Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or
Patents for G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663)
09/2012
09/27/2012WO2012128884A2 Single transistor driver for address lines in a phase change memory and switch (pcms) array
09/27/2012WO2012128134A1 Semiconductor memory device
09/27/2012WO2012128017A1 Resistive memory device and method for writing to same
09/27/2012WO2012127718A1 Resistance-change memory
09/26/2012CN102694122A Two terminal re-writeable non-volatile ion transport memory device
09/20/2012WO2012124314A1 Non-volatile storage element drive method and non-volatile storage device
09/20/2012WO2012123973A1 Devices and methods to program a memory cell
09/20/2012US20120238466 Multiplexed Assay Using Encoded Solid Support Matrices
09/20/2012US20120236622 Non-volatile graphene-drum memory chip
09/19/2012CN102682837A Semiconductor device
09/19/2012CN101836296B Variable resistance nonvolatile memory device and memory cell formation method
09/18/2012US8270198 Nonvolatile optical memory element, memory device, and reading method thereof
09/18/2012US8269207 Memory device having variable resistance memory cells disposed at crosspoint of wirings
09/13/2012WO2012120401A1 Cell-state determination in phase-change memory
09/12/2012EP2498291A1 Resistive memory element and related control method
09/12/2012CN102668085A Resistive switching in nitrogen-doped mgo
09/12/2012CN102667947A Forming method of performing forming on variable resistance nonvolatile memory element, and variable resistance nonvolatile memory device
09/12/2012CN102667946A Phase change memory element
09/12/2012CN102664235A Small-electrode-structure resistance random access memory and preparation method of small-electrode-structure resistance random access memory
09/11/2012US8263958 Layered resistance variable memory device and method of fabrication
09/07/2012WO2012118791A1 Methods for increasing bottom electrode performance in carbon- based memory devices, using titanium - rich titanium nitride
09/07/2012WO2012118618A1 Three dimensional memory system with column pipeline
09/07/2012WO2012117467A1 Reconfigurable circuit
09/06/2012DE112010003853T5 VViderstandsschalten in Stickstoffdotiertem MgO VViderstandsschalten in nitrogen doped MgO
09/05/2012EP2495729A2 Memory element and memory device
09/05/2012EP2494556A2 Double-pulse write for phase change memory
09/05/2012CN102656641A Energy-efficient set write of phase change memory with switch
09/05/2012CN101882628B Rectifying device for cross array structure memory
09/05/2012CN101562049B Nanotube-based switching elements with multiple controls and circuits made thereof
08/2012
08/30/2012WO2012113365A1 Method for nondestructively reading resistive memory elements
08/23/2012WO2012038874A3 Memory diodes
08/22/2012EP2490223A2 Storage apparatus and operation method for operating the same
08/22/2012EP2099071B1 Resistance change device and process for producing the same
08/22/2012CN101911296B Phase-change memory element, phase-change memory cell, vacuum treatment device, and method for manufacturing phase-change memory element
08/22/2012CN101292350B Semiconductor device and manufacturing method thereof
08/16/2012WO2012108185A1 Non-volatile storage element drive method and initialization method and non-volatile storage device
08/16/2012US20120206955 Memory module having high data processing rate
08/15/2012CN102640287A Resistance-changing non-volatile storage device
08/15/2012CN102637454A Storage apparatus and operation method for operating the same
08/15/2012CN101167137B 三维纳米级交叉杆 Three-dimensional stage cross bar
08/09/2012WO2012105232A1 Data read method of non-volatile recording element and non-volatile recording device
08/09/2012WO2012105164A1 Non-volatile semiconductor memory device
08/08/2012EP2263257B1 Method of forming a memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element
08/08/2012CN102629489A Storage element and memory device
08/08/2012CN102629488A Semiconductor device
08/08/2012CN102629486A Memory unit and method of operating the same
08/02/2012WO2012102734A1 Methods, systems and apparatus for resistive memory
08/02/2012WO2012102025A1 Nonvolatile memory device
08/02/2012US20120193602 Nanoscopic wire-based devices and arrays
08/01/2012EP2481084A2 Memory devices with enhanced isolation of memory cells, systems including same and methods of forming same
