Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
06/2007
06/21/2007US20070140009 Virtual ground type nonvolatile semiconductor memory device
06/21/2007US20070140008 Independently programmable memory segments within an NMOS electrically erasable programmable read only memory array achieved by P-well separation and method therefor
06/21/2007US20070140006 Compensating for coupling in non-volatile storage
06/21/2007US20070140005 Multi-level dynamic memory device
06/21/2007US20070140003 Nonvolative semiconductor memory device and operating method thereof
06/21/2007US20070140002 Use of recovery transistors during write operations to prevent disturbance of unselected cells
06/21/2007US20070140001 Nonvolatile storage device and method of manufacturing the same, and storage device and method of manufacturing the same
06/21/2007US20070140000 Magnetic storage cell
06/21/2007US20070139999 Magnetic memory device
06/21/2007US20070139998 Radiation tolerant sram bit
06/21/2007US20070139997 Semiconductor memory
06/21/2007US20070139996 Semiconductor memory and method for controlling semiconductor memory
06/21/2007US20070139995 Semiconductor memory device
06/21/2007US20070139994 Multi-level dynamic memory device having open bit line structure and method of driving the same
06/21/2007US20070139993 Ferroelectric memory device, electronic apparatus, and ferroelectric memory device driving method
06/21/2007US20070139989 Tamper-resistant packaging and approach using magnetically-set data
06/21/2007US20070139474 Ink jet nozzle assembly with linearly constrained actuator
06/21/2007DE4332583B4 Schaltung zum Klemmen eines Freigabetaktsignales für eine Halbleiterspeichervorrichtung Circuit for clamping an enable clock signal for a semiconductor memory device
06/21/2007DE19723449B4 Verfahren zum Lesen und Schreiben von Dateninhalten eines dynamischen Halbleiterspeichers A method of reading and writing of data contents of a dynamic semiconductor memory
06/21/2007DE102006048971A1 Gezieltes automatisches Auffrischen für einen dynamischen Direktzugriffsspeicher Targeted automatic refreshing for a dynamic random access memory
06/21/2007DE10105627B4 Mehrfachanschlussspeichereinrichtung, Verfahren und System zum Betrieb einer Mehrfachanschlussspeichereinrichtung Multi-port memory device, method and system for operating a multi-port memory device
06/21/2007DE10054595B4 Nichtflüchtiger ferroelektrischer Speicher und Verfahren zu seiner Herstellung A non-volatile ferroelectric memory and method for its preparation
06/21/2007DE10046051B4 Nichtflüchtiger ferroelektrischer Speicher und Schaltung zum Betreiben desselben Of the same non-volatile ferroelectric memory and circuit for operating
06/20/2007EP1798732A1 Ferroelectric passive memory cell, device and method of manufacture thereof.
06/20/2007EP1798731A2 Signal transmission system using PRD method, receiver circuit for use in the signal transmission system, and semiconductor memory device to which the signal transmission system is applied
06/20/2007EP1797564A1 Read method and sensing device
06/20/2007EP1733398A4 Circuit for accessing a chalcogenide memory array
06/20/2007EP1547091B1 A method for operating a ferroelectric or electret memory device, and a device of this kind
06/20/2007CN1985330A 半导体存储器 Semiconductor memory
06/20/2007CN1983619A 数据读/写装置 Data read / write device
06/20/2007CN1983452A Multiport semiconductor memory device
06/20/2007CN1983446A Memory controller and its controlling method
06/20/2007CN1983445A Memory devices including floating body transistor capacitorless memory cells and related methods
06/20/2007CN1983444A 磁存储器 Magnetic memory
06/20/2007CN1983443A 存储装置和半导体装置 A storage device and a semiconductor device
06/20/2007CN1983441A 半导体集成电路设备 The semiconductor integrated circuit device
06/20/2007CN1322672C Non-volatile latch circuit and a driving method thereof
06/20/2007CN1322578C Self-aligned conductive line for cross-point magnetic memory integrated circuits
06/20/2007CN1322515C Method and system for dual bit memory erase verification
06/20/2007CN1322514C Improved semiconductor memory structure
06/20/2007CN1322513C Dynamic semiconductor memory and semiconductor IC device
06/20/2007CN1322512C Memory device and method for operation of the same
06/20/2007CN1322441C Multi-chip package type memory system
06/19/2007US7234087 External storage device and memory access control method thereof
06/19/2007US7233537 Thin film magnetic memory device provided with a dummy cell for data read reference
06/19/2007US7233531 SRAM cell with horizontal merged devices
