| Patents for G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663) |
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| 03/05/2015 | WO2015031360A1 Memory controller for reducing capacitive coupling in a cross-point memory |
| 03/05/2015 | WO2015030937A1 Offset canceling dual stage sensing circuit |
| 03/05/2015 | WO2015028912A1 State-changeable device |
| 03/05/2015 | US20150063022 Apparatuses and methods involving accessing distributed sub-blocks of memory cells |
| 03/05/2015 | US20150063021 Memory controller for reducing capacitive coupling in a cross-point memory |
| 03/05/2015 | US20150063004 Method and apparatus for reforming a memory cell of a memory |
| 03/05/2015 | US20150063003 Semiconductor device |
| 03/05/2015 | US20150063002 Memory system |
| 03/03/2015 | US8971148 Word line selection circuit and row decoder |
| 03/03/2015 | US8971106 Nonvolatile semiconductor memory device including variable resistance element |
| 03/03/2015 | US8971105 Methods and apparatuses for controlling memory write sequences |
| 03/03/2015 | US8971104 Memory programming to reduce thermal disturb |
| 03/03/2015 | US8971093 Memory device and method of controlling memory device |
| 03/03/2015 | US8971092 Semiconductor memory device |
| 03/03/2015 | US8971091 Method and circuit for switching a memristive device in an array |
| 03/03/2015 | US8971090 Semiconductor memory device |
| 03/03/2015 | US8969168 Method for manufacturing variable resistance element |
| 03/03/2015 | US8969142 Switching materials comprising mixed nanoscopic particles and carbon nanotubes and methods of making and using the same |
| 02/26/2015 | US20150058566 Semiconductor memory apparatus |
| 02/26/2015 | US20150058524 Bimodal functionality between coherent link and memory expansion |
| 02/26/2015 | US20150055409 Seasoning Phase Change Memories |
| 02/26/2015 | US20150055408 Verify or read pulse for phase change memory and switch |
| 02/26/2015 | US20150055407 Set and reset operation in phase change memory and associated techniques and configurations |
| 02/26/2015 | US20150055397 Electronic device |
| 02/26/2015 | US20150055396 Resistance change memory |
| 02/26/2015 | US20150053910 Multistate Nonvolatile Memory Elements |
| 02/26/2015 | DE10250830B4 Verfahren zum Herstellung eines Schaltkreis-Arrays A method of manufacturing a circuit array |
| 02/24/2015 | US8964491 Graphene-based memory devices and methods therefor |
| 02/24/2015 | US8964488 Non-volatile memory device using variable resistance element with an improved write performance |
| 02/24/2015 | US8964462 Nonvolatile memory device using a threshold voltage switching material and method for manufacturing same |
| 02/24/2015 | US8964460 Semiconductor device having a non-volatile memory built-in |
| 02/24/2015 | US8964447 Nonvolatile semiconductor memory device |
| 02/24/2015 | US8964442 Integrated circuit 3D phase change memory array and manufacturing method |
| 02/24/2015 | US8963532 Reference current distribution |
| 02/24/2015 | US8963275 Resistive-switching device capable of implementing multiary addition operation and method for multiary addition operation |
| 02/24/2015 | US8963221 Strongly correlated nonvolatile memory element |
| 02/24/2015 | US8963117 Reduction of forming voltage in semiconductor devices |
| 02/24/2015 | US8963115 Memory device and method of manufacturing memory device |
| 02/19/2015 | US20150049561 Nonvolatile memory apparatus, and semiconductor system and computer device using the same |
| 02/19/2015 | US20150049543 Phase change memory word line driver |
| 02/19/2015 | US20150049538 Storage control device, storage device, information processing system, and storage control method |
| 02/19/2015 | US20150049537 Electronic device and method for fabricating the same |
| 02/19/2015 | US20150049536 Electronic device |
| 02/19/2015 | DE102013109523A1 Speicherzelle, die eine widerstandsvariable schicht aufweist sowie verfahren zur herstellung dieser Memory cell having a variable resistance layer, as well as processes for preparing these |
| 02/18/2015 | EP2837000A1 Apparatuses and methods for providing set and reset voltages at the same time |
| 02/18/2015 | EP2836999A1 Use of centrosymmetric mott insulators in a resistively switched memory for storing data |
| 02/17/2015 | US8959280 Super-endurance solid-state drive with endurance translation layer (ETL) and diversion of temp files for reduced flash wear |
| 02/17/2015 | US8958235 Semiconductor memory device |
| 02/17/2015 | US8958234 Selector type electronic device functioning by ionic conduction |
