274 Multi-level memory cell read, program, and erase techniques
07/29/2014US8792272 Implementing enhanced data partial-erase for multi-level cell (MLC) memory using threshold voltage-drift or resistance drift tolerant moving baseline memory data encoding
07/24/2014WO2014113726A1 Estimation of memory data
07/24/2014WO2014113588A1 Dynamic adjustment of read voltage levels based on memory cell threshold voltage distribution
07/24/2014WO2014113402A1 Systems and methods of updating read voltages
07/24/2014US20140204681 Semiconductor memory device and method of operating the same
07/24/2014US20140204680 Nonvolatile memory device, memory system having the same, external power controlling method thereof
07/24/2014US20140204679 Programming and/or erasing a memory device in response to its program and/or erase history
07/24/2014US20140204678 Dynamic detection method for latent slow-to-erase bit for high performance and high reliability flash memory
07/24/2014US20140204677 Apparatuses and methods including memory write operation
07/24/2014US20140204676 High voltage switch and a nonvolatile memory device including the same
07/24/2014US20140204675 Multi-page program method, non-volatile memory device using the same, and data storage system including the same
07/24/2014US20140204674 Line voltage boost system and method for non-volatile memory devices and memory devices and processor-based system using same
07/24/2014US20140204673 Flash memory module for realizing high reliability
07/24/2014US20140204672 Memory system
07/24/2014US20140204670 Semiconductor Memory Device Using Only Single-Channel Transistor to Apply Voltage to Selected Word Line
07/24/2014DE102014100217A1 Nichtflüchtige Speichervorrichtungen, Speichersysteme und damit zusammenhängende Steuerverfahren Non-volatile memory devices, storage systems, and related control method
07/24/2014DE102008008596B4 Arbeitsverfahren für eine integrierte Schaltung, integrierte Schaltungen und Verfahren zum Bestimmen eines Arbeitspunktes Working method for an integrated circuit, integrated circuits and methods for determining an operating point
07/24/2014DE102006035241B4 Nichtflüchtiges Speicherbauelement, Programmierverfahren und Speichersystem The non-volatile memory device programming method and storage system
07/23/2014EP2757562A2 Flash memory with BIAS voltage for word line/row driver
07/23/2014CN203733475U 一种具有读取自参考功能的2-1t1r rram 存储单元 A read from the reference function 2-1t1r rram storage unit has
07/23/2014CN103946923A 闪存系统 Flash System
07/23/2014CN103946819A 用于非易失性系统存储器的统计耗损均衡 For non-volatile system memory statistics wear-leveling
07/23/2014CN103943149A 非易失性存储器件、存储系统及其外部电源控制方法 Non-volatile memory device, the storage system and the external power supply control method
07/23/2014CN103943148A 闪速存储器及其复位信号输出方法 Flash memory and the reset signal output method
07/23/2014CN103943147A 使用温度传感器自适应软编程非易失存储器的系统及方法 Using a temperature sensor adaptive soft programming non-volatile memory system and method
07/23/2014CN103943146A 一种快速设定目标电压的装置和方法 An apparatus and method for quickly setting the target voltage
07/23/2014CN103943145A 用于减小非易失性存储器的尺寸的方法和系统 Method and system for reducing the size of the non-volatile memory
07/23/2014CN102332303B 用于快闪存储器的负电压电平转换电路 Negative voltage level conversion circuit for flash memory
07/23/2014CN102157196B 基于自参考反相器的1t1r型阻变存储器及其读写方法 1t1r type resistive memory based self-reference of the inverter and read and write methods
07/23/2014CN102150140B 存储器系统、控制存储器系统的方法和信息处理装置 Memory system, memory system control method and information processing device
07/23/2014CN102063930B 半导体集成电路 The semiconductor integrated circuit
07/23/2014CN102037518B 包括非易失性存储单元的电路及电子器件和电子器件形成工艺 Includes a nonvolatile memory cell circuits and electronic devices and electronic devices forming process
07/23/2014CN102034546B 存储器链路初始化 Memory Link initialization
07/23/2014CN101689395B 用于基于rf活动确定存储器刷新率的系统和方法 System and method for determining memory refresh rate rf-based activities for
07/22/2014US8788923 Methods and apparatus for soft demapping and intercell interference mitigation in flash memories
07/22/2014US8788743 Mapping between program states and data patterns
07/22/2014US8787109 Word line driver having a control switch
07/22/2014US8787107 Memory device power control
07/22/2014US8787094 Soft erase operation for 3D non-volatile memory with selective inhibiting of passed bits
07/22/2014US8787093 Semiconductor memory device and data write method thereof
07/22/2014US8787092 Programming inhibit method of nonvolatile memory apparatus for reducing leakage current
07/22/2014US8787091 Nonvolatile semiconductor memory device
07/22/2014US8787089 Semiconductor device and method of controlling the same
07/22/2014US8787087 Semiconductor memory device controlling operation timing of the sense circuit
07/22/2014US8787085 Semiconductor memory having both volatile and non-volatile functionality and method of operating
07/22/2014US8787082 Semiconductor memory device comprising three-dimensional memory cell array
07/22/2014US8787081 Data path for multi-level cell memory, methods for storing and methods for utilizing a memory array
07/22/2014US8787080 Selective re-programming of analog memory cells
07/22/2014US8787079 Reading data from multi-level cell memory
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