Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or
Patents for G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663)
02/2011
02/03/2011DE102010018762A1 Speichervorrichtung Memory device
02/02/2011EP2279511A1 Memory with tunnel barrier and method for reading and writing information from and to this memory
02/02/2011CN101965616A Method and apparatus for accessing a multi-mode programmable resistance memory
02/01/2011US7879446 Fluorinated cyclic olefin electret film
01/2011
01/27/2011US20110019462 Three dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array
01/27/2011DE112004000060B4 Schaltelemente Switching elements
01/26/2011EP2278620A1 Integrated circuit, memory cell, memory module, and method of manufacturing an integrated circuit
01/26/2011EP2277176A1 Apparatus, method and system for reconfigurable circuitry
01/26/2011EP2277175A2 Apparatus and method for producing switchable temporary magnetism in oxidic materials by means of electrical fields
01/26/2011EP2277174A2 Memory devices, memory device constructions, constructions, memory device forming methods, current conducting devices, and memory cell programming methods
01/26/2011CN1996491B Nonvolatile carbon nanotube memory device using multiwall carbon nanotubes and methods of operating the same
01/26/2011CN1542848B Memory cell, memory device and manufacturing method of memory cell
01/26/2011CN101587746B Semiconductor device
01/25/2011US7875883 Electric device using solid electrolyte
01/20/2011WO2011008654A1 Non-volatile memory cell with non-ohmic selection layer
01/20/2011WO2011008653A1 Non-volatile memory with active ionic interface region
01/20/2011WO2011008652A1 Hierarchical cross-point array of non-volatile memory
01/20/2011WO2011008651A1 Pcmo non-volatile resitive memory with improved switching
01/20/2011WO2011008385A1 Cross point non-volatile memory devices with a plurality of pillars having rounded corners and method of manufacturing
01/20/2011WO2010134697A3 Optical memory device and method of recording/reproducing information by using the same
01/20/2011US20110012438 Electret and electrostatic induction conversion device
01/19/2011CN101952954A Semiconductor device, semiconductor device manufacturing method, semiconductor chip and system
01/19/2011CN101952893A Method for driving resistance change element and resistance change type memory using same
01/18/2011USRE42040 Switching element method of driving switching element rewritable logic integrated circuit and memory
01/18/2011US7872941 Nonvolatile memory device and method of operating the same
01/13/2011WO2011005809A1 Non-volatile memory array with resistive sense element block erase and uni-directional write
01/13/2011WO2011004448A1 Semiconductor storage device and method for manufacturing same
01/13/2011WO2010117911A3 Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
01/13/2011US20110007554 Semiconductor device
01/13/2011DE102006058181B4 Phasenwechselspeicherbauelement und Verfahren zum Lesen von Daten in einem Phasenwechselspeicherbauelement Phase change memory device and method for reading data in a phase change memory device
01/12/2011EP1965391B1 Non-volatile semiconductor memory device
01/12/2011CN1726562B CMIS semiconductor nonvolatile storage circuit
01/12/2011CN101946285A Nonvolatile storage device and method for writing into the same
01/12/2011CN101501849B Storage element, memory device and semiconductor integrated circuit
01/11/2011US7869249 Complementary bit PCRAM sense amplifier and method of operation
01/04/2011US7864613 Thermal code transmission circuit and semiconductor memory device using the same
01/04/2011US7864560 Nano-electronic array
01/04/2011CA2377671C High density non-volatile memory device
12/2010
12/29/2010CN101933096A Nonvolatile storage device and method for writing into memory cell of the same
12/29/2010CN101237025B Nonvolatile memory devices and methods of fabricating the same
12/28/2010US7858034 an layout of cells comprising transistors, connected to a power source
12/23/2010WO2010147809A2 Programming reversible resistance switching elements
12/23/2010WO2010147029A1 Semiconductor device
12/23/2010US20100325513 Integrated control electronics (ice) for a holographic storage system
12/22/2010EP2263273A2 Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same
12/22/2010EP2263257A1 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same
12/22/2010EP2263256A1 A memory cell that includes a carbon-based memory element and methods of forming the same
12/22/2010EP1994489B1 Method of reducing electro-static discharge (esd) from conductors on insulators
12/22/2010CN101496173B Nonvolatile semiconductor storage device and method for manufacturing same
