Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or
Patents for G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663)
01/2013
01/02/2013CN102856492A Memory element, method of manufacturing the same, and memory device
01/02/2013CN102855929A Memory element, method of manufacturing the same, and memory device
01/02/2013CN102855928A Electric resistance transformation memory array and storage operation method therefor
01/02/2013CN101548333B Nonvolatile semiconductor storage device, and writing method, reading method and erasing method of the same
12/2012
12/27/2012WO2012178114A2 Resistance memory cell
12/27/2012WO2012177698A2 Drift management in a phase change memory and switch (pcms) memory device
12/27/2012WO2012176452A1 Semiconductor recording device
12/27/2012WO2012129083A9 Conditional programming of multibit memory cells
12/27/2012US20120329251 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
12/26/2012EP2537184A2 Memcapacitor devices, field effect transistor devices, non-volatile memory arrays, and methods of programming
12/26/2012EP2537156A2 Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems
12/26/2012CN102844813A Memory programming using variable data width
12/26/2012CN101779248B Storage device drive method
12/26/2012CN101542632B Resistance change type memory
12/20/2012WO2012172848A1 Nonvolatile semiconductor memory device including variable resistance element
12/20/2012WO2012172773A1 Method for driving resistance changing element, and nonvolatile storage device
12/20/2012WO2012171988A1 Memory cell with volatile and non-volatile storage
12/19/2012EP2534583A1 Method and system for a run-time reconfigurable computer architecture
12/19/2012CN102834872A Method of checking resistance change non-volatile memory device, and resistance change non-volatile memory device
12/19/2012CN102834868A Semiconductor memory device having a three-dimensional structure
12/19/2012CN102831930A Consumable chip, consumable container and data writing method for the consumable chip
12/18/2012US8335099 Optical memory device and method therefor
12/13/2012WO2012170615A1 Systems and methods for sharing memory between a plurality of processors
12/13/2012WO2012169198A1 Nonvolatile storage element, method of manufacturing thereof, initial breaking method, and nonvolatile storage device
12/13/2012WO2012168591A1 Logical memory architecture, in particular for mram, pcram, or rram
12/13/2012DE102012209151A1 Setzimpuls für Phasenübergangsspeicher-Programmierung Reset pulse for phase-change memory programming
12/12/2012EP2532037A1 Memory cell with parallel electrical paths
12/12/2012EP2532028A1 A memory cell that includes a sidewall collar for pillar isolation and methods of forming the same
12/12/2012CN102822901A Method for writing to variable-resistance type non-volatile element and storage device
12/12/2012CN102822900A Programming at least one multi-level phase change memory cell
12/12/2012CN102822898A Reference cell write operations in a memory
12/12/2012CN102822897A Multiple instruction streams memory system
12/12/2012CN102820054A Set pulse for phase change memory programming
12/11/2012US8331127 Nonvolatile memory device having a transistor connected in parallel with a resistance switching device
12/06/2012WO2012164926A1 Variable resistance nonvolatile storage device
12/06/2012WO2012162867A1 Resistive random access memory using electric field enhancement layer and method for manufacturing same
12/06/2012DE102012104900A1 Verfahren und Vorrichtung zur schichtweisen Erzeugung dünner Volumengitterstapel und Strahlvereiniger für ein holografisches Display Method and apparatus for producing thin layered volume grating stack and beam for a holographic display
12/05/2012CN1487529B Phase change material storage equipment, refreshing method thereof and system comprising the equipment
12/05/2012CN102812517A Multi-port non-volatile memory that includes a resistive memory element
12/04/2012US8325536 Current sink system for source-side sensing
11/2012
11/29/2012WO2012160863A1 Semiconductor memory device
11/29/2012WO2012160821A1 Variable-resistance type non-volatile storage device and method for driving variable-resistance type non-volatile storage device
11/29/2012DE102011076535A1 Device for storing power supply information of e.g. TV, supplies electrical charge carriers to nanoparticles selectively in regions in specific operating state
11/28/2012EP2527853A2 Multifunctional nanoscopy for imaging cells
11/28/2012EP2527852A2 Multifunctional nanoscopy for imaging cells
11/28/2012CN102804278A Forming method for variable resistance non-volatile memory element and variable resistance non-volatile memory device
11/28/2012CN102804277A Programming Reversible Resistance Switching Elements
11/28/2012CN102800806A Bipolar multistage plane resistance random access memory, conducting substrate thereof, and preparation method thereof
11/27/2012US8320154 Switching element and application of the same
