Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 16 - Erasable programmable read-only memories
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
08/2009
08/26/2009CN101517652A Flash multi-level threshold distribution scheme
08/26/2009CN101515630A Resistance-type memory element and method for forming same
08/26/2009CN101515476A Nonvolatile semiconductor memory device
08/26/2009CN101515475A Two-bit non-volatile flash memory cells and methods of operating memory cells
08/26/2009CN101515474A Semiconductor device including resistance storage element
08/26/2009CN100533596C Semiconductor device
08/26/2009CN100533595C Memory device
08/26/2009CN100533592C Semiconductor memory device
08/26/2009CN100533378C Information processing device and method, momery management device and method
08/25/2009US7581058 Non-volatile memory having multiple erase operations
08/25/2009US7580297 Readout of multi-level storage cells
08/25/2009US7580293 Semiconductor memory device
08/25/2009US7580292 Method for programming a multilevel memory
08/25/2009US7580291 Data register with efficient erase, program verify, and direct bit-line memory access features
08/25/2009US7580290 Non-volatile storage system with intelligent control of program pulse duration
08/25/2009US7580289 Discharge circuit for a word-erasable flash memory device
08/25/2009US7580288 Multi-level voltage adjustment
08/25/2009US7580285 Semiconductor memory device using only single-channel transistor to apply voltage to selected word line
08/25/2009US7580284 Flash memory devices and methods of programming the same by overlapping programming operations for multiple mats
08/25/2009US7580282 Floating-gate non-volatile memory architecture for improved negative bias distribution
08/25/2009US7580280 Method and apparatus for a non-volatile memory device with reduced program disturb
08/25/2009US7580279 Flash memory cells with reduced distances between cell elements
08/25/2009US7579247 Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
08/25/2009US7579241 Semiconductor device and method of manufacture thereof
08/25/2009US7579240 Method of making vertical transistor with horizontal gate layers
08/20/2009WO2009102423A2 A single-polycrystalline silicon electrically erasable and programmable nonvolatile memory device
08/20/2009WO2009102105A1 Memory device and memory device heat treatment method
08/20/2009WO2009102100A1 Memory data detecting apparatus and method for controlling reference voltage based on error in stored data
08/20/2009WO2009101483A1 Semiconductor device and method for storing data
08/20/2009US20090207667 Nand flash memory array with cut-off gate line and methods for operating and fabricating the same
08/20/2009US20090207666 Methods of Restoring Data in Flash Memory Devices and Related Flash Memory Device Memory Systems
08/20/2009US20090207665 Non-volatile one time programmable memory
08/20/2009US20090207664 Flash Memory Device for Variably Controlling Program Voltage and Method of Programming the Same
08/20/2009US20090207663 Flash Memory Devices Including Ready/Busy Control Circuits and Methods of Testing the Same
08/20/2009US20090207662 Multi-Transistor Non-Volatile Memory Element
08/20/2009US20090207661 Segmented bitscan for verification of programming
08/20/2009US20090207660 Program method of flash memory device
08/20/2009US20090207659 Memory device and memory data read method
08/20/2009US20090207658 Operating method of memory device
08/20/2009US20090207657 Multi level inhibit scheme
08/20/2009US20090207656 Operating method of memory
08/20/2009US20090207655 Multiple time programmable (mtp) pmos floating gate-based non-volatile memory device for a general purpose cmos technology with thick gate oxide
08/20/2009US20090206382 Flash memory device and programming and erasing methods therewith
08/20/2009DE112007001750T5 Phasenwechselspeicherbauelement Phase change memory device
08/19/2009EP2091153A1 Voltage switching circuit
08/19/2009EP2089887A1 Read enhancement for memory
08/19/2009EP1869681B1 Use of data latches in multi-phase programming of non-volatile memories
08/19/2009EP1476812A4 Pipelined parallel programming operation in a non-volatile memory system
08/19/2009CN101512668A Pseudo random and command driven bit compensation for the cycling effects in flash memory and methods therefor
