Patents
Patents for G11C 16 - Erasable programmable read-only memories (44,373)
01/2015
01/22/2015US20150023103 Semiconductor device and method of operating the same
01/22/2015US20150023102 Nonvolatile semiconductor memory device
01/22/2015US20150023101 Memory system and method of controlling memory system
01/22/2015US20150023100 Dynamic Regulation of Memory Array Source Line
01/22/2015US20150023099 Direct multi-level cell programming
01/22/2015US20150023098 Operation method of multi-level memory
01/22/2015US20150023097 Partial reprogramming of solid-state non-volatile memory cells
01/22/2015DE112010002663B4 Speichermanagementsysteme, Verfahren zur Verbesserung der Schreib-Lösch-Ausdauerlebenszeit von Speichervorrichtungen und Computerprogrammprodukt Memory management systems, methods for improving the write-erase endurance lifetime of storage devices, and computer program product
01/22/2015DE102013214214A1 Verfahren zum Löschen von Informationen und Vorrichtung zur Durchführung desselben The same method of erasing information and device for carrying out
01/22/2015DE102005036819B4 Leseverstärkerschaltung Sense amplifier circuit
01/21/2015EP2826036A1 A non-volatile memory device and a method of operating same
01/21/2015CN104302100A 焊垫结构及应用其的印刷电路板与存储器存储装置 Bonding pad structure and application of a printed circuit board and its memory storage means
01/21/2015CN104299651A 闪存的位线选择管电路 Flash bit line selection transistor circuits
01/21/2015CN104299650A 一种改进型选择栅驱动电路 Select an improved gate drive circuit
01/21/2015CN104299649A 非易失性存储器(nvm)系统的自适应擦除恢复 Adaptive non-volatile memory (nvm) system Erase Resume
01/21/2015CN104299648A 一种差分架构只读存储单元 Read-only memory cell structure of A Difference
01/21/2015CN104299647A 负压转换电路 Negative conversion circuit
01/21/2015CN104299646A 基于标准工艺的超低功耗非易失性存储器 Based on the standard process of ultra-low power non-volatile memory
01/21/2015CN102737720B 抑制快闪存储器响应外部命令时漏电的方法与装置 Inhibiting response to an external command leakage method and apparatus for flash memory
01/21/2015CN102237139B 计算补偿电压与调整阀值电压方法及存储器装置与控制器 Calculation of compensation voltage and threshold voltage adjustment method and memory device and a controller
01/21/2015CN101923895B 具有多电平的相变存储器设备 Phase change memory devices having a multi-level
01/21/2015CN101740127B 非易失性存储器件的编程方法 Programming non-volatile memory device
01/20/2015US8938658 Statistical read comparison signal generation for memory systems
01/20/2015US8938655 Extending flash memory data retension via rewrite refresh
01/20/2015US8937838 Finding optimal read thresholds and related voltages for solid state memory
01/20/2015US8937837 Bit line BL isolation scheme during erase operation for non-volatile storage
01/20/2015US8937836 Line voltage boost system and method for non-volatile memory devices and memory devices and processor-based system using same
01/20/2015US8937835 Non-volatile storage with read process that reduces disturb
01/20/2015US8937834 Method of maintaining the state of semiconductor memory having electrically floating body transistor
01/20/2015US8937833 Semiconductor memory device including memory cells and a peripheral circuit and method of operating the same
01/20/2015US8937727 Portable handheld device with multi-core image processor
01/20/2015US8937346 Semiconductor device
01/20/2015US8937340 Silicon on insulator and thin film transistor bandgap engineered split gate memory
01/15/2015WO2015005636A1 Memory system and data processing method for memory
01/15/2015WO2015005635A1 Memory system and method for processing data in memory
01/15/2015WO2015004715A1 Semiconductor storage device and method for controlling same
01/15/2015WO2015004714A1 Semiconductor storage device
01/15/2015WO2015004712A1 Semiconductor storage device provided with lock-out mode and no-lock-out mode
01/15/2015WO2015004708A1 Semiconductor storage device, and method for reading stored data
01/15/2015US20150016192 Method of using non-volatile memories for on-dimm memory address list storage
01/15/2015US20150016191 Data storage device and flash memory control method
01/15/2015US20150016190 Nonvolatile semiconductor memory device
01/15/2015US20150016189 Semiconductor memory device and method of operating the same
01/14/2015EP2824708A1 Non volatile memory cell, method for programming, erasing and reading such a cell and non volatile memory device
01/14/2015EP2823486A1 Voltage mode sensing for low power flash memory
01/14/2015EP2823485A1 Flash memory with integrated rom memory cells
01/14/2015EP2823484A1 Composed memory array comprising a flash array and a ram array with data write to the ram array and data read from the flash array
01/14/2015CN204102574U 一种快闪存储器 One kind of flash memory
01/14/2015CN104285257A 非易失性存储器装置及其操作方法 Non-volatile memory device and operating method thereof
01/14/2015CN104282761A 垂直沟道存储器及其制造方法与应用其的操作方法 A vertical channel memory and a manufacturing method thereof and application method of operation
