Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
02/2015
02/17/2015US8957399 Nonvolatile memory element and nonvolatile memory device
02/17/2015US8956883 Magnetic tunnel junctions and fabrication method thereof
02/12/2015WO2015021021A1 Data storage system with dynamic erase block grouping mechanism and method of operation thereof
02/12/2015WO2015019411A1 Semiconductor integrated circuit device
02/12/2015US20150046760 Memory channel having deskew separate from redrive
02/12/2015US20150046723 Sense-amplifier driving device and semiconductor device including the same
02/12/2015US20150046625 Solid state drive architectures
02/12/2015US20150043299 Semiconductor device
02/12/2015US20150043298 Electronic device
02/12/2015US20150043295 Method of refreshing volatile memory device
02/12/2015US20150043294 Memory device, memory system and operating method thereof
02/12/2015US20150043290 Memory module
02/12/2015US20150043273 Josephson magnetic memory cell system
02/12/2015US20150043272 Spin-Transfer Torque Magnetic Random Access Memory (STTMRAM) With Enhanced Write Current
02/12/2015US20150043271 Adaptive dual voltage write driver with dummy resistive path tracking
02/12/2015US20150043270 Memory cell having built-in write assist
02/12/2015US20150043269 Electric charge flow circuit for a time measurement
02/12/2015US20150042378 Buffered memory module having multi-valued on-die termination
02/12/2015US20150042376 Nonvolatile resistor network assembly and nonvolatile logic gate with increased fault tolerance using the same
02/12/2015US20150041885 Semiconductor memory device
02/12/2015DE112012006353T5 Adaptiver Spannungseingang zu einer Ladungspumpe Adaptive voltage input to a charge pump
02/12/2015DE10326088B4 Autoeinstellung einer Selbstauffrischfrequenz Auto setting a Selbstauffrischfrequenz
02/12/2015DE102008016522B4 Phasenwechselspeicherzelle mit Phasenwechsel-Speichermaterial mit begrenztem Widerstand, Verfahren zur Herstellung einer deratigen Speicherzelle und integrierte Schaltung mit entsprechender Speicherzelle Phase change memory cell with phase change memory material with limited resistance, to methods for the preparation of a deratigen memory cell and integrated circuit with a corresponding memory cell
02/12/2015DE102007004713B4 Datenübergabeeinheit zum Übertragen von Daten zwischen unterschiedlichen Taktbereichen Data transfer unit for transferring data between different clock domains
02/12/2015DE102005062769B4 Hybrid-Speicherzelle für durch spinpolarisierten Elektronenstrom induziertes Schalten und Schreib/Leseprozess, der eine derartige Speicherzelle verwendet Hybrid memory cell for induced by spin-polarized electron current switching and write / read process that uses such memory cell
02/11/2015CN104350625A 铁电装置、相互连接件、及其制造方法 Ferroelectric device, interconnectors, and manufacturing method thereof
02/11/2015CN104350546A 行锤击刷新命令 Refresh command line hammering
02/11/2015CN104347796A 具有垂直磁隧道结的磁存储装置 Magnetic storage device having a perpendicular magnetic tunnel junction
02/11/2015CN104347112A 半导体装置以及数据读取方法 Semiconductor device and method for reading data
02/11/2015CN104347111A 半导体集成电路器件 The semiconductor integrated circuit device
02/11/2015CN104347110A 半导体存储器件 A semiconductor memory device
02/11/2015CN104347109A 存储器件、存储系统及其操作方法 Memory device, the storage system and operating method thereof
02/11/2015CN104347108A 存储器、包括其的存储系统以及操作存储器的方法 Memory, including memory storage system and an operation method
02/11/2015CN104347107A 存储器件和包括其的存储系统 Memory devices and including storage systems
02/11/2015CN104347106A 半导体器件 Semiconductor devices
02/11/2015CN102856489B 磁阻元件和磁存储器 Magnetoresistive element and magnetic memory
02/11/2015CN102750980B 一种具有配置电路的相变存储器芯片 Circuit configuration having a phase change memory chips
02/11/2015CN102709306B 基于忆阻器和晶体管的存储器及实现多阻态的方法 Memristor-based memory and transistors and multi-impedance method
02/11/2015CN102637691B 提高静态随机存储器读出冗余度的方法 Improve redundancy readout method of static random access memory
02/11/2015CN102543164B 一种航天器dsp芯片的数据保护方法 Data protection method for spacecraft dsp chip
02/11/2015CN102290098B 电源电平升高的可编程逻辑器件存储器单元 Power level rises programmable logic device memory cell
02/11/2015CN102282621B 自旋转移力矩磁阻随机存取存储器内的位线电压控制 Spin Transfer Torque Magnetoresistive Random Access memory bit line voltage control
02/11/2015CN102272847B 在磁性隧道结元件处读取及写入数据的系统及方法 System and method to read and write data in a magnetic tunnel junction element at
