| Patents for G11C 13 - Digital stores characterised by the use of storage elements not covered by groups , , or (8,663) |
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| 05/20/2009 | EP1792149A4 Random access memory including nanotube switching elements |
| 05/19/2009 | US7535744 Semiconductor integrated circuit and IC card system having internal information protection |
| 05/19/2009 | US7535035 Cross-point nonvolatile memory devices using binary metal oxide layer as data storage material layer and methods of fabricating the same |
| 05/14/2009 | WO2009061834A1 Low-cost, high-density rectifier matrix memory |
| 05/14/2009 | US20090122602 Semiconductor integrated circuit device |
| 05/14/2009 | US20090121210 Formation of self-assembled monolayers on silicon substrates |
| 05/13/2009 | EP2057633A2 Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same |
| 05/13/2009 | EP1593164A4 Devices having vertically-disposed nanofabric articles and methods of making the same |
| 05/13/2009 | EP1592551A4 Nanofabric articles and methods of making the same |
| 05/13/2009 | CN100487800C Apparatus, system, and method for converting between serial data and encoded holographic data |
| 05/07/2009 | WO2009057275A1 Nonvolatile storage device and nonvolatile data recording medium |
| 05/07/2009 | US20090118583 Switching mechanism for altering operation with light |
| 05/07/2009 | US20090116277 Nano-electronic memory array |
| 05/07/2009 | US20090116276 Memory device, data recording method and ic tag |
| 05/06/2009 | CN100485983C Semiconductor device with tunable energy band gap |
| 05/05/2009 | US7528437 EEPROMS using carbon nanotubes for cell storage |
| 05/05/2009 | US7528405 Conductive memory stack with sidewall |
| 04/30/2009 | US20090108247 Memory Device |
| 04/30/2009 | DE102005005938B4 Resistives Speicherelement mit verkürzter Löschzeit, Verfahren zur Herstellung und Speicherzellen-Anordnung Resistive memory element with a shorter extinction time, methods of making and memory cell arrangement |
| 04/29/2009 | CN100483767C Silver-selenide/chalcogenide glass stack for resistance variable memory |
| 04/29/2009 | CN100483549C Complementary bit pcram sense amplifier and method of operation |
| 04/29/2009 | CN100483546C Software refreshed memory device and method |
| 04/29/2009 | CN100483545C Programmable conductor random access memory and method for sensing same |
| 04/29/2009 | CN100483542C Nonvolatile memory cell and non-volatile semiconductor memory device |
| 04/29/2009 | CN100483540C Resistance crosspoint storage array with charge injection differential read-out amplifier |
| 04/28/2009 | US7525410 Point contact array, not circuit, and electronic circuit using the same |
| 04/28/2009 | US7524589 Holographic recording medium and recording method |
| 04/23/2009 | WO2009051276A1 Information processing system |
| 04/23/2009 | WO2009051274A1 Nonvolatile semiconductor memory device |
| 04/23/2009 | WO2009050969A1 Nonvolatile semiconductor memory device |
| 04/23/2009 | WO2009049666A1 Nanotube device |
| 04/23/2009 | US20090103345 Three-dimensional memory module architectures |
| 04/22/2009 | EP1329958B1 Electronic device having controllable conductance |
| 04/22/2009 | CN101416252A Nonvolatile rewriteable memory cell comprising a resistivity-switching oxide or nitride and an antifuse |
| 04/22/2009 | CN101414658A Solid-state electrolytic solution resistance change memory and preparation method thereof |
| 04/22/2009 | CN100481389C Programmable resistive RAM and manufacturing method thereof |
| 04/22/2009 | CN100481259C Method of driving a non-volatile flip-flop circuit using variable resistor elements |
| 04/22/2009 | CN100481254C Storage apparatus and semiconductor apparatus |
| 04/21/2009 | US7521736 Electromechanical three-trace junction devices |
| 04/21/2009 | US7521706 Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the same |
| 04/16/2009 | DE102008041810A1 Phasenwechselspeicherbauelement für eine Mehr-Bit-Speicherung Phase change memory device for multibit storage |
| 04/16/2009 | DE102008030857A1 Mehrfach-Schreibkonfigurationen für eine Speicherzelle Multiple write configurations for a memory cell |
| 04/15/2009 | EP2048713A2 Multi-layer electrode, cross point memory array and method of manufacturing the same |
| 04/15/2009 | EP1994489A4 Method of reducing electro-static discharge (esd) from conductors on insulators |
| 04/15/2009 | EP1723676A4 Nano-enabled memory devices and anisotropic charge carrying arrays |
| 04/15/2009 | CN100479057C Nonvolatile semiconductor memory device and control method thereof |
| 04/14/2009 | US7518905 High density memory device |
| 04/09/2009 | US20090091352 Nanotube-based switching elements with multiple controls |
| 04/09/2009 | DE102005004338B4 Phasenänderungs-Speicherbauelement und zugehöriges Programmierverfahren Phase-change memory device and associated programming method |
| 04/08/2009 | CN101405796A 全息存储材料 Holographic storage material |
| 04/02/2009 | WO2009042293A1 Phase change memory structures |
| 04/02/2009 | WO2009041041A1 Nonvolatile memory element, nonvolatile semiconductor storage device, and method for reading data from the memory element and storage device and method for writing data in the memory element and storage device |
| 04/02/2009 | US20090087630 Carbon nanotube films, layers, fabrics, ribbons, elements and articles |