11/22/2012WO2012128884A3 Single transistor driver for address lines in a phase change memory and switch (pcms) array
11/22/2012WO2012123348A3 Magneto-electronic component, and method for the production thereof
11/22/2012US20120294075 Phase-change memory device
11/21/2012CN102790073A Variable resistance nonvolatile memory device and memory cell formation method
11/21/2012CN101868855B Memory cell
11/21/2012CN101866941B Resistance change memory device and operation method of the same
11/20/2012US8315080 Luminescence device and method of manufacturing the same
11/20/2012US8313940 Self-addressable self-assembling microelectronic systems and devices for molecular biological analysis and diagnostics
11/15/2012WO2012153488A1 Cross-point variable-resistance nonvolatile storage device and method of reading therefrom
11/14/2012CN102782846A Non-volatile memory element and non-volatile memory device equipped with same
11/14/2012CN102779827A Isolation device free memory
11/08/2012DE10297786B4 Programmierung eines Phasenübergangsmaterialspeichers Programming a phase change material storage
11/07/2012CN202523771U Resistive random access memory based on bismuth oxide film
11/07/2012CN102768854A Magnetoelectric composite multi-state memory unit and preparation method thereof
11/07/2012CN101568971B Nonvolatile memory element, nonvolatile semiconductor storage device, and method for reading and writing thereof
11/01/2012WO2012149569A1 Self-body biasing sensing circuit for resistance-based memories
11/01/2012WO2012148852A1 Non-volatile storage system with dual block programming
11/01/2012WO2012147315A1 Resistive non-volatile storage device and drive method for same
11/01/2012WO2012098184A4 Programmable volatile/non-volatile memory cell
10/2012
10/31/2012DE112011100217T5 Programmierung mindestens einer mehrstufen-phasenwechsel-speicherzelle Programming at least one multi-level phase change memory cell
10/26/2012WO2012128938A3 Method and apparatus to reset a phase change memory and switch (pcms) memory cell
10/24/2012EP2513903A1 3d memory device with page register not like sense amplifier circuits and sense amplifier interface underneath memory array
10/24/2012CN102754166A Programming phase change memories using ovonic threshold switches
10/24/2012CN102754160A 3d memory device with page register not like sense amplifier circuits and sense amplifier interface underneath memory array
10/24/2012CN102751437A Electric-activation-free resistive random access memory and preparation method thereof
10/24/2012CN102751436A Vertical selection pipe, storage unit, three-dimensional memory array and operation method thereof
10/24/2012CN102750980A Phase change memory chip with configuration circuit
10/23/2012US8295123 Current rectifying element, memory device incorporating current rectifying element, and fabrication method thereof
10/18/2012WO2012140971A1 Perovskite-type manganese oxide thin film
10/18/2012WO2012140903A1 Reference cell circuit and resistance change nonvolatile memory device using same
10/17/2012CN102742011A Nonvolatile storage element and method for manufacturing same
10/17/2012CN102741935A Phase change memory programming method and phase change memory
10/17/2012CN102738391A Resistance random access memory with adjustable dielectric layer magnetic property
10/17/2012CN102737714A Optical elements and information storage devices including the same
10/17/2012CN102737713A Two-dimensional integrated optical fiber online storage based on linear array multi-core optical fiber
10/17/2012CN102737712A Material-consumption chip, data reading-writing method of material-consumption chip, and material consumption container
10/11/2012US20120256157 Semiconductor device
10/10/2012EP2509076A1 Electronic device such as a selector
10/10/2012CN102723111A Method for building multi-bits memory device by using chemical means
10/04/2012WO2012132341A1 Method for writing to variable-resistance type non-volatile element and storage device
10/04/2012US20120251786 Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
10/04/2012US20120250390 Memory cell and memory device including the same
10/03/2012EP2506266A1 Phase change memory (PCM) architecture and a method for writing into PCM architecture
10/03/2012CN1992369B Semiconductor device and manufacturing method thereof
10/03/2012CN102714056A Resetting phase change memory bits
10/03/2012CN102709470A Nano-multilayer film, field effect tube, sensor, random access memory and preparation method
10/03/2012CN102708920A Reading phase change memories
10/03/2012CN102708912A Page buffer architecture for programming, erasing and reading nanoscale resistive memory devices
10/02/2012US8277927 Electret and electrostatic induction conversion device
09/2012
09/27/2012WO2012129083A1 Conditional programming of multibit memory cells
09/27/2012WO2012128938A2 Method and apparatus to reset a phase change memory and switch (pcms) memory cell
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