G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor

Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
12/2006
12/26/2006	US7154768 Non-destructive readout of ferroelectric memories
12/26/2006	US7154767 Method for manufacture of semiconductor device
12/26/2006	US7154766 Ferroelectric memory
12/26/2006	US7154350 Semiconductor device
12/26/2006	US7154322 Delay signal generator circuit and memory system including the same
12/26/2006	US7154312 Apparatus for generating internal clock signal
12/26/2006	US7154311 Delay locked loop in semiconductor memory device and locking method thereof
12/26/2006	US7154153 Memory device
12/26/2006	US7154138 Transistor-arrangement, method for operating a transistor arrangement as a data storage element and method for producing a transistor-arrangement
12/26/2006	US7153726 Semiconductor device with magnetically permeable heat sink
12/26/2006	US7153721 Resistance variable memory elements based on polarized silver-selenide network growth
12/26/2006	US7152960 Micro-electromechanical valve having transformable valve actuator
12/26/2006	US7152949 Wide-format print engine with a pagewidth ink reservoir assembly
12/21/2006	WO2006135246A1 A method in the fabrication of a ferroelectric memory device
12/21/2006	WO2006134308A2 Integrated circuit protected against short circuits and operating errors following the passage on an ionizing radiation
12/21/2006	WO2005109438A3 Non-volatile memory dynamic operations
12/21/2006	US20060285413 Semiconductor memory
12/21/2006	US20060285408 Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells
12/21/2006	US20060285405 Semiconductor memory and operation method for same
12/21/2006	US20060285402 Apparatus and methods for multi-level sensing in a memory array
12/21/2006	US20060285397 Storage device
12/21/2006	US20060285392 Selective slow programming convergence in a flash memory device
12/21/2006	US20060285391 Compensation currents in non-volatile memory read operations
12/21/2006	US20060285390 Bitline exclusion in verification operation
12/21/2006	US20060285384 Non-volatile memory array with simultaneous write and erase feature
12/21/2006	US20060285383 Non-volatile magnetic memory device
12/21/2006	US20060285382 Hard disk device having normal and low density memory regions
12/21/2006	US20060285381 Sensing of resistance variable memory devices
12/21/2006	US20060285380 Phase change random access memory (PRAM) device
12/21/2006	US20060285379 Memory device with programmable parameter contoller
12/21/2006	US20060285378 Semiconductor memory device
12/21/2006	US20060284927 Inkjet printhead with common chamber and actuator material
12/21/2006	US20060284296 Semiconductor device
12/21/2006	US20060284246 Memory utilizing oxide nanolaminates
12/21/2006	DE102005005301B4 Integrierter Halbleiterspeicher Integrated semiconductor memory
12/21/2006	DE10052326B4 Nichtflüchtiges Halbleiterspeicherbauelement und Programmierverfahren hierfür A non-volatile semiconductor memory device and programming method therefor
12/20/2006	EP1734535A1 Semiconductor memory
12/20/2006	EP1733398A2 Circuit for accessing a chalcogenide memory array
12/20/2006	EP1733397A2 Anti-infectious hydrogel compositions
12/20/2006	EP1685571A4 A method circuit and system for determining a reference voltage
12/20/2006	EP1218887B1 Method and apparatus for supplying regulated power to memory device components
12/20/2006	CN1883009A Non-volatile memory and method with bit line coupled compensation
12/20/2006	CN1883007A Current confined pass layer for magnetic elements utilizing spin-transfer and an MRAM device using such magnetic elements
12/20/2006	CN1881641A Manufacturing methods for thin film fuse phase change ram
12/20/2006	CN1881473A Method of controlling copy-back operation of flash memory device including multi-level cells
12/20/2006	CN1881469A Reading phase change memories without triggering reset cell threshode devices
12/20/2006	CN1881468A Memory device for retaining data during power-down mode and method of operating the same
