Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
01/2015
01/28/2015CN104318953A 静态随机存取存储器单元 Static random access memory cell
01/28/2015CN104318952A Dram中一种减少电压端口的电路及方法 Dram a reduction in voltage port circuit and method
01/28/2015CN102855927B 抗辐射sram时序控制电路及时序处理方法 Rad sram timing control circuit and timing approach
01/28/2015CN102789807B 具有二极管在存储串列中的三维阵列存储器架构 Having a diode in tandem in a three-dimensional array storage memory architecture
01/28/2015CN102742003B 半导体器件 Semiconductor devices
01/28/2015CN102742002B 半导体器件及其驱动方法 Semiconductor device and method of driving
01/28/2015CN102282622B 磁性随机存取存储器(mram)的原位电阻测量 Magnetic random access memory (mram) resistance measurement situ
01/27/2015US8943387 Programming management data for a memory
01/27/2015US8943267 Management of memory refresh power consumption
01/27/2015US8942056 Protocol for memory power-mode control
01/27/2015US8942054 Systems, memories, and methods for operating memory arrays
01/27/2015US8942047 Bit line current trip point modulation for reading nonvolatile storage elements
01/27/2015US8942046 Method of programming a 3-dimensional nonvolatile memory device based on a program order of a selected page and a location of a string selection line
01/27/2015US8942041 Memory device and column decoder for reducing capacitive coupling effect on adjacent memory cells
01/27/2015US8942039 Nonvolatile semiconductor memory device
01/27/2015US8942038 High endurance nonvolatile memory
01/27/2015US8942037 Threshold acquisition and adaption in NAND flash memory
01/27/2015US8942036 Method for achieving four-bit storage using flash memory having splitting trench gate
01/27/2015US8942035 Non-sequential encoding scheme for multi-level cell (MLC) memory cells
01/27/2015US8942034 System and method of programming a memory cell
01/27/2015US8942033 Driving stage for phase change non-volatile memory devices provided with auto-calibration feature
01/27/2015US8942032 Method for magnetic screening of arrays of magnetic memories
01/27/2015US8942030 Structure and method for SRAM cell circuit
01/27/2015US8942029 Memory device
01/27/2015US8942028 Data reprogramming for a data storage device
01/27/2015US8942027 Memory storage circuit and method of driving memory storage circuit
01/27/2015US8942026 Circuit and method for reading a resistive switching device in an array
01/27/2015US8942025 Variable resistance nonvolatile memory element writing method
01/27/2015US8942023 Semiconductor device
01/27/2015US8942022 Embedded non-volatile memory circuit for implementing logic functions across periods of power disruption
01/27/2015US8941470 Methods and systems of a radio frequency network node RFID tag with hardened memory system
01/27/2015US8941428 Low power latching circuits
01/27/2015US8941197 Magnetic random access memory
01/27/2015US8941196 Precessional reversal in orthogonal spin transfer magnetic RAM devices
01/27/2015US8941186 Semiconductor device having vertical type transistor
01/27/2015US8941088 Nonvolatile memory with resistance change layer
01/22/2015WO2015008438A1 Nonvolatile semiconductor storage device and method for rewriting same
01/22/2015WO2015007847A1 Method for erasing a nonvolatile semiconductor memory using ionising radiation
01/22/2015US20150026537 Memory device with over-refresh and method thereof
01/22/2015US20150026399 Automatic Partial Array Self-Refresh
01/22/2015US20150023121 Memory refresh methods, memory section control circuits, and apparatuses
01/22/2015US20150023114 Semiconductor device and method for driving the same
01/22/2015US20150023096 Counterbalanced-switch mram
01/22/2015US20150023093 Method of writing to a spin torque magnetic random access memory
01/22/2015US20150023092 Ring-shaped magnetoresistive memory device and writing method thereof
01/22/2015US20150023091 Semiconductor Device Having Timing Control For Read-Write Memory Access Operations
01/22/2015US20150023090 Semiconductor memory device
01/22/2015US20150023087 Semiconductor memory
01/22/2015US20150023086 Multiport memory cell having improved density area
01/22/2015US20150023085 Semiconductor storage device
01/22/2015DE112010002919B4 Modulare dreidimensionale Kondensatormatrix Modular three-dimensional capacitor array
01/21/2015EP2827334A1 Semiconductor memory device that does not require a sense amplifier
01/21/2015EP2826035A1 Memory and logic device and methods for performing thereof
