| Patents for G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663) |
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| 03/29/2012 | WO2012038874A2 Memory diodes |
| 03/29/2012 | WO2011156343A3 Non-volatile memory having 3d array of read/write elements and read/write circuits and method thereof |
| 03/29/2012 | DE102011082182A1 Zustandsbestimmung von Phasenwechselspeicher unter Verwendung von Schwellwertflakendetektion State determination of phase change memory using Schwellwertflakendetektion |
| 03/28/2012 | EP2434340A1 Systems and methods for improving the performance of a photorefractive device |
| 03/28/2012 | EP2433282A2 Optical memory device and method of recording/reproducing information by using the same |
| 03/28/2012 | EP1598877B1 Switching element |
| 03/28/2012 | CN102394095A AC sensing for a resistive memory |
| 03/28/2012 | CN101164117B Multiplexer interface to a nanoscale-crossbar |
| 03/27/2012 | US8143703 Methods and devices for forming nanostructure monolayers and devices including such monolayers |
| 03/27/2012 | US8143610 Semiconductor phase-change memory device |
| 03/22/2012 | WO2012001599A3 Carbon- based resistive memory element and manufacturing thereof |
| 03/22/2012 | US20120068141 Silver-selenide/chalcogenide glass stack for resistance variable memory |
| 03/21/2012 | CN1714407B Control of memory arrays utilizing zener diode-like devices |
| 03/21/2012 | CN102386325A Non-volatile memory elements and memory devices including the same |
| 03/21/2012 | CN101233578B Semiconductor memory |
| 03/15/2012 | WO2012032775A1 Method of checking resistance change non-volatile memory device, and resistance change non-volatile memory device |
| 03/15/2012 | WO2012032730A1 Semiconductor storage device |
| 03/15/2012 | US20120064691 Method For Fabricating Multi Resistive State Memory Devices |
| 03/15/2012 | US20120063253 Optical memory device and method of recording/reproducing information by using the same |
| 03/14/2012 | CN102376886A Nonvolatile memory elements and memory devices including the same |
| 03/14/2012 | CN102376355A Memory device |
| 03/14/2012 | CN102376354A 存储元件和存储装置 Memory element and the memory device |
| 03/14/2012 | CN101154667B Semiconductor memory device and method of controlling the same |
| 03/08/2012 | WO2012029007A1 Cell-state determination in phase-change memory |
| 03/07/2012 | EP1468422B1 Pcram rewrite prevention |
| 03/06/2012 | US8130533 Thermoelectric device and method |
| 03/06/2012 | US8129869 Electret and electrostatic induction conversion device |
| 03/01/2012 | WO2012026507A1 Drive method for memory element and storage device using memory element |
| 03/01/2012 | WO2012026506A1 Drive method for memory element, and storage device using memory element |
| 02/29/2012 | EP2422345A1 Memory system with data line switching scheme |
| 02/29/2012 | EP1356267B1 Light stimulating and collecting methods and apparatus for storage-phosphor image plates |
| 02/29/2012 | CN1759450B Programmable resistance memory device |
| 02/29/2012 | CN101208752B Nonvolatile memory cell comprising a diode and a resistance-switching material |
| 02/28/2012 | US8125039 One-time programmable, non-volatile field effect devices and methods of making same |
| 02/23/2012 | WO2012024237A1 Single device driver circuit to control three-dimensional memory element array |
| 02/23/2012 | WO2012024079A2 Variable resistance memory array architecture |
| 02/23/2012 | WO2012023266A1 Changing resistance-type nonvolatile memory device |
| 02/22/2012 | EP2126625B1 Systems and methods for improving the performance of a photorefractive device |
| 02/16/2012 | WO2012019806A1 Method and assembly for exciting spin waves in magnetic solid bodies |
| 02/15/2012 | EP2417600A2 Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines |
| 02/15/2012 | EP2417599A1 Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture |
| 02/15/2012 | EP2417598A1 Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture |
| 02/15/2012 | EP1218878B1 Method and system for laser writing microscopic data spots on cards and labels readable with a ccd array |
| 02/15/2012 | CN101292300B 纳米级移位寄存器和使用微米级/纳米级移位寄存器的信号解复用 Nanoscale shift register and using the micron / nanoscale shift register signal demultiplexing |
| 02/14/2012 | US8116128 Semiconductor device |
| 02/14/2012 | US8114589 Self-addressable self-assembling microelectronic integrated systems, component devices, mechanisms, methods, and procedures for molecular biological analysis and diagnostics |
| 02/09/2012 | US20120033481 Memory Element With A Reactive Metal Layer |
| 02/08/2012 | EP2415054A1 Programming non-volatile storage element using current from other element |
| 02/08/2012 | EP2415053A1 Write method of a cross point non-volatile memory cell with diode |
| 02/08/2012 | EP2415052A1 Writing a multibit resistance-switching memory cell including a dummy resistance, resistance switching elements and diodes |
| 02/08/2012 | CN102347443A Non-volatile memory element and memory device including same |
| 02/07/2012 | US8112700 Nanoscale interconnection interface |
| 02/02/2012 | WO2012014505A1 Nonvolatile memory and storage device |
| 02/02/2012 | DE102011079909A1 Schreiboperation für Phasenübergangsspeicher Write operation for phase-change memory |