01/14/2015CN104282340A 一种固态盘闪存芯片阈值电压感知方法及系统 A solid-state disk flash chip threshold voltage sensing method and system
01/14/2015CN104282339A 读取电压设定方法、控制电路与存储器储存装置 Read voltage setting method, and a memory storage device control circuit
01/14/2015CN104282338A 一种非易失性存储器上电的方法及装置 A non-volatile memory on power method and apparatus
01/14/2015CN104282337A 存储设备及其写方法 Storage device and writing method
01/14/2015CN104282336A 半导体存储装置及闪存存储器的编程方法 Programming method for a semiconductor memory device and flash memory
01/14/2015CN104282335A 非易失性半导体存储装置 Nonvolatile semiconductor memory device
01/14/2015CN104282334A 内存储存电路及驱动内存储存电路的方法 Memory storage circuit and method for driving memory storage circuit
01/14/2015CN102568577B 与cmos逻辑工艺兼容的非挥发性记忆体阵列及操作方法 Non-volatile memory array and method of operation is compatible with the cmos logic process
01/14/2015CN102385924B 借助非易失性存储器的循环的开始编程电压偏移 With the non-volatile memory cycle start programming voltage offset
01/14/2015CN102369579B 非易失性存储器的温度警报和低速率刷新 And low temperature alarm nonvolatile memory refresh rate
01/14/2015CN101632068B 半导体存储装置 The semiconductor memory device
01/13/2015US8935595 LDPC erasure decoding for flash memories
01/13/2015US8935461 Memory unit outputting a required time for a rewrite and method for controlling CPU
01/13/2015US8934309 Semiconductor integrated circuit and semiconductor physical quantity sensor device
01/13/2015US8934305 Nonvolatile memory device, method of operating the same and electronic device including the same
01/13/2015US8934304 Operating method of nonvolatile memory device and operating method of memory system including nonvolatile memory device
01/13/2015US8934303 Semiconductor memory device and method of operating the same
01/13/2015US8934302 Nonvolatile memory having stacked structure and related method of operation
01/13/2015US8934300 Memory array structure and operating method and manufacturing method for the same
01/13/2015US8934299 Memory element and programmable logic device
01/13/2015US8934298 Nonvolatile memory device and related programming method
01/13/2015US8934297 Method and system for programming non-volatile memory cells based on programming of proximate memory cells
01/13/2015US8933502 3D non-volatile memory with metal silicide interconnect
01/13/2015US8933500 EEPROM-based, data-oriented combo NVM design
01/08/2015WO2015002901A1 Detecting programmed word lines based on nand string current
01/08/2015WO2015002897A1 Write operations for defect management in nonvolatile memory
01/08/2015WO2015002481A1 Apparatus and method for managing buffer having three states on the basis of flash memory
01/08/2015US20150012672 Ic card and ic card system having suspend/resume functions
01/08/2015US20150009764 Output circuit and semiconductor storage device
01/08/2015US20150009763 Semiconductor storage device
01/08/2015US20150009762 Switch and semiconductor device including the switch
01/08/2015US20150009761 Clock mode determination in a memory system
01/08/2015US20150009760 Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance
01/08/2015US20150009759 Substrate connection of three dimensional nand for improving erase performance
01/08/2015US20150009758 Semiconductor memory device and method of operating the same
01/08/2015US20150009757 Array arrangement including carrier source
01/08/2015US20150009756 Sensing operations in a memory device
01/08/2015US20150009755 Nonvolatile semiconductor memory device
01/08/2015US20150009754 Partial block erase architecture for flash memory
01/08/2015US20150008496 Temperature compensation method for high-density floating-gate memory
01/08/2015DE102012101343B4 Mobiler Datenträger und Steuerprogramm dafür Mobile data carrier and control program for
01/08/2015DE102005038939B4 Halbleiterspeicherbauelement mit oberseitig selbstjustiert angeordneten Wortleitungen und Verfahren zur Herstellung von Halbleiterspeicherbauelementen The semiconductor memory device with self-aligned on the upper side disposed word lines and methods for the production of semiconductor memory devices
01/07/2015CN204087809U 一种固态硬盘数据安全擦除设备 A solid-state hard disk data erase device security
01/07/2015CN104272393A 为存储器的块调整编程步长的系统和方法 Adjust the step size of the programming system and method for a memory block
01/07/2015CN104272390A 包括闪存阵列和ram阵列的组成的存储器阵列且其具有数据写入ram阵列和从闪存阵列读取数据 Flash memory array includes an array of arrays composed and ram and ram it has data written to and read from the flash memory array array data
01/07/2015CN104272388A 存储器装置的超深断电模式 Ultra-deep power-down mode memory device
01/07/2015CN104269189A 一种微功耗eeprom灵敏放大器电路 A micro-power amplifier circuit eeprom sensitive
01/07/2015CN104269188A 具有双单元结构的otp或mtp存储模块 Otp or mtp memory module with dual cell structure
01/07/2015CN104269187A 可以查空的双单元结构的otp或mtp存储模块 Otp or mtp memory module can check the empty two-unit structure
01/07/2015CN102779551B 数据写入方法、存储器控制器与存储器储存装置 Data write method, the memory controller and memory storage device
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