01/21/2015CN204119201U 一种延迟时间稳定的时钟树驱动电路 A method of delaying the time stable clock tree driving circuit
01/21/2015CN104303234A 存储电路 The memory circuit
01/21/2015CN104299644A 一种同时提高读噪声容限和写裕度的新型12管sram单元电路 While improving reading a novel 12 sram cell circuit noise margin and write margin
01/21/2015CN104299643A 半导体存储器 Semiconductor memory
01/21/2015CN104299642A 半导体器件和具有半导体器件的半导体系统 Semiconductor device and a semiconductor device having a semiconductor system
01/21/2015CN104299641A 多阶存储器的操作方法 Method of operation of multi-stage memory
01/21/2015CN104299640A 压摆率自适应调整的输出电路 Slew rate adaptive output circuit
01/21/2015CN104299639A 一种抗软失效存储单元以及锁存器和触发器 An anti-storage units and soft failures latches and flip-flops
01/21/2015CN102664041B 一种基于bist控制的可编程sram时序控制系统 Sram bist control a programmable timing control system based on
01/21/2015CN102543171B 一种具有冗余电路的相变存储器及其实现冗余的方法 Phase change memory and a method for redundancy with redundant circuits
01/21/2015CN102543158B 为易失性存储器提供独立的库刷新的方法和系统 Provide independent method for volatile memory and system library refresh
01/21/2015CN102177555B 具有通过忽略最快和/或最慢编程位减少编程验证的非易失性存储器和方法 Having reduced by ignoring the fastest and / or verify the slowest programming bit programming non-volatile memory and method
01/21/2015CN101923895B 具有多电平的相变存储器设备 Phase change memory devices having a multi-level
01/20/2015USRE45345 Nonvolatile semiconductor memory device
01/20/2015US8938658 Statistical read comparison signal generation for memory systems
01/20/2015US8938578 Memory device with multi-mode deserializer
01/20/2015US8938573 Row hammer condition monitoring
01/20/2015US8937845 Memory device redundancy management system
01/20/2015US8937844 Apparatus for generating write data and readout data
01/20/2015US8937843 Semiconductor device having counter circuit
01/20/2015US8937838 Finding optimal read thresholds and related voltages for solid state memory
01/20/2015US8937837 Bit line BL isolation scheme during erase operation for non-volatile storage
01/20/2015US8937835 Non-volatile storage with read process that reduces disturb
01/20/2015US8937834 Method of maintaining the state of semiconductor memory having electrically floating body transistor
01/20/2015US8937832 Magnetic memory
01/20/2015US8937831 System and method for modifying activation of a sense amplifier
01/20/2015US8937727 Portable handheld device with multi-core image processor
01/20/2015US8937304 Semiconductor device and electronic device
01/20/2015US8936196 Camera unit incorporating program script scanner
01/15/2015WO2015005976A1 Insertion-override counter to support multiple memory refresh rates
01/15/2015WO2015005975A1 Dram sub-array level autonomic refresh memory controller optimization
01/15/2015WO2015005903A1 Write flow control for memory modules that include or interface with non-compliant memory technologies
01/15/2015WO2015003553A1 Dynamic random access memory (dram) and production method, semiconductor packaging component and packaging method
01/15/2015US20150019805 Information processing apparatus, control method for the same, program for the same, and storage medium
01/15/2015US20150016207 Systems and Methods for Reducing Standby Power in Floating Body Memory Devices
01/15/2015US20150016204 Insertion-override counter to support multiple memory refresh rates
01/15/2015US20150016203 Dram sub-array level autonomic refresh memory controller optimization
01/15/2015US20150016200 Memory device for masking read data and a method of testing the same
01/15/2015US20150016195 Compensation circuit for use with input buffer and method of operating the same
01/15/2015US20150016192 Method of using non-volatile memories for on-dimm memory address list storage
01/15/2015US20150016187 Asymmetric log-likelihood ratio for flash channel
01/15/2015US20150016186 Methods and apparatuses for determining threshold voltage shift
01/15/2015US20150016185 Electro-Mechanical Diode Non-Volatile Memory Cell For Cross-Point Memory Arrays
01/15/2015US20150016184 Magnetic field sensing using magnetoresistive random access memory (mram) cells
01/15/2015US20150016183 Sense amplifier with transistor threshold compensation
01/15/2015US20150016182 Sram memory card and voltage monitoring circuit
01/15/2015US20150016181 Memory device and driving method of the memory device
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