| Patents for G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663) |
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| 08/18/2011 | WO2011097687A1 Image matching, data compression and tracking architectures |
| 08/17/2011 | EP2357653A2 Stacked memory device and method thereof |
| 08/17/2011 | CN102157691A Molecular memory and processing systems and methods therefor |
| 08/17/2011 | CN101371313B Nonvolatile semiconductor memory device |
| 08/16/2011 | US8000129 Field-emitter-based memory array with phase-change storage devices |
| 08/11/2011 | WO2011097389A1 Non-volatile memory cell containing nanodots and method of making thereof |
| 08/11/2011 | WO2011097077A1 A memory cell that includes a sidewall collar for pillar isolation and methods of forming the same |
| 08/11/2011 | WO2011096194A1 Method of driving resistance changing element, method of initialization of same, and nonvolatile memory device |
| 08/11/2011 | WO2011095902A1 Phase change memory programming method and phase change memory |
| 08/11/2011 | US20110194339 Microelectronic programmable device and methods of forming and programming the same |
| 08/10/2011 | EP2355157A1 Semiconductor devices including variable-resistance materials and methods of operating the same |
| 08/10/2011 | EP2355105A1 Phase change memory programming method and phase change memory |
| 08/10/2011 | EP2353166A1 Memory reading method taking care of resistance drift effects |
| 08/10/2011 | EP1493194B1 Molecular electronic device using metal-metal bonded complexes |
| 08/10/2011 | CN1574363B Nonvolatile memory device comprising a switching device and a resistant material and method of manufacturing the same |
| 08/10/2011 | CN102148229A Memory element, and semiconductor device |
| 08/04/2011 | WO2011091709A1 Ferro-resistive random access memory (ferro-rram), operation method and manufacturing mehtod thereof |
| 08/04/2011 | WO2011066034A3 Resetting phase change memory bits |
| 08/04/2011 | US20110186803 Multi-resistive state memory device with conductive oxide electrodes |
| 08/04/2011 | DE102010061530A1 Speicher mit variablem Widerstand, Betriebsverfahren und System Storage of variable resistance, operating method and system |
| 08/03/2011 | EP1979911B1 Tunneling-resistor-junction-based microscale/nanoscale demultiplexer arrays |
| 08/03/2011 | CN102144309A Carbon-based resistivity-switching materials and methods of forming the same |
| 08/03/2011 | CN102142443A Semiconductor device, and method of fabricating same |
| 08/02/2011 | US7990751 Drive method of nanogap switching element and storage apparatus equipped with nanogap switching element |
| 08/02/2011 | US7989789 Phase-change memory device that stores information in a non-volatile manner by changing states of a memory material |
| 07/28/2011 | US20110185245 Method for detecting and correcting errors for a memory whose structure shows dissymmetrical behavior, corresponding memory and its use |
| 07/28/2011 | DE102004045219B4 Anordnung und Verfahren zum Auslesen von Widerstandsspeicherzellen Arrangement and method for reading the resistive memory cells |
| 07/27/2011 | EP2348555A1 Metal oxide thin film and method for manufacturing the same |
| 07/27/2011 | EP2348460A1 Organic anti fuse memory |
| 07/27/2011 | EP1875476B1 Three-dimensional nanoscale crossbars |
| 07/27/2011 | CN1953230B Nonvolatile memory device comprising nanodot and manufacturing method for the same |
| 07/27/2011 | CN102138180A Electronic device for a reconfigurable logic circuit |
| 07/26/2011 | US7985906 Nanotube-based switching elements and logic circuits |
| 07/21/2011 | US20110174619 Nonoscopic wired-based devices and arrays |
| 07/20/2011 | EP2345071A1 Graphene memory cell and fabrication methods thereof |
| 07/20/2011 | EP1540657B1 Software refreshed memory device and method |
| 07/20/2011 | EP1230340B1 Methods for the electronic, homogeneous assembly and fabrication of devices |
| 07/20/2011 | CN101625874B Multi-gray scale holographic storage method |
| 07/14/2011 | WO2011084266A2 Programming phase change memories using ovonic threshold switches |
| 07/14/2011 | DE102010061572A1 Phasenänderungsstruktur, Verfahren zum Bilden einer Phasenänderungsschicht, Phasenänderungs-Speichervorrichtung und Verfahren zum Herstellen einer Phasenänderungs-Speichervorrichtung Phase change structure, method of forming a phase change layer, phase-change memory device and method for fabricating a phase change memory device |
| 07/13/2011 | EP2343709A2 Nanotube films and articles |
| 07/13/2011 | EP2342750A2 Silicon-based nanoscale resistive device with adjustable resistance |
| 07/13/2011 | EP2342717A1 Set and reset detection circuits for reversible resistance switching memory material |
| 07/13/2011 | EP2342713A1 Continuous programming of resistive memory using staggered precharge |
| 07/12/2011 | CA2389314C Methods and apparatus for the electronic, homogeneous assembly and fabrication of devices |
| 07/12/2011 | CA2328593C Chemically assembled nano-scale devices |
| 07/07/2011 | WO2011080784A1 Methods for a phase-change memory array |
| 07/07/2011 | WO2011059576A3 Double-pulse write for phase change memory |
| 07/06/2011 | CN1812096B Cross-point nonvolatile memory devices and methods of fabricating the same |
