G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor

Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
01/2007
01/02/2007	CA2481583C Memory storage device with heating element
12/2006
12/28/2006	WO2006138413A1 Selective slow programming convergence in a flash memory device
12/28/2006	WO2006138040A1 Method of reading phase-change memory elements
12/28/2006	WO2006137993A2 Method and system for automated initiation of search queries from computer displayed content
12/28/2006	WO2006121491A3 Method and apparatus for low voltage write in a static random access memory
12/28/2006	WO2005104133A3 High density data storage
12/28/2006	US20060294322 Multi-port memory based on DRAM core
12/28/2006	US20060294296 Parity-scanning and refresh in dynamic memory devices
12/28/2006	US20060291300 High speed data access memory arrays
12/28/2006	US20060291297 Semiconductor memory
12/28/2006	US20060291294 Method for refreshing a flash memory
12/28/2006	US20060291293 Bias circuits and methods for enhanced reliability of flash memory device
12/28/2006	US20060291292 Non-volatile semiconductor memory and programming method
12/28/2006	US20060291291 Non-volatile semiconductor memory device
12/28/2006	US20060291290 Circuit and Method for Adaptive Incremental Step-Pulse Programming in a Flash Memory Device
12/28/2006	US20060291289 Non-volatile memory device having page buffer for verifying pre-erase
12/28/2006	US20060291287 Method for operating a non-volatile charge-trapping memory device and method for determining programming/erase conditions
12/28/2006	US20060291286 Methods of programming silicon oxide nitride oxide semiconductor (SONOS) memory devices
12/28/2006	US20060291283 Redundant memory content substitution apparatus and method
12/28/2006	US20060291282 Flash memory cell and methods for programming and erasing
12/28/2006	US20060291281 Non-volatile memory, manufacturing and operating method thereof
12/28/2006	US20060291280 Configuration finalization on first valid NAND command
12/28/2006	US20060291279 Semiconductor memory device
12/28/2006	US20060291278 Nano-Reflectors for Thin, Flat Display Devices
12/28/2006	US20060291277 Phase change random access memory (PRAM) device
12/28/2006	US20060291276 Magnetic memory with a magnetic tunnel junction written in a thermally assisted manner, and method for writing the same
12/28/2006	US20060291275 Magnetoresistive memory cell and process for producing the same
12/28/2006	US20060291274 Semiconductor integrated circuit
12/28/2006	US20060291273 Sram memory cell and associated read and write method
12/28/2006	US20060291272 Static random access memory cell using chalcogenide
12/28/2006	US20060291271 High density data storage devices having servo indicia formed in a patterned media
12/28/2006	US20060291270 Ferroelectric memory device and display-driving IC
12/28/2006	US20060291269 Image projector with flexible reflective analog modulator
12/28/2006	US20060290741 Inkjet printhead chip with a side-by-side nozzle arrangement layout
12/28/2006	US20060290395 Digital DLL device, digital DLL control method, and digital DLL control program
12/28/2006	US20060289908 Field effect device with a channel with a switchable conductivity
12/28/2006	DE19929172B4 Integrierter Speicher Built-in Memory
12/28/2006	DE102006023170A1 Ausbilden von Via-Kontakten in MRAM-Zellen Forming via contacts in MRAM cells
12/28/2006	DE102005025149A1 Einrichtung zur Verwendung beim Auslesen einer Speicherzelle, und Verfahren zum Auslesen einer Speicherzelle Means for use in reading a memory cell and method for reading a memory cell
12/28/2006	DE102005024944B3 Kontaktstruktur für einen Stack-DRAM-Speicherkondensator Contact structure for a stack-capacitor DRAM memory
12/28/2006	DE102004022425B4 Integrierte Schaltungsanordnung zur Stabilisierung einer Spannung An integrated circuit device for stabilizing a voltage
12/28/2006	DE102004012531B4 Rekonfigurierbare digitale Logikeinheit Reconfigurable digital logic unit
12/27/2006	EP1737055A1 Magnetoresistive element and its manufacturing method
12/27/2006	EP1736993A1 Magnetic random access memory array having bit/word lines for shared write select and read operations
12/27/2006	EP1735967A2 States encoding in multi-bit flash cells
12/27/2006	EP1611581A4 Methods and apparatus for selectively updating memory cell arrays
12/27/2006	EP1494864A4 Wide format pagewidth inkjet printer
12/27/2006	EP1494863A4 A print assembly for a wide format pagewidth printer
