Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
05/2014
05/28/2014CN101174461B 多芯片闪存器件及其复录方法 Multi-chip flash memory device and method of dubbing
05/27/2014US8738844 Program method, data recovery method, and flash memory using the same
05/27/2014US8737157 Memory device word line drivers and methods
05/27/2014US8737140 Semiconductor memory device and method of operating the same
05/27/2014US8737138 Memory instruction including parameter to affect operating condition of memory
05/27/2014US8737137 Flash memory with bias voltage for word line/row driver
05/27/2014US8737136 Apparatus and method for determining a read level of a memory cell based on cycle information
05/27/2014US8737135 Method for and flash memory device having improved read performance
05/27/2014US8737132 Charge cycling by equalizing the source and bit line levels between pulses during no-verify write operations for NAND flash memory
05/27/2014US8737130 System and method of determining a programming step size for a word line of a memory
05/27/2014US8737129 Nonvolatile memory device and read method thereof
05/27/2014US8737128 Semiconductor memory device and method of operating the same
05/27/2014US8737127 Memory controllers to output data signals of a number of bits and to receive data signals of a different number of bits
05/27/2014US8737126 Data writing method, and memory controller and memory storage apparatus using the same
05/27/2014US8737125 Aggregating data latches for program level determination
05/27/2014US8735958 Multi-layer polysilicon suppression of implant species penetration
05/22/2014WO2014078864A2 Memory cell array with reserved sector for storing configuration information
05/22/2014WO2014078788A1 Data refresh in non-volatile memory
05/22/2014WO2014078695A1 Memory segment remapping to address fragmentation
05/22/2014WO2014077980A1 Three-dimensional flash memory system
05/22/2014WO2014075172A1 Method and system for programming non-volatile memory with junctionless cells
05/22/2014WO2013066592A3 A mixed voltage non-volatile memory integrated circuit with power saving
05/22/2014US20140140142 Memory storage device, memory controller thereof, and method for programming data thereof
05/22/2014US20140140141 Read margin measurement in a read-only memory
05/22/2014US20140140140 Vertical Nonvolatile Memory Devices and Methods of Operating Same
05/22/2014US20140140139 Interconnection matrix using semiconductor non-volatile memory
05/22/2014US20140140138 Three-Dimensional Flash Memory System
05/22/2014US20140140137 Nand-type non-volatile semiconductor storage device
05/22/2014US20140140136 Semiconductor device and method of operating the same
05/22/2014US20140140134 Apparatus and methods including a bipolar junction transistor coupled to a string of memory cells
05/22/2014US20140140133 Semiconductor device
05/22/2014US20140140132 Flash memory circuit
05/22/2014US20140140131 Three dimensional gate structures with horizontal extensions
05/22/2014US20140140130 Semiconductor memory device for and method of applying temperature-compensated word line voltage during read operation
05/22/2014US20140140129 Programming method for nand flash memory device to reduce electrons in channels
05/22/2014DE19924568B4 Ladungspumpe Charge pump
05/22/2014DE102004055929B4 Nichtflüchtige Speicherzellen-Anordnung Non-volatile memory cell arrangement
05/21/2014EP2732373A1 Method and apparatus for flexible raid in ssd
05/21/2014CN103814409A 使用以二进制格式和多状态格式写入的数据的比较的非易失性存储器中的写入后读取 After using comparative data in binary format and written in a format of a multi-state non-volatile memory is written to read
05/21/2014CN103814408A 用于非易失性存储器的部分编程块的读取补偿 Read part of the programming block compensation for non-volatile memory
05/21/2014CN103812332A 一种电荷泵电路及存储器 One kind of charge pump circuit and a memory
05/21/2014CN103811074A 闪存的储存状态决定方法及其相关系统 A method of determining the state of the flash memory storage system and its associated
05/21/2014CN103811073A 一种非挥发存储器的高可靠性读取电路 A non-volatile memory reading circuit with high reliability
05/21/2014CN103811072A 一种高可靠性NAND Flash的读取方法及其系统 A highly reliable NAND Flash reading method and system
05/21/2014CN103811071A 一种高可靠性NAND Flash的读取方法及其系统 A highly reliable NAND Flash reading method and system
05/21/2014CN103811070A 一种高可靠性NAND Flash的读取方法及其系统 A highly reliable NAND Flash reading method and system
05/21/2014CN103811069A 与存储器层集成的安全电路 Integrated with the memory layer, the safety circuit
05/21/2014CN103811068A 非易失存储器的擦除方法及系统 Nonvolatile memory erase method and system
