| Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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| 01/15/2015 | US20150016180 Memory architectures having dense layouts |
| 01/15/2015 | US20150016179 Memory circuit |
| 01/15/2015 | US20150016175 CMOS Analog Memories Utilizing Ferroelectric Capacitors |
| 01/15/2015 | US20150016042 Packaging substrate that has electroplated pads that are free of plating tails |
| 01/15/2015 | US20150014800 Mtj memory cell with protection sleeve and method for making same |
| 01/15/2015 | US20150014789 Integrated circuits with aligned (100) nmos and (110) pmos finfet sidewall channels |
| 01/14/2015 | EP2823486A1 Voltage mode sensing for low power flash memory |
| 01/14/2015 | EP2823484A1 Composed memory array comprising a flash array and a ram array with data write to the ram array and data read from the flash array |
| 01/14/2015 | CN204102573U 一种同时提高读噪声容限和写裕度的新型12管sram单元电路 While improving reading a novel 12 sram cell circuit noise margin and write margin |
| 01/14/2015 | CN104285291A 存储设备和存储器件 Storage devices and memory devices |
| 01/14/2015 | CN104285256A 非易失性存储器中不插入擦除的多个写入操作 A plurality of non-volatile memory write operation is not inserted erased |
| 01/14/2015 | CN104282693A 包括双端口静态随机访问存储器单元的装置及其形成方法 Including dual-port static random access device memory cell and method of forming |
| 01/14/2015 | CN104282654A 半导体装置 Semiconductor device |
| 01/14/2015 | CN104282331A 一种自适应抗软错误存储单元及存储电路 An adaptive anti-soft-error memory unit and memory circuits |
| 01/14/2015 | CN104282330A 增加动态随机存储器可靠性的方法和电路 And a method of increasing the reliability of the dynamic random access memory circuit |
| 01/14/2015 | CN104282329A 电熔丝的启动方法、半导体器件以及包括其的半导体系统 Start method, semiconductor devices and electrical fuses including semiconductor system |
| 01/14/2015 | CN104282328A 周期信号发生装置 Periodic signal generating means |
| 01/14/2015 | CN104282327A 降低自旋力矩转移磁阻性随机存取存储器(stt-mram)中的源极负载效应 Reduce the loading effect of the source spin torque transfer magnetoresistive random access memory (stt-mram) of |
| 01/14/2015 | CN102598139B 具有非欧姆选择层的非易失性存储单元 A nonvolatile memory cell having a non-ohmic layer selection |
| 01/14/2015 | CN102439665B 包括电阻切换元件的多位电阻切换存储器单元 Resistance-switching element comprising a number of resistive switching memory cell |
| 01/14/2015 | CN102214483B SeOI上的伪反相器电路 Pseudo-inverter SeOI circuit on |
| 01/14/2015 | CN101828233B 多值存储设备、系统和方法 Multi-value storage devices, systems and methods |
| 01/13/2015 | US8935595 LDPC erasure decoding for flash memories |
| 01/13/2015 | US8935467 Memory system, and a method of controlling an operation thereof |
| 01/13/2015 | US8935461 Memory unit outputting a required time for a rewrite and method for controlling CPU |
| 01/13/2015 | US8934314 Apparatus and method for improving power delivery in a memory, such as, a random access memory |
| 01/13/2015 | US8934313 Negative voltage generator and semiconductor memory device |
| 01/13/2015 | US8934311 Semiconductor memory device capable of screening a weak bit and repairing the same |
| 01/13/2015 | US8934309 Semiconductor integrated circuit and semiconductor physical quantity sensor device |
| 01/13/2015 | US8934308 Tracking bit cell |
| 01/13/2015 | US8934306 Memory and sense parameter determination methods |
| 01/13/2015 | US8934305 Nonvolatile memory device, method of operating the same and electronic device including the same |
| 01/13/2015 | US8934304 Operating method of nonvolatile memory device and operating method of memory system including nonvolatile memory device |
| 01/13/2015 | US8934301 Memory controller for multi-level memory device and error correcting method |
| 01/13/2015 | US8934298 Nonvolatile memory device and related programming method |
| 01/13/2015 | US8934297 Method and system for programming non-volatile memory cells based on programming of proximate memory cells |
| 01/13/2015 | US8934296 Dual-port semiconductor memory and first in first out (FIFO) memory having electrically floating body transistor |
| 01/13/2015 | US8934295 Compensation scheme for non-volatile memory |
| 01/13/2015 | US8934294 Semiconductor integrated circuit device, method of manufacturing the same, and method of driving the same |
| 01/13/2015 | US8934293 Means and method for operating a resistive array |
| 01/13/2015 | US8934292 Balanced method for programming multi-layer cell memories |
| 01/13/2015 | US8934291 Interleaved array architecture |
| 01/13/2015 | US8934290 Magnetoresistance effect device and method of production of the same |
| 01/13/2015 | US8934289 Multiple bit nonvolatile memory based on current induced domain wall motion in a nanowire magnetic tunnel junction |
| 01/13/2015 | US8934288 Magnetic memory devices |
| 01/13/2015 | US8934287 Multiple-port SRAM device |
| 01/13/2015 | US8934286 Complementary metal-oxide-semiconductor (CMOS) dynamic random access memory (DRAM) cell with sense amplifier |
| 01/13/2015 | US8934284 Methods and apparatuses using a transfer function to predict resistance shifts and/or noise of resistance-based memory |
