Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
06/2014
06/11/2014CN101751997B Flash memory device and program/erase method of the same
06/11/2014CN101751994B Nonvolatile semiconductor memory device having uniform operational characteristics for memory cells
06/10/2014US8751727 Storage apparatus and storage system
06/10/2014US8750052 Semiconductor storage device
06/10/2014US8750051 Systems and methods for providing high voltage to memory devices
06/10/2014US8750050 Nonvolatile semiconductor memory device and programming method
06/10/2014US8750048 Memory device and method for operating the same
06/10/2014US8750047 Circuit for reading non-volatile memory cells having a precharging circuit activated after the activation of a sense circuit
06/10/2014US8750046 Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
06/10/2014US8750045 Experience count dependent program algorithm for flash memory
06/10/2014US8750044 Three-dimensional nonvolatile memory devices
06/10/2014US8750043 Data storage device and control method for non-volatile memory
06/10/2014US8750041 Scalable electrically erasable and programmable memory
06/10/2014US8750040 Memory devices having source lines directly coupled to body regions and methods
06/10/2014US8750039 Nonvolatile semiconductor memory
06/10/2014US8750037 Non-volatile memory utilizing impact ionization and tunnelling and method of manufacturing thereof
06/05/2014WO2014085257A1 Adaption of memory operation parameters according to predicted variations in cell dimension
06/05/2014WO2014083997A1 Non-volatile semiconductor storage device
06/05/2014US20140157090 Programming Schemes for Multi-Level Analog Memory Cells
06/05/2014US20140153340 Method for erasing charge trap devices
06/05/2014US20140153339 Nonvolatile memory device having selectable sensing modes, memory system having the same and programming method thereof
06/05/2014US20140153338 Memory system and method of operating memory system using soft read voltages
06/05/2014US20140153337 Semiconductor memory device
06/05/2014US20140153336 Semiconductor memory device having a plurality of chips and capability of outputting a busy signal
06/05/2014US20140153335 Asynchronous/synchronous interface
06/05/2014US20140153334 Termination for complementary signals
06/05/2014US20140153333 Systems and Methods to Avoid False Verify and False Read
06/05/2014US20140153331 Multi-level cell memory device and operating method thereof
06/05/2014US20140153330 Method for operating non-volatile memory device and memory controller
06/05/2014US20140153329 Nonvolatile memory device comprising page buffer and operation method thereof
06/05/2014DE102013112897A1 Nichtflüchtiger Speicher und Verfahren zum Betreiben eines nichtflüchtigen Speichers The nonvolatile memory and method of operating a non-volatile memory
06/04/2014EP2737489A2 Determining and transferring data from a memory array
06/04/2014EP2737488A2 Post-write read in non-volatile memories using comparison of data as written in binary and multi-state formats
06/04/2014EP2737487A1 Simultaneous sensing of multiple wordlines and detection of nand failures
06/04/2014CN1836288B Read bias scheme for phase change memories
06/04/2014CN103843069A Memory refresh methods and apparatuses
06/04/2014CN103843068A Threshold voltage compensation in a memory
06/04/2014CN103843067A On chip dynamic read for non-volatile storage
06/04/2014CN103842974A Method of managing the endurance of non-volatile memories
06/04/2014CN103839588A Voltage stabilizer and control method thereof as well as storage device
06/04/2014CN103839587A Electric erasable programmable read-only memory and operating method
06/04/2014CN103839586A Method for regulating erasing voltage of nonvolatile memory
06/04/2014CN103839585A 2-1T1R (2-1transistor1resistor) RRAM (resistive random access memory) unit with reading self-reference function
06/04/2014CN103839584A Semiconductor memory device, memory system including the same and operating method thereof
06/04/2014CN103839583A Interconnection matrix using semiconductor non-volatile memory
06/04/2014CN103839582A System and method for burning and reading on circuit board through boundary scan
06/04/2014CN102646790B Non-volatile memory
06/04/2014CN102394106B Programmable double-level converter based on phase change storage unit and implementation method thereof
06/04/2014CN102308017B Method of forming memory cell using gas cluster ion beams
06/04/2014CN101714409B Non-volatile memory and control with improved partial page program capability