05/21/2014CN103811067A 非易失存储器的擦除方法及系统 Nonvolatile memory erase method and system
05/21/2014CN103811066A 非易失存储器的擦除方法及系统 Nonvolatile memory erase method and system
05/21/2014CN103811065A 非易失性存储器系统 A non-volatile memory system
05/21/2014CN103811064A Eeprom结构、存储阵列及其编程、擦除和读取方法 Eeprom structure, storage arrays and its programming, erasing and reading method
05/21/2014CN103811063A 非易失性半导体存储装置 The nonvolatile semiconductor memory device
05/21/2014CN103811062A 存储器及存储器的读取方法 Reading method memory and memory
05/21/2014CN103811061A Eeprom及其存储阵列 Eeprom its storage arrays
05/21/2014CN103811060A Eeprom及其存储阵列 Eeprom its storage arrays
05/21/2014CN103811059A 一种非挥发存储器参考校准电路与方法 A non-volatile memory and method with reference to calibration circuit
05/21/2014CN103811058A 基于忆阻的非易失性存储器、读写擦除操作方法及测试电路 Memristive based nonvolatile memory, reading and writing the erase operation method and the test circuit
05/21/2014CN103811057A 用于eeprom的高压生成电路 For the high-voltage generation circuit eeprom
05/21/2014CN103811056A 非易失性存储器的钳位电路 Clamp circuit of the nonvolatile memory
05/21/2014CN103811055A Eeprom存储单元的操作方法 Operation Eeprom memory cell
05/21/2014CN103811054A 一种NAND Flash存储器、NAND Flash存储器实现方法及其系统 One kind of NAND Flash memory, NAND Flash memory and System Implementation
05/21/2014CN102610345B 一种基于忆阻器的电位器 Based memristor potentiometer
05/21/2014CN102298971B 一种非挥发性快闪存储器高密度多值存储的操作方法 A multi-value method of operation is stored in a high-density non-volatile flash memory
05/21/2014CN102292775B 存储器的适应性擦除和软编程 Adaptive memory erased and soft programming
05/21/2014CN102063938B Mtp器件的单元结构 Mtp device unit structure
05/21/2014CN101908376B 非挥发性存储装置及其控制方法 Non-volatile memory device and control method
05/20/2014US8730755 Single transistor driver for address lines in a phase change memory and switch (PCMS) array
05/20/2014US8730741 Semiconductor memory system capable of suppressing consumption current
05/20/2014US8730739 Semiconductor device for accelerating erase verification process and method therefor
05/20/2014US8730738 Nonvolatile memory devices and methods of operating nonvolatile memory devices
05/20/2014US8730736 NAND step up voltage switching method
05/20/2014US8730733 Non-volatile memory device and memory system including the same
05/20/2014US8730732 Semiconductor memory device and method of fabrication and operation
05/20/2014US8730730 Temporary storage circuit, storage device, and signal processing circuit
05/20/2014US8730729 Systems and methods for averaging error rates in non-volatile devices and storage systems
05/20/2014US8730728 EEPROM cell with transfer gate
05/20/2014US8730727 3D non-volatile memory device and method for operating and fabricating the same
05/20/2014US8730725 Method of programming/reading a non-volatile memory with a sequence
05/20/2014US8730724 Common line current for program level determination in flash memory
05/20/2014US8730723 Structures and methods of high efficient bit conversion for multi-level cell non-volatile memories
05/20/2014US8730722 Saving of data in cases of word-line to word-line short in memory arrays
05/20/2014US8730721 Reduction of read disturb errors in NAND FLASH memory
05/15/2014WO2014074500A1 Architectures for data analytics using computational nand memory
05/15/2014WO2014074496A2 Cam nand with or function and full chip search capability
05/15/2014WO2014074494A1 Data search using bloom filters and nand based content addressable memory
05/15/2014WO2014074490A1 De-duplication system using nand flash based content addressable memory
05/15/2014WO2014074487A1 De-duplication techniques using nand flash based content addressable memory
05/15/2014WO2014074483A2 On-device data analytics using nand flash based intelligent memory
05/15/2014WO2014074408A2 3d stacked non-volatile storage programming to conductive state
05/15/2014WO2014074311A1 Flash memory with data retention bias
05/15/2014WO2014074131A1 Nand flash based content addressable memory
05/15/2014WO2014073747A1 Method for reducing power consumption of flash memory and apparatus therefor
05/15/2014US20140136924 Method and system for determining storing state of flash memory
05/15/2014US20140133245 Twin MONOS Array for High Speed Application
05/15/2014US20140133244 Twin MONOS Array for High Speed Application
05/15/2014US20140133243 Clock mode determination in a memory system
05/15/2014US20140133242 Memory with output control
05/15/2014US20140133241 Memory Controllers and User Systems Including the Same
05/15/2014US20140133240 Solid state storage device with sleep control circuit
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