12/16/2010WO2010143414A1 Method of writing for resistance-change non-volatile memory element, and resistance-change non-volatile memory device
12/16/2010WO2010143396A1 Forming method for resistance-change non-volatile memory element, and resistance-change non-volatile memory device
12/15/2010EP2260492A2 Phase change memory
12/15/2010CN1624803B 半导体集成电路装置 The semiconductor integrated circuit device
12/09/2010WO2010140296A1 Nonvolatile memory element and semiconductor memory device provided with the same
12/09/2010WO2010139925A1 Switchable electronic device and method of switching said device
12/09/2010DE102010018766A1 Speichervorrichtung und Programmiersystem Memory device and programming system
12/09/2010DE102010016922A1 Phasenänderungsspeicher-Sicherheitsanordnung Phase change memory safety assembly
12/08/2010EP2259267A1 Method for manufacturing a resistive switching memory cell comprising a nickel oxide layer operable at low-power and memory cells obtained thereof
12/08/2010EP2257980A1 MEMORY CELLS, METHODS OF FORMING MEMORY CELLS, AND METHODS OF FORMING PROGRAMMED MEMORY CELLS& xA;
12/08/2010CN101911296A Phase-change memory element, phase-change memory cell, vacuum treatment device, and method for manufacturing phase-change memory element
12/08/2010CN101911206A Large capacity one-time programmable memory cell using metal oxides
12/08/2010CN101911205A Nonvolatile semiconductor memory device
12/08/2010CN101911204A Memory cell, and memory device
12/08/2010CN101106171B Non-volatile memory device including variable resistance material
12/07/2010US7847330 Four vertically stacked memory layers in a non-volatile re-writeable memory device
12/02/2010WO2010136056A1 Resistive storage cell, crossbar array circuit, resistive random access memory device and read-out-method
12/02/2010WO2010136007A2 Memory element, stacking, memory matrix and method for operation
12/01/2010EP2256747A1 Non-volatile memory cell comprising a diode and a resistance-switching material
12/01/2010EP2256746A1 Non-volatile memory cell comprising a diode and a resistance-switching material
12/01/2010EP2256745A1 Non-volatile memory cell comprising a diode and a resistance-switching material
12/01/2010EP2256744A1 Non-volatile memory cell comprising a diode and a resistance-switching material
12/01/2010CN1892889B Phase-changeable memory device and method of programming the same
12/01/2010CN1866570B Memory device and semiconductor device, method for driving memory device
11/2010
11/25/2010WO2010134697A2 Optical memory device and method of recording/reproducing information by using the same
11/24/2010CN101896977A Semiconductor memory device and memory cell voltage application method
11/23/2010US7839176 Methods of making nanotube-based switching elements and logic circuits
11/23/2010US7838862 Phase random access memory with high density
11/18/2010WO2010131477A1 Nonvolatile memory device and method for writing data to nonvolatile memory device
11/18/2010US20100293518 Nanoscale interconnection interface
11/18/2010US20100290264 Optoelectronic memory devices
11/17/2010CN101889312A Storage device and information re-recording method
11/17/2010CN101889311A Storage device and information rerecording method
11/17/2010CN101887935A Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
11/17/2010CN101501851B Resistance variable element and resistance variable storage device
11/17/2010CN101133503B Method for manufacturing an electrolyte material layer in semiconductor memory devices
11/16/2010US7834337 Memory device
11/11/2010US20100283528 Nanotube-on-gate fet structures and applications
11/11/2010DE102004025975B4 Phasenänderungsspeicherbauelement und Programmierverfahren Phase change memory device and programming method
11/10/2010EP2249348A2 Stacked memory devices
11/10/2010CN101882628A Rectifying device for cross array structure memory
11/10/2010CN101882621A Carbon nanotube network storage and preparation method thereof
11/10/2010CN101097776B Nonvolatile memory cell and memory system
11/09/2010US7831882 Memory system with error detection and retry modes of operation
11/09/2010US7831762 Reducing the format time for bit alterable memories
11/09/2010US7830702 Synthetic molecular spring device
11/09/2010US7830695 Capacitive arrangement for qubit operations
11/09/2010US7829883 Vertical carbon nanotube field effect transistors and arrays
11/04/2010WO2010125852A1 Semiconductor device
11/04/2010WO2010125805A1 Method for writing to resistance-change non-volatile memory elements, and resistance-change non-volatile memory device
11/04/2010WO2010125780A1 Nonvolatile storage element and nonvolatile storage device
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