Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
05/2014
05/15/2014US20140133239 Memory devices having select gates with p type bodies, memory strings having separate source lines and methods
05/15/2014US20140133238 Method and system for programming non-volatile memory with junctionless cells
05/15/2014US20140133236 Hierarchical common source line structure in nand flash memory
05/15/2014US20140133235 Non-volatile memory device having configurable page size
05/15/2014US20140133234 Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
05/15/2014US20140133232 Compensation for Sub-Block Erase
05/15/2014US20140133231 Bit line resistance compensation
05/15/2014US20140133230 Bit line resistance compensation
05/15/2014US20140133229 Bit line resistance compensation
05/15/2014US20140133228 Key-Value Addressed Storage Drive Using NAND Flash Based Content Addressable Memory
05/15/2014US20140133227 Non-volatile memory device and method of operating
05/15/2014US20140133226 Erasing physical memory blocks of non-volatile memory
05/15/2014US20140133224 Architecture and method for memory programming
05/15/2014US20140133223 Memory semiconductor device and method of operating the same
05/15/2014DE10262374B4 System zur Erzeugung und Verteilung von Versorgungsspannungen in Speichersystemen A system for generation and distribution of supply voltages in memory systems
05/15/2014DE102007019825B4 Integrierte Schaltung Integrated circuit
05/15/2014DE10049104B4 Hochgeschwindigkeits-Adressfolgesteuerungsgerät High-address sequence control device
05/14/2014EP2729935A2 Devices and methods of programming memory cells
05/14/2014CN203596179U 一种铝壳高速稳定保护耐用u 盘烧录器 One kind of high-speed stability protection and durable aluminum u disk burner
05/14/2014CN103797541A 存储器装置及用于存储器装置的配置方法 Configuration memory device and a memory device for
05/14/2014CN103797540A 采用被分解为多遍的阶梯波形的编程算法 Is decomposed into multiple passes using a staircase waveform programming algorithms
05/14/2014CN103797537A 多装置存储器串联架构 Multi-device memory series architecture
05/14/2014CN103794720A 具有双栅极垂直选择器件的三维非易失性存储器 Has a double gate vertical selection of three-dimensional non-volatile memory device
05/14/2014CN103794609A 非挥发性内存单元及非挥发性内存矩阵 Non-volatile memory cell and non-volatile memory matrix
05/14/2014CN103794252A 用于读出放大器的低电压电流参考产生器 Referring to the read amplifier for a low voltage current generator
05/14/2014CN103794251A 一种快闪存储器的擦除方法和装置 A method and apparatus for erasing flash memory
05/14/2014CN103794250A 一种存储单元的操作方法及具有该存储单元的集成电路 A method of operating an integrated circuit having a storage unit and the storage unit
05/14/2014CN103794249A 用于改进升压箝位的对位线编程 Boost for improving the clamp on the bit line programming
05/14/2014CN103794248A 多栅极存储器的控制栅极字线驱动器电路 Word line control gate driver circuit of the multi-gate memory
05/14/2014CN103794247A 使用可变电阻材料的非易失性存储器装置 A nonvolatile memory device using a variable resistance material
05/14/2014CN103794246A Mtp存储单元 Mtp storage unit
05/14/2014CN103792479A 电路板的测试及录入系统 Circuit board testing and entry system
05/14/2014CN102479546B 一种对电阻存储器进行编程的电路 Kind of resistance memory programming circuit
05/14/2014CN102314943B 非挥发性记忆体及其制造方法 Non-volatile memory and manufacturing method
05/14/2014CN102237136B 使用在一存储装置的存储子单元抹除方法 A memory device for use in a memory sub-unit wiping methods
05/14/2014CN102203874B 以高分辨率可变初始编程脉冲对非易失性存储器编程 High resolution variable initial programming pulse programming non-volatile memory
05/14/2014CN102142280B 存储器编程的放电电路 Memory programming discharge circuit
05/14/2014CN101727986B 非易失性存储设备及其编程方法和预充电电压提升方法 Non-volatile memory device and programming methods and pre-charge voltage boost method
05/14/2014CN101577309B 应用于电阻式随机存取存储器的电脉冲电压操作方法 An electrical pulse voltage operation method is applied to a resistive random access memory
05/14/2014CN101546602B 使用可变电阻元件的非易失性存储器设备 Using the variable resistor element is a nonvolatile memory device
05/13/2014US8726130 Dynamic buffer management in a NAND memory controller to minimize age related performance degradation due to error correction
05/13/2014US8724424 Semiconductor memory device using only single-channel transistor to apply voltage to selected word line
05/13/2014US8724400 Memory device and system with improved erase operation
05/13/2014US8724399 Methods and systems for erase biasing of split-gate non-volatile memory cells
05/13/2014US8724398 Non-volatile semiconductor device, and method of operating the same
05/13/2014US8724397 Non-volatile semiconductor memory device and method of reading data thereof
05/13/2014US8724396 Semiconductor memory device
05/13/2014US8724393 Thermally assisted flash memory with diode strapping
05/13/2014US8724392 Controller management of memory array of storage device using magnetic random access memory (MRAM)
05/13/2014US8724391 Semiconductor memory device
05/13/2014US8724389 Non-volatile solid state memory-based mass storage device and methods thereof
