Patents for G11C 16 - Erasable programmable read-only memories (44,373) |
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07/22/2014 | US8787078 Method and apparatus for reducing read disturb in memory |
07/17/2014 | WO2014110183A1 Systems and methods to update reference voltages in response to data retention in non-volatile memory |
07/17/2014 | WO2014110123A1 Method and apparatus for program and erase of select gate transistors |
07/17/2014 | WO2014109771A1 Nonvolatile memory array logic |
07/17/2014 | WO2014107796A1 Nonvolatile memory with split substrate select gates and heirarchical bitline configuration |
07/17/2014 | US20140198583 Method and System for Reducing the Size of Nonvolatile Memories |
07/17/2014 | US20140198582 Capacitor structures having improved area efficiency |
07/17/2014 | US20140198581 Method of storing data in nonvolatile memory device and method of testing nonvolatile memory device |
07/17/2014 | US20140198579 Disturb verify for programming memory cells |
07/17/2014 | US20140198578 Method Of Operating A Split Gate Flash Memory Cell With Coupling Gate |
07/17/2014 | US20140198577 Semiconductor device |
07/17/2014 | US20140198576 Programming technique for reducing program disturb in stacked memory structures |
07/17/2014 | US20140198575 Method And Apparatus For Program And Erase Of Select Gate Transistors |
07/17/2014 | US20140198574 Nonvolatile memory and manipulating method thereof |
07/17/2014 | US20140198573 Memory system and method of operation thereof |
07/17/2014 | US20140198572 String selection structure of three-dimensional semiconductor device |
07/17/2014 | US20140198571 Selecting memory cells |
07/17/2014 | US20140198570 Programming multibit memory cells |
07/17/2014 | US20140198569 Flash memory, flash memory system and operating method of the same |
07/17/2014 | US20140198568 Non-volatile memory systems and methods |
07/17/2014 | US20140198567 Dynamic adjustment of read voltage levels based on memory cell threshold voltage distribution |
07/17/2014 | US20140198566 Reference current sources |
07/17/2014 | US20140197474 Semiconductor integrated circuit device and a method of manufacturing the same |
07/17/2014 | DE102014100161A1 Speichersystem und Betriebsverfahren davon Storage system and method of operation thereof |
07/17/2014 | DE102014000513A1 Verfahren und system zum verringern der grösse von nichtflüchtigen speichern A method and system for reducing the size of nonvolatile memories |
07/16/2014 | CN203721201U 存储器装置及空调器 Memory devices and air conditioners |
07/16/2014 | CN103928055A 闪速存储器、闪速存储器系统及其操作方法 A flash memory, a flash memory system and method of operation |
07/16/2014 | CN103928054A 一种包含叠层式存储器结构的存储器及其操作方法 Comprising a memory device and method of operation of the multi-layer memory structure |
07/16/2014 | CN103928053A 低功耗单栅非挥发性存储器 Low-power single-gate non-volatile memory |
07/16/2014 | CN103928052A 存储系统及其操作方法 Storage system and method of operation |
07/16/2014 | CN102655152B 存储装置、其制造方法与操作方法 A storage device, its manufacturing method and operating method |
07/16/2014 | CN102354531B 识别具有较差的亚阈斜率或较弱的跨导的非易失存储器元件的方法 The method of identification has poor subthreshold slope or weak transconductance of the non-volatile memory element of |
07/16/2014 | CN102341865B Nand闪存装置的编程方法 Nand flash memory device programming |
07/16/2014 | CN102222524B 记忆胞的操作方法 Method of operation of the memory cell |
07/16/2014 | CN101946287B 用于非易失性存储器的低噪声感测放大器阵列和方法 Low-noise sense amplifier array and a method for non-volatile memory |
07/16/2014 | CN101677019B 闪存的流水线读取方法及系统 Flash reading method and system for pipeline |
07/16/2014 | CN101617370B 源侧非对称预充电编程方案 Asymmetric precharge source side programming scheme |
07/16/2014 | CN101593557B 分栅闪存的操作方法 Operation sub-gate flash memory |
07/16/2014 | CN101533663B 提高闪存介质数据存取速度的方法 Improve data access speed flash media methods |
07/15/2014 | US8780659 Programming memory cells |
07/15/2014 | US8780642 Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing |
07/15/2014 | US8780640 System and method to enable reading from non-volatile memory devices |
07/15/2014 | US8780639 Non-volatile memory device with plural reference cells, and method of setting the reference cells |
07/15/2014 | US8780637 Updating reference voltages to compensate for changes in threshold voltage distributions of nonvolatile memory cells |
07/15/2014 | US8780636 Rewritable nonvolatile semiconductor memory device with stacked memory cells |
07/15/2014 | US8780635 Use of bloom filter and improved program algorithm for increased data protection in CAM NAND memory |
07/15/2014 | US8780634 CAM NAND with OR function and full chip search capability |
07/15/2014 | US8780633 De-duplication system using NAND flash based content addressable memory |
07/15/2014 | US8780632 De-duplication techniques using NAND flash based content addressable memory |
07/15/2014 | US8780631 Memory devices having data lines included in top and bottom conductive lines |
