Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
08/1999
08/24/1999US5943285 Semiconductor memory device
08/24/1999US5943284 Semiconductor memory device
08/24/1999US5943281 Semiconductor integrated circuit reducing undesired current
08/24/1999US5943280 Semiconductor memory device which can be tested while selecting word lines successively at high speed
08/24/1999US5943279 Semiconductor memory integrated circuit
08/24/1999US5943278 SRAM with fast write capability
08/24/1999US5943276 Circuit and method for testing a memory device with a cell plate generator having a variable current
08/24/1999US5943275 Redundancy system
08/24/1999US5943273 Semiconductor memory device
08/24/1999US5943272 Circuit for sensing memory having a plurality of threshold voltages
08/24/1999US5943271 Semiconductor integrated circuit device
08/24/1999US5943270 Two-transistor DRAM cell for logic process technology
08/24/1999US5943260 Method for high-speed programming of a nonvolatile semiconductor memory device
08/24/1999US5943259 Data sensing device and method for multibit memory cell
08/24/1999US5943258 Integrated circuit
08/24/1999US5943257 Ferroelectric memory device and data protection method thereof
08/24/1999US5943256 Nonvolatile ferroelectric memory
08/24/1999US5943253 Semiconductor memory device with efficient layout
08/24/1999US5942933 Internal voltage generation circuit for semiconductor device
08/24/1999US5942912 Devices for the self-adjusting setting of the operating point in amplifier circuits with neuron MOS transistors
08/24/1999US5942776 Shallow junction ferroelectric memory cell and method of making the same
08/24/1999US5942765 High-temperature superconducting random access memory
08/24/1999US5942764 Semiconductor memory device and method of reading data in semiconductor memory device
08/24/1999US5942004 Device and a method for storing data and corresponding error-correction information
08/19/1999WO1999041751A1 Memory device and method
08/19/1999DE19833956A1 Semiconductor circuit for DRAM, SRAM, etc.
08/18/1999EP0936624A2 Magnetoresistive memory devices
08/18/1999EP0936623A2 Magnetic tunnel junction devices
08/18/1999EP0936622A2 Magnetic memory devices having multiple magnetic tunnel junctions therein
08/18/1999EP0936619A2 Signal delay device for use in semiconductor storage device for improved burst mode operation
08/18/1999EP0935802A1 Staggered row line firing in a single ras cycle
08/17/1999US5940852 Memory cells configurable as CAM or RAM in programmable logic devices
08/17/1999US5940851 Method and apparatus for DRAM refresh using master, slave and self-refresh modes
08/17/1999US5940704 Method of manufacturing a reference apparatus
08/17/1999US5940608 In an integrated circuit
08/17/1999US5940606 Duty cycle controller for clock signal to synchronous SRAM on FPGA
08/17/1999US5940344 Synchronous semiconductor memory device including internal clock signal generation circuit that generates an internal clock signal synchronizing in phase with external clock signal at high precision
08/17/1999US5940343 Memory sub-word line driver operated by unboosted voltage
08/17/1999US5940342 Multi-bank DRAM suitable for integration with processor on common semiconductor chip
08/17/1999US5940341 Semiconductor memory device
08/17/1999US5940340 Method and apparatus for writing to memory components
08/17/1999US5940339 Circuit and method for a memory device with p-channel isolation gates
08/17/1999US5940338 Memory device with a sense amplifier
08/17/1999US5940336 Reference clock generating circuit in memory to be asynchronously precharged and activated
08/17/1999US5940334 Memory interface circuit including bypass data forwarding with essentially no delay
08/17/1999US5940331 Output circuit of semiconductor memory device
08/17/1999US5940330 Synchronous memory device having a plurality of clock input buffers
08/17/1999US5940328 Synchronous semiconductor device with memory chips in a module for controlling output of strobe signal for trigger in reading data
08/17/1999US5940319 For controlling operations of the magnetic memory cell
08/17/1999US5940318 Antiradiation static memory cell
08/17/1999US5940317 Static memory cell
08/17/1999US5940316 Ferroelectric memory device using a ferroelectric material and method of reading data from the ferroelectric memory device
08/17/1999US5939932 High-output voltage generating circuit for channel breakdown prevention
08/17/1999US5939921 Drive circuit for a field-effect-controlled semiconductor component which opens a switch when a predetermined current is exceeded
08/17/1999US5939919 Clock signal distribution method for reducing active power dissipation
08/17/1999US5939913 DLL circuit and semiconductor memory device using same
08/17/1999US5939762 SRAM cell using thin gate oxide pulldown transistors
08/12/1999WO1999040541A1 A storage apparatus and writing and/or reading methods for use in hierarchical coding
08/12/1999DE19860516A1 Semiconductor memory with redundant memory cell matrix
08/12/1999DE19823701A1 Equalization pulse width control circuit for data transmission system
08/11/1999EP0935255A2 Flash EEPROM system
08/11/1999EP0935253A2 Write driver and bit line precharge apparatus and method
08/11/1999EP0677189A4 Architecture of output switching circuitry for frame buffer.
