| Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
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| 02/05/2015 | US20150036425 Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same |
| 02/05/2015 | US20150036424 Semiconductor memory device, memory system and access method to semiconductor memory device |
| 02/05/2015 | US20150036423 Semiconductor device |
| 02/05/2015 | US20150036422 Magnetic storage element, magnetic storage device, magnetic memory, and method of driving magnetic storage element |
| 02/05/2015 | US20150036421 Current sense amplifying circuit in semiconductor memory device |
| 02/05/2015 | US20150036420 Semiconductor storage device |
| 02/05/2015 | US20150036419 Semiconductor apparatus and data reading method |
| 02/05/2015 | US20150036418 Circuits for voltage or current biasing static random access memory (sram) bitcells during sram reset operations, and related systems and methods |
| 02/05/2015 | US20150036417 Sram read buffer with reduced sensing delay and improved sensing margin |
| 02/05/2015 | US20150036416 Multi-channel memory device with independent channel power supply structure and method of controlling power net |
| 02/05/2015 | US20150036415 Non-volatile memory cell |
| 02/05/2015 | US20150036409 System and method to provide a reference cell using magnetic tunnel junction cells |
| 02/05/2015 | US20150036408 Memory system and method using stacked memory device dice |
| 02/05/2015 | US20150036405 Memory Devices |
| 02/05/2015 | US20150035098 Memory cell with schottky diode |
| 02/05/2015 | US20150035097 Semiconductor storage device |
| 02/04/2015 | EP2833364A2 Non-volatile magnetic three electrodes memory cell and associated array |
| 02/04/2015 | EP2831884A1 Selected word line dependent select game voltage during program |
| 02/04/2015 | EP2831883A1 Selected word line dependent select gate diffusion region voltage during programnming |
| 02/04/2015 | EP2831882A1 Spin transfer torque based memory elements for programmable device arrays |
| 02/04/2015 | EP2831881A1 Magnetic state element and circuits |
| 02/04/2015 | EP2831880A1 Methods and systems to read a magnetic tunnel junction (mtj) based memory cell based on a pulsed read current |
| 02/04/2015 | EP2831694A1 A pulse clock generation logic with built-in level shifter and programmable rising edge and pulse width |
| 02/04/2015 | CN104335282A 用于可编程器件阵列的基于自旋转移矩的存储器元件 A memory element for a programmable element array based on the spin transfer torque of |
| 02/04/2015 | CN104332176A 一种省掉内存odt引脚的方法和系统 A method of eliminating the need for pins and the system memory odt |
| 02/04/2015 | CN104332175A 一种字块划分的低功耗磁存储器缓存架构设计方法 One kind of block low-power magnetic memory partition cache architecture design methodology |
| 02/04/2015 | CN102610272B 一种阻变存储器单元的编程和擦除方法及装置 A barrier method and apparatus for programming and erasing the memory cell change |
| 02/04/2015 | CN102099864B 具有极性控制的每单元多比特(mbc)的非易失性存储器设备和系统及其编程方法 Having a polarity control of multi-bit per cell (mbc) non-volatile memory devices and systems and programming |
| 02/03/2015 | US8949520 Maintenance operations in a DRAM |
| 02/03/2015 | US8949519 Simulating a memory circuit |
| 02/03/2015 | US8948215 High speed and high jitter tolerance dispatcher |
| 02/03/2015 | US8947971 Semiconductor device generating a clock signal when required |
| 02/03/2015 | US8947970 Word line driver circuits and methods for SRAM bit cell with reduced bit line pre-charge voltage |
| 02/03/2015 | US8947965 Techniques for providing a direct injection semiconductor memory device |
| 02/03/2015 | US8947964 Current sense amplifiers, memory devices and methods |
| 02/03/2015 | US8947962 On-die termination of address and command signals |
| 02/03/2015 | US8947954 Random access memory for use in an emulation environment |
| 02/03/2015 | US8947953 Bit cell internal voltage control |
| 02/03/2015 | US8947952 Input-output line sense amplifier having adjustable output drive capability |
| 02/03/2015 | US8947950 Semiconductor device |
| 02/03/2015 | US8947949 Mode changing circuitry |
| 02/03/2015 | US8947941 State responsive operations relating to flash memory cells |
| 02/03/2015 | US8947937 Host-managed logical mass storage device using magnetic random access memory (MRAM) |
| 02/03/2015 | US8947935 Integrated circuit and apparatuses including the same |
| 02/03/2015 | US8947930 Semiconductor memory device for storing multivalued data |
| 02/03/2015 | US8947929 Flash-based soft information generation |
| 02/03/2015 | US8947928 Flash memory device and memory system including the same |
| 02/03/2015 | US8947927 Gated diode memory cells |
| 02/03/2015 | US8947925 Thyristor memory cell integrated circuit |
| 02/03/2015 | US8947923 Memory cells with rectifying device |
| 02/03/2015 | US8947922 Method and apparatus for reading a magnetic tunnel junction using a sequence of short pulses |
