Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
03/2007
03/15/2007US20070058421 Global Bit Line Restore Timing Scheme and Circuit
03/15/2007US20070058420 Power supply voltage control circuit
03/15/2007US20070058419 Memory cell having p-type pass device
03/15/2007US20070058418 Semiconductor memory device having memory cells requiring no refresh operation
03/15/2007US20070058417 Method for writing data into a memory cell of a conductive bridging random access memory, memory circuit and CBRAM memory circuit
03/15/2007US20070058416 Inspection method for semiconductor memory
03/15/2007US20070058415 Method for depositing ferroelectric thin films using a mixed oxidant gas
03/15/2007US20070058414 Semiconductor memory device having error checking and correcting circuit
03/15/2007US20070058413 Active float for the dummy bit lines in FeRAM
03/15/2007US20070058244 Oblique mirror-type normal-incidence collector system for light sources, particularly euv plasma discharge sources
03/15/2007DE19807012B4 Arrayförmige nichtflüchtige Speichereinrichtung und Verfahren zu ihrer Herstellung Array-shaped non-volatile storage device and process for their preparation
03/15/2007DE102006037723A1 Bitleitungsabtastverstärker und zugehöriges Verstärkungsverfahren Bitline sense amplifier and associated amplification method
03/15/2007DE102006036602A1 Halbleiterspeichervorrichtungen mit einer Offen-Bitleitung-Architektur sowie Verfahren zum Steuern der Bitleitungen solcher Halbleiterspeichervorrichtungen Semiconductor memory devices having an open bit line architecture and to methods for controlling the bit lines of such semiconductor memory devices,
03/15/2007DE102006035122A1 Aufrechterhalten interner Spannungen einer integrierten Schaltung ansprechend auf einen getakteten Standby-Modus Maintaining internal voltages of an integrated circuit in response to a clocked standby mode
03/15/2007DE102006033190A1 DRAM und Verfahren für eine PASR-Operation für einen DRAM DRAM and procedures for PASR-operation for a DRAM
03/15/2007DE102006032243A1 Deaktivieren eines getakteten Standby-Modus basierend auf einer Vorrichtungstemperatur Disabling a clocked standby mode based on a device temperature
03/15/2007DE102006029698A1 Synchroner Signalgenerator Synchronous signal generator
03/15/2007DE102006012772A1 Halbleiterspeicherbauelement mit dielektrischer Struktur und Verfahren zur Herstellung desselben The same semiconductor memory device having a dielectric structure and methods for preparing
03/15/2007DE102004020576B4 Datenverarbeitungsvorrichtung mit schaltbarer Ladungsneutralität und Verfahren zum Betreiben einer Dual-Rail-Schaltungskomponente A data processing apparatus with switchable charge neutrality and method for operating a dual-rail circuit component
03/15/2007DE10005460B4 Mehrwert-Masken-Nurlesespeicher Value-mask read-only memory
03/15/2007CA2621505A1 3-dimensional multi-layered modular computer architecture
03/14/2007EP1761387A1 System for aligning a charge tunnel of an ink jet printer
03/14/2007EP1671357A4 Circuit and method for controlling a clock synchronizing circuit for low power refresh operation
03/14/2007EP1642299A4 Sram cell structure and circuits
03/14/2007EP1629535B1 Planar polymer memory device
03/14/2007EP1451825B1 A matrix-addressable array of integrated transistor/memory structures
03/14/2007CN1930633A Charge packet metering for coarse/fine programming of non-volatile memory
03/14/2007CN1930632A Efficient verification for coarse/fine programming of non-volatile memory
03/14/2007CN1930631A Variable current sinking for coarse/fine programming of non-volatile memory
03/14/2007CN1930630A Improved magnetic switching
03/14/2007CN1930629A Printed magnetic ROM-MPROM
03/14/2007CN1930628A Separate write and read access architecture for a magnetic tunnel junction
03/14/2007CN1929049A Method for changing magnetism of ferromagnet CrO2 film using laser induction effect
03/14/2007CN1929033A 半导体器件 Semiconductor devices
03/14/2007CN1929028A Nonvolatile semiconductor memory device having uniform operational characteristics for memory cells
03/14/2007CN1929027A Semiconductor memory device, semiconductor integrated circuit system using the same, and control method of semiconductor memory device
03/14/2007CN1929026A Micro-tile memory interfaces
03/14/2007CN1928919A Automatic detection of micro-tile enabled memory
03/14/2007CN1305140C Magnetic RAM and its data reading method
03/14/2007CN1305139C Strong dielectric memory
03/14/2007CN1305074C Random access memory device and driving method for the same
03/13/2007US7191379 Magnetic memory with error correction coding
03/13/2007US7191339 System and method for using a PLD identification code
03/13/2007US7190627 Semiconductor device
03/13/2007US7190624 Flash memory device capable of preventing an over-erase of flash memory cells and erase method thereof
03/13/2007US7190623 Non-volatile memory cell and method of operating the same
03/13/2007US7190621 Sensing scheme for a non-volatile semiconductor memory cell
