Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
09/2014
09/25/2014US20140286103 Non-volatile semiconductor memory device
09/25/2014US20140286101 Back bias during program verify of non-volatile storage
09/25/2014US20140286100 Nonvolatile semiconductor memory device
09/25/2014US20140286099 Semiconductor memory device, controller, and memory system
09/25/2014US20140286098 Nonvolatile semiconductor memory device
09/25/2014US20140286097 Thermally assisted flash memory with diode strapping
09/25/2014US20140286096 Memory device and method of controlling leakage current within such a memory device
09/25/2014US20140286095 Non-volatile semiconductor memory device
09/25/2014US20140286094 Data modulation for groups of memory cells
09/25/2014US20140286093 Semiconductor memory device
09/25/2014US20140286092 Memory kink checking
09/25/2014US20140286091 Semiconductor integrated circuit
09/24/2014EP2780912A1 Non-volatile storage with broken word line screen and data recovery
09/24/2014EP2780798A1 Storage device firmware and manufacturing software
09/23/2014US8843699 Flash memory device with multi-level cells and method of writing data therein
09/23/2014US8843698 Systems and methods for temporarily retiring memory portions
09/23/2014US8843696 Memory device and method of controlling the same
09/23/2014US8843695 Reversible write-protection for non-volatile semiconductor memory device
09/23/2014US8843693 Non-volatile memory and method with improved data scrambling
09/23/2014US8843692 System of interconnected nonvolatile memories having automatic status packet
09/23/2014US8842484 Voltage generator, nonvolatile memory device comprising voltage generator, and method of operating voltage generator
09/23/2014US8842482 Programmable memory with skewed replica and redundant bits for reset control
09/23/2014US8842480 Automated control of opening and closing of synchronous dynamic random access memory rows
09/23/2014US8842479 Low voltage programming in NAND flash with two stage source side bias
09/23/2014US8842478 Nonvolatile semiconductor memory device
09/23/2014US8842477 Method, apparatus, and manufacture for flash memory adaptive algorithm
09/23/2014US8842476 Erratic program detection for non-volatile storage
09/23/2014US8842474 Nonvolatile memory device and nonvolatile memory system including the same
09/23/2014US8842473 Techniques for accessing column selecting shift register with skipped entries in non-volatile memories
09/23/2014US8842472 Partial block erase architecture for flash memory
09/23/2014US8842471 Charge cycling by equalizing and regulating the source, well, and bit line levels during write operations for NAND flash memory: program to verify transition
09/23/2014US8842470 System and method for correcting signals read from a memory cell of a flash memory
09/23/2014US8842469 Method for programming a multi-state non-volatile memory (NVM)
09/23/2014US8842018 Systems and methods for tracking insertion and removal cycles of optical transceiver modules
09/23/2014CA2660087C Memory configuration and method for calibrating read/write data based on performance characteristics of the memory configuration
09/18/2014WO2014142427A1 Storage system and data transmitting method thereof
09/18/2014WO2014138886A1 Lithography-friendly local read circuit for nand flash memory devices and manufacturing method thereof
09/18/2014WO2014138869A1 Structure and method for manufacture of memory device with thin silicon body
09/18/2014US20140281820 Method and system for adaptive setting of verify levels in flash memory
09/18/2014US20140269103 Nonvolatile memory device and method of manufacturing the same
09/18/2014US20140269102 Eeprom memory cell with low voltage read path and high voltage erase/write path
09/18/2014US20140269101 Programming a memory cell to a voltage to indicate a data value and after a relaxation time programming the memory cell to a second voltage to indicate the data value
09/18/2014US20140269100 Shared bit line string architecture
09/18/2014US20140269099 Method for driving semiconductor device and semiconductor device
09/18/2014US20140269098 Dynamic programming of advanced nanometer flash memory
09/18/2014US20140269097 Non-volatile semiconductor memory device and method of controlling the non-volatile semiconductor memory device
09/18/2014US20140269096 Non-volatile semiconductor memory device and method of programming the same
09/18/2014US20140269095 Semiconductor storage
09/18/2014US20140269094 Semiconductor memory device
09/18/2014US20140269093 Semiconductor memory device
09/18/2014US20140269092 Continuous-time floating gate memory cell programming
09/18/2014US20140269091 Memory device and method of controlling leakage current within such a memory device