07/15/2014 | US8780630 Operating method of semiconductor device |
07/15/2014 | US8780629 Semiconductor device and driving method thereof |
07/15/2014 | US8780628 Integrated circuit including a voltage divider and methods of operating the same |
07/15/2014 | US8780627 Non-volatile memory devices having uniform error distributions among pages |
07/15/2014 | US8780626 Sense operation in a memory device |
07/15/2014 | US8780624 Memory array |
07/15/2014 | US8780617 Semiconductor memory device and method of performing burn-in test on the same |
07/10/2014 | WO2014107711A1 Power management |
07/10/2014 | WO2014107346A1 Erase for non-volatile storage |
07/10/2014 | US20140195723 Non-volatile configuration for serial non-volatile memory |
07/10/2014 | US20140192600 Eeprom cell and eeprom device |
07/10/2014 | US20140192599 Test partitioning for a non-volatile memory |
07/10/2014 | US20140192598 Semiconductor memory device |
07/10/2014 | US20140192597 Circuit for controlling eeprom cell |
07/10/2014 | US20140192596 Nonvolatile memory with split substrate select gates and heirarchical bitline configuration |
07/10/2014 | US20140192595 Three-Dimensional Array of Re-Programmable Non-Volatile Memory Elements Having Vertical Bit Lines and a Single-Sided Word Line Architecture |
07/10/2014 | US20140192594 P-channel 3d memory array |
07/10/2014 | US20140192593 Flash multi-level threshold distribution scheme |
07/10/2014 | DE102005031892B4 Verfahren zum Programmieren von Multi-Bit-Charge-Trapping-Speicherzellenanordnungen und Speicherbauelement A method of programming multi-bit charge trapping memory cell arrays and memory device |
07/09/2014 | EP2752854A1 Method for operating a participant identification module as well as such a participant identification module |
07/09/2014 | EP2751809A2 Memory refresh methods and apparatuses |
07/09/2014 | EP2751659A1 Apparatuses and methods of operating for memory endurance |
07/09/2014 | CN203706671U Nand-flash烧录拷贝电路及Nand-flash烧录设备 Nand-flash burn copies of the circuit and Nand-flash programming device |
07/09/2014 | CN103915117A 一种具有三维与非门阵列的快闪存储装置及其操作方法 A three-dimensional NAND flash memory devices and methods of operating the gate array having |
07/09/2014 | CN103915116A 带有双存储器芯片的电子车牌 Electronic license with dual memory chips |
07/09/2014 | CN103915115A 行解码电路 Row decoding circuit |
07/09/2014 | CN102522374B 一种具有柱状底电极相变化存储装置及其制造方法 A bottom electrode having a columnar phase change memory device and manufacturing method thereof |
07/09/2014 | CN102376365B Sonos闪存数据擦除方法 Sonos flash data erasure method |
07/09/2014 | CN102360317B 分离和存留控制应用的静态和动态部分的方法 The method of separation and static and dynamic portions of the remaining control applications |
07/09/2014 | CN102354299B 存储卡和半导体器件 Memory card and semiconductor devices |
07/09/2014 | CN102203873B 重编程页而不向存储器设备重输数据的页缓冲器编程命令和方法 The page buffer programming commands and methods of reprogramming page without heavy input to the memory device data |
07/09/2014 | CN102054532B 一种使sonos电晶体兼具开关以及记忆体的方法 One kind of makes sonos transistor switches and memory both ways |
07/09/2014 | CN101960533B 在存储器装置的编程期间的电荷损失补偿 Charge loss compensation during programming of the memory device |
07/09/2014 | CN101887751B 用于工厂编程相变存储器的专用接口 Dedicated interface for factory programming phase change memory |
07/09/2014 | CN101872645B 选通管复用结构的电阻存储器、阵列及其读操作方法 Strobe tube multiplex resistance memory structures, arrays and read method |
07/09/2014 | CN101681668B 电子存储器的基于分区的感测及划分 Partition-based sensing and electronic storage division |
07/09/2014 | CN101632130B 使用自偏置式电容性反馈级的模拟电压产生 Use self-biased capacitive feedback-level analog voltage generator |
07/08/2014 | US8775913 Methods and apparatus for computing soft data or log likelihood ratios for received values in communication or storage systems |
07/08/2014 | US8773917 Word line kicking when sensing non-volatile storage |
07/08/2014 | US8773916 Nonvolatile memory device, system and programming method with dynamic verification mode selection |
07/08/2014 | US8773915 Semiconductor memory device and operating method thereof |
07/08/2014 | US8773913 Systems and methods for sensing in memory devices |
07/08/2014 | US8773912 Soft landing for desired program threshold voltage |
07/08/2014 | US8773911 Semiconductor device and erase methods thereof |
07/08/2014 | US8773909 CAM NAND with or function and full chip search capability |
07/08/2014 | US8773908 Nonvolatile memory devices and methods of programming nonvolatile memory devices |
07/08/2014 | US8773907 Reading memory cell history during program operation for adaptive programming |
07/08/2014 | US8773905 Identifying and mitigating restricted sampling voltage ranges in analog memory cells |
07/08/2014 | US8773904 Optimized threshold search in analog memory cells |
07/08/2014 | US8773903 High speed high density nand-based 2T-NOR flash memory design |