| Patents for G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663) |
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| 02/24/2009 | US7496024 Hologram apparatus and hologram recording method |
| 02/19/2009 | WO2009022693A1 Storage device drive method |
| 02/19/2009 | WO2009022373A1 Semiconductor device and its manufacturing method |
| 02/19/2009 | US20090046337 Method of recording and reading angle-multiplexed holograms that compensates for media shrinkage |
| 02/19/2009 | US20090045473 Devices having horizontally-disposed nanofabric articles and methods of making the same |
| 02/19/2009 | US20090045390 Multi-resistive state memory device with conductive oxide electrodes |
| 02/18/2009 | EP2026353A2 AC sensing for a resistive memory |
| 02/18/2009 | EP1756954A4 Receiver circuit using nanotube-based switches and transistors |
| 02/18/2009 | CN101371313A Nonvolatile semiconductor memory device |
| 02/18/2009 | CN101369629A Solid electrolyte silver germanium oxygen thin film and preparation method and use thereof |
| 02/18/2009 | CN100463074C Memory core, method for accessing its unit cell and reading sulfur selenium tellurium glass memory |
| 02/17/2009 | US7492644 Semiconductor integrated circuit device |
| 02/17/2009 | US7492630 Systems for reverse bias trim operations in non-volatile memory |
| 02/17/2009 | US7491963 Non-volatile memory structure |
| 02/12/2009 | WO2009019000A1 Memory device |
| 02/12/2009 | US20090040805 Non-volatile memory device and method for fabricating the same |
| 02/12/2009 | DE10335813B4 IC-Chip mit Nanowires IC chip with nanowires |
| 02/11/2009 | EP2023418A1 Memory device |
| 02/11/2009 | EP2023393A1 Semiconductor device |
| 02/11/2009 | CN100461417C 半导体存储装置及其制造方法 The semiconductor memory device and manufacturing method thereof |
| 02/10/2009 | US7489552 Semiconductor integrated circuit device |
| 02/10/2009 | US7489537 Nano-electronic memory array |
| 02/10/2009 | US7488819 Coordination sites of four nitrogen-containing groups of of imino, amido and amino groups, and has the nitrogen atoms of the four nitrogen-containing groups as coordinating atoms in one plane; metal complex assembly; acceptor and a donor interacting with each other; nanostructure; semiconductors |
| 02/05/2009 | WO2009016824A1 Nonvolatile storage device |
| 02/05/2009 | DE102008034503A1 Datenhalteüberwachungseinrichtung Data hold monitoring device |
| 02/05/2009 | DE102008030858A1 Speicher mit dynamischer Redundanzkonfigurierung Memory with dynamic Redundanzkonfigurierung |
| 02/05/2009 | DE102007035857A1 Fabricating an integrated circuit with a resistance change memory device, comprises forming a second conducting layer on or above a first conducting layer of a compound structure, and structuring the second conducting layer |
| 02/04/2009 | CN100458974C Memory and memory access and method thereof |
| 01/29/2009 | WO2009013819A1 Semiconductor memory device |
| 01/29/2009 | DE102008034003A1 Nichtflüchtige Speicher mit Ketten von gestapelten resistiven Speicherzellen eines NAND-Typs und Verfahren zum Fertigen derselben Non-volatile memory with chains of stacked resistive memory cells of a NAND type and method of fabricating the same |
| 01/29/2009 | DE102008030859A1 Method of conditioning resistive memory cells of memory array, involves applying pulse to unreliable cell such that pulse shifts resistance respectively associated with unreliable cell to predetermined reliable resistance range |
| 01/29/2009 | DE102008030418A1 Quasi-Differenzielle Leseoperation Quasi-Differential read operation |
| 01/29/2009 | DE102008030217A1 Programmierverfahren mit lokal optimierten Schreibparametern Programming method with locally optimized write parameters |
| 01/29/2009 | DE102008029121A1 Schaltung zum Programmieren eines Speicherelements Circuitry for programming a memory element |
| 01/29/2009 | DE102008028935A1 Speicher mit driftkompensierter Leseoperation und zughöriges Verfahren Memory read operation and drift compensated zughöriges method |
| 01/29/2009 | DE102008027728A1 Integrierte Schaltung mit über Abstandshalter definierter Elektrode Integrated circuit with spacers defined electrode |
| 01/28/2009 | EP2018642A2 Low temperature deposition of phase change memory materials |
| 01/28/2009 | CN101354914A Molecular level memory unit for opening type double-layer nanometer carbon tube |
| 01/28/2009 | CN101354913A Molecular level memory unit for enclosed type double-layer nanometer carbon tube |
| 01/28/2009 | CN101354896A System for reading data stored on an optical information carrier |
| 01/28/2009 | CN100456512C Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the same |
| 01/27/2009 | US7483191 Holographic recording method, holographic memory reproduction method, holographic recording apparatus, and holographic memory reproduction apparatus |
| 01/27/2009 | US7481989 cutting fullerene nanotubes. In one embodiment, the present invention provides for preparation of homogeneous populations of short fullerene nanotubes by cutting and annealing (reclosing) the nanotube pieces followed by fractionation. The cutting and annealing processes may be carried out on a purified |
| 01/22/2009 | WO2009011221A1 A resistance change memory device and programming method thereof |
| 01/22/2009 | US20090021815 Method and apparatus for phase-encoded homogenized fourier transform holographic data storage and recovery |