05/13/2014US8724388 Adaptively programming or erasing flash memory blocks
05/13/2014US8724385 Semiconductor device
05/13/2014US8724384 Multiple-bit per cell (MBC) non-volatile memory apparatus and system having polarity control and method of programming same
05/13/2014US8724382 Multiple-bit per cell (MBC) non-volatile memory apparatus and system having polarity control and method of programming same
05/13/2014US8724374 Data-dependent pullup transistor supply and body bias voltage application for a static random access memory (SRAM) cell
05/13/2014CA2489637C Electronic data processing device
05/08/2014WO2014070366A1 Low voltage current reference generator for a sensing amplifier
05/08/2014WO2014070251A1 Center read reference voltage determination based on estimated probability density function
05/08/2014WO2014066987A1 Flash memory controller having multimode pin-out
05/08/2014WO2013188387A3 Apparatuses and methods to modify pillar potential
05/08/2014US20140129903 Method of operating memory device
05/08/2014US20140129902 Apparatus and method of operating memory device
05/08/2014US20140126299 Semiconductor device and method of manufacturing the same
05/08/2014US20140126298 Semiconductor memory device and method of operating the same
05/08/2014US20140126297 Access line management in a memory device
05/08/2014US20140126296 Flash memory device and programming method thereof
05/08/2014US20140126295 Apparatuses and methods of reprogramming memory cells
05/08/2014US20140126294 Updating reference voltages to compensate for changes in threshold voltage distributions of nonvolatile memory cells
05/08/2014US20140126293 Centralized Variable Rate Serializer and Deserializer for Bad Column Management
05/08/2014US20140126292 Flash Memory with Data Retention Bias
05/08/2014US20140126291 3d stacked non-volatile storage programming to conductive state
05/08/2014US20140126290 Memory arrays with a memory cell adjacent to a smaller size of a pillar having a greater channel length than a memory cell adjacent to a larger size of the pillar and methods
05/08/2014US20140126289 Methods And Apparatus For Storing Data In A Multi-Level Cell Flash Memory Device With Cross-Page Sectors, Multi-Page Coding And Per-Page Coding
05/08/2014US20140126288 Methods And Apparatus For Storing Data In A Multi-Level Cell Flash Memory Device With Cross-Page Sectors, Multi-Page Coding And Per-Page Coding
05/08/2014US20140126287 Methods And Apparatus For Storing Data In A Multi-Level Cell Flash Memory Device With Cross-Page Sectors, Multi-Page Coding And Per-Page Coding
05/08/2014US20140126286 Single-level cell endurance improvement with pre-defined blocks
05/08/2014US20140126285 Semiconductor memory device and operating method thereof
05/07/2014EP2728582A1 Control gate word line driver circuit for multigate memory
05/07/2014EP2727112A1 Sensing circuit
05/07/2014CN203588697U 改进的存储器 Improved memory
05/07/2014CN103782344A 包含源极栅极的设备及方法 A gate electrode comprising a source apparatus and methods
05/07/2014CN103782266A 针对存储器持久性操作的设备及方法 Apparatus and method for memory persistence operations
05/07/2014CN103778964A 一种NAND Flash烧写数据的处理、使用方法及装置、系统 Processing method and apparatus for using NAND Flash programming data, the system
05/07/2014CN103778963A 扩展显示辨识数据刻录方法与显示装置 Extended Display Identification Data Burning Method and display devices
05/07/2014CN103778962A 使用回归分析的半导体存储系统及其读取方法 Regression using a semiconductor memory system and the read method
05/07/2014CN103778961A 基于存储在待编程存储单元中的数据来编码编程数据 Based on the data stored in the storage unit to be programmed to encode programming data
05/07/2014CN103778960A 用于电阻型存储器的感测放大器中的写驱动器 For the resistive memory, the write sense amplifier drive
05/07/2014CN103778959A 数据存储设备、控制器以及数据存储设备的操作方法 Operation data storage device, the data storage device controller, and
05/07/2014CN103778958A 控制非易失性存储器件的控制器以及控制器的操作方法 The method of controlling operation of a nonvolatile memory device controller and the controller
05/07/2014CN102412207B 电子可擦除可编程只读存储器单元 Electronically erasable programmable read-only memory cell
05/07/2014CN102231285B 数据存储方法和装置 The data storage method and apparatus
05/07/2014CN102194524B 非易失性半导体存储装置 The nonvolatile semiconductor memory device
05/07/2014CN102005246B 只读存储器布局方法与系统 Method and system for read-only memory layout
05/07/2014CN101916591B 半导体集成电路器件 The semiconductor integrated circuit device
05/07/2014CN101911207B 半导体存储装置、控制装置、控制方法 The semiconductor memory device, the control device, the control method
05/07/2014CN101882467B Ecc参数可配置的存储器控制装置 Ecc parameters configurable memory controller
05/07/2014CN101861623B 编程期间偏置相邻字线以验证的非易失性存储器和方法 The method of biasing a nonvolatile memory and an adjacent word line during programming to verify the
05/07/2014CN101650971B 非易失性半导体存储电路 The nonvolatile semiconductor memory circuit
05/07/2014CN101414483B 用于非易失性存储器的编程和擦除方法 Programming and erasing method for a nonvolatile memory
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