Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or
Patents for G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663)
11/2010
11/03/2010EP2245631A1 Memory cell, and memory device
11/03/2010CN1996495B Bit unit of organic memory
11/03/2010CN1894751B Method for initializing resistance-variable material, memory device containing a resistance-variable material, and method for initializing nonvolatile memory circuit including variable resistor
11/03/2010CN101878507A Method for driving resistance change element, initial processing method, and nonvolatile storage device
11/02/2010US7826249 Three dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array
11/02/2010US7826247 Method for initializing resistance-variable material, memory device containing a resistance-variable material, and method for initializing nonvolatile memory circuit including variable resistor
11/02/2010US7825547 Electret device and electrostatic operating apparatus
11/02/2010US7825408 Semiconductor device
11/02/2010US7825394 Light stimulating and collecting methods and apparatus for storage-phosphor image plates
10/2010
10/28/2010WO2010123978A1 Reduced complexity array line drivers for 3d matrix arrays
10/28/2010WO2010123657A1 Write method of a cross point non-volatile memory cell with diode
10/28/2010WO2010123517A1 Memory system with data line switching scheme
10/27/2010EP2243138A1 Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices
10/26/2010US7820502 Methods of fabricating vertical carbon nanotube field effect transistors for arrangement in arrays and field effect transistors and arrays formed thereby
10/21/2010WO2010119671A1 Resistance-change non-volatile memory device
10/21/2010WO2010119124A1 Organic non-volatile memory device
10/20/2010EP2240935A1 Semiconductor memory device and memory cell voltage application method
10/20/2010EP1334556B1 Magnetic logic elements
10/20/2010CN101868855A Memory cell
10/20/2010CN101866941A Resistance change memory device and operation method of the same
10/19/2010US7817458 Hybrid circuit having nanotube memory cells
10/19/2010US7816665 conductor/semiconductor substrate (gold, silver, copper, nickel, platinum, palladium, indium tin oxide and yttrium-barium-copper oxide), self-assembled monolayer disposed thereon comprising ferrocene
10/19/2010CA2417992C Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
10/14/2010WO2010117914A1 Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
10/14/2010WO2010117912A1 Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture
10/14/2010WO2010117911A2 Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
10/14/2010WO2010116754A1 Method of driving non-volatile memory elements
10/14/2010US20100262791 Software refreshed memory device and method
10/14/2010DE102004007633B4 Speicherzelle, Halbleiter-Speicherbauelement und Verfahren zur Herstellung einer Speicherzelle Memory cell, the semiconductor memory device and method for fabricating a memory cell
10/13/2010EP2239794A2 Nanoscopic wire-based devices, arrays, and methods of their manufacture
10/13/2010EP1390295B1 Nanotube array and method for producing a nanotube array
10/13/2010CN1864230B Self assembly of conducting polymer for formation of polymer memory cell
10/12/2010US7813161 Dual port SRAM with dedicated read and write ports for high speed read operation and low leakage
10/07/2010WO2010114832A1 Programming non-volatile storage element using current from other element
10/07/2010WO2010114831A1 Writing a multibit resistance-switching memory cell including a dummy resistance, resistance switching elements and diodes
10/07/2010DE102008019860B4 Vorrichtung, Verfahren und Verwendung des Verfahrens zur Erzeugung von schaltbarem temporärem Magnetismus in oxidischen Materialien mittels elektrischer Felder The device, method and use of the method for producing switchable temporary magnetism in oxidic materials by means of electrical fields
10/05/2010US7807991 Switching element
09/2010
09/30/2010WO2010109876A1 Method of driving resistance-change element, and non-volatile memory device
09/30/2010WO2010109803A1 Resistance-change non-volatile memory device
09/30/2010US20100243990 Nanosensors
09/29/2010EP2232499A1 Large capacity one-time programmable memory cell using metal oxides
09/29/2010EP2232498A1 Nonvolatile semiconductor memory device
09/28/2010US7804205 Electret device and electrostatic operating apparatus
09/23/2010WO2010107099A1 Semiconductor memory device and control method of the same
09/23/2010WO2010106876A1 Nonvolatile memory and reconfigurable circuit
