Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or
Patents for G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663)
06/2012
06/27/2012CN102522501A Resistance random access memory with cross array structure and preparation method
06/27/2012CN102522499A Magnetic memory, electronic system, memory and providing method thereof
06/27/2012CN102522116A Programmable resistance memory device
06/27/2012CN101676931B Semiconductor device and method for preventing counterfeiting object
06/26/2012US8208734 Method for acquiring reserved block in holographic storage system
06/26/2012US8207519 Ionic-modulated dopant profile control in nanoscale switching devices
06/21/2012WO2012082775A1 Non-volatile memory having 3d array of read/write elements with vertical bit lines and select devices and methods thereof
06/21/2012WO2012082770A1 Non-volatile memory having 3d array of read/write elements with low current structures and methods thereof
06/21/2012WO2012082654A2 Architecture for three dimesional non-volatile storage with vertical bit lines
06/20/2012EP2466586A1 Multibit magnetic random access memory cell with improved read margin
06/20/2012EP2465116A1 Semiconductor memory with improved memory block switching
06/20/2012CN102511079A Changing resistance-type nonvolatile memory device
06/20/2012CN101779306B Memory device
06/20/2012CN101553924B Nonvolatile semiconductor storage device
06/14/2012DE112010001914T5 Einheit und Methode zumn Schalten einer Einheit Unit and method zumn switching a unit
06/13/2012EP1560704B1 Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
06/13/2012CN101615426B A programmable conductor random access memory and a method for writing thereto
06/06/2012CN102487124A Nanometer multilayer film, field-effect tube, sensor, random access memory and preparation method
06/06/2012CN101679591B Radiation-crosslinking and thermally crosslinking PU systems based on isocyanate-reactive block copolymers
05/2012
05/31/2012WO2012070236A1 Resistance-changing non-volatile storage device
05/31/2012WO2012069719A2 Electronic memory
05/30/2012EP1488452B1 A method for making nanoscale wires and gaps for switches and transistors
05/30/2012EP1409156B1 Method of fabricating conductive nanotube articles
05/30/2012CN102484119A 带有具有倒圆拐角的多个支柱的交叉点非易失性存储器件及其制造方法 Intersection point with the rounded corners of a plurality of struts non-volatile memory device and manufacturing method with
05/30/2012CN102483950A Thermally Shielded Resistive Memory Element For Low Programming Current
05/30/2012CN102483948A 具有改进型存储器块切换的半导体存储器 Improved memory block having a semiconductor memory switch
05/30/2012CN101101964B Non-volatile memory device including a variable resistance material
05/30/2012CN101073125B Semiconductor devices
05/30/2012CN101030622B Nonvolatile memory device and nonvolatile memory array including the same
05/24/2012WO2012068127A2 Transistor driven 3d memory
05/24/2012WO2012067871A2 Pipeline architecture for scalable performance on memory
05/24/2012WO2012067738A1 Memory system with reversible resistivity-switching using pulses of alternate polarity
05/24/2012WO2012067737A1 Memory system with reversible resistivity- switching using pulses of alternate polarity
05/23/2012EP2455942A2 Memory write error correction circuit
05/23/2012EP1576042B1 Optical information carrier comprising immobilized proteorhodopsin
05/23/2012CN1983619B Data read/write device
05/23/2012CN1914688B Molecular memory devices and method for reading or writing, memory unit, memory array and device
05/23/2012CN102473707A 非易失性存储单元、非易失性存储单元阵列、以及其制造方法 A nonvolatile memory unit, a nonvolatile memory cell array, and a manufacturing method thereof
05/23/2012CN102473458A Cross-point variable-resistance nonvolatile storage device
05/23/2012CN102473457A Non-volatile memory device and drive method therefor
05/23/2012CN102473456A 非易失性存储器的层级式交点阵列 Hierarchical intersection of the nonvolatile memory array
05/23/2012CN102473455A 具有活性离子界面区的非易失性存储器 With non-volatile memory reactive ion interfacial region
05/23/2012CN102473454A PCMO non-volatile resitive memory with improved switching
05/23/2012CN102473448A 具有电阻性感测元件块擦除和单向写入的非易失性存储器阵列 Has a resistive sensing element unidirectional block erase and write nonvolatile memory array
05/16/2012EP2263273B1 Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same
05/16/2012CN102460586A 半导体器件 Semiconductor devices
05/16/2012CN102460585A 对具有二极管的交叉点非易失性存储器单元的写入方法 The method of writing diode having crosspoint nonvolatile memory cells
05/16/2012CN102456834A Nonvolatile memory device and manufacturing method thereof
05/16/2012CN102456399A 量子存储装置 Quantum storage device