12/20/2006	CN1881467A 半导体存储器 Semiconductor memory
12/20/2006	CN1881466A Storage device and semiconductor apparatus
12/20/2006	CN1291553C Logical operation circuit and logical operation device and method
12/20/2006	CN1291552C Logical operation circuit and logical operation device and method
12/20/2006	CN1291498C Stacked gate flash memory array
12/20/2006	CN1291442C Panel for cathode ray tube
12/20/2006	CN1291417C Method and appts. for crossing clock domain boundaries
12/20/2006	CN1291416C Synchronized write data on high speed memory bus
12/20/2006	CN1291415C Semiconductor memory
12/19/2006	US7152150 DRAM having SRAM equivalent interface
12/19/2006	US7151713 Semiconductor memory device
12/19/2006	US7151710 Semiconductor memory device with data input/output organization in multiples of nine bits
12/19/2006	US7151707 Memory device and method having data path with multiple prefetch I/O configurations
12/19/2006	US7151706 CMIS semiconductor nonvolatile storage circuit
12/19/2006	US7151703 Semiconductor memory device including global IO line with low-amplitude driving voltage signal applied thereto
12/19/2006	US7151702 High voltage generators having an integrated discharge path for use in non-volatile semiconductor memory devices
12/19/2006	US7151699 Semiconductor memory device
12/19/2006	US7151698 Integrated charge sensing scheme for resistive memories
12/19/2006	US7151697 Non-volatile semiconductor memory
12/19/2006	US7151696 Integrated circuit memory devices having hierarchical bit line selection circuits therein
12/19/2006	US7151695 Integrated circuit having a non-volatile memory with discharge rate control and method therefor
12/19/2006	US7151694 Integrated circuit memory with fast page mode verify
12/19/2006	US7151693 Method of writing data to a non-volatile semiconductor memory
12/19/2006	US7151692 Operation scheme for programming charge trapping non-volatile memory
12/19/2006	US7151691 Magnetic random access memory
12/19/2006	US7151690 6F2 3-Transistor DRAM gain cell
12/19/2006	US7151689 Adjusting the frequency of an oscillator for use in a resistive sense amp
12/19/2006	US7151688 Sensing of resistance variable memory devices
12/19/2006	US7151687 Ferroelectric memory device, electronic apparatus and driving method
12/19/2006	US7151652 Top-pinned magnetoresistive device having adjusted interface property
12/19/2006	US7151395 Data retaining circuit
12/19/2006	US7151304 Method to reduce switch threshold of soft magnetic films
12/19/2006	US7151273 Silver-selenide/chalcogenide glass stack for resistance variable memory
12/19/2006	US7151029 Memory device and method of making the same
12/19/2006	CA2246763C Improved redundancy selection circuit for semiconductor memories
12/14/2006	WO2006133419A1 Method of programming a memory device with different levels of current
12/14/2006	WO2006133342A2 Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein
12/14/2006	WO2006132560A1 Dynamic sequential functional device
12/14/2006	WO2006131964A1 Semiconductor storage apparatus and electronic device
12/14/2006	WO2006097917A3 Method of achieving wear leveling in flash memory using relative grades
12/14/2006	WO2005093588A3 Interface for a block addressable mass storage system
12/14/2006	US20060282608 Memory system
12/14/2006	US20060282582 Memory system
12/14/2006	US20060282581 Memory system
12/14/2006	US20060281236 Method and apparatus for improving stability of a 6T CMOS SRAM cell
12/14/2006	US20060281218 Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method
12/14/2006	US20060280011 Bias sensing in DRAM sense amplifiers
12/14/2006	US20060280010 Storage device
12/14/2006	US20060280001 Semiconductor memory device
12/14/2006	US20060279997 Method of refreshing a charge-trapping nonvolatile memory using band-to-band tunneling hot hole (BTBTHH) injection
12/14/2006	US20060279995 Nonvolatile memory
12/14/2006	US20060279986 Semiconductor device and programming method therefor
12/14/2006	US20060279985 Purge-based floating body memory

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