| 02/02/2012 | DE102011012738B3 Memory element selecting method, involves encoding states of memory element in stable conditions, respectively, and selecting variable, where cell in one of states carries out respective contributions than another cell in other state |
| 02/01/2012 | CN102341862A Semiconductor memory device and control method of the same |
| 02/01/2012 | CN102339952A Memory element and drive method for the same, and memory device |
| 02/01/2012 | CN101405796B 全息存储材料 Holographic storage material |
| 01/26/2012 | WO2012011161A1 Semiconductor storage device |
| 01/26/2012 | DE102008011069B4 Integrierte Schaltung sowie Verfahren zum verbesserten Bestimmen eines Speicherzustands einer Speicherzelle Integrated circuit and method for determining an improved memory state of a memory cell |
| 01/25/2012 | EP2410531A2 Non-volatile memory element and memory device including the same |
| 01/24/2012 | US8102697 Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array |
| 01/24/2012 | US8101983 Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same |
| 01/24/2012 | US8101976 Device selection circuitry constructed with nanotube ribbon technology |
| 01/18/2012 | EP2407976A2 Non-volatile re-programmable memory device |
| 01/18/2012 | EP2277175B1 Apparatus and method for producing switchable temporary magnetism in oxidic materials by means of electrical fields |
| 01/18/2012 | CN1898749B Memory device, memory circuit and semiconductor integrated circuit having variable resistance |
| 01/12/2012 | WO2011134079A8 Phase change memory array blocks with alternate selection |
| 01/11/2012 | EP2405441A1 Resistive memory using SiGe material |
| 01/11/2012 | CN102315242A Resistive memory using sige material |
| 01/11/2012 | CN102315172A Method for realization of crossbar array of crossed conductive or semi-conductive access lines |
| 01/11/2012 | CN101506980B Nonvolatile semiconductor storage device and method for manufacturing the same |
| 01/10/2012 | US8095768 VSAM smart reorganization |
| 01/05/2012 | WO2012001960A1 Nonvolatile memory cell, nonvolatile memory cell array, and method for manufacturing the nonvolatile memory cell array |
| 01/05/2012 | WO2012001944A1 Non-volatile memory device and drive method therefor |
| 01/04/2012 | EP2402953A1 Phase change memory coding before packaging |
| 01/04/2012 | EP1955325B1 Molecular quantum memory |
| 01/04/2012 | CN102306706A Multi-resistance-state resistance random access memory and method for implementing multiple resistance states utilizing same |
| 12/29/2011 | US20110315962 Nanosensors |
| 12/29/2011 | DE102011075812A1 Gestaffeltes Programmieren für resistive Speicher Staggered programming for resistive memory |
| 12/28/2011 | EP2400499A1 Variable resistance devices, semiconductor devices including the variable resistance devices, and methods of operating the semiconductor devices |
| 12/28/2011 | EP1747558B1 A composition of matter which results in electronic switching through intra- or inter- molecular charge transfer between molecules and electrodes induced by an electrical field |
| 12/28/2011 | CN102301425A 电阻变化元件的驱动方法、初始处理方法、以及非易失性存储装置 Method of driving resistance variable element, an initial treatment, and non-volatile memory device |
| 12/28/2011 | CN102298965A 一种含视黄醛膜蛋白的微阵列及其制备方法和应用 Containing retinal membrane protein microarray and its preparation method and application |
| 12/28/2011 | CN101343371B 含氟的环烯烃驻极体薄膜 The fluorine-containing cycloolefin electret film |
| 12/27/2011 | US8085578 Method and system for coding and read out of information in a microscopic cluster comprising coupled functional islands |
| 12/27/2011 | US8084768 Semiconductor device |
| 12/27/2011 | US8084762 Resistive memory |
| 12/22/2011 | WO2011159705A2 Write and erase scheme for resistive memory device |
| 12/22/2011 | WO2011158887A1 Semiconductor device and operation method for same |
| 12/22/2011 | WO2011158821A1 Semiconductor device and manufacturing method for semiconductor device |
| 12/20/2011 | US8080816 Silver-selenide/chalcogenide glass stack for resistance variable memory |
| 12/15/2011 | WO2011156357A1 Non-volatile memory having 3d array of read/write elements with efficient decoding of vertical bit lines and word lines |
| 12/15/2011 | WO2011156351A1 Non-volatile memory having 3d array of read/write elements with vertical bit lines and laterally aligned active elements and methods thereof |
| 12/15/2011 | WO2011156343A2 Non-volatile memory having 3d array of read/write elements and read/write circuits and method thereof |
| 12/15/2011 | WO2011155210A1 Non-volatile memory element and non-volatile memory device equipped with same |
| 12/14/2011 | CN1868002B 具有多个控件的基于纳米管的开关元件及由其制成的电路 Based on circuit switching element and nanotubes made therefrom have multiple controls |
| 12/14/2011 | CN102282623A 包括具有相变存储器件的分压器的非易失存储器电路 Include non-volatile memory circuit having a phase change memory element of the voltage divider |
| 12/14/2011 | CN102280577A 单极阻变器件、单极阻变存储器单元及制备方法 Unipolar resistive switching devices, memory cells and preparation methods unipolar resistive |
| 12/14/2011 | CN102280139A 使用具有可重新编程电阻的纳米管制品的存储器阵列 Resistance can be reprogrammed using a nanotube array memory products |