Patents for G11C 16 - Erasable programmable read-only memories (44,373) |
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07/08/2014 | US8773902 Channel boosting using secondary neighbor channel coupling in non-volatile memory |
07/08/2014 | CA2636237C Method and apparatus for recording high-speed input data into a matrix of memory devices |
07/03/2014 | WO2014105929A1 Flash memory interface using split bus configuration |
07/03/2014 | WO2014105262A1 Clock generation and delay architecture |
07/03/2014 | WO2014103241A1 Non-volatile semiconductor storage device |
07/03/2014 | WO2014074496A3 Cam nand with or function and full chip search capability |
07/03/2014 | WO2014074483A3 On-device data analytics using nand flash based intelligent memory |
07/03/2014 | US20140189465 Methods, devices, and systems for data sensing |
07/03/2014 | US20140189221 Semiconductor storage device and method of controlling the same |
07/03/2014 | US20140185388 Dynamic drive strength optimization |
07/03/2014 | US20140185387 Semiconductor memory device and method of operating the same |
07/03/2014 | US20140185386 Reliability Metrics Management for Soft Decoding |
07/03/2014 | US20140185385 Memories and methods of programming memories |
07/03/2014 | US20140185384 Nonvolatile memory devices including simultaneous impedance calibration |
07/03/2014 | US20140185383 Semiconductor memory device |
07/03/2014 | US20140185382 Erase for non-volatile storage |
07/03/2014 | US20140185381 Semiconductor apparatus and method of operating the same |
07/03/2014 | US20140185380 Semiconductor memory device having faulty cells |
07/03/2014 | US20140185378 Multi-bit flash memory device and memory cell array |
07/03/2014 | US20140185377 Multi-level cell memory device and method of operating multi-level cell memory device |
07/03/2014 | US20140185376 Method and system for asynchronous die operations in a non-volatile memory |
07/03/2014 | US20140185375 Memory system to determine inference of a memory cell by adjacent memory cells, and operating method thereof |
07/03/2014 | US20140185374 Nonvolatile memory and method with improved i/o interface |
07/02/2014 | EP2748821A1 Threshold voltage compensation in a memory |
07/02/2014 | EP2748820A1 Circuit and method for reading a resistive switching device in an array |
07/02/2014 | EP2748819A1 Read compensation for partially programmed blocks of non-volatile storage |
07/02/2014 | CN203689920U 一种在线编程器系统 An on-line programming system |
07/02/2014 | CN103904212A 非挥发性存储器 Non-volatile memory |
07/02/2014 | CN103904080A 三维存储器结构及其操作方法 Three-dimensional memory structure and method of operation |
07/02/2014 | CN103903650A 存储器阵列及其控制方法和闪存 Memory and flash memory array and its control method |
07/02/2014 | CN103903649A 半导体存储装置 The semiconductor memory device |
07/02/2014 | CN103903648A 一种带有存储器的终端及非易失性存储器数据保护电路 A terminal and non-volatile memory data protection circuit having a memory |
07/02/2014 | CN103903647A 具有多个外部电源的非易失性半导体存储器 Nonvolatile semiconductor memory having a plurality of external power supplies |
07/02/2014 | CN103903642A 管理存储器装置的行为的方法和设备 Memory management behavior of the method and apparatus apparatus |
07/02/2014 | CN102376358B 电子系统、反熔丝记忆体元件及其提供方法 Electronic systems, anti-fuse memory device and provides methods |
07/02/2014 | CN102197436B 用于多电平单元存储器的数据路径,用于存储的方法及用于利用存储器阵列的方法 A method for the data path of the memory array of multi-level cell memory for storage and means for using the method of |
07/02/2014 | CN102177554B 补偿在非易失性存储器中的读操作期间的耦合 During a read operation is coupled to compensate the non-volatile memory |
07/02/2014 | CN102160119B 非易失性存储器中感测期间的基于数据状态的温度补偿 Temperature compensation based on the data state non-volatile memory sensing period |
07/02/2014 | CN102142279B 半导体存储装置 The semiconductor memory device |
07/02/2014 | CN101937707B 对非易失性存储器器件进行编程的方法 Non-volatile memory device is programmed methods |
07/02/2014 | CN101685676B 确定存储器页状况 Determine the status of memory pages |
07/02/2014 | CN101510440B 闪速存储器装置 Flash memory device |
07/01/2014 | US8767477 Non-volatile semiconductor memory device |
07/01/2014 | US8767475 Method of programming a nonvolatile memory device |
07/01/2014 | US8767474 Nonvolatile memory device and method for controlling the same |
07/01/2014 | US8767473 Programming methods for three-dimensional memory devices having multi-bit programming, and three-dimensional memory devices programmed thereby |
07/01/2014 | US8767472 Non-volatile memory apparatus and methods |
07/01/2014 | US8767470 Memory segment accessing in a memory device |
07/01/2014 | US8767467 In-field block retiring |
07/01/2014 | US8767466 Non-volatile semiconductor memory device |
