Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
08/2014
08/14/2014US20140226413 Non-Volatile Buffering to Enable Sloppy Writes and Fast Write Verification
08/14/2014US20140226412 Data writing method, and memory control circuit unit and memory storage apparatus using the same
08/14/2014US20140226411 Method of programming flash memory
08/14/2014US20140226410 Semiconductor integrated circuit adapted to output pass/fail results of internal operations
08/14/2014US20140226409 Mixed Voltage Non-volatile Memory Integrated Circuit With Power Saving
08/14/2014US20140226408 Nonvolatile memory device
08/14/2014US20140226407 Nonvolatile semiconductor memory device
08/14/2014US20140226406 Efficient Smart Verify Method For Programming 3D Non-Volatile Memory
08/14/2014US20140226405 Bit line resistance compensation
08/14/2014US20140226404 Memory system performing multi-step erase operation based on stored metadata
08/14/2014US20140226403 Memory system and method of driving memory system using zone voltages
08/14/2014US20140226402 Fast-Reading NAND Flash Memory
08/14/2014US20140226401 Memory device and semiconductor device
08/14/2014US20140226400 Semiconductor device
08/14/2014US20140226399 System and method for reading memory cells by accounting for inter-cell interference
08/14/2014US20140226398 Systems and methods to update reference voltages of non-volatile memory
08/14/2014US20140226397 Nonvolatile memory device and control method thereof
08/14/2014US20140225582 Voltage generation circuit which is capable of executing high-speed boost operation
08/13/2014EP2765578A1 Retention-drift-history-based non-volatile memory read threshold optimization
08/13/2014EP2764516A1 Self-journaling and hierarchical consistency for non-volatile storage
08/13/2014CN103988262A 串行连接的装置中的独立的写和读控制 Device serial connection of separate write and read control
08/13/2014CN103985415A 基于保留漂移历史的非易失性存储器读取阈值最优化 Reads the history of the threshold value based on the retention drift nonvolatile memory optimization
08/13/2014CN103985414A 一种克服非易失性存储器Erase Stress影响的方法和电路 One way to overcome the impact of non-volatile memory Erase Stress Method and circuit
08/13/2014CN103985413A 半导体芯片 Semiconductor chip
08/13/2014CN103985412A 用于对具有耦合到控制器的存储器阵列的固态存储器装置进行操作的方法 The method of solid state memory device having a memory array coupled to the controller for operating the
08/13/2014CN103985411A 待调度验证的非易失性写入缓冲器数据保留 Scheduled to be written into the buffer to verify the non-volatile data retention
08/13/2014CN103985410A 一种存储装置及用于存储装置的数据访问方法 A storage device and a data storage device access method for
08/13/2014CN103984509A 异构nand型固态硬盘及提高其性能的方法 Heterogeneous nand-type SSDs and improve the performance of the method
08/13/2014CN102446550B 一种异步存储器跟踪计时的方法和装置 Method and apparatus for tracking the timing of asynchronous memory
08/13/2014CN102376368B 对快闪存储器系统中递进读取的最优参考电压的确定 Progression of the flash memory system is read to determine the optimum reference voltage
08/13/2014CN102314942B 非挥发性记忆体及其操作方法 Non-volatile memory and method of operation
08/13/2014CN101714576B 半导体装置及其制造方法和操作方法 Semiconductor device and manufacturing method and method of operation
08/13/2014CN101627436B 用于最小化闪存存储器nand串中编程干扰的方法 A method for minimizing the nand flash memory program disturb string
08/12/2014US8804436 Method of partial refresh during erase operation
08/12/2014US8804433 Semiconductor memory device and operating method thereof
08/12/2014US8804432 Sensing for all bit line architecture in a memory device
08/12/2014US8804430 Selected word line dependent select gate diffusion region voltage during programming
08/12/2014US8804429 Non-volatile memory device and a method of programming such device
08/12/2014US8804428 Determining system lifetime characteristics
08/12/2014US8804427 Nonvolatile semiconductor memory device
08/12/2014US8804426 Methods of operating semiconductor device
08/12/2014US8804425 Selected word line dependent programming voltage
08/12/2014US8804423 Multi-bit-per-cell flash memory device with non-bijective mapping
08/12/2014US8804422 Nonvolatile memory device and related method of operation
08/12/2014US8804421 Center read reference voltage determination based on estimated probability density function
08/12/2014US8804420 Semiconductor memory device
08/12/2014US8804418 Low overhead read disturbance protection method for NAND flash device
08/12/2014US8804417 Nonvolatile memory device including dummy memory cell and program method thereof
