Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
12/2014
12/30/2014US8921922 Nonvolatile memory device and method for fabricating the same
12/25/2014US20140379967 Clock signal generator for a digital circuit
12/25/2014US20140376315 Semiconductor device and method of operating the same
12/25/2014US20140376314 Flash multiple-pass write with accurate first-pass write
12/25/2014US20140376313 Apparatuses and methods for limiting string current in a memory
12/25/2014US20140376312 Nonvolatile memory devices and methods of programming nonvolatile memory devices
12/25/2014US20140376311 Method and appratus for shortened erase option
12/25/2014US20140376310 Method of writing data in non-volatile memory device
12/24/2014CN204045210U 一种电可擦除可编程只读存储器阵列 An electrically erasable programmable read-only memory array
12/24/2014CN104246895A 用于低功率闪存存储器的电压模式感测 A flash memory for low power sensing voltage mode
12/24/2014CN104246894A 降低非易失性存储器单元中的编程干扰的方法 Reducing the non-volatile memory cell programming method of interference
12/24/2014CN104246893A Eprom单元 Eprom unit
12/24/2014CN104241526A 相变化存储器、其写入方法及其读取方法 Phase change memory write method and reading method
12/24/2014CN104241396A n沟道SONOS器件及其编译方法 n-channel devices and compilation methods SONOS
12/24/2014CN104240761A 固态储存装置中储存状态的分布曲线估计方法 Distribution curve stored in the solid-state storage device state estimation method
12/24/2014CN104240760A 包括非易失性存储器设备的存储器系统及其动态存取方法 Including non-volatile memory device and memory system dynamic access method
12/24/2014CN104240759A N通道半导体非易失性存储器的超低功率程序化方法 Ultra-low-power N-channel programmable method of semiconductor non-volatile memory
12/24/2014CN104240758A 数据储存装置及其管理方法 Data storage devices and management methods
12/24/2014CN104240757A 一种阻变存储器存储单元的多值操作方法 A multi-value method of operation of the resistive memory cell
12/24/2014CN104240756A 控制装置及存取系统 Control device and access system
12/24/2014CN104240748A 数据信号的过取样方法及其过取样装置 The method of oversampled data signal and oversampling means
12/24/2014CN102568576B 一种快闪存储器的操作方法 Method of operating a flash memory
12/24/2014CN102339644B 存储器及其操作方法 Memory and operating method
12/24/2014CN102243894B 用于存储器的字线驱动器 Word line driver for the memory
12/24/2014CN102210022B 包括多个封装的半导体芯片的固态驱动器或者其它存储装置 Includes a plurality of encapsulated solid state drive of the semiconductor chip or other memory device
12/24/2014CN101421793B Nand存储器装置列充电 Nand memory device charging column
12/23/2014US8918655 Data whitening for writing and reading data to and from a non-volatile memory
12/23/2014US8918584 Refresh algorithm for memories
12/23/2014US8917558 Nonvolatile memory devices, operating methods thereof and memory systems including the same
12/23/2014US8917557 Nonvolatile semiconductor memory device
12/23/2014US8917556 Nonvolatile memory device having 3D memory cell array and read method
12/23/2014US8917555 Semiconductor device and operating method thereof
12/23/2014US8917554 Back-biasing word line switch transistors
12/23/2014US8917553 Non-volatile memory programming
12/23/2014US8917552 Nonvolatile semiconductor storage device
12/23/2014US8917551 Flexible 2T-based fuzzy and certain matching arrays
12/23/2014US8917550 Apparatus comparing verified data to original data in the programming of memory cells
12/23/2014US8917549 NOR flash memory array structure, mixed nonvolatile flash memory and memory system comprising the same
12/23/2014US8917548 Non-volatile semiconductor memory device
12/23/2014US8917534 Path isolation in a memory device
12/23/2014US8916926 Nonvolatile memory device and method of making the same
12/23/2014US8916921 Non-volatile semiconductor storage device including a dielectric with low permittivity in memory cells arranged in a three dimensional manner
12/18/2014US20140369136 Systems and methods for providing high voltage to memory devices
12/18/2014US20140369135 Ultra-Low Power Programming Method for N-Channel Semiconductor Non-Volatile Memory
12/18/2014US20140369134 Semiconductor memory device and method of operating the same
12/18/2014US20140369133 Semiconductor memory device, memory system including the same, and operating method thereof
12/18/2014US20140369132 Differential current sense amplifier and method for non-volatile memory
12/18/2014US20140369131 Method of operating semiconductor device
12/18/2014US20140369130 Local self-boost using a plurality of cut-off cells on a single side of a string of memory cells
12/18/2014US20140369129 Method And Apparatus For Program And Erase Of Select Gate Transistors