| 04/02/2009 | DE102008047409A1 Storing holographic data, comprises providing holographic storage medium comprising optically transparent substrate (photochemically active polynitrone dye) and irradiating transparent substrate with holographic interference pattern |
| 04/01/2009 | EP1825478B1 Semiconductor device and method for manufacturing the same |
| 04/01/2009 | CN101401106A Method of reducing electro-static discharge (esd) from conductors on insulators |
| 04/01/2009 | CN100474590C Storage device using vertical nano tube |
| 04/01/2009 | CN100474452C Novel method and structure for efficient data verification operation for non-volatile memories |
| 04/01/2009 | CN100474448C Phase random access memory with high density |
| 03/31/2009 | US7511318 Electromechanical memory array using nanotube ribbons and method for making same |
| 03/31/2009 | US7510695 nanoscale array of microwells is provided on a substrate; a metal catalyst is deposited in each microwells; and a stream of hydrocarbon or CO feedstock gas is directed at the substrate under conditions that effect growth of fullerene nanotubes from each microwell |
| 03/26/2009 | WO2009038220A1 Resistance-changing memory device |
| 03/26/2009 | WO2009005614A3 3d r/w cell with diode and resistive semiconductor element and method of making thereof |
| 03/26/2009 | US20090081824 Stacked organic memory devices and methods of operating and fabricating |
| 03/26/2009 | US20090079009 Memory device, memory circuit and semiconductor integrated circuit having variable resistance |
| 03/25/2009 | EP2040256A1 Device for recording and reading data on a holographic storage medium |
| 03/25/2009 | CN101395716A Nonvolatile storage element, nonvolatile storage device and method for manufacturing such element and device |
| 03/25/2009 | CN100472647C Non-volatile semiconductor memory |
| 03/25/2009 | CN100472619C System for reading data stored on an optical information carrier |
| 03/25/2009 | CN100472615C Apparatus and method for recording and reproducing optical information |
| 03/24/2009 | US7508732 Multi-bit flash memory device including memory cells storing different numbers of bits |
| 03/19/2009 | WO2009034687A1 Nonvolatile storage apparatus and method for writing data into nonvolatile storage apparatus |
| 03/19/2009 | US20090072210 Switching device |
| 03/18/2009 | CN101388435A Resistive random access memory and method for manufacturing the same |
| 03/18/2009 | CN100470870C Low current and high speed phase change storage device and method for driving same |
| 03/12/2009 | US20090065764 Methods and devices for forming nanostructure monolayers and devices including such monolayers |
| 03/12/2009 | DE102008045963A1 Mehrpegelspeicher und Verfahren zum Betreiben derselben Multi-level memory and method of operating the same |
| 03/12/2009 | DE102004040751B4 Resistiv schaltende nicht-flüchtige Speicherzelle auf der Basis von Alkali-Ionendrift, Verfahren zur Herstellung und Verwendung einer Verbindung zur Herstellung Resistive-switching non-volatile memory cell based on alkali metal ion drift, process for the preparation and use of a compound for the preparation of |
| 03/11/2009 | EP1723534B1 Data sampling clock edge placement training for high speed gpu-memory interface |
| 03/11/2009 | CN100468808C Storage device |
| 03/11/2009 | CN100468571C Memory device |
| 03/11/2009 | CN100468564C Data readout circuit and semiconductor device having the same |
| 03/10/2009 | US7502251 Phase-change memory device and method of writing a phase-change memory device |
| 03/10/2009 | US7502244 Data storage device |
| 03/10/2009 | US7502208 Magneto-resistive effect element, magnetic sensor using magneto-resistive effect, magnetic head using magneto-resistive effect and magnetic memory |
| 03/10/2009 | US7501315 Methods and devices for forming nanostructure monolayers and devices including such monolayers |
| 03/04/2009 | CN101379565A Memory having nanotube transistor access device |
| 03/04/2009 | CN100466181C Electromechanical memory array using nanotube ribbons and the production method thereof |
| 03/04/2009 | CN100465866C Optical system design for a universal computing device |
| 03/03/2009 | US7500213 Array-based architecture for molecular electronics |
| 03/03/2009 | US7498699 Electret and composite formed therewith |
| 02/26/2009 | WO2009025037A1 Resistance variable element |
| 02/26/2009 | US20090053846 Methods of Making Electromechanical Three-Trace Junction Devices |
| 02/26/2009 | DE102008038371A1 Speicher mit variablem Widerstand und Betriebsverfahren desselben The same memory variable resistance and operating procedures |
| 02/26/2009 | DE102008033353A1 Integrierte Schaltung, die ein unter Druck eingefülltes, seine Resistivität änderndes Material aufweist Integrated circuit comprising a under pressure is completed, its resistivity change material |
| 02/25/2009 | EP1738421B1 Layered resistance variable memory device and method of fabrication |
| 02/25/2009 | EP1665242B1 System for reading data stored on an optical information carrier |
| 02/25/2009 | CN101375344A Mixed-scale electronic interface |
| 02/25/2009 | CN101375343A Control layer for a nanoscale electronic switching device |
| 02/25/2009 | CN101375342A Tunneling-resistor-junction-based microscale/nanoscale demultiplexer arrays |