Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008) |
---|
03/15/2007 | US20070058421 Global Bit Line Restore Timing Scheme and Circuit |
03/15/2007 | US20070058420 Power supply voltage control circuit |
03/15/2007 | US20070058419 Memory cell having p-type pass device |
03/15/2007 | US20070058418 Semiconductor memory device having memory cells requiring no refresh operation |
03/15/2007 | US20070058417 Method for writing data into a memory cell of a conductive bridging random access memory, memory circuit and CBRAM memory circuit |
03/15/2007 | US20070058416 Inspection method for semiconductor memory |
03/15/2007 | US20070058415 Method for depositing ferroelectric thin films using a mixed oxidant gas |
03/15/2007 | US20070058414 Semiconductor memory device having error checking and correcting circuit |
03/15/2007 | US20070058413 Active float for the dummy bit lines in FeRAM |
03/15/2007 | US20070058244 Oblique mirror-type normal-incidence collector system for light sources, particularly euv plasma discharge sources |
03/15/2007 | DE19807012B4 Arrayförmige nichtflüchtige Speichereinrichtung und Verfahren zu ihrer Herstellung Array-shaped non-volatile storage device and process for their preparation |
03/15/2007 | DE102006037723A1 Bitleitungsabtastverstärker und zugehöriges Verstärkungsverfahren Bitline sense amplifier and associated amplification method |
03/15/2007 | DE102006036602A1 Halbleiterspeichervorrichtungen mit einer Offen-Bitleitung-Architektur sowie Verfahren zum Steuern der Bitleitungen solcher Halbleiterspeichervorrichtungen Semiconductor memory devices having an open bit line architecture and to methods for controlling the bit lines of such semiconductor memory devices, |
03/15/2007 | DE102006035122A1 Aufrechterhalten interner Spannungen einer integrierten Schaltung ansprechend auf einen getakteten Standby-Modus Maintaining internal voltages of an integrated circuit in response to a clocked standby mode |
03/15/2007 | DE102006033190A1 DRAM und Verfahren für eine PASR-Operation für einen DRAM DRAM and procedures for PASR-operation for a DRAM |
03/15/2007 | DE102006032243A1 Deaktivieren eines getakteten Standby-Modus basierend auf einer Vorrichtungstemperatur Disabling a clocked standby mode based on a device temperature |
03/15/2007 | DE102006029698A1 Synchroner Signalgenerator Synchronous signal generator |
03/15/2007 | DE102006012772A1 Halbleiterspeicherbauelement mit dielektrischer Struktur und Verfahren zur Herstellung desselben The same semiconductor memory device having a dielectric structure and methods for preparing |
03/15/2007 | DE102004020576B4 Datenverarbeitungsvorrichtung mit schaltbarer Ladungsneutralität und Verfahren zum Betreiben einer Dual-Rail-Schaltungskomponente A data processing apparatus with switchable charge neutrality and method for operating a dual-rail circuit component |
03/15/2007 | DE10005460B4 Mehrwert-Masken-Nurlesespeicher Value-mask read-only memory |
03/15/2007 | CA2621505A1 3-dimensional multi-layered modular computer architecture |
03/14/2007 | EP1761387A1 System for aligning a charge tunnel of an ink jet printer |
03/14/2007 | EP1671357A4 Circuit and method for controlling a clock synchronizing circuit for low power refresh operation |
03/14/2007 | EP1642299A4 Sram cell structure and circuits |
03/14/2007 | EP1629535B1 Planar polymer memory device |
03/14/2007 | EP1451825B1 A matrix-addressable array of integrated transistor/memory structures |
03/14/2007 | CN1930633A Charge packet metering for coarse/fine programming of non-volatile memory |
03/14/2007 | CN1930632A Efficient verification for coarse/fine programming of non-volatile memory |
03/14/2007 | CN1930631A Variable current sinking for coarse/fine programming of non-volatile memory |
03/14/2007 | CN1930630A Improved magnetic switching |
03/14/2007 | CN1930629A Printed magnetic ROM-MPROM |
03/14/2007 | CN1930628A Separate write and read access architecture for a magnetic tunnel junction |
03/14/2007 | CN1929049A Method for changing magnetism of ferromagnet CrO2 film using laser induction effect |
03/14/2007 | CN1929033A 半导体器件 Semiconductor devices |
03/14/2007 | CN1929028A Nonvolatile semiconductor memory device having uniform operational characteristics for memory cells |
03/14/2007 | CN1929027A Semiconductor memory device, semiconductor integrated circuit system using the same, and control method of semiconductor memory device |
03/14/2007 | CN1929026A Micro-tile memory interfaces |
03/14/2007 | CN1928919A Automatic detection of micro-tile enabled memory |
03/14/2007 | CN1305140C Magnetic RAM and its data reading method |
03/14/2007 | CN1305139C Strong dielectric memory |
03/14/2007 | CN1305074C Random access memory device and driving method for the same |
03/13/2007 | US7191379 Magnetic memory with error correction coding |
03/13/2007 | US7191339 System and method for using a PLD identification code |
03/13/2007 | US7190627 Semiconductor device |
03/13/2007 | US7190624 Flash memory device capable of preventing an over-erase of flash memory cells and erase method thereof |
03/13/2007 | US7190623 Non-volatile memory cell and method of operating the same |
03/13/2007 | US7190621 Sensing scheme for a non-volatile semiconductor memory cell |