12/18/2014US20140369128 Semiconductor memory device and operation method thereof
12/18/2014US20140369127 Semiconductor memory device
12/18/2014US20140369126 Simplified nonvolatile memory cell string and nand flash memory array using the same
12/18/2014US20140369125 Semiconductor device, data programming device, and method for improving the recovery of bit lines of unselected memory cells for programming operation
12/18/2014US20140369124 Memory systems including nonvolatile memory devices and dynamic access methods thereof
12/18/2014US20140369123 Pseudo block operation mode in 3d nand
12/18/2014US20140369122 Pseudo block operation mode in 3d nand
12/18/2014US20140369121 Semiconductor device
12/18/2014US20140369119 Compact Memory Device including a SRAM Memory Plane and a Non Volatile Memory Plane, and Operating Methods
12/18/2014US20140369118 Configuring storage cells
12/18/2014US20140369117 Multiple step programming in a memory device
12/18/2014US20140369116 Shielded vertically stacked data line architecture for memory
12/17/2014CN204029386U 一种动态预充控制电路和闪存存储系统 A dynamic pre-charge control circuit and flash storage systems
12/17/2014CN104221091A 适应性地程序化或抹除闪存区块 Adaptively programmed or erased flash memory block
12/17/2014CN104217762A 数据储存装置及其错误校正方法以及数据读取方法 Data storage means and the error correction method and data reading method
12/17/2014CN104217761A 数据储存装置及其错误校正方法 Data storage device and error correction method
12/17/2014CN104217760A 闪存的配置方法 Flash memory configuration
12/17/2014CN104217759A 非易失性存储装置、其操作方法及包括其的系统 Nonvolatile memory device, and its method of operation of the system, including its
12/17/2014CN104217758A 非易失性存储器件 Non-volatile memory device
12/17/2014CN104217757A 非易失性存储器的编程方法 Programming non-volatile memory
12/17/2014CN104217756A 用于在可调整地可分割存储器阵列中存储数据的系统和方法 For adjustably divisible memory array systems and methods for storing data
12/17/2014CN104217755A 数据传送电路和包括数据传送电路的存储器 Data transfer circuit and the data transfer circuit comprises a memory
12/17/2014CN104217754A 干扰减轻的快闪存储器和擦除方法 Interference mitigation and erasing flash memory
12/17/2014CN104216665A 多层单元固态硬盘的存储管理方法 MLC SSD storage management
12/17/2014CN102549673B 用较小通道电压干扰和浮栅极到控制栅极泄漏对存储器编程 With a smaller channel interference and the floating gate voltage to the control gate leakage memory programming
12/17/2014CN102420014B 半导体存储设备 Semiconductor memory device
12/17/2014CN102339641B 检错/纠错校验模块及该模块读写数据的方法 The method of error detection / correction calibration module and the module to read and write data
12/17/2014CN102280141B 一种闪速存储器芯片编程方法及装置 One kind of flash memory chip programming method and apparatus
12/17/2014CN102222525B 半导体存储器 Semiconductor memory
12/17/2014CN102044297B 储存装置及其运作方法 Storage device and method of operation
12/17/2014CN101833993B 扩大存储单元操作区间的方法及应用其的非挥发存储器阵列 Expand the storage unit operating range and its application of its non-volatile memory array
12/17/2014CN101814319B 非易失性存储设备以及含有此设备的存储系统 Non-volatile storage devices and storage systems containing this device
12/16/2014US8914572 Memory controllers and memory systems including the same
12/16/2014US8914569 Flash memory apparatus with serial interface and reset method thereof
12/16/2014US8913453 Semiconductor device and method of operating the same
12/16/2014US8913450 Memory cell array with reserved sector for storing configuration information
12/16/2014US8913446 Nonvolatile semiconductor memory device
12/16/2014US8913442 Circuit for sensing MLC flash memory
12/16/2014US8913439 Memory device and corresponding reading method
12/16/2014US8913438 Adaptive architecture in a channel detector for NAND flash channels
12/16/2014US8913437 Inter-cell interference cancellation
12/16/2014US8913436 Non-volatile memory (NVM) with word line driver/decoder using a charge pump voltage
12/16/2014US8913435 Method and device for programming data into non-volatile memories
12/16/2014US8913434 Non-volatile memory device and method for driving the same
12/16/2014US8913433 Nonvolatile memory devices, read methods thereof and memory systems including the nonvolatile memory devices
12/16/2014US8913432 Programming select gate transistors and memory cells using dynamic verify level
12/16/2014US8913431 Pseudo block operation mode in 3D NAND
12/16/2014US8913430 Non-volatile memory device
12/16/2014US8913429 Nonvolatile semiconductor memory device
12/16/2014US8913428 Programming non-volatile storage system with multiple memory die
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