09/22/2010EP2230667A1 Storage device and information re-recording method
09/21/2010US7799598 Processing systems and methods for molecular memory
09/16/2010US20100230731 Circuitry and method
09/15/2010EP2227827A1 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
09/15/2010EP2227825A2 Memory cell with planarized carbon nanotube layer and methods of forming the same
09/15/2010EP2227824A2 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
09/15/2010EP1194960B1 Nanoscopic wire-based devices, arrays, and methods of their manufacture
09/15/2010CN101836296A Variable resistance nonvolatile memory device and memory cell formation method
09/15/2010CN101388435B Resistive random access memory and method for manufacturing the same
09/14/2010USRE41693 Magnetic switching of charge separation lifetimes in artificial photosynthetic reaction centers
09/14/2010US7796425 Control of set/reset pulse in response to peripheral temperature in PRAM device
09/14/2010US7795068 Method of making integrated circuit (IC) including at least one storage cell
09/08/2010CN101828236A Nonvolatile semiconductor memory device
09/08/2010CN101828235A Nonvolatile semiconductor memory device
09/08/2010CN101828234A Information processing system
09/08/2010CN101300678B Semiconductor memory device having cross-point structure
09/02/2010WO2010080437A3 Memory cell comprising a diode connected to at least three resistivity-switching elements and methods of fabricating and reading the same
09/02/2010US20100219391 Layered resistance variable memory device and method of fabrication
09/01/2010EP2224508A2 Nanoscopic wire-based devices, arrays, and methods of their manufacture
08/2010
08/31/2010US7786470 Switching element
08/26/2010US20100214833 Semiconductor device
08/25/2010EP2221829A1 Static random access memories having carbon nanotube thin films
08/25/2010EP2221828A1 Molecular memory devices and methods
08/25/2010EP1550922B1 Hologram recording device
08/25/2010CN101816079A Nanotube device
08/25/2010CN101330128B Organic non-volatile memory material and memory device
08/24/2010US7782652 Volatile nanotube-based switching elements with multiple controls
08/19/2010US20100208507 Luminescence device and method of manufacturing the same
08/18/2010CN1697195B Memory element and memory device
08/18/2010CN101809669A Phase change memory structures
08/18/2010CN101351888B Electric element, memory device and semiconductor integrated circuit
08/18/2010CN101026177B Nonvolatile memory device and its operating method
08/17/2010US7777222 Nanotube device structure and methods of fabrication
08/11/2010EP2215635A1 Charge carrier stream generating electronic device and method
08/11/2010CN101802922A Resistance-changing memory device
08/11/2010CN101802921A Nonvolatile storage apparatus and method for writing data into nonvolatile storage apparatus
08/11/2010CN101798057A Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
08/10/2010US7773493 Probe-based storage device
08/05/2010WO2010086550A1 Novel material with spin transition, and method for making same
08/05/2010DE102009054003A1 Integrated circuit for use as e.g. conductive bridge RAM in data processing system, which is utilized for e.g. cellular communication, has voltage limitation-switching network limiting voltage, when circuit is found in read mode
08/04/2010EP2212887A1 Three-dimensional memory module architectures
08/04/2010EP1588375B1 Organic storage component
08/04/2010CN101796588A 3d r/w cell with reduced reverse leakage and method of making thereof
08/04/2010CN101794807A Nonvolatile memory device comprising a switching device and a resistant material and method of manufacturing the same
08/04/2010CN101075630B Phase change memory device and manufacturing method
08/03/2010US7768861 Software refreshed memory device and method
08/03/2010US7768815 Optoelectronic memory devices
07/2010
07/29/2010WO2010084774A1 Nonvolatile memory cell, resistance variable nonvolatile memory device and method for designing nonvolatile memory cell
07/29/2010US20100188877 Storage device
07/28/2010EP1894146B1 A data storage device
07/22/2010WO2010083087A1 Non-volatile memory circuit including voltage divider with phase change memory devices
07/22/2010US20100182821 Memory device, memory circuit and semiconductor integrated circuit having variable resistance
07/21/2010EP1733398B1 Circuit for accessing a chalcogenide memory array
07/21/2010CN101295763B Resistive memory device and stack structure of resistive random access memory device
07/15/2010WO2010080437A2 Quad memory cell and method of making same
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