| Patents for G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663) |
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| 04/22/2008 | US7362687 Method and device for holographic recording |
| 04/22/2008 | US7362605 Nanoelectromechanical memory cells and data storage devices |
| 04/22/2008 | US7361924 Non-volatile memory element and production method thereof and storage memory arrangement |
| 04/17/2008 | WO2008044718A1 Two-dimensional encoder, holographic memory device and holographic memory medium |
| 04/17/2008 | WO2008044300A1 Semiconductor integrated circuit |
| 04/17/2008 | US20080089830 using inexpensive carbon feedstocks at moderate temperatures; high yield, single step method for producing large quantities of continuous macroscopic carbon fiber from molecular array of single-wall CNTs as a template; felt comprises bucky paper material |
| 04/17/2008 | US20080089154 Memory device |
| 04/17/2008 | US20080089108 Probe-based storage device |
| 04/16/2008 | EP1912212A1 Apparatus for collinear reading from and/or writing to holographic storage media |
| 04/16/2008 | EP1911036A1 Polyoxometallates in memory devices |
| 04/16/2008 | EP1911035A2 Program/erase waveshaping control to increase data retention of a memory cell |
| 04/16/2008 | EP1911034A1 Resitive memory device with improved data retention |
| 04/16/2008 | CN101164168A Electric element, memory device, and semiconductor integrated circuit |
| 04/16/2008 | CN101164167A Non volatile memory cell and semiconductor memory device |
| 04/16/2008 | CN101164117A Multiplexer interface to a nanoscale-crossbar |
| 04/16/2008 | CN100382320C Storage matrix layer and method for programming 3D RRAM |
| 04/15/2008 | US7359888 Molecular-junction-nanowire-crossbar-based neural network |
| 04/15/2008 | US7359587 Photonic interconnections that include optical transmission paths for transmitting optical signals |
| 04/15/2008 | US7359230 Nonvolatile memory device |
| 04/15/2008 | US7358113 Processing systems and methods for molecular memory |
| 04/10/2008 | WO2008041278A1 Semiconductor device |
| 04/10/2008 | DE10245554B4 Nanopartikel als Ladungsträgersenke in resistiven Speicherelementen Nanoparticles as charge carrier sink in resistive memory elements |
| 04/09/2008 | CN100380527C Once write film storage |
| 04/09/2008 | CN100380524C Electric field pulse inductive resistance element and semiconductor using the same |
| 04/09/2008 | CN100380147C Visual effect based on a micro-optical grid structure |
| 04/08/2008 | US7354647 Organic bistable element, organic bistable memory device using the same, and method for driving said organic bistable element and organic bistable memory device |
| 04/08/2008 | US7354563 Method for purification of as-produced fullerene nanotubes |
| 04/03/2008 | WO2008039166A2 Non-volatile switching and memory devices using vertical nanotubes |
| 04/02/2008 | CN101154667A Semiconductor memory device and method of controlling the same |
| 04/01/2008 | US7352660 Enhanced data storage and retrieval devices and systems and methods for utilizing the same |
| 04/01/2008 | US7352617 Nano tube cell and memory device using the same |
| 04/01/2008 | US7352608 Controllable nanomechanical memory element |
| 03/27/2008 | WO2008035432A1 Semiconductor storage device, method for manufacturing semiconductor storage device, writing method of semiconductor storage device, and reading method of semiconductor storage device |
| 03/27/2008 | WO2008035392A1 Semiconductor integrated circuit device |
| 03/27/2008 | WO2008016844A3 Non-volatile memory capable of correcting overwritten cell |
| 03/27/2008 | WO2008016420A3 Multi-use memory cell and memory array and method for use therewith |
| 03/27/2008 | DE102006042727A1 Memory unit e.g. magnetic RAM memory unit, for storing data, has potential supply unit supplying potential to amplifying circuits, such that leakage current through circuits is decreased or avoided in deactivated condition of circuits |
| 03/27/2008 | DE102004040750B4 Speicherzellenanordnung mit Speicherzellen vom CBRAM-Typ und Verfahren zum Programmieren derselben Memory cell array having memory cells of the CBRAM type and method of programming the same |
| 03/25/2008 | US7350132 Nanoscale interconnection interface |
| 03/25/2008 | US7349319 Information recording apparatus, recording media and recording method |
| 03/25/2008 | US7349246 Initial firing method and phase change memory device for performing firing effectively |
| 03/25/2008 | US7348206 Formation of self-assembled monolayers of redox SAMs on silicon for molecular memory applications |
| 03/20/2008 | WO2008032394A1 Semiconductor device |
| 03/20/2008 | US20080070162 Information storage elements and methods of manufacture thereof |
| 03/20/2008 | US20080067553 Electromechanical memory array using nanotube ribbons and method for making same |
| 03/20/2008 | DE202007017820U1 Sicherheitsanordnung Security arrangement |
| 03/19/2008 | EP1497485A4 Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
| 03/18/2008 | US7345944 Programmable detection of power failure in an integrated circuit |
| 03/13/2008 | WO2008030355A2 Programmable polyelectrolyte electrical switches |
| 03/13/2008 | WO2008029446A1 Writing method of nonvolatile semiconductor storage apparatus |
| 03/13/2008 | US20080063588 heating to remove amorphous carbon deposits and other impurities, then recovering and washing in nonionic surfactants |