12/27/2006	EP1494862A4 Processing of images for high volume pagewidth printing
12/27/2006	EP1405240B1 Multi input memory device reader
12/27/2006	EP1114461B1 Semiconductor circuit
12/27/2006	CN1886804A Data retention indicator for magnetic memories
12/27/2006	CN1886801A Method and device for performing active field compensation during programming of a magnetoresistive memory device
12/27/2006	CN1886800A Non-homogeneous shielding of an MRAM chip with magnetic field sensor
12/27/2006	CN1886799A Method and device for preventing erroneous programming of a magnetoresistive memory element
12/27/2006	CN1886797A Memory device having multiple array structure for increased bandwidth
12/27/2006	CN1885436A Multiple level memory cell programming method
12/27/2006	CN1885435A EEPROM level transforming circuit and method employing deep sub-micron CMOS standard process to realize
12/27/2006	CN1885434A Block word line precharge circuit of flash memory device
12/27/2006	CN1885432A Phase change random access memory (pram) device
12/27/2006	CN1885431A Semiconductor memory device and control method for the semiconductor memory device
12/27/2006	CN1885430A Parallel data path architecture
12/27/2006	CN1885429A Method for adjusting programmable resistance to preset resistance value
12/27/2006	CN1885428A 铁电存储装置 Ferroelectric memory device
12/27/2006	CN1292484C Nonvolatile static RAM memory unit
12/27/2006	CN1292481C System combined semiconductor device
12/27/2006	CN1292480C Nonvolatile semiconductor storage device, its mfg. method and semiconductor integrated circuit and system
12/27/2006	CN1292440C Renewing control method for semiconductor memory and semiconductor memory
12/27/2006	CN1292439C Data access method of semiconductor memory and semiconductor memory
12/27/2006	CN1292438C Thin film magnet memory having magnetic tunnel junction
12/27/2006	CN1292326C Electricity saving controlling circuit in electronic equipment and method for saving electricity
12/26/2006	US7155627 Memory system and data transmission method
12/26/2006	US7155561 Method and system for using dynamic random access memory as cache memory
12/26/2006	US7155395 Preprinted print rolls for postal use in an image processing device
12/26/2006	US7154810 Synchronous controlled, self-timed local SRAM block
12/26/2006	US7154804 Semiconductor integrated circuit and IC card
12/26/2006	US7154802 Semiconductor memory device capable of operating at high speed and with low power consumption while ensuring reliability of memory cell
12/26/2006	US7154799 Semiconductor memory with single cell and twin cell refreshing
12/26/2006	US7154798 MRAM arrays and methods for writing and reading magnetic memory devices
12/26/2006	US7154797 Signal transmission system using PRD method, receiver circuit for use in the signal transmission system, and semiconductor memory device to which the signal transmission system is applied
12/26/2006	US7154796 Semiconductor memory device and data read and write method thereof
12/26/2006	US7154789 High-voltage generator circuit and semiconductor memory device including the same
12/26/2006	US7154788 Semiconductor integrated circuit device
12/26/2006	US7154787 Semiconductor memory and control method thereof allowing high degree of accuracy in verify operation
12/26/2006	US7154786 Semiconductor integrated circuit device
12/26/2006	US7154785 Charge pump circuitry having adjustable current outputs
12/26/2006	US7154784 Flash memory with reduced size and method for accessing the same
12/26/2006	US7154782 Contiguous block addressing scheme
12/26/2006	US7154781 Contiguous block addressing scheme
12/26/2006	US7154780 Contiguous block addressing scheme
12/26/2006	US7154778 Nanocrystal write once read only memory for archival storage
12/26/2006	US7154777 Memory device capable of stable data writing
12/26/2006	US7154776 Thin film magnetic memory device writing data with bidirectional current
12/26/2006	US7154775 Magnetic random access memory
12/26/2006	US7154774 Detecting switching of access elements of phase change memory cells
12/26/2006	US7154773 MRAM cell with domain wall switching and field select
12/26/2006	US7154772 MRAM architecture with electrically isolated read and write circuitry
12/26/2006	US7154771 Method of switching an MRAM cell comprising bidirectional current generation
12/26/2006	US7154770 Bitcell having a unity beta ratio
12/26/2006	US7154769 Memory device including barrier layer for improved switching speed and data retention

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