06/04/2014CN101438352B Flash memory programming and verification with reduced leakage current
06/03/2014US8745322 Management of non-volatile memory systems having large erase blocks
06/03/2014US8743625 Semiconductor integrated circuit adapted to output pass/fail results of internal operations
06/03/2014US8743624 Programming and selectively erasing non-volatile storage
06/03/2014US8743623 Apparatus and methods of bit line setup
06/03/2014US8743622 Memory devices and programming methods that program a memory cell with a data value, read the data value from the memory cell and reprogram the memory cell with the read data value
06/03/2014US8743621 Operating method in a non-volatile memory device
06/03/2014US8743620 Nonvolatile memory device and program verify method thereof
06/03/2014US8743619 Methods of reading memory cells
06/03/2014US8743618 Bit line resistance compensation
06/03/2014US8743615 Read compensation for partially programmed blocks of non-volatile storage
06/03/2014US8743613 Timing control in synchronous memory data transfer
06/03/2014US8743612 Three-dimensional non-volatile memory device
06/03/2014US8743610 Method and system for accessing a flash memory device
06/03/2014US8743609 Method and apparatus for increasing data retention capability of a non-volatile memory
06/03/2014US8743607 Semiconductor memory device for storing multivalued data
06/03/2014US8743605 High-resolution readout of analog memory cells
06/03/2014US8742838 Stacked structure with a voltage boosting supply circuit
05/2014
05/30/2014WO2014081719A1 Solid state drive architectures
05/30/2014WO2014081572A1 Fast secure erasure schemes for non-volatile memory
05/30/2014WO2014079176A1 Memory with multiple selectable specification grades and operating method thereof
05/29/2014US20140149648 Memory system with user configurable density/performance option
05/29/2014US20140146617 Nonvolatile semiconductor memory
05/29/2014US20140146616 Matching semiconductor circuits
05/29/2014US20140146615 Method for Reading Data Stored in a Flash Memory According to a Threshold Voltage Distribution and Memory Controller and System Thereof
05/29/2014US20140146614 Memory device having three-dimensional gate structure
05/29/2014US20140146613 Operating method of memory having redundancy circuitry
05/29/2014US20140146612 Three dimensional memory control circuitry
05/29/2014US20140146611 Memory device and method for programming memory cell of memory device
05/29/2014US20140146610 Memory and operation method thereof
05/29/2014US20140146609 Weighted Read Scrub For Nonvolatile Memory
05/29/2014US20140146608 Oscillator Circuit With Location-Based Charge Pump Enable And Semiconductor Memory Including The Same
05/29/2014US20140146607 Semiconductor memory device for pseudo-random number generation
05/29/2014US20140146606 Parallel bitline nonvolatile memory employing channel-based processing technology
05/29/2014US20140146605 Refresh method for flash memory and related memory controller thereof
05/29/2014US20140146604 Partial Voltage Read of Memory
05/28/2014CN103827972A 用于读取阵列中的电阻开关器件的电路和方法 Circuit and a method for reading the resistance of the switching device array for
05/28/2014CN103824597A 存储器、存储单元的读取电路及读取方法 A memory, the memory cell reading circuit and reading method
05/28/2014CN103824596A 非易失性半导体存储器装置以及其中的数据读取方法 The nonvolatile semiconductor memory device and data read method in which
05/28/2014CN103824595A 烧录器 Burner
05/28/2014CN103824594A 现场可编程门阵列及其开关结构 A field programmable gate array and switch structure
05/28/2014CN103824593A 闪存单元的操作方法 Method of operation of the flash unit
05/28/2014CN103824592A 使用模数转换器的非易失性存储器强健启动 Non-volatile memory using the ADC to start strong
05/28/2014CN102117657B Eeprom的读取电路 Eeprom read circuit
05/28/2014CN102103888B 用于相变存储器的电压控制电路 The voltage for the phase change memory control circuit
05/28/2014CN102099865B 用于在闪存存储器中每信号电平编程多个编程值的方法和装置 Method and apparatus for programming a plurality of signal levels in each of the programmed value for the flash memory
05/28/2014CN101868832B 用于从快闪存储器读取数据的方法及设备 Method and apparatus for reading data from the flash memory
05/28/2014CN101849264B 响应于降级控制存储器装置 A memory device in response to the downgrade control
05/28/2014CN101661992B 相变存储单元器件的复合电极结构 Phase change storage unit composite electrode structure components
05/28/2014CN101447229B 集成电路闪存器件及其擦除方法 IC flash memory device and erasing method
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