| 02/17/2015 | US8958230 Nonvolatile semiconductor memory device |
| 02/17/2015 | US8958229 Nonvolatile memory device and method of fabricating same |
| 02/17/2015 | US8957400 Phase-change memory cell |
| 02/17/2015 | US8957399 Nonvolatile memory element and nonvolatile memory device |
| 02/12/2015 | US20150043274 Memory with multiple levels of data retention |
| 02/12/2015 | US20150043268 Phase change memory device having multi-level and method of driving the same |
| 02/12/2015 | US20150043267 Variable resistance memory device and a variable resistance memory system including the same |
| 02/12/2015 | US20150043266 Enhanced temperature range for resistive type memory circuits with pre-heat operation |
| 02/12/2015 | DE102006033389B4 Phasenänderungsspeicherbauelement Phase change memory device |
| 02/12/2015 | DE102005063287B4 Phasenänderungsspeicherbauelement und Programmierverfahren Phase change memory device and programming method |
| 02/11/2015 | CN104347799A 电阻式存储器及其制造方法 Resistive memory and manufacturing method thereof |
| 02/11/2015 | CN104347662A 具有增强电场的三维双端存储器 D dual port memory with enhanced electric field |
| 02/11/2015 | CN104347115A 非易失性存储器件和利用非易失性存储器件的半导体系统 Nonvolatile semiconductor memory devices and systems utilize a non-volatile memory device |
| 02/11/2015 | CN104347113A 一种相变存储器的读出电路及读出方法 A phase change memory readout circuit and readout method |
| 02/11/2015 | CN102750980B 一种具有配置电路的相变存储器芯片 Circuit configuration having a phase change memory chips |
| 02/11/2015 | CN102569649B 具有阻变器件的半导体器件 Resistive device having a semiconductor device |
| 02/10/2015 | US8954654 Virtual memory device (VMD) application/driver with dual-level interception for data-type splitting, meta-page grouping, and diversion of temp files to ramdisks for enhanced flash endurance |
| 02/10/2015 | US8953387 Apparatuses and methods for efficient write in a cross-point array |
| 02/10/2015 | US8953372 Memory device readout using multiple sense times |
| 02/10/2015 | US8953370 Memory cell with decoupled read/write path |
| 02/10/2015 | US8953367 Three-dimensional memory array and operation scheme |
| 02/10/2015 | US8953363 Nonvolatile semiconductor memory device and read method for the same |
| 02/10/2015 | US8953362 Resistive devices and methods of operation thereof |
| 02/10/2015 | US8953360 Apparatus and method for reading a phase-change memory cell |
| 02/10/2015 | US8952493 Memory cell device and method of manufacture |
| 02/05/2015 | WO2015017281A1 Shared-gate vertical-tft for vertical bit line array |
| 02/05/2015 | WO2015016916A1 Voltage control for crosspoint memory structures |
| 02/05/2015 | US20150036415 Non-volatile memory cell |
| 02/05/2015 | US20150036414 Shared-gate vertical-tft for vertical bit line array |
| 02/05/2015 | US20150036413 Resistive memory element based on oxygen-doped amorphous carbon |
| 02/05/2015 | US20150036412 Nonvolatile memory device and semiconductor system using the same |
| 02/05/2015 | US20150036405 Memory Devices |
| 02/04/2015 | CN104335350A 低功率相变存储器单元 Low-power phase change memory cells |
| 02/04/2015 | CN104335284A 高操作速度的电阻型随机存取存储器 High operating speed of resistive random access memory |
| 02/04/2015 | CN104335283A 用于同时提供设置及复位电压的设备及方法 Set and reset voltages while providing apparatus and method for |
| 02/03/2015 | US8949693 Antipodal-mapping-based encoders and decoders |
| 02/03/2015 | US8947952 Input-output line sense amplifier having adjustable output drive capability |
| 02/03/2015 | US8947926 Semiconductor stack incorporating phase change material |
| 02/03/2015 | US8947925 Thyristor memory cell integrated circuit |
| 02/03/2015 | US8947924 Data readout circuit of phase change memory |
| 02/03/2015 | US8947923 Memory cells with rectifying device |
| 02/03/2015 | US8947909 System and method for creating a bipolar resistive RAM (RRAM) |
| 02/03/2015 | US8947908 Hetero-switching layer in a RRAM device and method |
| 02/03/2015 | US8947906 High-efficiency driving stage for phase change non-volatile memory devices |
| 02/03/2015 | US8947905 Nonvolatile memory devices and methods of driving the same |
| 02/03/2015 | US8945955 Method of changing reflectance or resistance of a region in an optoelectronic memory device |
| 01/29/2015 | WO2015013128A1 Resistance variable element methods and apparatuses |
| 01/29/2015 | WO2015013118A2 Thyristor memory cell integrated circuit |
| 01/29/2015 | WO2015012406A1 Multi-context configuration memory |
| 01/29/2015 | US20150029787 Non-Volatile Resistance-Switching Thin Film Devices |
| 01/29/2015 | US20150029780 Two-terminal reversibly switchable memory device |