09/18/2014US20140269090 Periodic Erase Operation for a Non-Volatile Medium
09/18/2014US20140269089 Semiconductor memory device and method of testing the same
09/18/2014US20140269088 System and method of reading data from memory concurrently with sending write data to the memory
09/18/2014US20140269087 Lithography-friendly Local Read Circuit for NAND Flash Memory Devices and Manufacturing Method Thereof
09/18/2014US20140269086 System and method of accessing memory of a data storage device
09/18/2014US20140269085 Determining read voltages for reading memory
09/18/2014US20140269084 Non-volatile semiconductor memory device
09/18/2014US20140269083 Bit line current trip point modulation for reading nonvolatile storage elements
09/18/2014US20140269082 Operation for non-volatile storage system with shared bit lines
09/18/2014US20140269081 Soft erase operation for 3d non-volatile memory with selective inhibiting of passed bits
09/18/2014US20140269080 Non-volatile memory device and method of programming the same
09/18/2014US20140269079 Nonvolatile semiconductor memory device
09/18/2014US20140269077 Array arrangement for 3d nand memory
09/18/2014US20140269076 Non-volatile memory and programming in thereof
09/18/2014US20140269075 2t and flash memory array
09/18/2014US20140269074 Management of non-volatile memory
09/18/2014US20140269073 Semiconductor memory device
09/18/2014US20140269071 Preserving data from adjacent word lines while programming binary non-volatile storage elements
09/18/2014US20140269070 Compensation For Temperature Dependence Of Bit Line Resistance
09/18/2014US20140269069 Tracking cell erase counts of non-volatile memory
09/18/2014US20140269068 Tracking erase pulses for non-volatile memory
09/18/2014US20140269067 Tracking erase operations to regions of non-volatile memory
09/18/2014US20140269066 Methods for extending the effective voltage window of a memory cell
09/18/2014US20140269065 NAND Flash Memory
09/18/2014US20140269064 Source line floating circuits, memory devices including the same and methods of reading data in a memory device
09/18/2014US20140269063 Method for driving semiconductor device and semiconductor device
09/18/2014US20140269062 Low Leakage, Low Threshold Voltage, Split-Gate Flash Cell Operation
09/18/2014US20140269061 High Speed Sensing For Advanced Nanometer Flash Memory Device
09/18/2014US20140269060 Integrated circuits and methods for operating integrated circuits with non-volatile memory
09/18/2014US20140269059 Shifting cell voltage based on grouping of solid-state, non-volatile memory cells
09/18/2014US20140269058 Non-volatile Memory Program Algorithm Device And Method
09/18/2014US20140269057 Non-volatile memory device and programming method
09/18/2014US20140269056 Solid state drive encountering power failure and associated data storage method
09/18/2014US20140269055 Semiconductor memory device
09/18/2014US20140269054 Non-volatile memory and method of operation thereof
09/18/2014US20140269053 Nonvolatile memory data recovery after power failure
09/18/2014US20140269052 System and method of determining reading voltages of a data storage device
09/18/2014US20140269051 Programming schemes for 3-d non-volatile memory
09/18/2014US20140269050 Determining read voltages for reading memory
09/18/2014US20140269049 Hybrid Chargepump And Regulation Means And Method For Flash Memory Device
09/18/2014US20140269048 Retention detection and/or channel tracking policy in a flash memory based storage system
09/18/2014DE102014103129A1 Verfahren zum Lesen von Daten aus einer nichtflüchtigen Speichervorrichtung, nichtflüchtige Speichervorrichtung und Verfahren zum Betreiben eines Speichersystems A method of reading data from a nonvolatile memory device, a nonvolatile memory device and method of operating a memory system
09/18/2014DE102014103125A1 Verfahren und Vorrichtung zum Optimieren des Log-Likelihood-Quotienten (LLR), die verwendet werden für eine nichtflüchtige Speichervorrichtung und zum Korrigieren von Fehlern in einer nichtflüchtigen Speichervorrichtung Method and apparatus for optimizing the log-likelihood-ratio (LLR), which are used for a non-volatile memory device and for correcting errors in a non-volatile memory device
09/17/2014EP2779175A2 Retention check logic for non-volatile memory
09/17/2014EP2779173A2 2T and flash memory array
09/17/2014EP2777044A1 Serial memory with fast read with look-ahead
09/17/2014EP2776929A1 Soft information generation for memory systems
09/16/2014US8839080 Methods of performing error detection/correction in nonvolatile memory devices
1 ... 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 ... 444