| 07/06/2011 | CN102119424A Resistance-change non-volatile memory device |
| 07/06/2011 | CN101572248B Resistance memory and method for fabricating integrated circuit with same |
| 07/05/2011 | US7974123 Method using a synthetic molecular spring device in a system for dynamically controlling a system property and a corresponding system thereof |
| 06/30/2011 | US20110159661 Nonvolatile Memory Element and Production Method Thereof and Storage Memory Arrangement |
| 06/29/2011 | EP2339584A2 Memory devices and methods of operating the same |
| 06/29/2011 | EP2132750B1 Rectifying element for a crosspoint based memory array architecture |
| 06/28/2011 | US7970209 Holographic data storage using oversampling and balanced codewords |
| 06/23/2011 | WO2011075453A1 Program cycle skip |
| 06/23/2011 | WO2011075452A1 3d memory device with page register not like sense amplifier circuits and sense amplifier interface underneath memory array |
| 06/23/2011 | WO2011074021A1 Modified reset state for enhanced read margin of phase change memory |
| 06/23/2011 | WO2011073656A1 Quantum memory |
| 06/23/2011 | WO2011050331A3 Method for passivating a carbonic nanolayer |
| 06/23/2011 | US20110153916 Hybrid memory architectures |
| 06/21/2011 | US7965534 Memory device, data recording method and IC tag |
| 06/16/2011 | WO2011071594A2 Energy-efficient set write of phase change memory with switch |
| 06/16/2011 | WO2011070599A1 Apparatus and method for reading a phase-change memory cell |
| 06/16/2011 | WO2011070164A1 Reconfigurable boolean cells having a criss-crossed nanowire matrix |
| 06/16/2011 | WO2011069697A1 RESISTIVE SWITCHING IN NITROGEN-DOPED MgO |
| 06/16/2011 | US20110141790 Memory Module Having High Data Processing Rate |
| 06/15/2011 | EP1847999A9 Circuit and a method of determining the resistive state of a resistive memory cell |
| 06/15/2011 | EP1673780B1 Ac sensing for a resistive memory |
| 06/15/2011 | CN102099863A Method of writing for resistance-change non-volatile memory element, and resistance-change non-volatile memory device |
| 06/15/2011 | CN101261880B Programmable conductor random access memory and method for sensing same |
| 06/14/2011 | US7961539 Method of operating semiconductor device |
| 06/09/2011 | WO2011066650A1 Method and system for a run-time reconfigurable computer architecture |
| 06/09/2011 | US20110134679 Memory module having optical beam path, apparatus including the module, and method of fabricating the module |
| 06/09/2011 | DE102009056740A1 Memory element i.e. bipolar switching memory element, for resistive RAM, has memory cell connected in series with another memory cell, where each cell exhibits two stable states with respective high and low electrical resistances |
| 06/09/2011 | CA2782142A1 Method and system for a run-time reconfigurable computer architecture |
| 06/08/2011 | EP1501124B1 Solid electrolyte switching devices, fpga and memory devices using the same, and method of manufacturing the same |
| 06/08/2011 | CN1820325B Method and system for manufacturing polymer memory device formed in via opening |
| 06/08/2011 | CN101681912B Resistive nonvolatile memory element and method of manufacture and drive method thereof |
| 06/07/2011 | US7956497 Electret device and electrostatic induction conversion apparatus comprising the same |
| 06/07/2011 | US7956427 Nanosensors |
| 06/03/2011 | WO2011066584A1 Resistance based memory circuit with digital sensing |
| 06/03/2011 | WO2011066034A2 Resetting phase change memory bits |
| 06/03/2011 | WO2011064801A1 Memory including a low thermal budget selector switch on a variable resistance memory cell |
| 06/03/2011 | WO2011064057A1 Phase change memory element |
| 06/01/2011 | DE102010060804A1 Gespeicherte Multi-Bit-Daten gekennzeichnet durch mehrdimensionale Speicherzustände Saved multi-bit data characterized by multidimensional memory states |
| 06/01/2011 | CN102084429A Method of driving non-volatile memory elements |
| 06/01/2011 | CN101252170B Full epitaxial electric resistance changing multi-layer films based on silicon substrate, method and application thereof |
| 06/01/2011 | CN101034732B Resistance random memory device |
| 05/31/2011 | US7952796 Quantum optical data storage |
| 05/25/2011 | CN102077348A Nonvolatile memory element and semiconductor memory device provided with same |
| 05/25/2011 | CN102077297A Nonvolatile memory device and method for writing data to nonvolatile memory device |
| 05/25/2011 | CN102077296A Forming method for resistance-change non-volatile memory element, and resistance-change non-volatile memory device |
| 05/25/2011 | CN102077295A Pulse reset for non-volatile storage |
| 05/25/2011 | CN102077294A Capacitive discharge method for writing to non-volatile memory |
| 05/25/2011 | CN102077293A Simultaneous write and verify in a non-volatile storage |
| 05/25/2011 | CN102077292A Reverse set with current limit for non-volatile storage |
| 05/25/2011 | CN101681913B Variable resistive element, method for manufacturing the variable resistive element and nonvolatile semiconductor storage device |
| 05/25/2011 | CN101636840B Nonvolatile memory element, nonvolatile memory device, nonvolatile semiconductor device, and method for manufacturing nonvolatile memory element |