03/13/2007 | US7190618 Semiconductor device for reducing coupling noise |
03/13/2007 | US7190617 Flash EEprom system |
03/13/2007 | US7190616 In-service reconfigurable DRAM and flash memory device |
03/13/2007 | US7190615 Semiconductor device |
03/13/2007 | US7190614 Operation scheme for programming charge trapping non-volatile memory |
03/13/2007 | US7190613 Magnetic random access memory device having thermal agitation property and high write efficiency |
03/13/2007 | US7190612 Circuitry for use in current switching a magnetic cell |
03/13/2007 | US7190611 Spin-transfer multilayer stack containing magnetic layers with resettable magnetization |
03/13/2007 | US7190610 Latch-up prevention for memory cells |
03/13/2007 | US7190609 Semiconductor memory device with memory cells operated by boosted voltage |
03/13/2007 | US7190608 Sensing of resistance variable memory devices |
03/13/2007 | US7190607 Phase-change memory element driver circuits using measurement to control current and methods of controlling drive current of phase-change memory elements using measurement |
03/13/2007 | US7190606 Test mode control device using nonvolatile ferroelectric memory |
03/13/2007 | US7190604 Capacity dividable memory IC |
03/13/2007 | US7190602 Integrated circuit incorporating three-dimensional memory array with dual opposing decoder arrangement |
03/13/2007 | US7190537 Self-raid system using hard disk drive having backup head and method of writing data to and reading data from hard disk drive having backup head |
03/13/2007 | US7190339 Ferroelectric memory device and display drive IC |
03/13/2007 | US7190200 Delay locked loop capable of performing reliable locking operation |
03/13/2007 | US7190031 Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device |
03/13/2007 | US7190018 Bi-directional read/program non-volatile floating gate memory cell with independent controllable control gates, and array thereof, and method of formation |
03/13/2007 | US7189988 Molecular electronics arrangement and method for producing a molecular electronics arrangement |
03/13/2007 | US7189583 Method for production of MRAM elements |
03/08/2007 | WO2006048860A3 Drift compensation in a flash memory |
03/08/2007 | US20070055818 Method and system for using dynamic random access memory as cache memory |
03/08/2007 | US20070055815 Storage system using electromagnetic array |
03/08/2007 | US20070053223 Non-Volatile Memory Devices Having L-Shaped Floating Gate Electrodes and Methods of Forming Same |
03/08/2007 | US20070053221 Phase change memory array having equalized resistance |
03/08/2007 | US20070053220 Ferroelectric memory device |
03/08/2007 | US20070052028 Semiconductor memory device including an SOI substrate |
03/08/2007 | DE19947117B4 Ferroelektrischer Transistor und dessen Verwendung in einer Speicherzellenanordnung Ferroelectric transistor and its use in a memory cell arrangement |
03/08/2007 | DE19807739B4 Kombinierter Integrierter Speicher- und Logikschaltkreis und Testverfahren hierfür Combined Integrated memory and logic circuit and test method therefor |
03/08/2007 | DE112005000866T5 Verfahren und Systeme zur Erreichung einer hohen Schreibleistung in Multibit-Speichervorrichtungen Methods and systems for achieving a high write power in multi-bit memory devices |
03/08/2007 | DE102005042089A1 System for storing and reading information, has data storing medium linked with reading unit such that storage electrode, dielectric and evaluation electrode form condenser |
03/07/2007 | EP1760797A1 Electrically programmable memory element with improved contacts |
03/07/2007 | EP1759393A1 Concurrent programming of non-volatile memory |
03/07/2007 | EP1647030A4 Asynchronous static random access memory |
03/07/2007 | EP1332498B1 An analog functional module using magnetoresistive memory technology |
03/07/2007 | CN1926637A 编程非易失性存储器 Programming non-volatile memory |
03/07/2007 | CN1926635A Method of reading NAND memory to compensate for coupling between storage elements |
03/07/2007 | CN1926634A 半导体存储器 Semiconductor memory |
03/07/2007 | CN1926633A Semiconductor memory and method for operating same |
03/07/2007 | CN1925058A 半导体装置 Semiconductor device |
03/07/2007 | CN1925057A Semiconductor memory system, chip, and method of masking write data in a chip |
03/07/2007 | CN1303692C Semiconductor memory device, method for fabricating the same, and method for driving the same |
03/07/2007 | CN1303669C Power supply path structure for integrated circuit design |
03/07/2007 | CN1303661C Precharge apparatus in semiconductor memory device and precharge method using the same |
03/07/2007 | CN1303613C Semiconductor memory for reducing current loss when keeping data mode |
03/07/2007 | CN1303612C Selective memory refreshing circuit and method |
03/07/2007 | CN1303611C Thin film magnetic memory device suppressing internal magnetic noises |
03/07/2007 | CN1303610C Method and appts. for synchronzation of row and column access operation |
03/06/2007 | US7187615 Methods of selectively activating word line segments enabled by row addresses and semiconductor memory devices having partial activation commands of word line |
03/06/2007 | US7187607 Semiconductor memory device and method for manufacturing same |
03/06/2007 | US7187604 Semiconductor memory |