03/13/2007US7190618 Semiconductor device for reducing coupling noise
03/13/2007US7190617 Flash EEprom system
03/13/2007US7190616 In-service reconfigurable DRAM and flash memory device
03/13/2007US7190615 Semiconductor device
03/13/2007US7190614 Operation scheme for programming charge trapping non-volatile memory
03/13/2007US7190613 Magnetic random access memory device having thermal agitation property and high write efficiency
03/13/2007US7190612 Circuitry for use in current switching a magnetic cell
03/13/2007US7190611 Spin-transfer multilayer stack containing magnetic layers with resettable magnetization
03/13/2007US7190610 Latch-up prevention for memory cells
03/13/2007US7190609 Semiconductor memory device with memory cells operated by boosted voltage
03/13/2007US7190608 Sensing of resistance variable memory devices
03/13/2007US7190607 Phase-change memory element driver circuits using measurement to control current and methods of controlling drive current of phase-change memory elements using measurement
03/13/2007US7190606 Test mode control device using nonvolatile ferroelectric memory
03/13/2007US7190604 Capacity dividable memory IC
03/13/2007US7190602 Integrated circuit incorporating three-dimensional memory array with dual opposing decoder arrangement
03/13/2007US7190537 Self-raid system using hard disk drive having backup head and method of writing data to and reading data from hard disk drive having backup head
03/13/2007US7190339 Ferroelectric memory device and display drive IC
03/13/2007US7190200 Delay locked loop capable of performing reliable locking operation
03/13/2007US7190031 Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device
03/13/2007US7190018 Bi-directional read/program non-volatile floating gate memory cell with independent controllable control gates, and array thereof, and method of formation
03/13/2007US7189988 Molecular electronics arrangement and method for producing a molecular electronics arrangement
03/13/2007US7189583 Method for production of MRAM elements
03/08/2007WO2006048860A3 Drift compensation in a flash memory
03/08/2007US20070055818 Method and system for using dynamic random access memory as cache memory
03/08/2007US20070055815 Storage system using electromagnetic array
03/08/2007US20070053223 Non-Volatile Memory Devices Having L-Shaped Floating Gate Electrodes and Methods of Forming Same
03/08/2007US20070053221 Phase change memory array having equalized resistance
03/08/2007US20070053220 Ferroelectric memory device
03/08/2007US20070052028 Semiconductor memory device including an SOI substrate
03/08/2007DE19947117B4 Ferroelektrischer Transistor und dessen Verwendung in einer Speicherzellenanordnung Ferroelectric transistor and its use in a memory cell arrangement
03/08/2007DE19807739B4 Kombinierter Integrierter Speicher- und Logikschaltkreis und Testverfahren hierfür Combined Integrated memory and logic circuit and test method therefor
03/08/2007DE112005000866T5 Verfahren und Systeme zur Erreichung einer hohen Schreibleistung in Multibit-Speichervorrichtungen Methods and systems for achieving a high write power in multi-bit memory devices
03/08/2007DE102005042089A1 System for storing and reading information, has data storing medium linked with reading unit such that storage electrode, dielectric and evaluation electrode form condenser
03/07/2007EP1760797A1 Electrically programmable memory element with improved contacts
03/07/2007EP1759393A1 Concurrent programming of non-volatile memory
03/07/2007EP1647030A4 Asynchronous static random access memory
03/07/2007EP1332498B1 An analog functional module using magnetoresistive memory technology
03/07/2007CN1926637A 编程非易失性存储器 Programming non-volatile memory
03/07/2007CN1926635A Method of reading NAND memory to compensate for coupling between storage elements
03/07/2007CN1926634A 半导体存储器 Semiconductor memory
03/07/2007CN1926633A Semiconductor memory and method for operating same
03/07/2007CN1925058A 半导体装置 Semiconductor device
03/07/2007CN1925057A Semiconductor memory system, chip, and method of masking write data in a chip
03/07/2007CN1303692C Semiconductor memory device, method for fabricating the same, and method for driving the same
03/07/2007CN1303669C Power supply path structure for integrated circuit design
03/07/2007CN1303661C Precharge apparatus in semiconductor memory device and precharge method using the same
03/07/2007CN1303613C Semiconductor memory for reducing current loss when keeping data mode
03/07/2007CN1303612C Selective memory refreshing circuit and method
03/07/2007CN1303611C Thin film magnetic memory device suppressing internal magnetic noises
03/07/2007CN1303610C Method and appts. for synchronzation of row and column access operation
03/06/2007US7187615 Methods of selectively activating word line segments enabled by row addresses and semiconductor memory devices having partial activation commands of word line
03/06/2007US7187607 Semiconductor memory device and method for manufacturing same
03/06/2007US7187604 Semiconductor memory