08/01/2012EP1446832B1 Electrode structure for use in an integrated circuit
08/01/2012CN102623638A Resistance random access memory and preparation method thereof
08/01/2012CN102623636A Resistance-type random access memory based on bismuth oxide film and production method of resistance-type random access memory
08/01/2012CN102017145B Nonvolatile memory element and nonvolatile memory device
07/2012
07/31/2012US8233313 Conductive organic non-volatile memory device with nanocrystals embedded in an amorphous barrier layer
07/26/2012WO2012098197A1 Compact volatile/non-volatile memory cell
07/26/2012WO2012098195A1 Loadless volatile/non-volatile memory cell
07/26/2012WO2012098184A1 Programmable volatile/non-volatile memory cell
07/26/2012WO2012098182A1 Combined volatile and non-volatile memory cell
07/26/2012WO2012098181A1 Volatile/non-volatile memory cell
07/26/2012WO2012068127A3 Transistor driven 3d memory
07/25/2012CN102612716A Nonvolatile memory device
07/25/2012CN102610755A Ultra-low-power organic resistance changing memory device and manufacturing method thereof
07/25/2012CN102610275A Cadmium selenide nanowire-based Schottky junction type multi-byte nonvolatile memory and preparation method thereof
07/25/2012CN101529523B Crossbar-memory systems with nanowire crossbar junctions
07/25/2012CN101375342B Tunneling-resistor-junction-based microscale/nanoscale demultiplexer arrays
07/24/2012US8228724 Semiconductor device
07/19/2012WO2012095811A1 Charge storage organic memory system
07/19/2012US20120181621 Field effect devices controlled via a nanotube switching element
07/19/2012DE112005002818B4 Diodenarrayarchitektur zum Adressieren von Widerstandspeicherarrays im Nanomaßstab Diode array architecture for addressing resistance memory arrays at the nanoscale
07/18/2012CN102598143A Double-pulse write for phase change memory
07/18/2012CN102598139A Non-volatile memory cell with non-ohmic selection layer
07/18/2012CN102593359A Multifunction-integrated organic resistive random access memory and manufacturing method thereof
07/18/2012CN102593351A Low-power-consumption resistive random access memory structure and manufacturing method thereof
07/18/2012CN102592666A Nonvolatile memory cell comprising a diode and a resistance-switching material
07/18/2012CN101331553B 非易失性半导体存储器件 The nonvolatile semiconductor memory device
07/12/2012WO2012069719A3 Electronic memory
07/12/2012WO2012067871A3 Pipeline architecture for scalable performance on memory
07/11/2012EP2474980A2 Thermo programmable resistor based ROM
07/11/2012EP1872370B1 Multiplexer interface to a nanoscale-crossbar
07/11/2012CN102569649A Semiconductor device having resistive device
07/11/2012CN102569335A Memory element and method of manufacturing the same, and memory device
07/11/2012CN102568565A 存储装置 Storage device
07/11/2012CN102560589A Method for preparing Ge-Sb-Te ternary phase-change material film
07/11/2012CN101548336B Resistance change type nonvolatile storage device
07/11/2012CN101548335B Nonvolatile storage device
07/11/2012CN101401106B Method of reducing electro-static discharge (esd) from conductors on insulators
07/10/2012US8219327 Multiplexed assay using encoded solid support matrices
07/10/2012US8218351 Non-volatile electrochemical memory device
07/05/2012WO2012090404A1 Nonvolatile storage element and method for manufacturing same
07/04/2012CN102544365A Resistance random access memory and manufacturing method thereof
07/04/2012CN102544364A Memory element and memory device
07/04/2012CN102543174A Semiconductor memory device and driving method of semiconductor memory device
07/04/2012CN102543173A MEMS (Micro Electro Mechanical System) static storage and MEMS programmable device
07/04/2012CN101615623B Memory device
07/04/2012CN101064359B Non-volatile memory devices including variable resistance material
07/03/2012US8213217 Microelectronic programmable device and methods of forming and programming the same
06/2012
06/28/2012WO2012085627A1 Method for operating a transistor, reconfigurable processing architecture and use of a restored broken down transistor for a multiple mode operation
06/28/2012WO2012058324A3 Resistance change memory cell circuits and methods
06/27/2012EP2469541A1 Variable resistance device, semiconductor device including the variable resistance device, and method of operating the semiconductor device
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