06/19/2007US7233529 System for erasing nonvolatile memory
06/19/2007US7233527 Nonvolatile memory structure
06/19/2007US7233526 Semiconductor memory device with MOS transistors each having floating gate and control gate
06/19/2007US7233524 Sense amplifier circuit
06/19/2007US7233523 Optimized layout for multi-bit memory banks each with two data latches and two arithmetic circuits
06/19/2007US7233522 NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same
06/19/2007US7233521 Apparatus and method for storing analog information in EEPROM memory
06/19/2007US7233520 Process for erasing chalcogenide variable resistance memory bits
06/19/2007US7233519 Thin film magnetic memory device for conducting data write operation by application of a magnetic field
06/19/2007US7233518 Radiation-hardened SRAM cell with write error protection
06/19/2007US7233517 Atomic probes and media for high density data storage
06/19/2007US7233516 Semiconductor device and method for fabricating the same
06/19/2007US7233515 Integrated memory arrangement based on resistive memory cells and production method
06/19/2007US7233421 Data card reader
06/19/2007US7233180 Circuits and methods of temperature compensation for refresh oscillator
06/19/2007US7233172 Differential amplifier circuit capable of accurately amplifying even high-speeded signal of small amplitude
06/19/2007US7233039 Spin transfer magnetic elements with spin depolarization layers
06/19/2007US7233024 Three-dimensional memory device incorporating segmented bit line memory array
06/19/2007US7232696 Semiconductor integrated circuit and method for detecting soft defects in static memory cell
06/19/2007US7231844 Transmission control system
06/14/2007WO2007067832A2 Mram with a write driver and method therefor
06/14/2007WO2007067768A1 Single level cell programming in a multiple level cell non-volatile memory device
06/14/2007WO2007066407A1 Magnetic memory device and method of writing to the same
06/14/2007US20070136513 Multilevel storage nonvolatile semiconductor memory device enabling high-speed data reading and high-speed data writing
06/14/2007US20070133339 Data interface device for accessing memory
06/14/2007US20070133329 Integrated semiconductor memory with determination of a chip temperature
06/14/2007US20070133316 Semiconductor integrated circuit device
06/14/2007US20070133304 Method and apparatus for determining sensing timing of flash memory
06/14/2007US20070133303 Nonvolatile semiconductor memory
06/14/2007US20070133302 Electrically writable non-volatile memory
06/14/2007US20070133301 Low-voltage single-layer polysilicon eeprom memory cell
06/14/2007US20070133300 High voltage switching circuit
06/14/2007US20070133299 Non-volatile memory storage device and controller therefor
06/14/2007US20070133298 Time-dependent compensation currents in non-volatile memory read operations
06/14/2007US20070133297 Non-volatile memory read operations using compensation currents
06/14/2007US20070133296 Methods for operating a nonvolatile memory and related circuit
06/14/2007US20070133284 Flash EEprom System With Simultaneous Multiple Data Sector Programming and Storage of Physical Block Characteristics in Other Designated Blocks
06/14/2007US20070133274 Gated diode nonvolatile memory cell array
06/14/2007US20070133273 Gated diode nonvolatile memory cell
06/14/2007US20070133272 Phase change memory device having semiconductor laser unit
06/14/2007US20070133271 Phase-changeable memory device and read method thereof
06/14/2007US20070133270 Phase-change random access memory device and method of operating the same
06/14/2007US20070133269 Non-volatile memory devices and systems including phase-change one-time-programmable (OTP) memory cells and related methods
06/14/2007US20070133268 Phase change memory device and memory cell array thereof
06/14/2007US20070133267 Phase change memory device and method of programming the same
06/14/2007US20070133266 Memory devices using carbon nanotube (cnt) technologies
06/14/2007US20070133265 Semiconductor integrated circuit device with a plurality of memory cells storing data
06/14/2007US20070133264 Storage element and memory
06/14/2007US20070133263 Magnetic memory
06/14/2007US20070133262 MRAM with a write driver and method therefor
06/14/2007US20070133261 Semiconductor storage device
06/14/2007US20070133260 Semiconductor memory device with memory cells operated by boosted voltage
06/14/2007US20070133259 One-time programmable memory
06/14/2007US20070133258 Diode-based memory including floating-plate capacitor and its applications