02/11/2015CN102119422B 对称stt-mram位单元阵列及其形成方法 Symmetrical stt-mram bit cell array and method of forming
02/11/2015CN102024816B 半导体存储器件 A semiconductor memory device
02/11/2015CN101814315B 可增加写入裕量的静态随机存取存储器 Increase the write margin of static random access memory
02/11/2015CN101814314B 使用可能性写入对mram单元进行编程的方法 The possibility of using the writing method of programming a cell mram
02/10/2015US8954703 Methods of sanitizing a flash-based data storage device
02/10/2015US8953407 Sub word line driver and semiconductor integrated circuit device
02/10/2015US8953403 Semiconductor memory device
02/10/2015US8953402 Semiconductor memory with sense amplifier
02/10/2015US8953401 Memory device and method for driving memory array thereof
02/10/2015US8953399 Differential sense amplifier without dedicated pass-gate transistors
02/10/2015US8953392 Latency control device and semiconductor device including the same
02/10/2015US8953388 Memory cell assembly including an avoid disturb cell
02/10/2015US8953385 Method of programming non-volatile memory device and apparatuses for performing the method
02/10/2015US8953384 Sense amplifier for flash memory
02/10/2015US8953381 Semiconductor memory device and method of operating the same
02/10/2015US8953379 Apparatuses and methods of reprogramming memory cells
02/10/2015US8953378 Split gate programming
02/10/2015US8953377 Nonvolatile memory device and data storage device including the same
02/10/2015US8953374 Programming based on controller performance requirements
02/10/2015US8953372 Memory device readout using multiple sense times
02/10/2015US8953371 Semiconductor storage device
02/10/2015US8953370 Memory cell with decoupled read/write path
02/10/2015US8953369 Magnetoresistive element and magnetic memory using the same
02/10/2015US8953368 Magnetic memory device having bidirectional read scheme
02/10/2015US8953367 Three-dimensional memory array and operation scheme
02/10/2015US8953366 Magnetic random access memory device
02/10/2015US8953365 Capacitor backup for SRAM
02/10/2015US8953364 Voltage rail noise sensing circuit and method
02/10/2015US8953363 Nonvolatile semiconductor memory device and read method for the same
02/10/2015US8953362 Resistive devices and methods of operation thereof
02/10/2015US8953361 Stack memory apparatus
02/10/2015US8953360 Apparatus and method for reading a phase-change memory cell
02/10/2015US8953359 Semiconductor memory device
02/10/2015US8953358 Memory device and method for driving memory device
02/10/2015US8953178 Camera system with color display and processor for reed-solomon decoding
02/10/2015US8953061 Image capture device with linked multi-core processor and orientation sensor
02/10/2015US8953060 Hand held image capture device with multi-core processor and wireless interface to input device
02/10/2015US8952719 Memory with termination circuit
02/10/2015US8952718 Termination circuit and DC balance method thereof
02/10/2015US8952716 Method of detecting defects in a semiconductor device and semiconductor device using the same
02/10/2015US8952437 DRAM cell design with folded digitline sense amplifier
02/10/2015US8952436 Integrated DRAM memory device
02/10/2015US8952350 Non-volatile memory device and manufacturing method thereof
02/10/2015US8952349 Switching device having a non-linear element
02/10/2015CA2805048C A high speed dram achitecture with uniform access latency
02/05/2015WO2015017719A1 Data storage system with dynamic read threshold mechanism and method of operation thereof
02/05/2015WO2015017281A1 Shared-gate vertical-tft for vertical bit line array
02/05/2015WO2015017164A1 Sram read buffer with reduced sensing delay and improved sensing margin
02/05/2015WO2015017134A1 System and method to provide a reference cell comprising four magnetic tunnel junction elements
02/05/2015WO2015015007A1 Storage device with magnetic skyrmions and associated method
02/05/2015US20150039967 Memory device having adjustable refresh period and method of operating the same
02/05/2015US20150039821 Communication apparatus and data processing method
02/05/2015US20150039809 Nonvolatile memory system and programming method including reprogram operation
02/05/2015US20150036448 Output circuit for implementing high speed data transmition
02/05/2015US20150036445 Semiconductor device
02/05/2015US20150036440 Semiconductor devices and semiconductor systems including the same
02/05/2015US20150036439 Semiconductor device
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