| 02/03/2015 | US8947921 Multilevel magnetic element |
| 02/03/2015 | US8947920 Memory device |
| 02/03/2015 | US8947919 High capacity low cost multi-stacked cross-line magnetic memory |
| 02/03/2015 | US8947918 Semiconductor memory device |
| 02/03/2015 | US8947917 Thermal spin torque transfer magnetoresistive random access memory |
| 02/03/2015 | US8947916 Thermally assisted magnetic writing device |
| 02/03/2015 | US8947915 Thermal spin torqure transfer magnetoresistive random access memory |
| 02/03/2015 | US8947914 Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the same |
| 02/03/2015 | US8947913 Circuits and methods having programmable impedance elements |
| 02/03/2015 | US8947912 Memory cell including unidirectional gate conductors and contacts |
| 02/03/2015 | US8947911 Method and circuit for optimizing bit line power consumption |
| 02/03/2015 | US8947910 Semiconductor device comprising inverters and capacitor, and driving method thereof |
| 02/03/2015 | US8947909 System and method for creating a bipolar resistive RAM (RRAM) |
| 02/03/2015 | US8947908 Hetero-switching layer in a RRAM device and method |
| 02/03/2015 | US8947907 Current source circuits and methods for mass write and testing of programmable impedance elements |
| 02/03/2015 | US8947906 High-efficiency driving stage for phase change non-volatile memory devices |
| 02/03/2015 | US8947905 Nonvolatile memory devices and methods of driving the same |
| 02/03/2015 | US8947904 Data holding device and logic operation circuit using the same |
| 02/03/2015 | US8947903 Memory chip with more than one type of memory cell |
| 02/03/2015 | US8947900 Stable SRAM cell |
| 02/03/2015 | US8947679 Portable handheld device with multi-core microcoded image processor |
| 02/03/2015 | US8947592 Handheld imaging device with image processor provided with multiple parallel processing units |
| 02/03/2015 | US8946834 High thermal stability free layer with high out-of-plane anisotropy for magnetic device applications |
| 02/03/2015 | US8946809 Method for manufacturing semiconductor memory device and semiconductor memory device |
| 02/03/2015 | US8946666 Ge-Rich GST-212 phase change memory materials |
| 02/03/2015 | US8945999 SRAM cell with different crystal orientation than associated logic |
| 02/03/2015 | US8945950 STT-MRAM cell structures |
| 01/29/2015 | WO2015013689A2 Nand array hiarchical bl structures for multiple-wl and all -bl simultaneous erase, erase-verify, program, program-verify, and read operations |
| 01/29/2015 | WO2015011050A1 Voltage-controlled magnetic device operating over a wide temperature range |
| 01/29/2015 | US20150029807 Memory device and method for putting a memory cell into a state with a reduced leakage current consumption |
| 01/29/2015 | US20150029794 Differential current sensing scheme for magnetic random access memory |
| 01/29/2015 | US20150029786 Self-referenced sense amplifier for spin torque mram |
| 01/29/2015 | US20150029785 Methods for operating a finfet sram array |
| 01/29/2015 | US20150029784 Semiconductor integrated circuit device |
| 01/29/2015 | US20150029783 Method of detecting transistors mismatch in a sram cell |
| 01/29/2015 | US20150029782 Wide range multiport bitcell |
| 01/29/2015 | US20150029781 Method and apparatus for sensing in a memory |
| 01/29/2015 | US20150029777 Circuit and System of Using Junction Diode of MOS as Program Selector for Programmable Resistive Devices |
| 01/29/2015 | US20150028954 Signal receiver |
| 01/29/2015 | DE102013012234A1 Speichervorrichtung und Verfahren zum Versetzen einer Speicherzelle in einen Zustand mit einer reduzierten Leckstromaufnahme Memory device and method for placing a memory cell to a state with a reduced leakage current consumption |
| 01/29/2015 | DE102009005501B4 Leistungsabhängiger Speicherzugriff Performance-based memory access |
| 01/28/2015 | EP2828858A1 Memory cells, semiconductor device structures, systems including such cells, and methods of fabrication |
| 01/28/2015 | CN204130188U 用于减小电路的泄漏功率的装置、处理器和系统 Means for reducing leakage power circuit, the processor and the system |
| 01/28/2015 | CN104321872A 用于浮体单元的互补fet注入 Complementary fet injection unit for floating body |
| 01/28/2015 | CN104321821A 用于dram中的功率降低的配置 The power reduction for dram configuration |
| 01/28/2015 | CN104321820A 具备双稳态电路和非易失性元件的存储电路 Bistable circuit includes a memory circuit and a nonvolatile element |
| 01/28/2015 | CN104321819A 存储器单元、半导体装置结构、包括此类单元的系统及制造方法 A memory unit, a semiconductor device structure, includes a system and method for producing such a unit |
| 01/28/2015 | CN104321817A 具有改进的写余量的存储器单元 Memory cell having improved write margin |
| 01/28/2015 | CN104320121A 一种延迟时间稳定的时钟树驱动电路 A method of delaying the time stable clock tree driving circuit |