08/11/1999EP0568620B1 Cascading analog record/playback devices
08/11/1999CN1225512A Charge transfer device having three pixel rows arranged adjacently to each other
08/11/1999CN1225492A High speed semiconductor memory device
08/10/1999US5937295 Nano-structure memory device
08/10/1999US5936975 Semiconductor memory device with switching circuit for controlling internal addresses in parallel test
08/10/1999US5936971 Multi-state flash EEprom system with cache memory
08/10/1999US5936912 Electronic device and semiconductor memory device using the same
08/10/1999US5936911 Static type semiconductor memory device with timer circuit
08/10/1999US5936910 Semiconductor memory device having burn-in test function
08/10/1999US5936909 Static random access memory
08/10/1999US5936906 Multilevel sense device for a flash memory
08/10/1999US5936905 Self adjusting delay circuit and method for compensating sense amplifier clock timing
08/10/1999US5936904 Device and process for reading/rewriting a dynamic random access memory cell
08/10/1999US5936897 Semiconductor storage device capable of fast writing operation
08/10/1999US5936896 High speed and low power signal line driver and semiconductor memory device using the same
08/10/1999US5936895 Memory device tracking circuit
08/10/1999US5936894 Dual level wordline clamp for reduced memory cell current
08/10/1999US5936892 Memory cell DC characterization apparatus and method
08/10/1999US5936889 Array of nonvolatile memory device and method for fabricating the same
08/10/1999US5936887 Non-volatile memory device with NAND type cell structure
08/10/1999US5936884 Multiple writes per a single erase for a nonvolatile memory
08/10/1999US5936882 Magnetoresistive random access memory device and method of manufacture
08/10/1999US5936881 Semiconductor memory device
08/10/1999US5936879 Programmable logic arrays
08/10/1999US5936875 Integrated circuit memory devices including overlapping power lines and bit lines
08/10/1999US5936874 High density semiconductor memory and method of making
08/10/1999US5936832 Semiconductor memory device and method of operation thereof
08/10/1999US5936459 Internal potential generating circuit and boosted potential generating unit using pumping operation
08/10/1999US5936455 MOS integrated circuit with low power consumption
08/10/1999US5936432 High speed low power amplifier circuit
08/10/1999US5936431 Input signal variation detection circuit
08/10/1999US5936293 Hard/soft magnetic tunnel junction device with stable hard ferromagnetic layer
08/10/1999US5936274 High density flash memory
08/10/1999US5936265 Semiconductor device including a tunnel effect element
08/10/1999US5935257 Skew-reduction circuit and semiconductor device
08/10/1999CA2003377C Epm having an improvement in non-volatile storage of accounting data
08/05/1999WO1999021022A9 Method for detecting a current of spin polarized electrons in a solid body