| 01/22/2009 | DE102008033129A1 Integrierte Schaltung, Verfahren zum Betreiben einer integrierten Schaltung, sowie Speichermodul Integrated circuit A method of operating an integrated circuit, and memory module |
| 01/21/2009 | CN101351888A Electric element, memory device and semiconductor integrated circuit |
| 01/21/2009 | CN100454600C Non-volatile memory element and production method thereof and storage memory arrangement |
| 01/21/2009 | CN100454439C Non-volatile semiconductor memory device |
| 01/20/2009 | US7480167 Set programming methods and write driver circuits for a phase-change memory array |
| 01/15/2009 | US20090016094 Selection device for Re-Writable memory |
| 01/15/2009 | DE102008032058A1 Mehrpegel-Phasenänderungsspeicher und verwandte Verfahren Multi-level phase change memory device and related method |
| 01/15/2009 | DE102007032865A1 Integrated circuit for resistivity changing devices, has memory cell, which comprises two resistivity changing layers stacked one above other, in which each resistivity changing layer serves as separate data storage layer |
| 01/14/2009 | EP1554724B1 Storage medium |
| 01/14/2009 | CN101343371A Fluorinated cyclic olefin electret film |
| 01/14/2009 | CN100452243C Data storage device |
| 01/14/2009 | CN100451872C Angle-multiplexing hologram recording device, method, hologram reproduction device and method |
| 01/13/2009 | US7476596 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices |
| 01/08/2009 | WO2009005614A2 3d r/w cell with diode and resistive semiconductor element and method of making thereof |
| 01/07/2009 | CN100449647C Programming a phase-change material memory |
| 01/07/2009 | CN100449616C Data storage medium |
| 01/06/2009 | US7474782 Apparatus and method for processing holographic data reproduced from a holographic medium |
| 01/06/2009 | US7473982 Point contact array, not circuit, and electronic circuit comprising the same |
| 01/02/2009 | DE102008028934A1 Integrierte Schaltung mit Vertikaler Diode Integrated circuit with vertical diode |
| 01/02/2009 | DE102008026860A1 Speicher mit gemeinsam genutztem Speichermaterial Memory shared-memory material |
| 01/02/2009 | DE102005030140B4 Multi-Kontext-Speicherzelle Multi-context memory cell |
| 01/01/2009 | US20090004094 cutting fullerene nanotubes. In one embodiment, the present invention provides for preparation of homogeneous populations of short fullerene nanotubes by cutting and annealing the nanotube pieces followed by fractionation. The cutting and annealing processes may be carried out on a purified paper |
| 01/01/2009 | US20090003040 Method and System For Encoding to Eliminate Parasitics in Crossbar Array Memories |
| 01/01/2009 | US20090003039 Electromechanical Memory, Electric Circuit Using the Same, and Method of Driving Electromechanical Memory |
| 01/01/2009 | US20090001348 Semiconductor device |
| 12/31/2008 | WO2009002748A1 Two-terminal nanotube devices including a nanotube bridge and methods of making same |
| 12/31/2008 | WO2009002477A1 High forward current diodes for reverse write 3d cell and method of making thereof |
| 12/31/2008 | WO2009002475A1 Programming methods of a diode using forward bias |
| 12/31/2008 | WO2009001534A1 Resistance change type nonvolatile storage device |
| 12/31/2008 | CN100448049C Electric device comprising solid electrolyte |
| 12/30/2008 | US7471614 High density data storage medium |
| 12/30/2008 | US7471542 Information storage apparatus storing and reading information by irradiating a storage medium with electron beam |
| 12/24/2008 | WO2008157000A1 Delta sigma sense amplifier comprising digital filters and memory |
| 12/24/2008 | EP2005425A1 Holographic storage material |
| 12/24/2008 | DE102005011299B4 Programmierverfahren und Schreibtreiberschaltung für Phasenänderungsspeicherzellen Programming method and write driver circuit for phase change memory cells |
| 12/24/2008 | CN101331553A Non-volatile semiconductor memory device |
| 12/24/2008 | CN101330128A Organic non-volatile memory material and memory device |
| 12/24/2008 | CN100446183C Memory cell and method for producing a memory |
| 12/24/2008 | CN100446121C Semiconductor memory and its mfg. method |
| 12/18/2008 | WO2008153124A1 Semiconductor device and method for driving the same |
| 12/18/2008 | WO2008153100A1 Information recording/reproducing device |
| 12/18/2008 | WO2008153099A1 Information recording/reproducing device |
| 12/18/2008 | WO2008153005A1 Information recording/reproducing device |
| 12/18/2008 | US20080311025 Method for forming a patterned array of fullerene nanotubes |
| 12/17/2008 | EP2003651A1 Memory devices and methods of manufacturing the same |
| 12/17/2008 | EP2003649A2 Emulated combination memory device |
| 12/17/2008 | EP2002444A1 Nonvolatile rewriteable memory cell comprising a resistivity- switching oxide or nitride and an antifuse |
| 12/17/2008 | EP1606215B1 Nanoscopic structure and devices using the same |
| 12/17/2008 | CN101325244A Structures based on nanoparticles and method for their fabrication |
| 12/17/2008 | CN100444382C Planar polymer memory device |
| 12/16/2008 | US7466579 Field effect device with a channel with a switchable conductivity |
| 12/16/2008 | US7465956 Stacked organic memory devices and methods of operating and fabricating |
| 12/11/2008 | WO2008150693A1 Biasing a phase change memory device |
| 12/11/2008 | WO2008149493A1 Resistance change type memory |
| 12/11/2008 | WO2008149484A1 Nonvolatile storage element, its manufacturing method, and nonvolatile semiconductor device using the nonvolatile storage element |