| 01/13/2015 | US8934283 Semiconductor memory device, semiconductor device and method of manufacturing semiconductor memory device |
| 01/13/2015 | US8934282 Circuitry including resistive random access memory storage cells and methods for forming same |
| 01/13/2015 | US8934281 Bit set modes for a resistive sense memory cell array |
| 01/13/2015 | US8934280 Capacitive discharge programming for two-terminal memory cells |
| 01/13/2015 | US8934279 Stack processor using a ferroelectric random access memory (F-RAM) for code space and a portion of the stack memory space |
| 01/13/2015 | US8934053 Hand-held quad core processing apparatus |
| 01/13/2015 | US8934027 Portable device with image sensors and multi-core processor |
| 01/13/2015 | US8933750 Magnetic logic units configured as an amplifier |
| 01/13/2015 | US8933747 Semiconductor chip package including voltage generation circuit with reduced power noise |
| 01/08/2015 | WO2015002901A1 Detecting programmed word lines based on nand string current |
| 01/08/2015 | WO2015002897A1 Write operations for defect management in nonvolatile memory |
| 01/08/2015 | WO2015002839A1 Memory cells, methods of operation and fabrication, semiconductor device structures, and memory systems |
| 01/08/2015 | WO2015002727A1 Hybridized oxide capping layer for perpendicular magnetic anisotropy |
| 01/08/2015 | WO2015002704A1 Dram sub-array level refresh |
| 01/08/2015 | WO2015001722A1 Semiconductor storage device |
| 01/08/2015 | US20150012672 Ic card and ic card system having suspend/resume functions |
| 01/08/2015 | US20150009769 Dram sub-array level refresh |
| 01/08/2015 | US20150009768 Semiconductor device, semiconductor memory device, and method for driving the same |
| 01/08/2015 | US20150009765 Latency control device and semiconductor device including the same |
| 01/08/2015 | US20150009751 Methods and systems to selectively boost an operating voltage of, and controls to an 8t bit-cell array and/or other logic blocks |
| 01/08/2015 | US20150009750 Device including a dual port static random access memory cell and method for the formation thereof |
| 01/08/2015 | US20150009749 Memory cell array |
| 01/08/2015 | US20150009747 Phase switchable bistable memory device, a frequency divider and a radio frequency transceiver |
| 01/08/2015 | US20150009746 Solid-State Quantum Memory Based on a Nuclear Spin Coupled to an Electronic Spin |
| 01/08/2015 | US20150009744 Non-volatile memory device |
| 01/08/2015 | US20150009741 Valid command detection based on stack position identifiers in memory devices configured for stacked arrangements |
| 01/08/2015 | DE112012006171T5 On-Chip-Redundanzreparatur für Speichergeräte On-chip redundancy for memory repair devices |
| 01/08/2015 | DE102004050037B4 Speicherbauelement, Speichersystem und Betriebsmodussetzverfahren Memory device, memory system and operating mode setting procedure |
| 01/07/2015 | EP2821998A1 Non-volatile memory device |
| 01/07/2015 | EP2820651A2 Multi-free layer mtj and multi-terminal read circuit with concurrent and differential sensing |
| 01/07/2015 | EP2820650A1 Multi-level memory, multi-level memory writing method, and multi-level memory reading method |
| 01/07/2015 | CN104272393A 为存储器的块调整编程步长的系统和方法 Adjust the step size of the programming system and method for a memory block |
| 01/07/2015 | CN104272392A 从多级单元存储器读取数据 Reading data from the multilevel cell memory |
| 01/07/2015 | CN104272391A 包括用于半导体存储器电路的磁性隧道结元件的可调谐参考电路 Include a magnetic tunnel junction element for a semiconductor memory circuit of the tunable reference circuit |
| 01/07/2015 | CN104272390A 包括闪存阵列和ram阵列的组成的存储器阵列且其具有数据写入ram阵列和从闪存阵列读取数据 Flash memory array includes an array of arrays composed and ram and ram it has data written to and read from the flash memory array array data |
| 01/07/2015 | CN104269186A 具有多电平的相变存储器设备及其驱动方法 Phase change memory device and a driving method of the multi-level |
| 01/07/2015 | CN102376707B 半导体装置 Semiconductor device |
| 01/06/2015 | US8930803 Detecting codewords in solid-state storage devices |
| 01/06/2015 | US8930779 Bit-replacement technique for DRAM error correction |
| 01/06/2015 | US8930616 System refresh in cache memory |
| 01/06/2015 | US8929171 Voltage supply controller, nonvolatile memory device and memory system |
| 01/06/2015 | US8929168 Sense amplifier voltage regulator |
| 01/06/2015 | US8929167 MRAM self-repair with BIST logic |
| 01/06/2015 | US8929165 Memory device |
| 01/06/2015 | US8929154 Layout of memory cells |
| 01/06/2015 | US8929153 Memory with multiple word line design |
| 01/06/2015 | US8929149 Semiconductor memory device and method of operating the same |
| 01/06/2015 | US8929148 Semiconductor memory device having improved erase characteristic of memory cells and erase method thereof |
| 01/06/2015 | US8929147 Determining threshold voltage distribution in flash memory |
| 01/06/2015 | US8929140 Memory system in which a read level is changed based on standing time and at least one of a read, write or erase count |
| 01/06/2015 | US8929139 Method and apparatus for leakage suppression in flash memory |
| 01/06/2015 | US8929137 Operating method of memory having redundancy circuitry |