07/01/2014 | US8767464 Semiconductor memory devices, reading program and method for memory devices |
07/01/2014 | US8767462 Nonvolatile memory device |
07/01/2014 | US8767461 Non-volatile memory with dynamic multi-mode operation |
07/01/2014 | US8767459 Data storage in analog memory cells across word lines using a non-integer number of bits per cell |
06/26/2014 | WO2014100607A1 Bit-flipping in memories |
06/26/2014 | WO2014099381A1 Tuning of floating gate select transistor in nand-string |
06/26/2014 | WO2014099065A1 Log-likelihood ratio and lumped log-likelihood ratio generation for data storage systems |
06/26/2014 | WO2014098839A1 Nvram path selection |
06/26/2014 | US20140181382 User Selectable Balance Between Density and Reliability |
06/26/2014 | US20140177342 Memory cell sensing using a boost voltage |
06/26/2014 | US20140177341 Semiconductor device |
06/26/2014 | US20140177340 Determining memory page status |
06/26/2014 | US20140177339 Nonvolatile semiconductor memory device and memory system having the same |
06/26/2014 | US20140177338 Non-volatile memory cell |
06/26/2014 | US20140177337 Three dimensional stacked nonvolatile semiconductor memory |
06/26/2014 | US20140177336 Non-volatile memory device and method of fabricating the same |
06/26/2014 | US20140177335 Nonconsecutive sensing of multilevel memory cells |
06/26/2014 | US20140177334 Circuit for sensing mlc flash memory |
06/26/2014 | US20140177333 Row decoding circuit and memory |
06/26/2014 | US20140177332 Operating circuit controlling device, semiconductor memory device and method of operating the same |
06/26/2014 | US20140176182 Shut-off mechanism in an integrated circuit device |
06/25/2014 | EP2747085A1 Method for operating a safety element as well as such a safety element |
06/25/2014 | EP2745295A1 Apparatus and methods including source gates |
06/25/2014 | CN203673832U 一种可动态编程的立体图案显示装置 A three-dimensional pattern can be dynamically programmed display device |
06/25/2014 | CN203673831U 一种eeprom在线烧录电路及空调器 One kind eeprom online burn circuits and air conditioners |
06/25/2014 | CN103886909A 编程电压调整方法 Programming voltage adjustment method |
06/25/2014 | CN103886908A 电可擦除可编程只读存储器的控制方法 Electrically erasable programmable read-only memory control method |
06/25/2014 | CN103886907A 操作电路控制器件、半导体存储器件及其操作方法 Control operation of the circuit device, a semiconductor memory device and method of operation |
06/25/2014 | CN103886906A 读取非易失性存储器电流的方法及获取电流分布状态的方法 Reading the nonvolatile memory and access method for the current condition of a current distribution |
06/25/2014 | CN103886905A 存储器单元、电可擦除可编程只读存储器及其控制方法 A memory unit, electrically erasable programmable read only memory device and a control method |
06/25/2014 | CN103886904A 非易失性暂存器单元、非易失性移位暂存器单元及操作方法 Nonvolatile register unit, nonvolatile shift register unit and method of operation |
06/25/2014 | CN103886903A 用以产生参考电流的参考单元电路以及方法 A reference cell circuit and a method for generating the reference current |
06/25/2014 | CN103886902A 一种eeprom存储装置及其数据存储方法 One kind eeprom storage device and data storage method |
06/25/2014 | CN102347073B 非易失性可变电阻元件的电阻控制方法 A resistance control method of the nonvolatile variable resistance element |
06/25/2014 | CN101894582B 存储数据译码方法,装置以及设备 Storing data decoding method, apparatus, and equipment |
06/25/2014 | CN101727977B 具有包括伪晶体管的存储单元串的闪存装置 Flash memory device having a memory cell string includes a dummy transistor |
06/25/2014 | CN101441893B 抑制寄生电荷积累的非易失性存储器件及其操作方法 Inhibitory non-volatile memory device and method of operation of a parasitic charge accumulation |
06/25/2014 | CN101393888B 栈式1T-n存储单元结构 Stacker 1T-n memory cell structure |
06/24/2014 | US8762654 Selectively scheduling memory accesses in parallel based on access speeds of memory |
06/24/2014 | US8762626 Data modification based on matching bit patterns |
06/24/2014 | US8762625 Stochastic block allocation for improved wear leveling |
06/24/2014 | US8762623 Method for managing a plurality of blocks of a flash memory, and associated memory device and controller thereof |
06/24/2014 | US8760957 Non-volatile memory and method having a memory array with a high-speed, short bit-line portion |
06/24/2014 | US8760953 Sense amplifier with selectively powered inverter |
06/24/2014 | US8760935 Nonvolatile semiconductor memory device |
06/24/2014 | US8760934 3-D structured non-volatile memory device and method of manufacturing the same |
06/24/2014 | US8760933 Circuits, systems, and methods for driving high and low voltages on bit lines in non-volatile memory |
06/24/2014 | US8760932 Determination of memory read reference and programming voltages |
06/24/2014 | US8760931 Semiconductor device |
06/24/2014 | US8760930 Memory device with source-side sensing |