05/15/2012US8180950 Apparatus and method to manage information using an optical and holographic data storage medium
05/15/2012US8178907 Nanoscopic wire-based electrical crossbar memory-devices and arrays
05/10/2012WO2012061664A1 Integrated circuit chip customization using backside access
05/09/2012EP2449591A1 Cross point non-volatile memory devices with a plurality of pillars having rounded corners and method of manufacturing
05/09/2012CN102449703A Switchable electronic device and method of switching said device
05/09/2012CN102449702A Memory element, stacking, memory matrix and method for operation
05/09/2012CN102449701A Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
05/09/2012CN102449699A Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
05/09/2012CN102449698A Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture
05/09/2012CN102446548A Nonvolatile semiconductor memory device
05/08/2012US8174861 Memory module having high data processing rate
05/03/2012WO2012058324A2 Resistance change memory cell circuits and methods
05/03/2012WO2012056689A1 Nonvolatile memory device
05/03/2012DE102011083180A1 Auslesungsverteilungsverwaltung für Phasenwechselspeicher Auslesungsverteilungsverwaltung for phase change memory
05/02/2012CN102439666A Programming non-volatile storage element using current from other element
05/02/2012CN102439665A Writing a multibit resistance-switching memory cell including a dummy resistance, resistance switching elements and diodes
05/02/2012CN102439662A Optical memory device and method of recording/reproducing information by using the same
05/02/2012CN102437115A Graded metal oxide resistance based semiconductor memory device
05/02/2012CN101542729B Variable resistance element, nonvolatile switching element, and variable resistance memory device
04/2012
04/26/2012WO2012024079A3 Variable resistance memory array architecture
04/26/2012US20120099365 Three dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array
04/26/2012US20120097912 Semiconductor device
04/25/2012EP2444972A1 Semiconductor device
04/25/2012EP2443657A1 Memristors based on mixed-metal-valence compounds
04/25/2012EP2443630A2 Programming reversible resistance switching elements
04/25/2012EP1715530B1 Molecular device
04/25/2012CN1890752B 电阻存储器的ac感测 Measuring ac sense resistor memory
04/24/2012US8164130 Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same
04/19/2012WO2012051053A1 Non-volatile graphene-drum memory chip
04/19/2012WO2012051041A1 Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
04/19/2012WO2012049789A1 Non-volatile semiconductor memory device
04/19/2012WO2012049721A1 Semiconductor storage device
04/19/2012WO2011159705A3 Write and erase scheme for resistive memory device
04/19/2012US20120091429 Resistive memory
04/18/2012CN102422361A Non-volatile storage device and method for writing to non-volatile storage device
04/18/2012CN101273456B 形状记忆装置 Shape memory device
04/11/2012CN102414819A 电阻变化型非易失性存储装置以及存储器单元的形成方法 The method of forming a resistance variable nonvolatile memory device and a memory unit
04/11/2012CN102412368A 基于聚合物/金属离子复合体系的阻变存储器及制备方法 Resistive polymer / metal ion complex system of storage and preparation method based on
04/11/2012CN102411986A Optical temporary register
04/11/2012CN102411985A 一种光纤双环可擦除光信息存储装置及存储方法 An optical fiber bicyclic erasable optical information storage apparatus and storage methods
04/10/2012US8153470 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
04/05/2012WO2012044640A1 Resistance-based memory having two-diode access device
04/05/2012WO2012043502A1 Semiconductor device
04/05/2012WO2012042866A1 Method of forming resistance change non-volatile memory element
04/05/2012WO2012042828A1 Memory element, semiconductor storage device, method of manufacturing memory element, and method of reading from semiconductor storage device
04/05/2012DE102006038899B4 Festkörperelektrolyt-Speicherzelle sowie Festkörperelektrolyt-Speicherzellenarray Solid electrolyte memory cell and solid electrolyte memory cell array
04/05/2012DE102004043264B4 Magnet-Speichervorrichtungen mit wahlfreiem Zugriff, die wärmeerzeugende Schichten enthalten und darauf bezogene Verfahren zum Programmieren Magnetic random access memory devices which contain heat-generating layers and related method for programming
04/04/2012EP2436011A2 Memory element, stacking, memory matrix and method for operation
04/04/2012CN102405499A 具有数据线切换方案的存储器系统 Has a data line switching scheme memory system
04/04/2012CN101375344B 混合尺度电子接口 Mixed-scale electronic interface
03/2012
03/29/2012WO2012040680A1 Method, apparatus and system to determine access information for a phase change memory
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