08/12/2014US8804416 Memory devices having select gates with p type bodies, memory strings having separate source lines and methods
08/12/2014US8804415 Adaptive voltage range management in non-volatile memory
08/12/2014US8804396 Semiconductor device
08/07/2014WO2014120943A1 Adaptive initial program voltage for non-volatile memory
08/07/2014WO2014120193A1 Non-volatile multi-level-cell memory with decoupled bits for higher performance and energy efficiency
08/07/2014US20140223231 Solid state drive management in power loss recovery
08/07/2014US20140219035 Semiconductor memory device
08/07/2014US20140219034 Non-Volatile Write Buffer Data Retention Pending Scheduled Verification
08/07/2014US20140219033 Flash multiple-pass write with accurate first-pass write
08/07/2014US20140219032 Methods for programming a memory device and memory devices
08/07/2014US20140219031 Smart bridge for memory core
08/07/2014US20140219030 High Density Vertical Structure Nitride Flash Memory
08/07/2014US20140219029 Programming method for nonvolatile semiconductor memory device
08/07/2014US20140219028 Compensation Loop for Read Voltage Adaptation
08/07/2014US20140219027 Programming Select Gate Transistors And Memory Cells Using Dynamic Verify Level
08/07/2014US20140219026 Method and apparatus for leakage suppression in flash memory in response to external commands
08/07/2014US20140219025 Program and read methods of memory devices using bit line sharing
08/07/2014US20140219024 Nonvolatile semiconductor memory device
08/07/2014US20140219023 Bad Column Management with Bit Information in Non-Volatile Memory Systems
08/07/2014US20140219022 Smart bridge for memory core
08/07/2014US20140219020 Memory system comprising nonvolatile memory device and program method thereof
08/07/2014US20140219019 Solid state drive and data erasing method thereof
08/07/2014US20140219018 Non-volatile memory device
08/07/2014US20140218436 Circuit that selects eproms individually and in parallel
08/07/2014DE102014101267A1 Speichersystem mit nichtflüchtiger Speichervorrichtung und Programmierverfahren davon Storage system with non-volatile memory device and programming method thereof
08/06/2014EP2763140A2 Compensation loop for read voltage adaptation in flash memory
08/06/2014EP2761471A1 Statistical wear leveling for non-volatile system memory
08/06/2014CN203760476U 半导体器件 Semiconductor devices
08/06/2014CN203760085U 一种eeprom编程器 One kind of eeprom programmer
08/06/2014CN103975391A 生成替换默认读取阈值的系统和方法 Generation system and method to replace the default read threshold
08/06/2014CN103973201A 具共享脚位的马达控制器与相关控制方法 A shared pin motor controller and associated control method
08/06/2014CN103971746A 固态存储装置及其数据擦除方法 Solid state storage device and data erasure method
08/06/2014CN103971745A 具有减少的漏电流的闪存编程及验证 Flash programming and verification with reduced leakage current
08/06/2014CN103971744A 信息处理方法、信息处理装置和存储介质 Information processing method, information processing apparatus and the storage medium
08/06/2014CN103971743A 反及闪存及其热载子生成和写入方法 Anti and flash their hot carrier generation and write methods
08/06/2014CN103971742A 具有内建测试驱动器的非易失性逻辑阵列 Has a built-in test drive nonvolatile logic arrays
08/06/2014CN103971741A 非易失性位单元阵列中的信号电平转换 Nonvolatile bit cell array signal level conversion
08/06/2014CN103971740A 两个电容器自参考的非易失性位单元 Two capacitors from the reference nonvolatile bit cell
08/06/2014CN103971739A 包括非易失性存储设备的存储系统及其编程方法 Includes a non-volatile memory storage system and programming device
08/06/2014CN103971738A 用于存储装置的自适应比特率编程的系统和方法 Means for storing an adaptive bit rate programming system and method
08/06/2014CN103971737A 闪存及其相关程划方法 Planning methods and related flash drive
08/06/2014CN103971736A 编程分栅位单元 Programming sub-gate-bit units
08/06/2014CN103971735A 非易失性半导体存储装置以及半导体装置 Nonvolatile semiconductor memory device and semiconductor device
08/06/2014CN102063940B 非易失存储器和存储系统 Non-volatile memory and storage system
08/06/2014CN101868831B 支持速率兼容经穿孔码的存储器控制器 Support rate-compatible punctured code through a memory controller
08/06/2014CN101739584B 半导体器件 Semiconductor devices
08/06/2014CN101308876B 存储器结构及其操作方法 Memory structure and method of operation
08/05/2014US8799725 Macro and command execution from memory array
08/05/2014US8799704 Semiconductor memory component having a diverting circuit
08/05/2014US8799556 Adaptive read and write systems and methods for memory cells
08/05/2014US8797807 Semiconductor memory and semiconductor memory control method
08/05/2014US8797806 Apparatus and methods including source gates
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