08/19/2009CN101512667A Compensating for coupling during programming
08/19/2009CN101512666A Non-volatile memory and method for linear estimation of initial programming voltage
08/19/2009CN101512665A Non-volatile memory and method for reduced erase/write cycling during trimming of initial programming voltage
08/19/2009CN101512664A Nonvolatile semiconductor memory device and read, write and delete method thereof
08/19/2009CN101512663A Method and apparatus for reading a multi-level passive element memory cell array
08/19/2009CN101512661A Combined distortion estimation and error correction coding for memory devices
08/19/2009CN101512660A Detecting radiation-based attacks
08/19/2009CN101510442A Operating method of memory device
08/19/2009CN101510441A Operating method of memory device
08/19/2009CN101510440A Flash memory device
08/19/2009CN100530435C System and method for erase of non-volatile memory
08/19/2009CN100530434C Current and voltage conversion circuit and nonvolatile semiconductor storage device
08/19/2009CN100530433C Information setting method for nonvolatile storage device and nonvolatile storage device
08/19/2009CN100530432C Resistance variable memory device and method of fabrication
08/19/2009CN100530431C Device regulation and circuit offuse reference resistance regulation and electric device regulation method
08/19/2009CN100530430C Flash memory architecture with page mode erase using NMOS and PMOS row decoding scheme
08/19/2009CN100530423C Memory device
08/19/2009CN100530416C Dibit dielectric memory unit array and method for detecting charge stored in the array
08/19/2009CN100530413C Non-volatile semiconductor memory, electronic card and electronic device
08/19/2009CN100530326C Display device
08/19/2009CN100530070C Hard disk based on FLASH
08/19/2009CN100530021C Low voltage CMOS bandgap reference
08/18/2009US7577880 Multilevel semiconductor memory, write/read method thereto/therefrom and storage medium storing write/read program
08/18/2009US7577043 Voltage regulator for semiconductor memory
08/18/2009US7577040 Dual port memory device with reduced coupling effect
08/18/2009US7577037 Use of data latches in cache operations of non-volatile memories
08/18/2009US7577036 Non-volatile multilevel memory cells with data read of reference cells
08/18/2009US7577035 Apparatus and method for improving write/read endurance of non-volatile memory
08/18/2009US7577033 Method and circuit for performing read operation in a NAND flash memory
08/18/2009US7577029 Multi-level cell access buffer with dual function
08/18/2009US7577026 Source and drain side early boosting using local self boosting for non-volatile storage
08/13/2009WO2009097693A1 Selective broadcasting of data in series connected devices
08/13/2009WO2009097681A1 Flexible memory operations in nand flash devices
08/13/2009WO2009097677A1 Non-volatile memory device having configurable page size
08/13/2009WO2009070406A3 Method and apparatus for reading data from flash memory
08/13/2009US20090204750 Direct logical block addressing flash memory mass storage architecture
08/13/2009US20090201744 Method For Erasing A Flash Memory Cell Or An Array Of Such Cells Having Improved Erase Coupling Ratio
08/13/2009US20090201743 Multiwalled carbon nanotube memory device
08/13/2009US20090201742 Single-polycrystalline silicon electrically erasable and programmable nonvolatile memory device
08/13/2009US20090201741 Non-volatile memory cell with injector
08/13/2009US20090201740 Integrated circuit, method to program a memory cell array of an integrated circuit, and memory module
08/13/2009US20090201739 Method for driving semiconductor device, and semiconductor device
08/13/2009US20090201738 Semiconductor memory device
08/13/2009US20090201737 Nonvolatile semiconductor memory device
08/13/2009US20090201736 Increased nand flash memory read throughput
08/13/2009US20090201735 Non-volatile memory apparatus for controlling page buffer and controlling method thereof
08/13/2009US20090201734 Verified purge for flash storage device
08/13/2009US20090201733 Flash memory device
08/13/2009US20090201732 System and method for purging a flash storage device
08/13/2009US20090201731 Method and Apparatus for Accessing Memory With Read Error By Changing Comparison
08/13/2009US20090201730 Method and apparatus of operating a non-volatile DRAM
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