Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
04/2014
04/08/2014US8693259 Wordline-to-wordline stress configuration
04/08/2014US8693257 Determining optimal read reference and programming voltages for non-volatile memory using mutual information
04/08/2014US8693253 Vertically stackable NAND flash memory
04/08/2014US8693252 Method and system for adjusting read voltage in flash memory device
04/08/2014US8693250 Three dimensional stacked nonvolatile semiconductor memory
04/08/2014US8693249 Semiconductor memory devices
04/08/2014US8693247 Non-volatile memory device and method for programming the device, and memory system
04/08/2014US8693246 Memory controller self-calibration for removing systemic influence
04/08/2014US8693245 Multi-bit flash memory device and memory cell array
04/03/2014WO2014052163A1 Charge pump based over-sampling adc for current detection
04/03/2014WO2014051775A1 Techniques associated with protecting system critical data written to non-volatile memory
04/03/2014WO2014051611A1 Systems for and methods of extending lifetime of non-volatile memory
04/03/2014US20140095769 Flash memory dual in-line memory module management
04/03/2014US20140092689 Method for programming non-volatile memory cell, non-volatile memory array and non-volatile memory apparatus
04/03/2014US20140092688 Non-Volatile Semiconductor Storage Device
04/03/2014US20140092687 Method, apparatus, and manufacture for staggered start for memory module
04/03/2014US20140092686 Vertically-integrated nonvolatile memory devices having laterally-integrated ground select transistors
04/03/2014US20140092685 Nonvolatile memory device, operating method thereof and memory system including the same
04/03/2014US20140092684 Nonvolatile semiconductor memory device
04/03/2014US20140092683 Adjustable read time for memory
04/03/2014US20140092682 Method for programming and reading flash memory by storing last programming page number
04/03/2014DE10026993B4 Flash-Speicherbauelement mit einer neuen Redundanzansteuerschaltung Flash memory device with a new Redundanzansteuerschaltung
04/02/2014CN203520883U CMOS (complementary metal oxide semiconductor) process-compatible double-difference storage unit
04/02/2014CN103703515A Determining and transferring data from a memory array
04/02/2014CN103700404A Erasing-writing operation method for EEPROM, erasing-writing control circuit and RFID tag chip
04/02/2014CN103700403A Memory readout circuit for RFID tag chip
04/02/2014CN103700402A Semiconductor memory circuit
04/02/2014CN103700401A Quick-flash memory programming and reading method
04/02/2014CN103700400A Data latching circuits for Flash EEPROM
04/02/2014CN103700399A Flash memory and corresponding programming method, reading method and erasing method
04/02/2014CN102262902B Memory word-line driver having reduced power consumption
04/02/2014CN102169720B Resistor random access memory for eliminating over-write and error-write phenomena
04/02/2014CN101840723B Sensing amplifier and operation method thereof
04/01/2014US8687431 Programming methods and memories
04/01/2014US8687430 Analog sensing of memory cells with a source follower driver in a semiconductor memory device
04/01/2014US8687429 Semiconductor device and methods of operating the same
04/01/2014US8687428 Built-in self trim for non-volatile memory reference current
04/01/2014US8687427 Programming rate identification and control in a solid state memory
04/01/2014US8687426 Multi-semiconductor material vertical memory strings, strings of memory cells having individually biasable channel regions, memory arrays incorporating such strings, and methods of accesssing and forming the same
04/01/2014US8687425 Nonvolatile memory device, method for operating the same, and method for fabricating the same
04/01/2014US8687424 NAND flash memory of using common P-well and method of operating the same
04/01/2014US8687423 Nonvolatile memory device and method of operating the same
04/01/2014US8687421 Scrub techniques for use with dynamic read
04/01/2014US8687417 Electronic device and method of biasing
04/01/2014US8687400 Semiconductor memory device having a plurality of chips and capability of outputting a busy signal
03/2014
03/27/2014WO2014047119A1 Self-biasing multi-reference for sensing memory cell
03/27/2014WO2014047114A1 Self-biasing current reference