| 03/13/2008 | US20080062755 Isolation structure for deflectable nanotube elements |
| 03/13/2008 | US20080062736 Storage device |
| 03/13/2008 | US20080062735 Nanoscale wire coding for stochastic assembly |
| 03/13/2008 | DE102006040570A1 Storage device has number of multi level storage cells, where each cell has number in levels, corresponding to 2n, where n is positive whole number, and another device combines levels of storage cells |
| 03/13/2008 | DE102006040238A1 Transistor arrangement for selecting one memory cell from multiple memory cells in substrate, has memory cell, and one wordline forms in one wordline trench of multiple gate electrodes at side panel of active areas of two adjacent set |
| 03/12/2008 | EP1668661A4 Phase angle controlled stationary elements for long wavelength electromagnetic radiation |
| 03/12/2008 | CN100375289C Diode-and-fuse storage cell for write primary memory containing anisotropic semiconductor thin plate |
| 03/11/2008 | US7343059 Photonic interconnect system |
| 03/11/2008 | US7342824 Method of programming a 3D RRAM |
| 03/11/2008 | US7342818 Hybrid circuit having nanotube electromechanical memory |
| 03/11/2008 | US7342817 System and method for writing data using an electron beam |
| 03/11/2008 | US7341892 Semiconductor memory cell and method of forming same |
| 03/06/2008 | US20080056042 Storage capacity optimization in holographic storage media |
| 03/05/2008 | EP1895540A1 Nonvolatile semiconductor storage device and write method therefor |
| 03/05/2008 | EP1894146A1 A data storage device |
| 03/04/2008 | US7339711 Angle-multiplexing hologram recording device, method, hologram reproduction device, and method |
| 03/04/2008 | US7339401 Nanotube-based switching elements with multiple controls |
| 03/04/2008 | US7339186 IC chip with nanowires |
| 02/28/2008 | WO2008024908A2 System and method for improved low flow medical pump delivery |
| 02/28/2008 | WO2008023637A1 Storage element, memory device and semiconductor integrated circuit |
| 02/27/2008 | EP1892723A1 Electrochemical memory device |
| 02/27/2008 | EP1892722A1 Information storage elements and methods of manufacture thereof |
| 02/27/2008 | CN101133503A Method for manufacturing an electrolyte material layer in semiconductor memory devices |
| 02/27/2008 | CN101132052A Information storage elements and methods of manufacture thereof |
| 02/27/2008 | CN101132048A Phase-change memory cell structure and fabrication method thereof |
| 02/27/2008 | CN100372027C Data write-in method for photoetching ROM |
| 02/26/2008 | US7336577 Apparatus and method for compensating wobble in holographic digital data storage system |
| 02/26/2008 | US7336523 Memory device using nanotube cells |
| 02/26/2008 | US7335907 Memory device |
| 02/26/2008 | US7335603 System and method for fabricating logic devices comprising carbon nanotube transistors |
| 02/26/2008 | US7335528 Methods of nanotube films and articles |
| 02/21/2008 | WO2008020944A2 Resistive memory device with two select transistors |
| 02/21/2008 | US20080044954 Methods of fabricating vertical carbon nanotube field effect transistors for arrangement in arrays and field effect transistors and arrays formed thereby |
| 02/21/2008 | DE112005001983T5 Systeme und Verfahren zum Einstellen der Programmierschwellwerte für Polymerspeicherzellen Systems and methods for adjusting the Programmierschwellwerte for polymer memory cells |
| 02/21/2008 | DE102006038899A1 Solid electrolyte memory cell has optional access and solid electrolyte block with three solid electrolyte contact areas, where electrodes are electrically connected with contact areas, which are spatially separated from each other |
| 02/20/2008 | EP1889308A1 Memory device with switching glass layer |
| 02/20/2008 | EP1889260A2 Memory arrays using nanotube articles with reprogrammable resistance |
| 02/20/2008 | EP1456840B1 A solid state microoptical electromechanical system (moems) for reading a photonics diffractive memory |
| 02/20/2008 | CN101128935A Semiconductor device |
| 02/20/2008 | CN100370313C Fourier transform optical system and volume holographic storage Fourier transform optical system |
| 02/19/2008 | US7333253 Multiplex recording type hologram recording device, method, hologram reproduction device, and method |
| 02/19/2008 | US7332401 Method of fabricating an electrode structure for use in an integrated circuit |
| 02/19/2008 | US7332369 Organic electronic devices |
| 02/14/2008 | US20080037349 Ultra low-cost solid-state memory |
| 02/14/2008 | DE10333557B4 Verfahren zur Herstellung einer Speichereinrichtung, Speicherzelle, Speichereinrichtung und Verfahren zum Betrieb der Speichereinrichtung A method of manufacturing a memory device, memory cell memory device and method of operating the memory device |
| 02/14/2008 | DE102004025675B4 Integrierter Halbleiterspeicher mit organischem Auswahltransistor Integrated semiconductor memory with organic selection transistor |
| 02/14/2008 | DE102004021227B4 Einmalig beschreibbarer Halbleiterspeicher auf der Basis molekularer selbstorganisierter Monolagen Write once semiconductor memory based on molecular self-assembled monolayers |
| 02/13/2008 | EP1488429B1 Novel method and structure for efficient data verification operation for non-volatile memories |
| 02/13/2008 | CN100369205C Method of forming a conductive line for a semiconductor device using a carbon nanotube and semiconductor device manufactured using the method |