03/27/2014WO2014046887A1 Block and page level bad bit line and bits screening method for non-volatile memory
03/27/2014WO2014043788A1 Flash memory controller having dual mode pin-out
03/27/2014US20140089571 Bit inversion in memory devices
03/27/2014US20140088972 Envelope with recordable audio medium
03/27/2014US20140085991 Nonvolatile semiconductor memory device
03/27/2014US20140085990 Volatile semiconductor memory device and memory system
03/27/2014US20140085989 Semiconductor memory device
03/27/2014US20140085988 Nonvolatile semiconductor memory device
03/27/2014US20140085987 Semiconductor memory circuit
03/27/2014US20140085986 Memory array device and method for reducing read current of the same
03/27/2014US20140085985 Sigma Delta Over-Sampling Charge Pump Analog-To-Digital Converter
03/27/2014US20140085984 Two-Transistor Non-Volatile Memory Cell and Related Program and Read Methods
03/27/2014US20140085983 Nonvolatile semiconductor memory device and control method thereof
03/27/2014US20140085982 Semiconductor memory device
03/27/2014US20140085981 Semiconductor memory device
03/27/2014US20140085980 Memory devices and their operation with different sets of logical erase blocks
03/27/2014US20140085979 Nonvolatile semiconductor memory device
03/27/2014US20140085977 Semiconductor memory device with memory cells each including a charge accumulation layer and a control gate
03/27/2014US20140085976 Nonvolatile semiconductor memory device
03/26/2014EP2710475A1 Non-volatile memory and method with small logical groups distributed among active slc and mlc memory partitions
03/26/2014CN103688312A Memory and memory-reading method
03/26/2014CN103688246A A non-volatile memory and a method with small logical groups distributed among active SLC and MLC memory partitions
03/26/2014CN103681682A Two-transistor non-volatile memory cell and related program and read methods
03/26/2014CN103681681A Double-bit flash memory, and manufacturing method and operation method thereof
03/26/2014CN103680632A Semiconductor memory device
03/26/2014CN103680631A Improved differential framework XPM memory unit
03/26/2014CN103680630A Readout circuit and semiconductor device
03/26/2014CN103680629A Operation method of memory and integrated circuit having memory
03/26/2014CN103680628A Semiconductor memory device
03/26/2014CN103680627A Semiconductor memory device
03/26/2014CN103680626A Method to implement binary flag in flash memory
03/26/2014CN103680625A System and method for providing voltage supply protection in memory device
03/26/2014CN103680624A Programming method of nonvolatile memory device
03/26/2014CN103680623A Method for improving temperature characteristic of integrated circuit of embedded type nonvolatile storage
03/26/2014CN103680622A Non-volatile memory (NVM) with adaptive write operations
03/26/2014CN103680621A NVM with charge pump and method therefor
03/26/2014CN103680620A Non-volatile memory (NVM) that uses soft programming
03/26/2014CN103680619A Memory device and integrated circuit
03/26/2014CN103680618A Semiconductor memory device and controller
03/26/2014CN103680617A Resistance-change memory
03/26/2014CN103680616A Variable resistance memory device and operating method thereof
03/26/2014CN103680615A Semiconductor memory device and method of operating same
03/26/2014CN103680614A Semiconductor memory device and method of operating same
03/26/2014CN103680613A Semiconductor memory device and method of operating same
03/26/2014CN103680612A Method for optimizing reading and writing performances of electrically erasable nonvolatile memory
03/26/2014CN103680611A 3D (three-dimensional) NAND memory and manufacturing method thereof
03/26/2014CN103680610A Method and device for write operation of NAND Flash storage device with differential storage
03/26/2014CN103680609A N-channel multi-time programmable memory device
03/26/2014CN103680608A System and method for improving chip burning speed of boundary scan technology
03/26/2014CN103680605A M+n bit programming and m+l bit read for m bit memory cells
03/26/2014CN103663024A Burning system and method of all-in-one controller of lift and smart phone
03/26/2014CN102354529B Semiconductor memory device
03/26/2014CN102103886B Method for programming multi-level memory cells and memory device
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